MY180765A - Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors - Google Patents

Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors

Info

Publication number
MY180765A
MY180765A MYPI2012002621A MYPI2012002621A MY180765A MY 180765 A MY180765 A MY 180765A MY PI2012002621 A MYPI2012002621 A MY PI2012002621A MY PI2012002621 A MYPI2012002621 A MY PI2012002621A MY 180765 A MY180765 A MY 180765A
Authority
MY
Malaysia
Prior art keywords
oxide layer
trench
semiconductor substrate
field effect
semiconductor field
Prior art date
Application number
MYPI2012002621A
Inventor
Zakaria Anifah
Hezri Abu Bakar Mohd
Arifin Fadzilah
Hilmy Azuan Hamzah Mohd
Original Assignee
Mimos Berhad
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mimos Berhad filed Critical Mimos Berhad
Priority to MYPI2012002621A priority Critical patent/MY180765A/en
Priority to PCT/MY2013/000101 priority patent/WO2013187751A1/en
Publication of MY180765A publication Critical patent/MY180765A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H10D30/0297—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs using recessing of the gate electrodes, e.g. to form trench gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates

Landscapes

  • Drying Of Semiconductors (AREA)
  • Weting (AREA)
  • Element Separation (AREA)

Abstract

A method of fabrication of an oxide layer at the bottom of a trench in a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) is provided. The method includes deposition of a pad oxide layer on a semiconductor substrate of the MOSFET (102); etching the pad oxide layer and the semiconductor substrate to form a trench in the semiconductor substrate(104); depositing a silicone oxide layer to fill the trench in the semiconductor substrate (108); etching the silicone oxide layer to remove the silicone oxide layer from a plurality of sidewalls of the trench (110); coating the semiconductor substrate and silicone oxide layer with a photoresist to protect them of etching (112); etching the photoresist and the silicone oxide layer until surface of the semiconductor substrate is reached (114); and removing the photoresist from inside the trench to obtain a thick bottom oxide (TBO) layer in the trench.
MYPI2012002621A 2012-06-11 2012-06-11 Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors MY180765A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
MYPI2012002621A MY180765A (en) 2012-06-11 2012-06-11 Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors
PCT/MY2013/000101 WO2013187751A1 (en) 2012-06-11 2013-05-27 Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MYPI2012002621A MY180765A (en) 2012-06-11 2012-06-11 Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors

Publications (1)

Publication Number Publication Date
MY180765A true MY180765A (en) 2020-12-08

Family

ID=48953419

Family Applications (1)

Application Number Title Priority Date Filing Date
MYPI2012002621A MY180765A (en) 2012-06-11 2012-06-11 Fabrication method of thick bottom oxide in deep trench of metal oxide semiconductor field effect transistors

Country Status (2)

Country Link
MY (1) MY180765A (en)
WO (1) WO2013187751A1 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6596653B2 (en) * 2001-05-11 2003-07-22 Applied Materials, Inc. Hydrogen assisted undoped silicon oxide deposition process for HDP-CVD
CN1812127A (en) * 2004-12-14 2006-08-02 松下电器产业株式会社 Vertical trench gate transistor semiconductor device and method for fabricating the same
JP5222466B2 (en) * 2006-08-09 2013-06-26 ルネサスエレクトロニクス株式会社 Semiconductor device and manufacturing method thereof
EP2070108A4 (en) * 2006-09-27 2010-12-01 Maxpower Semiconductor Inc MOS FIELD EFFECT TRANSISTOR HAVING A REINFORCED FIELD PLATE

Also Published As

Publication number Publication date
WO2013187751A1 (en) 2013-12-19

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