MY166615A - Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method - Google Patents

Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method

Info

Publication number
MY166615A
MY166615A MYPI2012700718A MYPI2012700718A MY166615A MY 166615 A MY166615 A MY 166615A MY PI2012700718 A MYPI2012700718 A MY PI2012700718A MY PI2012700718 A MYPI2012700718 A MY PI2012700718A MY 166615 A MY166615 A MY 166615A
Authority
MY
Malaysia
Prior art keywords
electrolytic copper
copper plating
highly pure
anode
plating
Prior art date
Application number
MYPI2012700718A
Inventor
Kiyotaka Nakaya
Koichi Kita
Satoshi Kumagai
Naoki Kato
Mami Watanabe
Original Assignee
Mitsubishi Materials Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Materials Corp filed Critical Mitsubishi Materials Corp
Publication of MY166615A publication Critical patent/MY166615A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrolytic Production Of Metals (AREA)

Abstract

PROVIDED ARE A HIGHLY PURE COPPER ANODE FOR ELECTROLYTIC COPPER PLATING, A METHOD FOR MANUFACTURING THE SAME, AND AN ELECTROLYTIC COPPER PLATING METHOD USING THE HIGHLY PURE COPPER ANODE. THE HIGHLY PURE COPPER ANODE OBTAINS A CRYSTAL GRAIN BOUNDARY STRUCTURE HAVING A SPECIAL GRAIN BOUNDARY RATIO LσN/LN OF 0.35 OR MORE. LN IS A UNIT TOTAL SPECIAL GRAIN BOUNDARY LENGTH. LσN IS A UNIT TOTAL SPECIAL BOUNDARY LENGTH. BY HAVING THE CONFIGURATION DESCRIBED ABOVE, PLATING DEFECT CAN BE REDUCED BY SUPPRESSING THE OCCURRENCE OF THE PARTICLES, SUCH AS THE SLIME OR THE LIKE, WHICH ARE GENERATED ON THE ANODE SIDE IN THE PLATING BATH.
MYPI2012700718A 2010-03-30 2011-03-25 Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method MY166615A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2010077215A JP5376168B2 (en) 2010-03-30 2010-03-30 High purity copper anode for electrolytic copper plating, manufacturing method thereof, and electrolytic copper plating method

Publications (1)

Publication Number Publication Date
MY166615A true MY166615A (en) 2018-07-17

Family

ID=44712199

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012700718A MY166615A (en) 2010-03-30 2011-03-25 Highly pure copper anode for electrolytic copper plating, method for manufacturing same, and electrolytic copper plating method

Country Status (7)

Country Link
US (1) US20130075272A1 (en)
JP (1) JP5376168B2 (en)
KR (1) KR20130018655A (en)
CN (1) CN102844472B (en)
MY (1) MY166615A (en)
TW (1) TWI534303B (en)
WO (1) WO2011122493A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5752736B2 (en) * 2013-04-08 2015-07-22 三菱マテリアル株式会社 Sputtering target
JP5783293B1 (en) * 2014-04-22 2015-09-24 三菱マテリアル株式会社 Material for cylindrical sputtering target
EP3506332B1 (en) * 2017-12-29 2020-12-23 Jeol Ltd. Scanning electron microscope and analysis method
TWI749818B (en) * 2020-10-22 2021-12-11 元智大學 Method for microstructure modification of conducting lines
US20240396242A1 (en) * 2021-09-02 2024-11-28 Mitsubishi Materials Corporation Terminal material with plating film and copper sheet for terminal material

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3403918B2 (en) * 1997-06-02 2003-05-06 株式会社ジャパンエナジー High purity copper sputtering target and thin film
JP3859384B2 (en) * 1999-03-08 2006-12-20 日鉱金属株式会社 Rolled copper foil for flexible printed circuit board having excellent flexibility and manufacturing method thereof
JP2001240949A (en) * 2000-02-29 2001-09-04 Mitsubishi Materials Corp Method for producing high-purity copper processed material having fine crystal grains
JP4123330B2 (en) * 2001-03-13 2008-07-23 三菱マテリアル株式会社 Phosphorus copper anode for electroplating
KR100877923B1 (en) * 2001-06-07 2009-01-12 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 Electrolytic Copper Plating
JP4076751B2 (en) * 2001-10-22 2008-04-16 日鉱金属株式会社 Electro-copper plating method, phosphor-containing copper anode for electrolytic copper plating, and semiconductor wafer plated with these and having less particle adhesion
JP4011336B2 (en) * 2001-12-07 2007-11-21 日鉱金属株式会社 Electro-copper plating method, pure copper anode for electro-copper plating, and semiconductor wafer plated with these with less particle adhesion
JP4064121B2 (en) * 2002-02-13 2008-03-19 日鉱金属株式会社 Electro-copper plating method using phosphorous copper anode
US20030188975A1 (en) * 2002-04-05 2003-10-09 Nielsen Thomas D. Copper anode for semiconductor interconnects
JP5066577B2 (en) * 2007-11-01 2012-11-07 Ｊｘ日鉱日石金属株式会社 Copper anode or phosphorus-containing copper anode, method of electrolytic copper plating on semiconductor wafer, and semiconductor wafer with less particle adhesion
JP4607165B2 (en) * 2007-11-20 2011-01-05 Ｊｘ日鉱日石金属株式会社 Electro copper plating method
EP2222897B1 (en) * 2007-12-18 2017-02-08 Integran Technologies Inc. Method for preparing polycrystalline structures having improved mechanical and physical properties

Also Published As

Publication number Publication date
JP5376168B2 (en) 2013-12-25
JP2011208224A (en) 2011-10-20
US20130075272A1 (en) 2013-03-28
CN102844472A (en) 2012-12-26
TW201202487A (en) 2012-01-16
WO2011122493A1 (en) 2011-10-06
CN102844472B (en) 2015-11-25
TWI534303B (en) 2016-05-21
KR20130018655A (en) 2013-02-25

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