MY188570A - Method for growth of carbonization layer by acetylene reaction in silicon substrates fabrication - Google Patents
Method for growth of carbonization layer by acetylene reaction in silicon substrates fabricationInfo
- Publication number
- MY188570A MY188570A MYPI20095532A MYPI20095532A MY188570A MY 188570 A MY188570 A MY 188570A MY PI20095532 A MYPI20095532 A MY PI20095532A MY PI20095532 A MYPI20095532 A MY PI20095532A MY 188570 A MY188570 A MY 188570A
- Authority
- MY
- Malaysia
- Prior art keywords
- growth
- carbonization
- silicon substrates
- acetylene
- gas
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 5
- 229910052710 silicon Inorganic materials 0.000 title abstract 5
- 239000010703 silicon Substances 0.000 title abstract 5
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 title abstract 4
- 238000003763 carbonization Methods 0.000 title abstract 4
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000007789 gas Substances 0.000 abstract 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000005238 degreasing Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
Abstract
A method for growth of carbonization layer by acetylene reaction in silicon substrates fabrication comprising degreasing at least a portion of silicon substrate, rinsing the silicon substrate in ozonated solution, evacuating pressure of a growth chamber, heating the silicon substrate on a carbon heater, supplying source gas and hydrogen gas into the growth chamber characterized in that the source gas is selected from the group of acetylene gas, and controlling the substrate temperature for carbonization, wherein characterized in that the carbonization process is carried out at a temperature of 1100?C under a pressure of 39.9 Pa and the acetylene gas is supplied into the growth chamber at the rate of 2 seem.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI20095532A MY188570A (en) | 2009-12-23 | 2009-12-23 | Method for growth of carbonization layer by acetylene reaction in silicon substrates fabrication |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI20095532A MY188570A (en) | 2009-12-23 | 2009-12-23 | Method for growth of carbonization layer by acetylene reaction in silicon substrates fabrication |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| MY188570A true MY188570A (en) | 2021-12-22 |
Family
ID=82786139
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MYPI20095532A MY188570A (en) | 2009-12-23 | 2009-12-23 | Method for growth of carbonization layer by acetylene reaction in silicon substrates fabrication |
Country Status (1)
| Country | Link |
|---|---|
| MY (1) | MY188570A (en) |
-
2009
- 2009-12-23 MY MYPI20095532A patent/MY188570A/en unknown
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