MY173452A - Method for growing monocrystalline diamonds - Google Patents

Method for growing monocrystalline diamonds

Info

Publication number
MY173452A
MY173452A MYPI2010004766A MYPI2010004766A MY173452A MY 173452 A MY173452 A MY 173452A MY PI2010004766 A MYPI2010004766 A MY PI2010004766A MY PI2010004766 A MYPI2010004766 A MY PI2010004766A MY 173452 A MY173452 A MY 173452A
Authority
MY
Malaysia
Prior art keywords
diamond
containing gas
nitrogen
vol
growing
Prior art date
Application number
MYPI2010004766A
Inventor
Shanker Misra Devi
Original Assignee
Indian Inst Technology Bombay
Iia Tech Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Indian Inst Technology Bombay, Iia Tech Pte Ltd filed Critical Indian Inst Technology Bombay
Publication of MY173452A publication Critical patent/MY173452A/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A method of forming mono-crystalline diamond by chemical vapour deposition, the method comprising the steps of: a) providing at least one diamond seed; b) exposing the seed to conditions for growing diamond by chemical vapour deposition, including supplying reaction gases that include a carbon-containing gas and hydrogen for growing diamond and include a nitrogen-containing gas; and c) controlling the quantity of nitrogen-containing gas relative to other gases in the reaction gases such that diamond is caused to grow by step-growth with defect free steps without inclusions. The nitrogen is present in the range of 0.0001 to 0.02 vol %. Diborane can also be present in a range of from 0.00002 to 0.002 vol %. The carbon-containing gas can be methane.
MYPI2010004766A 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds MY173452A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
SG200804637-7A SG157973A1 (en) 2008-06-18 2008-06-18 Method for growing monocrystalline diamonds

Publications (1)

Publication Number Publication Date
MY173452A true MY173452A (en) 2020-01-25

Family

ID=41434313

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2010004766A MY173452A (en) 2008-06-18 2009-06-18 Method for growing monocrystalline diamonds

Country Status (10)

Country Link
US (1) US8992877B2 (en)
EP (1) EP2262920B1 (en)
JP (1) JP2011524847A (en)
AU (1) AU2009260912B2 (en)
EA (1) EA201001601A1 (en)
IL (1) IL208829A0 (en)
MY (1) MY173452A (en)
NZ (1) NZ588375A (en)
SG (1) SG157973A1 (en)
WO (1) WO2009154577A1 (en)

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JP5431500B2 (en) 2008-12-29 2014-03-05 カズ ヨーロッパ エスエー Probe cover for medical thermometer with matching mechanism
EP2431327A4 (en) * 2009-04-28 2014-04-30 Xi Chu Method and apparatus for producing large particle diamond
JP2011219285A (en) * 2010-04-06 2011-11-04 Kobe Steel Ltd Method for manufacturing diamond flake and material with strengthened heat transfer containing diamond flake
US9783885B2 (en) 2010-08-11 2017-10-10 Unit Cell Diamond Llc Methods for producing diamond mass and apparatus therefor
US10258959B2 (en) 2010-08-11 2019-04-16 Unit Cell Diamond Llc Methods of producing heterodiamond and apparatus therefor
SG179318A1 (en) 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
CN103294439B (en) * 2013-06-28 2016-03-02 华为技术有限公司 A kind of image updating method, system and device
CA2953990C (en) * 2014-05-28 2019-03-05 Unit Cell Diamond Llc Diamond unit cell and diamond mass by combinatorial synthesis
SG10201505413VA (en) 2015-01-14 2016-08-30 Iia Technologies Pte Ltd Electronic device grade single crystal diamonds and method of producing the same
TW201641420A (en) * 2015-03-09 2016-12-01 二A科技有限公司 Monocrystalline diamonds and methods of growing the same
CN107305185A (en) * 2016-04-25 2017-10-31 潘栋雄 Method for distinguishing natural diamond from synthetic diamond by using Raman characteristic peak of third-order spectrum
TWI706061B (en) * 2017-04-26 2020-10-01 新加坡商二A 科技有限公司 Large single crystal diamond and a method of producing the same
US11469077B2 (en) 2018-04-24 2022-10-11 FD3M, Inc. Microwave plasma chemical vapor deposition device and application thereof
GB201904435D0 (en) 2019-03-29 2019-05-15 Element Six Tech Ltd Single crystal synthetic diamond material
CN114318529B (en) * 2021-11-26 2023-12-12 航天科工(长沙)新材料研究院有限公司 Diamond and synthesis process thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR900008505B1 (en) * 1987-02-24 1990-11-24 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Microwave Enhanced CVD Method for Carbon Precipitation
US5443032A (en) * 1992-06-08 1995-08-22 Air Products And Chemicals, Inc. Method for the manufacture of large single crystals
JP3374866B2 (en) * 1993-08-30 2003-02-10 住友電気工業株式会社 Semiconductor diamond and method of forming the same
JP3484749B2 (en) * 1994-04-04 2004-01-06 住友電気工業株式会社 Diamond synthesis method
US6582513B1 (en) * 1998-05-15 2003-06-24 Apollo Diamond, Inc. System and method for producing synthetic diamond
GB0227261D0 (en) * 2002-11-21 2002-12-31 Element Six Ltd Optical quality diamond material
WO2005061400A1 (en) * 2003-12-12 2005-07-07 Element Six Limited Method of incorporating a mark in cvd diamond
KR20080044206A (en) * 2005-05-25 2008-05-20 카네기 인스티튜션 오브 워싱턴 Colorless single-crystal cvd diamond at rapid growth rate
AU2006260656A1 (en) * 2005-06-22 2006-12-28 Element Six Limited High colour diamond layer
SG179318A1 (en) * 2010-09-27 2012-04-27 Gemesis Company S Pte Ltd Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system

Also Published As

Publication number Publication date
EP2262920B1 (en) 2016-10-19
WO2009154577A1 (en) 2009-12-23
EA201001601A1 (en) 2011-10-31
AU2009260912B2 (en) 2014-02-13
IL208829A0 (en) 2011-01-31
EP2262920A1 (en) 2010-12-22
SG157973A1 (en) 2010-01-29
JP2011524847A (en) 2011-09-08
AU2009260912A1 (en) 2009-12-23
EP2262920A4 (en) 2014-03-05
NZ588375A (en) 2012-08-31
US8992877B2 (en) 2015-03-31
US20110014112A1 (en) 2011-01-20

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