MY158676A - Photovoltaic devices and method of making - Google Patents

Photovoltaic devices and method of making

Info

Publication number
MY158676A
MY158676A MYPI2012002390A MYPI2012002390A MY158676A MY 158676 A MY158676 A MY 158676A MY PI2012002390 A MYPI2012002390 A MY PI2012002390A MY PI2012002390 A MYPI2012002390 A MY PI2012002390A MY 158676 A MY158676 A MY 158676A
Authority
MY
Malaysia
Prior art keywords
region
additive
making
concentration
photovoltaic devices
Prior art date
Application number
MYPI2012002390A
Other languages
English (en)
Inventor
Johnson James Neil
Korevaar Bastiaan Arie
Sommerer Timothy John
Original Assignee
First Solar Malaysia Sdn Bhd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by First Solar Malaysia Sdn Bhd filed Critical First Solar Malaysia Sdn Bhd
Publication of MY158676A publication Critical patent/MY158676A/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/123Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • H10F77/1233Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00Individual photovoltaic cells, e.g. solar cells
    • H10F10/10Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/162Photovoltaic cells having only PN heterojunction potential barriers comprising only Group II-VI materials, e.g. CdS/CdTe photovoltaic cells
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/121Active materials comprising only selenium or only tellurium
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/121Active materials comprising only selenium or only tellurium
    • H10F77/1215Active materials comprising only selenium or only tellurium characterised by the dopants
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/12Active materials
    • H10F77/123Active materials comprising only Group II-VI materials, e.g. CdS, ZnS or HgCdTe
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00Constructional details of devices covered by this subclass
    • H10F77/10Semiconductor bodies
    • H10F77/14Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/543Solar cells from Group II-VI materials
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Photovoltaic Devices (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
MYPI2012002390A 2011-06-01 2012-05-29 Photovoltaic devices and method of making MY158676A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/150,485 US9608144B2 (en) 2011-06-01 2011-06-01 Photovoltaic devices and method of making

Publications (1)

Publication Number Publication Date
MY158676A true MY158676A (en) 2016-10-31

Family

ID=46197087

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012002390A MY158676A (en) 2011-06-01 2012-05-29 Photovoltaic devices and method of making

Country Status (5)

Country Link
US (1) US9608144B2 (fr)
EP (1) EP2530724A3 (fr)
CN (1) CN102881735B (fr)
AU (1) AU2012203186A1 (fr)
MY (1) MY158676A (fr)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9447489B2 (en) * 2011-06-21 2016-09-20 First Solar, Inc. Methods of making photovoltaic devices and photovoltaic devices
WO2013119550A1 (fr) * 2012-02-10 2013-08-15 Alliance For Sustainable Energy, Llc Dispositifs photovoltaïques à film mince mini-conducteur avec une couche tampon à conductivité minimale
US20140060633A1 (en) * 2012-08-31 2014-03-06 Primestar Solar, Inc. BACK CONTACT PASTE WITH Te ENRICHMENT CONTROL IN THIN FILM PHOTOVOLTAIC DEVICES
US20150270423A1 (en) 2012-11-19 2015-09-24 Alliance For Sustainable Energy, Llc Devices and methods featuring the addition of refractory metals to contact interface layers
US10672920B2 (en) * 2015-03-12 2020-06-02 Vitro Flat Glass Llc Article with buffer layer
WO2018071509A1 (fr) 2016-10-12 2018-04-19 First Solar, Inc. Dispositif photovoltaïque à jonction tunnel transparente
CN107039541A (zh) * 2016-12-28 2017-08-11 成都中建材光电材料有限公司 一种柔性碲化镉薄膜电池及其制作方法
CN106784036A (zh) * 2016-12-28 2017-05-31 成都中建材光电材料有限公司 一种掺杂碲化镉薄膜电池及其制作方法
MY192457A (en) * 2017-02-27 2022-08-22 First Solar Inc Thin film stacks for group v doping, photovoltaic devices including the same, and methods for forming photovoltaic devices with thin film stacks
CN107731963A (zh) * 2017-11-06 2018-02-23 成都中建材光电材料有限公司 一种碲化镉薄膜太阳能电池的吸收层掺磷工艺
MY207983A (en) 2017-12-07 2025-03-31 First Solar Inc Photovoltaic devices and semiconductor layers with group v dopants and methods for forming the same
MY206714A (en) 2018-10-24 2025-01-03 First Solar Inc Buffer layers for photovoltaic devices with group v doping
CN111739959B (zh) * 2020-06-05 2021-06-25 中国建材国际工程集团有限公司 一种高效碲化镉薄膜太阳能电池及其制备方法
CN113555461B (zh) * 2021-06-09 2023-06-13 浙江芯科半导体有限公司 一种基于SiC和二硒化钨异质结的光电二极管及其制备方法
CN113964244B (zh) * 2021-12-22 2022-03-11 成都中建材光电材料有限公司 太阳能薄膜电池及其制作方法

Family Cites Families (18)

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US4035197A (en) 1976-03-30 1977-07-12 Eastman Kodak Company Barrier type photovoltaic cells with enhanced open-circuit voltage, and process of manufacture
US4207119A (en) 1978-06-02 1980-06-10 Eastman Kodak Company Polycrystalline thin film CdS/CdTe photovoltaic cell
US4335266A (en) * 1980-12-31 1982-06-15 The Boeing Company Methods for forming thin-film heterojunction solar cells from I-III-VI.sub.2
US4388483A (en) * 1981-09-08 1983-06-14 Monosolar, Inc. Thin film heterojunction photovoltaic cells and methods of making the same
US4379943A (en) 1981-12-14 1983-04-12 Energy Conversion Devices, Inc. Current enhanced photovoltaic device
US4710589A (en) 1986-10-21 1987-12-01 Ametek, Inc. Heterojunction p-i-n photovoltaic cell
DE4132882C2 (de) 1991-10-03 1996-05-09 Antec Angewandte Neue Technolo Verfahren zur Herstellung von pn CdTe/CdS-Dünnschichtsolarzellen
US5501744A (en) * 1992-01-13 1996-03-26 Photon Energy, Inc. Photovoltaic cell having a p-type polycrystalline layer with large crystals
US20070023081A1 (en) * 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
GB0608987D0 (en) 2006-05-08 2006-06-14 Univ Wales Bangor Manufacture of CdTe photovoltaic cells using MOCVD
US8003883B2 (en) * 2007-01-11 2011-08-23 General Electric Company Nanowall solar cells and optoelectronic devices
KR101503557B1 (ko) 2007-09-25 2015-03-17 퍼스트 솔라, 인코포레이티드 계면 층을 포함한 광기전 장치
KR101614554B1 (ko) * 2007-11-02 2016-04-21 퍼스트 솔라, 인코포레이티드 도핑된 반도체 막을 포함하는 광기전 장치
US8664524B2 (en) * 2008-07-17 2014-03-04 Uriel Solar, Inc. High power efficiency, large substrate, polycrystalline CdTe thin film semiconductor photovoltaic cell structures grown by molecular beam epitaxy at high deposition rate for use in solar electricity generation
US8334455B2 (en) * 2008-07-24 2012-12-18 First Solar, Inc. Photovoltaic devices including Mg-doped semiconductor films
US20100126580A1 (en) * 2008-11-26 2010-05-27 Farrell James F CdTe deposition process for solar cells
US20100276785A1 (en) * 2009-04-30 2010-11-04 Kishore Kamath Doping of semiconductor layer for improved efficiency of semiconductor structures
WO2010132138A1 (fr) 2009-05-12 2010-11-18 First Solar, Inc. Dispositif photovoltaïque

Also Published As

Publication number Publication date
EP2530724A2 (fr) 2012-12-05
EP2530724A3 (fr) 2015-02-25
US9608144B2 (en) 2017-03-28
CN102881735A (zh) 2013-01-16
US20120305064A1 (en) 2012-12-06
AU2012203186A1 (en) 2012-12-20
CN102881735B (zh) 2017-08-15

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