MY170314A - Sputtering target - Google Patents

Sputtering target

Info

Publication number
MY170314A
MY170314A MYPI2015701152A MYPI2015701152A MY170314A MY 170314 A MY170314 A MY 170314A MY PI2015701152 A MYPI2015701152 A MY PI2015701152A MY PI2015701152 A MYPI2015701152 A MY PI2015701152A MY 170314 A MY170314 A MY 170314A
Authority
MY
Malaysia
Prior art keywords
sputtering target
oxide
phases
contain
sputtering
Prior art date
Application number
MYPI2015701152A
Inventor
Atsushi Sato
Atsutoshi Arakawa
Hideo Takami
Yuichiro Nakamura
Original Assignee
Jx Nippon Mining & Metals Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jx Nippon Mining & Metals Corp filed Critical Jx Nippon Mining & Metals Corp
Publication of MY170314A publication Critical patent/MY170314A/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

A sintered compact sputtering target having a structure in which metal phases and oxide phases are uniformly dispersed, wherein the metal phases contain Co, Pt and Mn as components, and the oxide phases contain an oxide having at least Mn as a constituent. The sputtering target of the present invention yields superior effects of being able to reduce the amount of particles generated during sputtering and improve the yield during deposition. Figure 1
MYPI2015701152A 2013-03-12 2014-01-20 Sputtering target MY170314A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013049130 2013-03-12

Publications (1)

Publication Number Publication Date
MY170314A true MY170314A (en) 2019-07-17

Family

ID=51536414

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2015701152A MY170314A (en) 2013-03-12 2014-01-20 Sputtering target

Country Status (5)

Country Link
JP (1) JP5801496B2 (en)
MY (1) MY170314A (en)
SG (1) SG11201501365WA (en)
TW (1) TWI608113B (en)
WO (1) WO2014141737A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6027699B1 (en) * 2016-02-19 2016-11-16 デクセリアルズ株式会社 Mn—Zn—W—O-based sputtering target and method for producing the same
US11837450B2 (en) 2016-02-19 2023-12-05 Jx Metals Corporation Sputtering target for magnetic recording medium, and magnetic thin film
WO2020031459A1 (en) * 2018-08-09 2020-02-13 Ｊｘ金属株式会社 Sputtering target, granular film, and perpendicular magnetic recording medium
TWI727322B (en) * 2018-08-09 2021-05-11 日商Ｊｘ金屬股份有限公司 Sputtering target and magnetic film
CN112585295B (en) * 2018-08-09 2023-04-04 Ｊｘ金属株式会社 Sputtering target, magnetic film, and perpendicular magnetic recording medium

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080131735A1 (en) * 2006-12-05 2008-06-05 Heraeus Incorporated Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording
EP2185304B1 (en) * 2007-09-07 2013-07-17 E. I. du Pont de Nemours and Company Method for the production of a multi-element alloy powder containing silver and at least two non-silver containing elements
SG185768A1 (en) * 2010-07-20 2013-01-30 Jx Nippon Mining & Metals Corp Sputtering target of ferromagnetic material with low generation of particles
JP2012117147A (en) * 2010-11-12 2012-06-21 Jx Nippon Mining & Metals Corp Sputtering target with remained cobalt oxide
WO2012086388A1 (en) * 2010-12-22 2012-06-28 Jx日鉱日石金属株式会社 Sintered body sputtering target

Also Published As

Publication number Publication date
JP5801496B2 (en) 2015-10-28
TW201443261A (en) 2014-11-16
TWI608113B (en) 2017-12-11
SG11201501365WA (en) 2015-05-28
JPWO2014141737A1 (en) 2017-02-16
WO2014141737A1 (en) 2014-09-18

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