NL1015367C2 - Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan. - Google Patents

Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan. Download PDF

Info

Publication number
NL1015367C2
NL1015367C2 NL1015367A NL1015367A NL1015367C2 NL 1015367 C2 NL1015367 C2 NL 1015367C2 NL 1015367 A NL1015367 A NL 1015367A NL 1015367 A NL1015367 A NL 1015367A NL 1015367 C2 NL1015367 C2 NL 1015367C2
Authority
NL
Netherlands
Prior art keywords
coating composition
amine
amine anti
pollution
pattern
Prior art date
Application number
NL1015367A
Other languages
English (en)
Dutch (nl)
Other versions
NL1015367A1 (nl
Inventor
Jae Chang Jung
Geun Su Lee
Cha Won Koh
Min Ho Jung
Ki Ho Baik
Keun Kyu Kong
Hyeong Soo Kim
Jin Soo Kim
Sung Eun Hong
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Publication of NL1015367A1 publication Critical patent/NL1015367A1/xx
Application granted granted Critical
Publication of NL1015367C2 publication Critical patent/NL1015367C2/nl

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Paints Or Removers (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
NL1015367A 1999-06-03 2000-05-31 Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan. NL1015367C2 (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-1999-0020538A KR100401116B1 (ko) 1999-06-03 1999-06-03 아민오염방지 물질 및 이를 이용한 미세패턴 형성방법
KR19990020538 1999-06-03

Publications (2)

Publication Number Publication Date
NL1015367A1 NL1015367A1 (nl) 2000-12-06
NL1015367C2 true NL1015367C2 (nl) 2001-05-17

Family

ID=19589910

Family Applications (1)

Application Number Title Priority Date Filing Date
NL1015367A NL1015367C2 (nl) 1999-06-03 2000-05-31 Deklaagsamenstelling voor een fotobeschermlaag en werkwijze voor het vormen van een fijn patroon door het gebruik ervan.

Country Status (9)

Country Link
JP (1) JP2001022080A (it)
KR (1) KR100401116B1 (it)
CN (1) CN1215375C (it)
DE (1) DE10027587A1 (it)
FR (1) FR2794538B1 (it)
GB (1) GB2352825B (it)
IT (1) IT1320493B1 (it)
NL (1) NL1015367C2 (it)
TW (1) TWI266958B (it)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100537181B1 (ko) * 1999-12-30 2005-12-16 주식회사 하이닉스반도체 노광후 현상 지연에 의한 패턴 불량을 방지할 수 있는포토레지스트 패턴 형성 방법
KR100390991B1 (ko) * 2001-05-29 2003-07-12 주식회사 하이닉스반도체 반도체소자의 감광막패턴 형성방법
KR100390998B1 (ko) * 2001-06-26 2003-07-12 주식회사 하이닉스반도체 반도체소자의 감광막패턴 형성방법
JP3476082B2 (ja) * 2001-11-05 2003-12-10 東京応化工業株式会社 パターン微細化用被覆形成剤およびそれを用いた微細パターンの形成方法
RU2222847C1 (ru) * 2002-10-21 2004-01-27 Государственное предприятие "Центр технологий микроэлектроники" Наносенсорная система
KR100642416B1 (ko) 2004-08-31 2006-11-03 주식회사 하이닉스반도체 상부 반사방지막 조성물 및 이를 이용한 반도체 소자의패턴 형성 방법
CN1786830A (zh) * 2004-12-09 2006-06-14 三洋电机株式会社 抗蚀剂图案形成方法
US8168367B2 (en) 2008-07-11 2012-05-01 Shin-Etsu Chemical Co., Ltd. Resist composition and patterning process
KR102200511B1 (ko) * 2013-01-24 2021-01-11 닛산 가가쿠 가부시키가이샤 리소그래피용 레지스트 상층막 형성 조성물 및 이것을 이용한 반도체장치의 제조방법
KR101756253B1 (ko) * 2013-01-31 2017-07-10 후지필름 가부시키가이샤 패턴형성방법, 이들을 사용한 전자 디바이스의 제조방법, 및 전자 디바이스
KR102655599B1 (ko) * 2023-07-17 2024-04-08 와이씨켐 주식회사 반도체 패턴 쓰러짐 방지용 코팅 조성물 및 이를 이용하여 코팅된 패턴

Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895949A (en) * 1972-07-24 1975-07-22 Asahi Chemical Ind Photosensitive element comprising photopolymerizable layer and protective layer
EP0275147A2 (en) * 1987-01-12 1988-07-20 E.I. du Pont de Nemours and Company Improvements in or relating to printing plate precursors
EP0488372A1 (en) * 1990-11-30 1992-06-03 Matsushita Electric Industrial Co., Ltd. Fine pattern forming process
DE4415113A1 (de) * 1993-04-30 1994-11-24 Toyo Boseki Mehrschichtiges Photopolymerelement
EP0703499A1 (en) * 1994-09-23 1996-03-27 Minnesota Mining And Manufacturing Company Top coats for shoot and run printing plates
JPH08305032A (ja) * 1995-05-01 1996-11-22 Hoechst Ind Kk 反射防止コーティング用組成物
EP0751433A2 (en) * 1995-06-29 1997-01-02 Nippon Zeon Co., Ltd. Release composition and photosensitive rubber plate with layer of the same
US5624789A (en) * 1992-07-10 1997-04-29 Hoechst Celanese Corporation Metal ion reduction in top anti-reflective coatings for photoresisis
EP0803776A2 (en) * 1996-04-25 1997-10-29 Hoechst Japan Limited Composition for anti-reflection coating
US5783362A (en) * 1994-04-27 1998-07-21 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition
JPH10261574A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3652273A (en) * 1967-09-11 1972-03-28 Ibm Process using polyvinyl butral topcoat on photoresist layer
DE3715790A1 (de) * 1987-05-12 1988-11-24 Hoechst Ag Strahlungsempfindliches aufzeichnungsmaterial
WO1992005474A1 (en) * 1990-09-18 1992-04-02 International Business Machines Corporation Top coat for acid catalyzed resists
DE4117127A1 (de) * 1991-05-25 1992-11-26 Basf Ag Lichtempfindliche aufzeichnungselemente, verfahren zu ihrer herstellung und weiterverarbeitung sowie geraete fuer die durchfuehrung dieser verfahren

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3895949A (en) * 1972-07-24 1975-07-22 Asahi Chemical Ind Photosensitive element comprising photopolymerizable layer and protective layer
EP0275147A2 (en) * 1987-01-12 1988-07-20 E.I. du Pont de Nemours and Company Improvements in or relating to printing plate precursors
EP0488372A1 (en) * 1990-11-30 1992-06-03 Matsushita Electric Industrial Co., Ltd. Fine pattern forming process
US5624789A (en) * 1992-07-10 1997-04-29 Hoechst Celanese Corporation Metal ion reduction in top anti-reflective coatings for photoresisis
DE4415113A1 (de) * 1993-04-30 1994-11-24 Toyo Boseki Mehrschichtiges Photopolymerelement
US5783362A (en) * 1994-04-27 1998-07-21 Tokyo Ohka Kogyo Co., Ltd. Liquid coating composition for use in forming photoresist coating films and a photoresist material using said composition
EP0703499A1 (en) * 1994-09-23 1996-03-27 Minnesota Mining And Manufacturing Company Top coats for shoot and run printing plates
JPH08305032A (ja) * 1995-05-01 1996-11-22 Hoechst Ind Kk 反射防止コーティング用組成物
EP0751433A2 (en) * 1995-06-29 1997-01-02 Nippon Zeon Co., Ltd. Release composition and photosensitive rubber plate with layer of the same
EP0803776A2 (en) * 1996-04-25 1997-10-29 Hoechst Japan Limited Composition for anti-reflection coating
JPH10261574A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 半導体装置の製造方法
US5985519A (en) * 1997-03-19 1999-11-16 Fujitsu Limited Method of manufacturing semiconductor device using top antireflection film

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
PATENT ABSTRACTS OF JAPAN vol. 1997, no. 03 31 March 1997 (1997-03-31) *

Also Published As

Publication number Publication date
CN1276541A (zh) 2000-12-13
IT1320493B1 (it) 2003-12-10
CN1215375C (zh) 2005-08-17
ITTO20000510A1 (it) 2001-12-01
TWI266958B (en) 2006-11-21
KR20010001380A (ko) 2001-01-05
ITTO20000510A0 (it) 2000-06-01
GB0012727D0 (en) 2000-07-19
FR2794538B1 (fr) 2004-08-20
GB2352825A (en) 2001-02-07
JP2001022080A (ja) 2001-01-26
DE10027587A1 (de) 2000-12-21
FR2794538A1 (fr) 2000-12-08
KR100401116B1 (ko) 2003-10-10
NL1015367A1 (nl) 2000-12-06
GB2352825B (en) 2003-12-17

Similar Documents

Publication Publication Date Title
KR102064809B1 (ko) 포토레지스트 조성물 및 포토리소그래픽 패턴 형성 방법
JP6613020B2 (ja) カルバメート成分を含むフォトレジスト
KR102012201B1 (ko) 포토레지스트에서 사용하기 위한 열산 발생제
KR101979612B1 (ko) 염기-반응성 성분을 포함하는 조성물 및 포토리소그래피 공정
KR20110087238A (ko) 질소-함유 화합물을 포함하는 포토레지스트
KR102630503B1 (ko) 포토레지스트 조성물 및 패턴 형성 방법
KR20080104392A (ko) 노르보르넨-타입 폴리머, 이들의 조성물 및 그러한 조성물을 사용하는 리소그라피 프로세스
US7329477B2 (en) Process for forming a fine pattern using a top-coating composition for a photoresist and product formed by same
KR101952586B1 (ko) 광염기 발생제 및 이것을 포함하는 포토레지스트 조성물
JP2023159129A (ja) フォトレジスト組成物及びパターン形成方法
KR102314297B1 (ko) 포토레지스트 탑코트 조성물 및 포토레지스트 조성물의 처리 방법
GB2352825A (en) Top coating composition for photoresist and process for forming fine pattern
KR101701189B1 (ko) 포토리소그래피 방법
CN109154776B (zh) 化学放大型负性光致抗蚀剂组合物
CN110658678B (zh) 光致抗蚀剂面漆组合物及加工光致抗蚀剂组合物的方法
CN100533271C (zh) 光刻胶组合物
KR102672423B1 (ko) 포토레지스트 조성물 및 패턴 형성 방법
KR102880008B1 (ko) 광활성 화합물, 이를 포함하는 포토레지스트 조성물, 및 패턴 형성 방법

Legal Events

Date Code Title Description
AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20010314

PD2B A search report has been drawn up
V1 Lapsed because of non-payment of the annual fee

Effective date: 20131201