MY147251A - Probe needle protection method for high current probe testing of power devices - Google Patents

Probe needle protection method for high current probe testing of power devices

Info

Publication number
MY147251A
MY147251A MYPI20084769A MYPI20084769A MY147251A MY 147251 A MY147251 A MY 147251A MY PI20084769 A MYPI20084769 A MY PI20084769A MY PI20084769 A MYPI20084769 A MY PI20084769A MY 147251 A MY147251 A MY 147251A
Authority
MY
Malaysia
Prior art keywords
current
probe
probes
high current
power devices
Prior art date
Application number
MYPI20084769A
Inventor
Rogers Gary
Clauter Steve
Schwartz Rodney
Ukai Taichi
Lambright Joe
Lohr Dave
Original Assignee
Integrated Technology Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Integrated Technology Corp filed Critical Integrated Technology Corp
Publication of MY147251A publication Critical patent/MY147251A/en

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/36—Overload-protection arrangements or circuits for electric measuring instruments
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/28—Testing of electronic circuits, e.g. by signal tracer
    • G01R31/2851—Testing of integrated circuits [IC]
    • G01R31/2886—Features relating to contacting the IC under test, e.g. probe heads; chucks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

28 PROBE NEEDLE PROTECTION METHOD FOR HIGH CURRENT PROBE TESTING OF POWER DEVICES ABSTRACT 5 A TEST SYSTEM, APPARATUS AND METHOD FOR APPLYING HIGH CURRENT TEST STIMULI TO A SEMICONDUCTOR DEVICE (4, 10, 20) IN WAFER OR CHIP FORM INCLUDES A PLURALITY OF PROBES (2) FOR ELECTRICALLY COUPLING TO RESPECTIVE CONTACT POINTS (3) ON THE SEMICONDUCTOR DEVICE, A PLURALITY OF CURRENT LIMITERS (5) ELECTRICALLY COUPLED TO RESPECTIVE ONES OF THE PLURALITY OF PROBES (2), AND A CURRENT SENSOR (6) ELECTRICALLY COUPLED TO THE PLURALITY OF PROBES. THE CURRENT LIMITERS (5) ARE 1 0 OPERATIVE TO LIMIT CURRENT FLOW PASSING THROUGH A RESPECTIVE PROBE (2), AND THE CURRENT SENSOR IS OPERATIVE TO PROVIDE A SIGNAL WHEN DETECTED CURRENT IN ANY CONTACT OF THE PLURALITY OF PROBES EXCEEDS A THRESHOLD LEVEL. 1 5
MYPI20084769A 2006-05-23 2007-05-23 Probe needle protection method for high current probe testing of power devices MY147251A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74798106P 2006-05-23 2006-05-23

Publications (1)

Publication Number Publication Date
MY147251A true MY147251A (en) 2012-11-14

Family

ID=38724104

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI20084769A MY147251A (en) 2006-05-23 2007-05-23 Probe needle protection method for high current probe testing of power devices

Country Status (3)

Country Link
JP (1) JP2009538428A (en)
MY (1) MY147251A (en)
WO (1) WO2007137284A2 (en)

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WO2012031362A1 (en) * 2010-09-07 2012-03-15 Corporation De L ' Ecole Polytechnique De Montreal Methods, apparatus and system to support large-scale micro- systems including embedded and distributed power supply, thermal regulation, multi-distributed-sensors and electrical signal propagation
JP5291157B2 (en) * 2011-08-01 2013-09-18 東京エレクトロン株式会社 Probe card for power devices
JP6092729B2 (en) * 2013-07-19 2017-03-08 新光電気工業株式会社 Probe card and manufacturing method thereof
US11041900B2 (en) * 2014-03-26 2021-06-22 Teradyne, Inc. Equi-resistant probe distribution for high-accuracy voltage measurements at the wafer level
US10698020B2 (en) 2014-03-26 2020-06-30 Teradyne, Inc. Current regulation for accurate and low-cost voltage measurements at the wafer level
JP6339834B2 (en) * 2014-03-27 2018-06-06 東京エレクトロン株式会社 Board inspection equipment
JP6351442B2 (en) * 2014-08-28 2018-07-04 ルネサスエレクトロニクス株式会社 Semiconductor test equipment
US10330703B2 (en) * 2017-04-04 2019-06-25 Formfactor Beaverton, Inc. Probe systems and methods including electric contact detection
US10684311B2 (en) * 2017-05-10 2020-06-16 Tektronix, Inc. High input impedance electro-optic sensor
KR102781502B1 (en) * 2019-05-28 2025-03-17 삼성전자주식회사 Test board and test system for semiconductor package
US11740278B2 (en) * 2019-08-02 2023-08-29 Infineon Technologies Ag Electronic test equipment apparatus and methods of operating thereof
CN110426622B (en) * 2019-08-15 2024-08-20 北京华峰测控技术股份有限公司 Voltage and current source test circuit and test method
CN111562481B (en) * 2020-05-25 2022-08-02 中国电子科技集团公司第十三研究所 Compound semiconductor chip-on-wafer test circuit based on powered probes
IT202000012556A1 (en) * 2020-05-27 2021-11-27 Crea Collaudi Elettr Automatizzati Srl SAFETY SYSTEM FOR NEEDLE PROBE CARD FOR HIGH VOLTAGE AND HIGH CURRENT TEST ON POWER SEMICONDUCTOR DEVICES AND RELATED TEST MACHINE.
CN116243095B (en) * 2023-05-10 2023-07-21 深圳弘远电气有限公司 Test circuit, test device and control method based on automatic program control
CN117214649B (en) * 2023-11-07 2024-07-02 珠海格力电子元器件有限公司 Power device testing device and method
CN118311306B (en) * 2024-06-07 2024-09-24 北京智芯微电子科技有限公司 Protection module, test device, test equipment and test method
KR102831061B1 (en) * 2024-12-02 2025-07-08 숭실대학교산학협력단 Mobile apparatus for detecting characteristics of electronic device and detection system including the same

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JPS60142526A (en) * 1983-12-29 1985-07-27 Toshiba Corp Measurement of electrical characteristics of semiconductor element
JPH0469715A (en) * 1990-07-10 1992-03-04 Mitsubishi Electric Corp Dc power unit
US5365180A (en) * 1993-04-16 1994-11-15 National Semiconductor Corporation Method for measuring contact resistance
JP2775222B2 (en) * 1993-09-14 1998-07-16 ソニー・テクトロニクス株式会社 Power control circuit
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JP2001053120A (en) * 1999-08-09 2001-02-23 Sharp Corp Semiconductor integrated circuit with overcurrent detection function and method of manufacturing the same
JP2002095157A (en) * 2000-07-10 2002-03-29 Matsushita Electric Ind Co Ltd Overcharge prevention circuit
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JP2004085247A (en) * 2002-08-23 2004-03-18 Mitsubishi Electric Corp Probe card
DE10308333A1 (en) * 2003-02-26 2004-09-16 Infineon Technologies Ag Burn-in system for semiconductor devices on wafer plane, has power supplies connected to input contacts of contacting device, and with signal contacts connected to measuring contacts
AT500263B1 (en) * 2004-03-15 2007-04-15 T I P S Messtechnik Gmbh METHOD AND CIRCUIT FOR THE PROTECTION OF TEST CONTACTS IN HIGH-CIRCULAR MEASUREMENT OF SEMICONDUCTOR COMPONENTS
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US7029932B1 (en) * 2005-02-07 2006-04-18 Texas Instruments Incorporated Circuit and method for measuring contact resistance

Also Published As

Publication number Publication date
WO2007137284A2 (en) 2007-11-29
WO2007137284A3 (en) 2008-03-27
JP2009538428A (en) 2009-11-05

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