MY198456A - Hybrid Emitter All Back Contact Solar Cell - Google Patents

Hybrid Emitter All Back Contact Solar Cell

Info

Publication number
MY198456A
MY198456A MYPI2019000026A MYPI2019000026A MY198456A MY 198456 A MY198456 A MY 198456A MY PI2019000026 A MYPI2019000026 A MY PI2019000026A MY PI2019000026 A MYPI2019000026 A MY PI2019000026A MY 198456 A MY198456 A MY 198456A
Authority
MY
Malaysia
Prior art keywords
solar cell
emitter
back contact
contact solar
single crystalline
Prior art date
Application number
MYPI2019000026A
Inventor
Loscutoff Paul
Rim Seung
Original Assignee
Maxeon Solar Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=50929539&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=MY198456(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Maxeon Solar Pte Ltd filed Critical Maxeon Solar Pte Ltd
Publication of MY198456A publication Critical patent/MY198456A/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • H10F77/227—Arrangements for electrodes of back-contact photovoltaic cells for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/122—Active materials comprising only Group IV materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Sustainable Development (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)

Abstract

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer (102) formed on a backside surface of a single crystalline silicon substrate (101). One emitter (103) of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer (102). The other emitter (108) of the solar cell is formed in the single crystalline silicon substrate (101) and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts (107) to connect to corresponding emitters (108, 103). (Fig. 8)
MYPI2019000026A 2012-12-19 2019-01-09 Hybrid Emitter All Back Contact Solar Cell MY198456A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/720,721 US9312406B2 (en) 2012-12-19 2012-12-19 Hybrid emitter all back contact solar cell

Publications (1)

Publication Number Publication Date
MY198456A true MY198456A (en) 2023-08-30

Family

ID=50929539

Family Applications (2)

Application Number Title Priority Date Filing Date
MYPI2015001506A MY172208A (en) 2012-12-19 2013-12-17 Hybrid emitter all back contact solar cell
MYPI2019000026A MY198456A (en) 2012-12-19 2019-01-09 Hybrid Emitter All Back Contact Solar Cell

Family Applications Before (1)

Application Number Title Priority Date Filing Date
MYPI2015001506A MY172208A (en) 2012-12-19 2013-12-17 Hybrid emitter all back contact solar cell

Country Status (11)

Country Link
US (2) US9312406B2 (en)
EP (1) EP2936570B1 (en)
JP (1) JP6352940B2 (en)
KR (2) KR102360479B1 (en)
CN (2) CN107068778B (en)
AU (1) AU2013362916B2 (en)
MX (1) MX347995B (en)
MY (2) MY172208A (en)
SG (2) SG11201504664RA (en)
TW (1) TWI587529B (en)
WO (1) WO2014100004A1 (en)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
NL2013722B1 (en) * 2014-10-31 2016-10-04 Univ Delft Tech Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions.
US9520507B2 (en) * 2014-12-22 2016-12-13 Sunpower Corporation Solar cells with improved lifetime, passivation and/or efficiency
WO2018021952A1 (en) 2016-07-29 2018-02-01 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
SE540184C2 (en) 2016-07-29 2018-04-24 Exeger Operations Ab A light absorbing layer and a photovoltaic device including a light absorbing layer
WO2019011681A1 (en) 2017-07-12 2019-01-17 Exeger Operations Ab A photovoltaic device having a light absorbing layer including a plurality of grains of a doped semiconducting material
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10629758B2 (en) 2016-09-30 2020-04-21 Sunpower Corporation Solar cells with differentiated P-type and N-type region architectures
TWI580058B (en) 2016-10-26 2017-04-21 財團法人工業技術研究院 Solar battery
NL2017872B1 (en) 2016-11-25 2018-06-08 Stichting Energieonderzoek Centrum Nederland Photovoltaic cell with passivating contact
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
NL2019634B1 (en) 2017-09-27 2019-04-03 Univ Delft Tech Solar cells with transparent contacts based on poly-silicon-oxide
WO2019206679A1 (en) * 2018-04-24 2019-10-31 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Passivated layer stack for a light harvesting device
CA3097074A1 (en) 2018-05-16 2019-11-21 Exeger Operations Ab A photovoltaic device
EP3627527A1 (en) 2018-09-20 2020-03-25 Exeger Operations AB Photovoltaic device for powering an external device and a method for producing the photovoltaic device
US11824126B2 (en) * 2019-12-10 2023-11-21 Maxeon Solar Pte. Ltd. Aligned metallization for solar cells
EP3982421A1 (en) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell
DE102020132245A1 (en) 2020-12-04 2022-06-09 EnPV GmbH Backside contacted solar cell and production of such
CN112397596A (en) * 2020-12-28 2021-02-23 东方日升新能源股份有限公司 Low-cost high-efficiency solar cell and preparation method thereof
CN120547943A (en) 2021-06-30 2025-08-26 晶科能源股份有限公司 Solar cells and photovoltaic modules
CN113284961B (en) * 2021-07-22 2021-09-28 浙江爱旭太阳能科技有限公司 Solar cell and passivation contact structure thereof, cell module and photovoltaic system
US12211950B2 (en) 2021-07-22 2025-01-28 Solarlab Aiko Europe Gmbh Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
DE102022129955A1 (en) 2022-11-11 2024-05-16 EnPV GmbH Back-contacted solar cell with aluminum metallization and manufacturing process
CN116093190B (en) * 2023-02-10 2024-09-20 天合光能股份有限公司 Back contact solar cell and method for preparing the same
CN116314361B (en) * 2023-03-31 2025-06-13 天合光能股份有限公司 Solar cell and method for preparing solar cell
CN121420657A (en) * 2023-04-30 2026-01-27 迈可晟太阳能有限公司 Solar cells with cell architecture designed to reduce carrier recombination
DE102023130440B3 (en) 2023-11-03 2025-03-06 EnPV GmbH Back-side contacted solar cell and method for producing a back-side contacted solar cell

Family Cites Families (65)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3961997A (en) 1975-05-12 1976-06-08 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Fabrication of polycrystalline solar cells on low-cost substrates
US4427839A (en) 1981-11-09 1984-01-24 General Electric Company Faceted low absorptance solar cell
US4665277A (en) 1986-03-11 1987-05-12 The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration Floating emitter solar cell
US4927770A (en) 1988-11-14 1990-05-22 Electric Power Research Inst. Corp. Of District Of Columbia Method of fabricating back surface point contact solar cells
US5217539A (en) 1991-09-05 1993-06-08 The Boeing Company III-V solar cells and doping processes
US5053083A (en) 1989-05-08 1991-10-01 The Board Of Trustees Of The Leland Stanford Junior University Bilevel contact solar cells
US5479018A (en) 1989-05-08 1995-12-26 Westinghouse Electric Corp. Back surface illuminated infrared detector
US5030295A (en) 1990-02-12 1991-07-09 Electric Power Research Institut Radiation resistant passivation of silicon solar cells
US5057439A (en) 1990-02-12 1991-10-15 Electric Power Research Institute Method of fabricating polysilicon emitters for solar cells
US5164019A (en) 1991-07-31 1992-11-17 Sunpower Corporation Monolithic series-connected solar cells having improved cell isolation and method of making same
US5356488A (en) 1991-12-27 1994-10-18 Rudolf Hezel Solar cell and method for its manufacture
US5266125A (en) 1992-05-12 1993-11-30 Astropower, Inc. Interconnected silicon film solar cell array
US5369291A (en) 1993-03-29 1994-11-29 Sunpower Corporation Voltage controlled thyristor
US5360990A (en) 1993-03-29 1994-11-01 Sunpower Corporation P/N junction device having porous emitter
JPH0786271A (en) 1993-09-17 1995-03-31 Fujitsu Ltd Method for producing silicon oxide film
US5641362A (en) 1995-11-22 1997-06-24 Ebara Solar, Inc. Structure and fabrication process for an aluminum alloy junction self-aligned back contact silicon solar cell
US5620904A (en) 1996-03-15 1997-04-15 Evergreen Solar, Inc. Methods for forming wraparound electrical contacts on solar cells
US6552414B1 (en) 1996-12-24 2003-04-22 Imec Vzw Semiconductor device with selectively diffused regions
US6262359B1 (en) 1999-03-17 2001-07-17 Ebara Solar, Inc. Aluminum alloy back junction solar cell and a process for fabrication thereof
US6423568B1 (en) 1999-12-30 2002-07-23 Sunpower Corporation Method of fabricating a silicon solar cell
US6274402B1 (en) 1999-12-30 2001-08-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6387726B1 (en) 1999-12-30 2002-05-14 Sunpower Corporation Method of fabricating a silicon solar cell
US6337283B1 (en) 1999-12-30 2002-01-08 Sunpower Corporation Method of fabricating a silicon solar cell
US6313395B1 (en) 2000-04-24 2001-11-06 Sunpower Corporation Interconnect structure for solar cells and method of making same
US6333457B1 (en) 2000-08-29 2001-12-25 Sunpower Corporation Edge passivated silicon solar/photo cell and method of manufacture
JP3490964B2 (en) 2000-09-05 2004-01-26 三洋電機株式会社 Photovoltaic device
DE10045249A1 (en) 2000-09-13 2002-04-04 Siemens Ag Photovoltaic component and method for producing the component
CA2370731A1 (en) 2001-02-07 2002-08-07 Ebara Corporation Solar cell and method of manufacturing same
US6524880B2 (en) 2001-04-23 2003-02-25 Samsung Sdi Co., Ltd. Solar cell and method for fabricating the same
WO2003047005A2 (en) 2001-11-26 2003-06-05 Shell Solar Gmbh Manufacturing a solar cell with backside contacts
US7388147B2 (en) 2003-04-10 2008-06-17 Sunpower Corporation Metal contact structure for solar cell and method of manufacture
US6998288B1 (en) 2003-10-03 2006-02-14 Sunpower Corporation Use of doped silicon dioxide in the fabrication of solar cells
US20050268963A1 (en) 2004-02-24 2005-12-08 David Jordan Process for manufacturing photovoltaic cells
US7838868B2 (en) 2005-01-20 2010-11-23 Nanosolar, Inc. Optoelectronic architecture having compound conducting substrate
US20060130891A1 (en) 2004-10-29 2006-06-22 Carlson David E Back-contact photovoltaic cells
TW200633240A (en) 2004-11-10 2006-09-16 Daystar Technologies Inc Method and apparatus for forming a thin-film solar cell using a continuous process
EP1693903B1 (en) 2005-02-18 2011-05-18 Clean Venture 21 Corporation Array of spherical solar cells and its method of fabrication
US20070023081A1 (en) 2005-07-28 2007-02-01 General Electric Company Compositionally-graded photovoltaic device and fabrication method, and related articles
US7468485B1 (en) 2005-08-11 2008-12-23 Sunpower Corporation Back side contact solar cell with doped polysilicon regions
US7339728B2 (en) 2005-10-11 2008-03-04 Cardinal Cg Company Low-emissivity coatings having high visible transmission and low solar heat gain coefficient
ES2357665T3 (en) 2005-11-28 2011-04-28 Mitsubishi Electric Corporation SOLAR BATTERY CELL AND ITS MANUFACTURING PROCEDURE.
US7737357B2 (en) * 2006-05-04 2010-06-15 Sunpower Corporation Solar cell having doped semiconductor heterojunction contacts
US7928317B2 (en) 2006-06-05 2011-04-19 Translucent, Inc. Thin film solar cell
KR100880946B1 (en) 2006-07-03 2009-02-04 엘지전자 주식회사 Solar cell and manufacturing method
JP2009152222A (en) * 2006-10-27 2009-07-09 Kyocera Corp Method for manufacturing solar cell element
US7705237B2 (en) * 2006-11-27 2010-04-27 Sunpower Corporation Solar cell having silicon nano-particle emitter
US20080173347A1 (en) 2007-01-23 2008-07-24 General Electric Company Method And Apparatus For A Semiconductor Structure
US9287430B1 (en) * 2007-11-01 2016-03-15 Sandia Corporation Photovoltaic solar concentrator
US8329503B1 (en) * 2007-11-01 2012-12-11 Sandia Corporation Photovoltaic solar concentrator
US20090159111A1 (en) 2007-12-21 2009-06-25 The Woodside Group Pte. Ltd Photovoltaic device having a textured metal silicide layer
US8222516B2 (en) 2008-02-20 2012-07-17 Sunpower Corporation Front contact solar cell with formed emitter
TW201019482A (en) * 2008-04-09 2010-05-16 Applied Materials Inc Simplified back contact for polysilicon emitter solar cells
US8207444B2 (en) 2008-07-01 2012-06-26 Sunpower Corporation Front contact solar cell with formed electrically conducting layers on the front side and backside
DE102008060404A1 (en) * 2008-07-30 2010-02-11 Helmholtz-Zentrum Berlin Für Materialien Und Energie Gmbh Single-sided contacted thin-film solar module with an inner contact layer
US8242354B2 (en) * 2008-12-04 2012-08-14 Sunpower Corporation Backside contact solar cell with formed polysilicon doped regions
CN101777603B (en) * 2009-01-08 2012-03-07 北京北方微电子基地设备工艺研究中心有限责任公司 Method for manufacturing back contact solar energy batteries
JP2013506272A (en) * 2009-09-20 2013-02-21 インターモレキュラー，インコーポレーテッド Construction method for crystalline silicon solar cells used in combinatorial screening
TWI523246B (en) * 2009-09-21 2016-02-21 納克公司 矽 ink for thin film solar cell formation, corresponding method and solar cell structure
US20110132444A1 (en) 2010-01-08 2011-06-09 Meier Daniel L Solar cell including sputtered reflective layer and method of manufacture thereof
EP2541617B1 (en) 2010-02-26 2017-03-22 Panasonic Intellectual Property Management Co., Ltd. Solar cell and method for manufacturing solar cell
US8071418B2 (en) 2010-06-03 2011-12-06 Suniva, Inc. Selective emitter solar cells formed by a hybrid diffusion and ion implantation process
US8492253B2 (en) 2010-12-02 2013-07-23 Sunpower Corporation Method of forming contacts for a back-contact solar cell
JP5891382B2 (en) 2011-03-25 2016-03-23 パナソニックＩｐマネジメント株式会社 Method for manufacturing photoelectric conversion element
KR20120129264A (en) * 2011-05-19 2012-11-28 삼성디스플레이 주식회사 Solar cell and method of manufacturing the same
CN102856328B (en) * 2012-10-10 2015-06-10 友达光电股份有限公司 Solar cell and manufacturing method thereof

Also Published As

Publication number Publication date
WO2014100004A1 (en) 2014-06-26
JP2016501452A (en) 2016-01-18
SG11201504664RA (en) 2015-07-30
US9564551B2 (en) 2017-02-07
US9312406B2 (en) 2016-04-12
MX2015007998A (en) 2016-02-19
MX347995B (en) 2017-05-22
CN107068778A (en) 2017-08-18
EP2936570B1 (en) 2017-08-16
KR20150097647A (en) 2015-08-26
EP2936570A1 (en) 2015-10-28
AU2013362916B2 (en) 2017-06-22
US20140166095A1 (en) 2014-06-19
TWI587529B (en) 2017-06-11
CN107068778B (en) 2020-08-14
CN104885232A (en) 2015-09-02
EP2936570A4 (en) 2016-01-27
CN104885232B (en) 2017-03-15
KR102360479B1 (en) 2022-02-14
US20160204288A1 (en) 2016-07-14
KR20210046826A (en) 2021-04-28
JP6352940B2 (en) 2018-07-04
AU2013362916A1 (en) 2015-06-18
SG10201709897UA (en) 2017-12-28
MY172208A (en) 2019-11-15
TW201432923A (en) 2014-08-16

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