MY149475A - Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics - Google Patents

Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

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Publication number
MY149475A
MY149475A MYPI20090622A MY149475A MY 149475 A MY149475 A MY 149475A MY PI20090622 A MYPI20090622 A MY PI20090622A MY 149475 A MY149475 A MY 149475A
Authority
MY
Malaysia
Prior art keywords
stretchable
semiconductors
nanomembranes
electronic circuits
stretchable electronics
Prior art date
Application number
Other languages
English (en)
Inventor
John A Rogers
Ralph G Nuzzo
Lee Keon Jae
Kang Jun Seong
Zhu Zhengtao
Menard Etienne
Ahn Jong-Hyun
Kim Hoon-Sik
Khang Dahl-Young
Meitl Matthew
Sun Yugang
Ko Heung Cho
Carlson Andrew
Choi Won Mook
Stoykovich Mark
Jiang Hanqing
Huang Yonggang
Original Assignee
Univ Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Illinois filed Critical Univ Illinois
Publication of MY149475A publication Critical patent/MY149475A/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01—Manufacture or treatment
    • H10W70/05—Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
    • B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
    • B81B3/0067—Mechanical properties
    • B81B3/0078—Constitution or structural means for improving mechanical properties not provided for in B81B3/007 - B81B3/0075
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/0277—Bendability or stretchability details
    • H05K1/0283—Stretchable printed circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/472—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having lower bandgap active layer formed on top of wider bandgap layer, e.g. inverted HEMT
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/117—Shapes of semiconductor bodies
    • H10D62/118—Nanostructure semiconductor bodies
    • H10D62/119—Nanowire, nanosheet or nanotube semiconductor bodies
    • H10D62/121—Nanowire, nanosheet or nanotube semiconductor bodies oriented parallel to substrates
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    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
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    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/881—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being a two-dimensional material
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
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    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P10/00—Bonding of wafers, substrates or parts of devices
    • H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
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    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
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    • H05K1/0313—Organic insulating material
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/01—Dielectrics
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    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
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    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/20—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by affixing prefabricated conductor pattern
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/675—Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
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    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0241—Manufacture or treatment of multiple TFTs using liquid deposition, e.g. printing
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    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/107—Integrated devices having multiple elements covered by H10F30/00 in a repetitive configuration, e.g. radiation detectors comprising photodiode arrays
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    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Led Device Packages (AREA)
  • Thin Film Transistor (AREA)
  • Micromachines (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Light Receiving Elements (AREA)
  • Optical Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Pressure Sensors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Structure Of Printed Boards (AREA)
  • Recrystallisation Techniques (AREA)
MYPI20090622 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics MY149475A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US82468306P 2006-09-06 2006-09-06
US94462607P 2007-06-18 2007-06-18

Publications (1)

Publication Number Publication Date
MY149475A true MY149475A (en) 2013-08-30

Family

ID=39158048

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI20090622 MY149475A (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
MYPI2012005126A MY172115A (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Family Applications After (1)

Application Number Title Priority Date Filing Date
MYPI2012005126A MY172115A (en) 2006-09-06 2007-09-06 Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics

Country Status (7)

Country Link
EP (1) EP2064710A4 (fr)
JP (3) JP5578509B2 (fr)
KR (5) KR102087337B1 (fr)
CN (2) CN103213935B (fr)
MY (2) MY149475A (fr)
TW (3) TWI485863B (fr)
WO (1) WO2008030960A2 (fr)

Families Citing this family (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7557433B2 (en) 2004-10-25 2009-07-07 Mccain Joseph H Microelectronic device with integrated energy source
US7799699B2 (en) 2004-06-04 2010-09-21 The Board Of Trustees Of The University Of Illinois Printable semiconductor structures and related methods of making and assembling
US8217381B2 (en) 2004-06-04 2012-07-10 The Board Of Trustees Of The University Of Illinois Controlled buckling structures in semiconductor interconnects and nanomembranes for stretchable electronics
US7521292B2 (en) 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
EP2650907B1 (fr) 2004-06-04 2024-10-23 The Board Of Trustees Of The University Of Illinois Procedes et dispositifs permettant de fabriquer et d'assembler des elements a semiconducteur imprimables
US7932123B2 (en) 2006-09-20 2011-04-26 The Board Of Trustees Of The University Of Illinois Release strategies for making transferable semiconductor structures, devices and device components
EP2104954B1 (fr) 2007-01-17 2022-03-16 The Board of Trustees of the University of Illinois Systèmes optiques fabriqués par un ensemble à base d'impression
TWI723953B (zh) * 2008-03-05 2021-04-11 美國伊利諾大學理事會 可延展且可折疊的電子裝置
US8470701B2 (en) 2008-04-03 2013-06-25 Advanced Diamond Technologies, Inc. Printable, flexible and stretchable diamond for thermal management
US7927976B2 (en) 2008-07-23 2011-04-19 Semprius, Inc. Reinforced composite stamp for dry transfer printing of semiconductor elements
WO2010036807A1 (fr) 2008-09-24 2010-04-01 The Board Of Trustees Of The University Of Illinois Réseaux de microcellules solaires au silicium ultramince
US8372726B2 (en) 2008-10-07 2013-02-12 Mc10, Inc. Methods and applications of non-planar imaging arrays
US9289132B2 (en) 2008-10-07 2016-03-22 Mc10, Inc. Catheter balloon having stretchable integrated circuitry and sensor array
US8097926B2 (en) 2008-10-07 2012-01-17 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US8389862B2 (en) 2008-10-07 2013-03-05 Mc10, Inc. Extremely stretchable electronics
US9119533B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Systems, methods, and devices having stretchable integrated circuitry for sensing and delivering therapy
US9123614B2 (en) 2008-10-07 2015-09-01 Mc10, Inc. Methods and applications of non-planar imaging arrays
US8886334B2 (en) 2008-10-07 2014-11-11 Mc10, Inc. Systems, methods, and devices using stretchable or flexible electronics for medical applications
US9545216B2 (en) 2011-08-05 2017-01-17 Mc10, Inc. Catheter balloon methods and apparatus employing sensing elements
KR101041139B1 (ko) * 2008-11-04 2011-06-13 삼성모바일디스플레이주식회사 박막트랜지스터, 그의 제조방법 및 그를 포함하는 유기전계발광표시장치
WO2010056857A2 (fr) * 2008-11-12 2010-05-20 Mc10, Inc. Dispositifs electroniques extremement etirables
WO2010059781A1 (fr) 2008-11-19 2010-05-27 Semprius, Inc. Impression d'éléments semi-conducteurs par transfert par poinçon élastomère assisté par cisaillement
JP2012515436A (ja) * 2009-01-12 2012-07-05 エムシー１０ インコーポレイテッド 非平面撮像アレイの方法及び応用
WO2010086034A1 (fr) 2009-01-30 2010-08-05 Interuniversitair Microelektronica Centrum Vzw Dispositif électronique extensible
KR101706915B1 (ko) 2009-05-12 2017-02-15 더 보드 오브 트러스티즈 오브 더 유니버시티 오브 일리노이 변형가능 및 반투과 디스플레이를 위한 초박형, 미세구조 무기발광다이오드의 인쇄 어셈블리
FR2947063B1 (fr) 2009-06-19 2011-07-01 Commissariat Energie Atomique Retroprojecteur
US8261660B2 (en) 2009-07-22 2012-09-11 Semprius, Inc. Vacuum coupled tool apparatus for dry transfer printing semiconductor elements
KR101077789B1 (ko) 2009-08-07 2011-10-28 한국과학기술원 Ｌｅｄ 디스플레이 제조 방법 및 이에 의하여 제조된 ｌｅｄ 디스플레이
KR101113692B1 (ko) 2009-09-17 2012-02-27 한국과학기술원 태양전지 제조방법 및 이에 의하여 제조된 태양전지
WO2011041727A1 (fr) 2009-10-01 2011-04-07 Mc10, Inc. Boîtiers protecteurs avec des circuits électroniques intégrés
US9936574B2 (en) 2009-12-16 2018-04-03 The Board Of Trustees Of The University Of Illinois Waterproof stretchable optoelectronics
US10441185B2 (en) 2009-12-16 2019-10-15 The Board Of Trustees Of The University Of Illinois Flexible and stretchable electronic systems for epidermal electronics
EP2513953B1 (fr) 2009-12-16 2017-10-18 The Board of Trustees of the University of Illionis Électrophysiologie faisant intervenir des équipements électroniques conformes
KR101405463B1 (ko) 2010-01-15 2014-06-27 그래핀스퀘어 주식회사 기체 및 수분 차단용 그래핀 보호막, 이의 형성 방법 및 그의 용도
US8450779B2 (en) * 2010-03-08 2013-05-28 International Business Machines Corporation Graphene based three-dimensional integrated circuit device
TWI646988B (zh) 2010-03-12 2019-01-11 美國伊利諾大學理事會 生物醫學裝置及其製造方法、流體遞送監視器、監視在管子中流動之流體的方法、近接感測器及感測兩個物件之間的距離的方法
CN104224171B (zh) 2010-03-17 2017-06-09 伊利诺伊大学评议会 基于生物可吸收基质的可植入生物医学装置
JP2013533754A (ja) * 2010-04-12 2013-08-29 タフツ・ユニバーシティ 絹電子部品
AU2011308078B2 (en) * 2010-09-27 2015-10-01 Techtonic Pty Ltd Undulatory structures
CN102001622B (zh) * 2010-11-08 2013-03-20 中国科学技术大学 空气桥式纳米器件的制备方法
US9442285B2 (en) 2011-01-14 2016-09-13 The Board Of Trustees Of The University Of Illinois Optical component array having adjustable curvature
WO2012125494A2 (fr) 2011-03-11 2012-09-20 Mc10, Inc. Dispositifs intégrés destinés à faciliter des dosages quantitatifs et la pose de diagnostics
TWI455341B (zh) * 2011-03-21 2014-10-01 Motech Ind Inc Method for manufacturing solar cells
US10189587B2 (en) * 2011-04-18 2019-01-29 Adidas Ag Process and apparatus for continuously encapsulating elongated components and encapsulated elongated components obtained
WO2012158709A1 (fr) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Barrettes de del à gestion thermique assemblées par impression
WO2012166686A2 (fr) 2011-05-27 2012-12-06 Mc10, Inc. Appareil électronique, optique et/ou mécanique et systèmes et procédés pour le fabriquer
US8934965B2 (en) 2011-06-03 2015-01-13 The Board Of Trustees Of The University Of Illinois Conformable actively multiplexed high-density surface electrode array for brain interfacing
CN102244015B (zh) * 2011-06-17 2012-12-19 华中科技大学 一种在预拉伸的弹性基板上进行柔性电子图案化的方法
US9757050B2 (en) 2011-08-05 2017-09-12 Mc10, Inc. Catheter balloon employing force sensing elements
EP2786131B1 (fr) 2011-09-01 2018-11-07 Mc10, Inc. Dispositif électronique pour détection d'une condition de tissu
DE112012004146T5 (de) 2011-10-05 2014-11-06 Mc10, Inc. Herzkatheter mit Verwendung oberflächentreuer Elektronik zur Abbildung
US9691873B2 (en) 2011-12-01 2017-06-27 The Board Of Trustees Of The University Of Illinois Transient devices designed to undergo programmable transformations
FR2985371A1 (fr) 2011-12-29 2013-07-05 Commissariat Energie Atomique Procede de fabrication d'une structure multicouche sur un support
US8492208B1 (en) * 2012-01-05 2013-07-23 International Business Machines Corporation Compressive (PFET) and tensile (NFET) channel strain in nanowire FETs fabricated with a replacement gate process
CN102610534A (zh) * 2012-01-13 2012-07-25 华中科技大学 一种可伸缩rfid电子标签及其制造方法
KR102034575B1 (ko) 2012-03-19 2019-10-21 루미리즈 홀딩 비.브이. 인광체의 도포 전 및 후의 발광 장치들에 대한 싱귤레이션
CN102610672A (zh) * 2012-03-23 2012-07-25 合肥工业大学 一种异质结型光电探测器及其制备方法
JP2015521303A (ja) * 2012-03-30 2015-07-27 ザ ボード オブ トラスティーズ オブ ザ ユニヴァーシ 表面への形状適合可能な付属物装着可能電子デバイス
US9247637B2 (en) 2012-06-11 2016-01-26 Mc10, Inc. Strain relief structures for stretchable interconnects
US9226402B2 (en) 2012-06-11 2015-12-29 Mc10, Inc. Strain isolation structures for stretchable electronics
US9295842B2 (en) 2012-07-05 2016-03-29 Mc10, Inc. Catheter or guidewire device including flow sensing and use thereof
JP2015521894A (ja) 2012-07-05 2015-08-03 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． 流量センシングを含むカテーテルデバイス
CN102903841B (zh) * 2012-09-18 2015-09-09 中国科学院宁波材料技术与工程研究所 一种温度控制的磁电子器件、其制备方法及应用
US9171794B2 (en) 2012-10-09 2015-10-27 Mc10, Inc. Embedding thin chips in polymer
CN105008949A (zh) 2012-10-09 2015-10-28 Mc10股份有限公司 与服装整合的保形电子装置
CN102983791A (zh) * 2012-10-26 2013-03-20 苏州大学 温差交流发电装置及其发电方法
KR102853941B1 (ko) 2012-12-28 2025-09-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR102051519B1 (ko) 2013-02-25 2019-12-03 삼성전자주식회사 파이버 상에 형성된 박막 트랜지스터 및 그 제조 방법
WO2014169170A1 (fr) 2013-04-12 2014-10-16 The Board Of Trustees Of The University Of Illinois Dispositifs électroniques transitoires inorganiques et organiques
US9706647B2 (en) 2013-05-14 2017-07-11 Mc10, Inc. Conformal electronics including nested serpentine interconnects
KR20160040670A (ko) 2013-08-05 2016-04-14 엠씨10, 인크 곡면부착형 전자기기를 포함하는 유연한 온도 센서
US10467926B2 (en) 2013-10-07 2019-11-05 Mc10, Inc. Conformal sensor systems for sensing and analysis
CN103560157B (zh) * 2013-11-19 2016-02-24 中国科学院上海微系统与信息技术研究所 应变结构及其制作方法
JP6711750B2 (ja) 2013-11-22 2020-06-17 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． 心臓活動の検知および分析のためのコンフォーマルセンサシステム
WO2015103580A2 (fr) 2014-01-06 2015-07-09 Mc10, Inc. Systèmes et dispositifs électroniques conformes encapsulés et procédés de fabrication et d'utilisation de ces derniers
KR20160129007A (ko) 2014-03-04 2016-11-08 엠씨10, 인크 전자 디바이스를 위한 다부분 유연성 봉지 하우징
JP6661242B2 (ja) 2014-03-12 2020-03-11 エムシー１０ インコーポレイテッドＭｃ１０，Ｉｎｃ． アッセイの変化の定量化のための測定装置および方法
CN103869607A (zh) * 2014-03-18 2014-06-18 无锡中微掩模电子有限公司 二元掩模铬金属膜去除方法
TWI576715B (zh) * 2014-05-02 2017-04-01 希諾皮斯股份有限公司 非暫態電腦可讀取媒體以及用於模擬積體電路處理的系統
EP3148924A1 (fr) 2014-05-28 2017-04-05 3M Innovative Properties Company Dispositifs mems sur substrat flexible
BR112015015380A2 (pt) 2014-07-11 2017-07-11 Intel Corp dispositivos eletrônicos inclináveis e estiráveis e métodos
KR102085212B1 (ko) * 2014-07-20 2020-03-05 엑스-셀레프린트 리미티드 마이크로-전사 인쇄를 위한 장치 및 방법들
KR102161644B1 (ko) 2014-08-20 2020-10-06 삼성디스플레이 주식회사 스트레쳐블 표시 패널 및 이를 포함하는 표시 장치
CN104153128B (zh) * 2014-08-26 2017-03-08 青岛大学 一种基于有序排列扭曲结构柔性可拉伸器件的制备方法
US9899330B2 (en) 2014-10-03 2018-02-20 Mc10, Inc. Flexible electronic circuits with embedded integrated circuit die
US10297572B2 (en) 2014-10-06 2019-05-21 Mc10, Inc. Discrete flexible interconnects for modules of integrated circuits
USD781270S1 (en) 2014-10-15 2017-03-14 Mc10, Inc. Electronic device having antenna
US9398705B2 (en) * 2014-12-02 2016-07-19 Flextronics Ap, Llc. Stretchable printed electronic sheets to electrically connect uneven two dimensional and three dimensional surfaces
US9991326B2 (en) 2015-01-14 2018-06-05 Panasonic Intellectual Property Management Co., Ltd. Light-emitting device comprising flexible substrate and light-emitting element
KR102456698B1 (ko) 2015-01-15 2022-10-19 삼성디스플레이 주식회사 신축성 표시 장치
KR102356697B1 (ko) * 2015-01-15 2022-01-27 삼성디스플레이 주식회사 신축성 표시 장치 및 그의 제조 방법
KR102320382B1 (ko) 2015-01-28 2021-11-02 삼성디스플레이 주식회사 전자 장치
EP3258837A4 (fr) 2015-02-20 2018-10-10 Mc10, Inc. Détection et configuration automatiques de dispositifs à porter sur soi sur la base d'un état, d'un emplacement et/ou d'une orientation sur le corps
US10398343B2 (en) 2015-03-02 2019-09-03 Mc10, Inc. Perspiration sensor
KR102335807B1 (ko) * 2015-03-10 2021-12-08 삼성디스플레이 주식회사 표시 장치
KR102385327B1 (ko) * 2015-04-06 2022-04-12 삼성디스플레이 주식회사 플렉서블 표시 장치 및 이의 제조 방법
US10677647B2 (en) 2015-06-01 2020-06-09 The Board Of Trustees Of The University Of Illinois Miniaturized electronic systems with wireless power and near-field communication capabilities
EP3304130B1 (fr) 2015-06-01 2021-10-06 The Board of Trustees of the University of Illinois Approche alternative de détection d'uv
US9841548B2 (en) 2015-06-30 2017-12-12 Apple Inc. Electronic devices with soft input-output components
US10026721B2 (en) 2015-06-30 2018-07-17 Apple Inc. Electronic devices with soft input-output components
CN105049033B (zh) * 2015-07-01 2017-11-24 东南大学 基于砷化镓基低漏电流双悬臂梁开关的或非门
US10653332B2 (en) 2015-07-17 2020-05-19 Mc10, Inc. Conductive stiffener, method of making a conductive stiffener, and conductive adhesive and encapsulation layers
US10709384B2 (en) 2015-08-19 2020-07-14 Mc10, Inc. Wearable heat flux devices and methods of use
CN108290070A (zh) 2015-10-01 2018-07-17 Mc10股份有限公司 用于与虚拟环境相互作用的方法和系统
WO2017062508A1 (fr) 2015-10-05 2017-04-13 Mc10, Inc. Procédé et système de neuromodulation et de stimulation
DE102015014256B4 (de) 2015-11-05 2020-06-18 Airbus Defence and Space GmbH Mikroelektronisches Modul zur Reinigung einer Oberfläche, Modularray und Verfahren zur Reinigung einer Oberfläche
US10925543B2 (en) 2015-11-11 2021-02-23 The Board Of Trustees Of The University Of Illinois Bioresorbable silicon electronics for transient implants
WO2017085849A1 (fr) * 2015-11-19 2017-05-26 三井金属鉱業株式会社 Procédé de fabrication de carte de circuit imprimé comportant une couche diélectrique
CN105405983B (zh) * 2015-12-14 2017-05-10 吉林大学 具有周期性规则褶皱结构的可拉伸有机电致发光器件
CN106920800B (zh) * 2015-12-25 2019-07-23 昆山工研院新型平板显示技术中心有限公司 柔性显示器件及其形成方法
CN108781313B (zh) 2016-02-22 2022-04-08 美谛达解决方案公司 用以贴身获取传感器信息的耦接的集线器和传感器节点的系统、装置和方法
EP3420732B8 (fr) 2016-02-22 2020-12-30 Medidata Solutions, Inc. Système, dispositifs et procédé pour l'émission de données et d'énergie sur le corps
KR102455039B1 (ko) * 2016-03-18 2022-10-17 삼성디스플레이 주식회사 신축성 디스플레이 장치
CN109310340A (zh) 2016-04-19 2019-02-05 Mc10股份有限公司 用于测量汗液的方法和系统
ITUA20162943A1 (it) * 2016-04-27 2017-10-27 Pilegrowth Tech S R L Metodo per la fabbricazione industriale di una struttura a semiconduttore a ridotto incurvamento.
CN109073951B (zh) * 2016-05-31 2022-05-13 伊英克公司 可伸展的电光显示器
US10002222B2 (en) * 2016-07-14 2018-06-19 Arm Limited System and method for perforating redundant metal in self-aligned multiple patterning
US10447347B2 (en) 2016-08-12 2019-10-15 Mc10, Inc. Wireless charger and high speed data off-loader
CN106229038B (zh) * 2016-09-07 2017-10-24 东华大学 一种基于多级结构石墨烯的可拉伸透明导电弹性体的制备方法
JP2018060932A (ja) * 2016-10-06 2018-04-12 ローム株式会社 Ｌｅｄパッケージ
US10845449B2 (en) 2016-10-20 2020-11-24 Quantum Diamond Technologies Inc. Methods and apparatus for magnetic particle analysis using diamond magnetic imaging
JP2018078272A (ja) * 2016-10-31 2018-05-17 スリーエム イノベイティブ プロパティズ カンパニー 三次元形状熱伝導性成形体、及びその製造方法
CN106601933B (zh) * 2016-12-12 2018-02-23 吉林大学 一种具有规则褶皱结构的可拉伸电子器件的制备方法
EP3559668B1 (fr) 2016-12-23 2023-07-19 Quantum Diamond Technologies Inc. Procédés et appareil pour des tests à plusieurs billes magnétiques
DE102017100053A1 (de) 2017-01-03 2018-07-05 Infineon Technologies Ag Rahmenmontage nach Folienexpansion
US11127778B2 (en) 2017-02-24 2021-09-21 Flexucell Aps Light emitting transducer
JP2018179501A (ja) * 2017-04-03 2018-11-15 日本精工株式会社 近接覚センサ
CN110710072B (zh) * 2017-04-12 2022-07-22 感应光子公司 具有结合光束转向的超小型垂直腔表面发射激光发射器的器件
US20180323239A1 (en) * 2017-05-03 2018-11-08 Innolux Corporation Display device
CN107248518B (zh) 2017-05-26 2020-04-17 京东方科技集团股份有限公司 光电传感器及其制作方法、显示装置
WO2018229609A1 (fr) * 2017-06-12 2018-12-20 3M Innovative Properties Company Conducteurs extensibles
WO2019012345A1 (fr) * 2017-07-14 2019-01-17 King Abdullah University Of Science And Technology Imageur souple et étirable, procédé de fabrication d'un imageur souple et étirable, et procédé d'utilisation d'un dispositif d'imagerie comportant un imageur souple et étirable
ES2932362T3 (es) 2017-07-31 2023-01-18 Quantum Diamond Tech Inc Sistema sensor que comprende un cartucho de muestras que incluye una membrana flexible para soportar una muestra
EP3676009A4 (fr) 2017-09-01 2021-06-16 Miroculus Inc. Dispositifs microfluidiques numériques et leurs procédés d'utilisation
CN107634054A (zh) * 2017-09-18 2018-01-26 天津大学 柔性衬底上硅纳米膜转数字逻辑反相器及其制作方法
US10205303B1 (en) * 2017-10-18 2019-02-12 Lumentum Operations Llc Vertical-cavity surface-emitting laser thin wafer bowing control
EP3709775B1 (fr) * 2017-11-07 2025-07-02 Dai Nippon Printing Co., Ltd. Substrat de circuit étirable et article
CN108009317A (zh) * 2017-11-09 2018-05-08 武汉大学 一种复合材料的热导率研究仿真和建模方法
EP3709943B1 (fr) * 2017-11-15 2024-07-24 Smith & Nephew PLC Pansements et systèmes de surveillance et/ou de traitement de plaie activés à capteur intégré
CN109859623B (zh) * 2017-11-30 2021-05-18 云谷（固安）科技有限公司 阵列基板及其制备方法及显示屏
KR101974575B1 (ko) * 2017-12-01 2019-05-02 포항공과대학교 산학협력단 싱크로트론 엑스선을 이용한 초소형 다중 경사 구조체 제조 방법
CN108417592A (zh) * 2018-02-12 2018-08-17 中国科学院半导体研究所 红外成像器件及其制备方法、仿生红外球面相机
KR102077306B1 (ko) * 2018-02-14 2020-02-13 광운대학교 산학협력단 실시간 당 모니터링 센서 시스템 및 저온 용액 공정에 기반한 당센서의 제조 방법
CN109346504B (zh) * 2018-09-30 2021-06-29 云谷（固安）科技有限公司 柔性显示面板及显示装置
CN109437091A (zh) * 2018-10-23 2019-03-08 中山大学 一种在弹性衬底上制备微纳结构的方法
CN111148364B (zh) * 2018-11-05 2021-01-26 北京梦之墨科技有限公司 一种柔性可拉伸电路及其制作方法
US12091357B2 (en) 2021-08-05 2024-09-17 Corning Incorporated Dynamically bendable automotive interior display systems
EP3684640B1 (fr) * 2018-12-10 2021-09-29 Corning Incorporated Systèmes d'affichage intérieur d'automobile pouvant être courbés dynamiquement
CN109671869B (zh) * 2018-12-12 2020-06-16 武汉华星光电半导体显示技术有限公司 复合膜层的制作方法及显示器件
CN109637366B (zh) * 2018-12-28 2020-10-09 厦门天马微电子有限公司 治具和显示模组的弯折方法
WO2020176816A1 (fr) 2019-02-28 2020-09-03 Miroculus Inc. Dispositifs micro-fluidiques numériques et leurs procédés d'utilisation
CN111724676B (zh) * 2019-03-21 2022-09-02 昆山工研院新型平板显示技术中心有限公司 可拉伸导线及其制作方法和显示装置
US11738345B2 (en) 2019-04-08 2023-08-29 Miroculus Inc. Multi-cartridge digital microfluidics apparatuses and methods of use
DE102019111964A1 (de) * 2019-05-08 2020-11-12 Danfoss Silicon Power Gmbh Halbleitermodul mit einem ersten Substrat, einem zweiten Substrat und einen Abstandhalter, der die Substrate voneinander trennt
CN110393507B (zh) * 2019-08-01 2020-12-25 清华大学 柔性可延展电子器件的结构设计及其制造方法
CN110797148B (zh) * 2019-10-08 2021-07-30 上海交通大学 适用于无绝缘线圈的超导带材、无绝缘线圈及其制备方法
CN110683508B (zh) * 2019-10-18 2023-05-23 北京元芯碳基集成电路研究院 一种碳纳米管平行阵列的制备方法
CN110808295B (zh) * 2019-11-11 2021-04-23 重庆中易智芯科技有限责任公司 一种三维电致伸缩收集电极的半导体探测器及其制备方法
CN110697646A (zh) * 2019-11-22 2020-01-17 上海幂方电子科技有限公司 一种电子皮肤及其制备方法
US11062936B1 (en) 2019-12-19 2021-07-13 X Display Company Technology Limited Transfer stamps with multiple separate pedestals
CN111063658B (zh) * 2019-12-30 2020-09-29 清华大学 柔性可延展的电子器件的制造方法
WO2021159214A1 (fr) * 2020-02-12 2021-08-19 Rayleigh Solar Tech Inc. Cellules solaires pérovskite à haute performance, conception de module et procédés de fabrication associés
GB2593864B (en) * 2020-02-28 2023-01-04 X Fab France Sas Improved transfer printing for RF applications
CN112967971B (zh) * 2020-05-27 2023-04-18 重庆康佳光电技术研究院有限公司 一种Micro-LED的转移基板及其制备方法
KR102393781B1 (ko) * 2020-07-07 2022-05-04 서울대학교산학협력단 유연 소자
CN112133198B (zh) * 2020-09-29 2022-04-22 厦门天马微电子有限公司 可拉伸显示面板及可拉伸显示装置
CN112606585B (zh) * 2020-12-02 2022-05-31 潍坊歌尔微电子有限公司 器件转印处理方法及微型麦克风防尘装置转印处理方法
KR102591096B1 (ko) * 2020-12-15 2023-10-18 연세대학교 산학협력단 인장 변형을 이용한 광 검출기 제조 방법, 이에 의해 제조되는 광 검출기, 및 그 제조 장치
KR102412729B1 (ko) 2021-01-18 2022-06-23 연세대학교 산학협력단 신축성 디스플레이 장치
KR102553142B1 (ko) * 2021-06-25 2023-07-06 경희대학교 산학협력단 감도 향상 구조를 갖는 전도성 고분자 복합재 기반 압저항 압력센서 및 그 제조방법
KR102582188B1 (ko) * 2021-07-22 2023-09-26 한국과학기술원 레이저 커팅된 플라스틱 기판을 활용한 신축 유기 발광 다이오드 및 그 제작 방법
CN113542755B (zh) * 2021-07-27 2022-06-21 展讯通信（上海）有限公司 二维楔形遮罩的产生方法及系统
CN115915816A (zh) * 2021-08-16 2023-04-04 华为技术有限公司 可拉伸装置及其制作方法
US12217925B2 (en) 2021-08-25 2025-02-04 Beijing Boe Technology Development Co., Ltd. Radio frequency micro-electro-mechanical switch and radio frequency device
CN114286513B (zh) * 2021-11-30 2024-02-06 通元科技(惠州)有限公司 一种非对称预应力消除型led背板及其制作方法
CN114355489B (zh) * 2022-01-13 2023-05-16 西华大学 一种基于dmd数字光刻的曲面复眼透镜及其制备方法
KR102711952B1 (ko) 2022-01-20 2024-09-27 국립공주대학교 산학협력단 물결 모양 배선 및 이의 제조방법
CA3243135A1 (fr) * 2022-01-21 2023-07-27 Raymond DeCorby Capteurs et transducteurs de pression optiques monolithiques
WO2023187834A1 (fr) * 2022-03-30 2023-10-05 Council Of Scientific And Industrial Research Procédé de fabrication de supports de puce en silicium à l'aide d'un micro-usinage en masse humide pour des applications de détecteur ir
KR102749617B1 (ko) * 2022-07-08 2025-01-02 국립공주대학교 산학협력단 물결형 연신 배선 및 그 제조 방법
KR102906153B1 (ko) * 2023-03-02 2025-12-30 경희대학교 산학협력단 3d프린팅과 압축좌굴을 이용한 3차원 필름구조 제작방법, 그 제작방법을 적용한 소자 및 그 제조방법
CN116313797B (zh) * 2023-03-24 2025-08-15 厦门市三安集成电路有限公司 Hemt射频器件的制作方法及hemt射频器件
IT202300009687A1 (it) * 2023-05-15 2024-11-15 Istituto Naz Fisica Nucleare Contenitore per rivelatore di radiazioni e apparato rivelatore
CN117405253A (zh) * 2023-10-11 2024-01-16 北京航空航天大学杭州创新研究院 一种自供电温度传感电子皮肤及其制备方法
KR102916893B1 (ko) * 2024-03-15 2026-01-30 영남대학교 산학협력단 신축성 디스플레이를 위한 오리가미 구조 기반 선택적 원격 에피택시 방법
CN119761127B (zh) * 2024-12-20 2025-12-05 湖北江城实验室 半导体结构的设计方法、设计设备及计算机可读存储介质

Family Cites Families (33)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5763864A (en) * 1980-09-29 1982-04-17 Messerschmitt Boelkow Blohm Solar battery mechanism
US4766670A (en) * 1987-02-02 1988-08-30 International Business Machines Corporation Full panel electronic packaging structure and method of making same
US5086785A (en) * 1989-08-10 1992-02-11 Abrams/Gentille Entertainment Inc. Angular displacement sensors
US5475514A (en) 1990-12-31 1995-12-12 Kopin Corporation Transferred single crystal arrayed devices including a light shield for projection displays
US5375397B1 (en) * 1993-06-22 1998-11-10 Robert J Ferrand Curve-conforming sensor array pad and method of measuring saddle pressures on a horse
JPH08298334A (ja) * 1995-04-26 1996-11-12 Mitsubishi Electric Corp 太陽電池板
US6784023B2 (en) 1996-05-20 2004-08-31 Micron Technology, Inc. Method of fabrication of stacked semiconductor devices
DE19637626A1 (de) * 1996-09-16 1998-03-26 Bosch Gmbh Robert Flexible Leiterbahnverbindung
FR2786037B1 (fr) * 1998-11-16 2001-01-26 Alstom Technology Barre de conduction electrique de type blinde pour poste electrique haute tension
US6150602A (en) * 1999-05-25 2000-11-21 Hughes Electronics Corporation Large area solar cell extended life interconnect
EP1198852B1 (fr) * 1999-07-21 2009-12-02 E Ink Corporation Procedes preferes de production d'elements de circuits electriques utilises pour commander un affichage electronique
JP2001352089A (ja) * 2000-06-08 2001-12-21 Showa Shell Sekiyu Kk 熱膨張歪み防止型太陽電池モジュール
US6743982B2 (en) * 2000-11-29 2004-06-01 Xerox Corporation Stretchable interconnects using stress gradient films
GB0029312D0 (en) * 2000-12-01 2001-01-17 Philips Corp Intellectual Pty Flexible electronic device
EP1368699B8 (fr) * 2001-03-06 2016-07-13 Samsung Electronics Co., Ltd. Dispositif d'affichage
US7273987B2 (en) * 2002-03-21 2007-09-25 General Electric Company Flexible interconnect structures for electrical devices and light sources incorporating the same
JP3980918B2 (ja) * 2002-03-28 2007-09-26 株式会社東芝 アクティブマトリクス基板及びその製造方法、表示装置
JP2003323741A (ja) * 2002-04-30 2003-11-14 National Institute Of Advanced Industrial & Technology 光学的メモリ
US7465678B2 (en) * 2003-03-28 2008-12-16 The Trustees Of Princeton University Deformable organic devices
US20050227389A1 (en) * 2004-04-13 2005-10-13 Rabin Bhattacharya Deformable organic devices
US7491892B2 (en) * 2003-03-28 2009-02-17 Princeton University Stretchable and elastic interconnects
GB0323285D0 (en) * 2003-10-04 2003-11-05 Koninkl Philips Electronics Nv Device and method of making a device having a patterned layer on a flexible substrate
WO2005098969A1 (fr) * 2004-04-08 2005-10-20 Sharp Kabushiki Kaisha Batterie solaire et module de batterie solaire
EP2650907B1 (fr) * 2004-06-04 2024-10-23 The Board Of Trustees Of The University Of Illinois Procedes et dispositifs permettant de fabriquer et d'assembler des elements a semiconducteur imprimables
US7521292B2 (en) * 2004-06-04 2009-04-21 The Board Of Trustees Of The University Of Illinois Stretchable form of single crystal silicon for high performance electronics on rubber substrates
US7629691B2 (en) * 2004-06-16 2009-12-08 Honeywell International Inc. Conductor geometry for electronic circuits fabricated on flexible substrates
FR2875339B1 (fr) * 2004-09-16 2006-12-08 St Microelectronics Sa Transistor mos a grille deformable
US20060132025A1 (en) * 2004-12-22 2006-06-22 Eastman Kodak Company Flexible display designed for minimal mechanical strain
US20060160943A1 (en) * 2005-01-18 2006-07-20 Weir James P Water-based flock adhesives for thermoplastic substrates
CN2779218Y (zh) * 2005-02-01 2006-05-10 广德利德照明有限公司 一种管状led装饰灯的连接导线
MY152238A (en) * 2005-06-02 2014-09-15 Univ Illinois Printable semiconductor structures and related methods of making and assembling
JP7099160B2 (ja) 2018-08-10 2022-07-12 住友電気工業株式会社 光ファイバの製造方法
US11394720B2 (en) 2019-12-30 2022-07-19 Itron, Inc. Time synchronization using trust aggregation

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JP5735585B2 (ja) 2015-06-17
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CN103213935B (zh) 2017-03-01
EP2064710A2 (fr) 2009-06-03
CN101681695B (zh) 2013-04-10
JP5578509B2 (ja) 2014-08-27
TW201434163A (zh) 2014-09-01
KR20090086199A (ko) 2009-08-11
MY172115A (en) 2019-11-14
TW201735380A (zh) 2017-10-01
TWI654770B (zh) 2019-03-21
EP2064710A4 (fr) 2011-05-04
CN101681695A (zh) 2010-03-24
KR20160140962A (ko) 2016-12-07
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KR101612749B1 (ko) 2016-04-27
CN103213935A (zh) 2013-07-24
JP2013239716A (ja) 2013-11-28
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