NL1017849C2 - Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. - Google Patents
Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. Download PDFInfo
- Publication number
- NL1017849C2 NL1017849C2 NL1017849A NL1017849A NL1017849C2 NL 1017849 C2 NL1017849 C2 NL 1017849C2 NL 1017849 A NL1017849 A NL 1017849A NL 1017849 A NL1017849 A NL 1017849A NL 1017849 C2 NL1017849 C2 NL 1017849C2
- Authority
- NL
- Netherlands
- Prior art keywords
- fluid
- plasma
- substrate
- plasma chamber
- chamber
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 63
- 238000000151 deposition Methods 0.000 title claims abstract description 19
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 10
- 239000012530 fluid Substances 0.000 claims abstract description 106
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 32
- 239000010703 silicon Substances 0.000 claims abstract description 32
- 238000006243 chemical reaction Methods 0.000 claims description 33
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 238000004891 communication Methods 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 5
- 239000011737 fluorine Substances 0.000 claims description 5
- 229910052731 fluorine Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 5
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 150000002431 hydrogen Chemical class 0.000 claims description 4
- 229910052756 noble gas Inorganic materials 0.000 claims description 4
- 229910000077 silane Inorganic materials 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 239000000460 chlorine Substances 0.000 claims description 3
- 229910052801 chlorine Inorganic materials 0.000 claims description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000002019 doping agent Substances 0.000 claims description 2
- 150000002835 noble gases Chemical class 0.000 claims description 2
- 230000000737 periodic effect Effects 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 6
- 210000002381 plasma Anatomy 0.000 description 71
- 210000004027 cell Anatomy 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 4
- 230000004907 flux Effects 0.000 description 4
- 239000004033 plastic Substances 0.000 description 4
- 229920003023 plastic Polymers 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- YZCKVEUIGOORGS-UHFFFAOYSA-N Hydrogen atom Chemical compound [H] YZCKVEUIGOORGS-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000002360 explosive Substances 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 239000008240 homogeneous mixture Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32357—Generation remote from the workpiece, e.g. down-stream
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Analytical Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Silicon Compounds (AREA)
- Laminated Bodies (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (17)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1017849A NL1017849C2 (nl) | 2001-04-16 | 2001-04-16 | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
| EP02722981A EP1381710B1 (de) | 2001-04-16 | 2002-04-12 | Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat |
| CA2442575A CA2442575C (en) | 2001-04-16 | 2002-04-12 | Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |
| RU2003133288/02A RU2258764C1 (ru) | 2001-04-16 | 2002-04-12 | Способ и устройство для осаждения по меньшей мере частично кристаллического кремниевого слоя на подложку |
| AT02722981T ATE420221T1 (de) | 2001-04-16 | 2002-04-12 | Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat |
| US10/473,222 US7160809B2 (en) | 2001-04-16 | 2002-04-12 | Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |
| BR0208601-8A BR0208601A (pt) | 2001-04-16 | 2002-04-12 | Processo e dispositivo para depositar uma camada de silìcio, pelo menos parcialmente cristalina, em um substrato |
| DE60230732T DE60230732D1 (de) | 2001-04-16 | 2002-04-12 | Verfahren und vorrichtung zur abscheidung einer mikrokristallinen siliciumschicht auf einem substrat |
| PT02722981T PT1381710E (pt) | 2001-04-16 | 2002-04-12 | Processo e dispositivo para a deposição de uma camada de silício microcristalino num substrato |
| KR1020037013272A KR100758921B1 (ko) | 2001-04-16 | 2002-04-12 | 기판상에 적어도 부분적인 결정성 실리콘 층을 증착하는 방법 및 장치 |
| ES02722981T ES2321165T3 (es) | 2001-04-16 | 2002-04-12 | Proceso y dispositivo para depositar una capa de silicio cristalina sobre un sustrato. |
| AU2002253725A AU2002253725B2 (en) | 2001-04-16 | 2002-04-12 | Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |
| CNB028082583A CN1279211C (zh) | 2001-04-16 | 2002-04-12 | 在基质上沉积至少部分结晶硅层的方法和设备 |
| PCT/NL2002/000244 WO2002083979A2 (en) | 2001-04-16 | 2002-04-12 | Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |
| MXPA03008426A MXPA03008426A (es) | 2001-04-16 | 2002-04-12 | Proceso y dispositivo para la deposicion de una capa de silicio al menos parcialmente cristalino sobre un substrato. |
| ZA200307301A ZA200307301B (en) | 2001-04-16 | 2003-09-18 | Process and device for the deposition of an least partially crystalline silicium layer on a substrate. |
| CY20091100385T CY1108949T1 (el) | 2001-04-16 | 2009-04-02 | Διαδικασια και συσκευη για την εναποθεση στρωματος μικροκρυσταλλικου πυριτιου σε υποστρωμα |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL1017849A NL1017849C2 (nl) | 2001-04-16 | 2001-04-16 | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
| NL1017849 | 2001-04-16 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL1017849C2 true NL1017849C2 (nl) | 2002-10-30 |
Family
ID=19773241
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL1017849A NL1017849C2 (nl) | 2001-04-16 | 2001-04-16 | Werkwijze en inrichting voor het deponeren van een althans ten dele kristallijne siliciumlaag op een substraat. |
Country Status (17)
| Country | Link |
|---|---|
| US (1) | US7160809B2 (de) |
| EP (1) | EP1381710B1 (de) |
| KR (1) | KR100758921B1 (de) |
| CN (1) | CN1279211C (de) |
| AT (1) | ATE420221T1 (de) |
| AU (1) | AU2002253725B2 (de) |
| BR (1) | BR0208601A (de) |
| CA (1) | CA2442575C (de) |
| CY (1) | CY1108949T1 (de) |
| DE (1) | DE60230732D1 (de) |
| ES (1) | ES2321165T3 (de) |
| MX (1) | MXPA03008426A (de) |
| NL (1) | NL1017849C2 (de) |
| PT (1) | PT1381710E (de) |
| RU (1) | RU2258764C1 (de) |
| WO (1) | WO2002083979A2 (de) |
| ZA (1) | ZA200307301B (de) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7821637B1 (en) | 2007-02-22 | 2010-10-26 | J.A. Woollam Co., Inc. | System for controlling intensity of a beam of electromagnetic radiation and method for investigating materials with low specular reflectance and/or are depolarizing |
| EP2265883A1 (de) * | 2008-04-14 | 2010-12-29 | Hemlock Semiconductor Corporation | Herstellungsvorrichtung zur abscheidung eines materials und elektrode zur verwendung damit |
| EP2141259B1 (de) * | 2008-07-04 | 2018-10-31 | ABB Schweiz AG | Abscheidungsverfahren zur Passivierung von Silizium-Wafern |
| US7927984B2 (en) * | 2008-11-05 | 2011-04-19 | Hemlock Semiconductor Corporation | Silicon production with a fluidized bed reactor utilizing tetrachlorosilane to reduce wall deposition |
| US20120213929A1 (en) * | 2011-02-18 | 2012-08-23 | Tokyo Electron Limited | Method of operating filament assisted chemical vapor deposition system |
| US10011920B2 (en) | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
| KR101923167B1 (ko) * | 2011-04-07 | 2018-11-29 | 피코순 오와이 | 플라즈마 소오스를 갖는 원자층 퇴적 |
| JP6110106B2 (ja) * | 2012-11-13 | 2017-04-05 | Ｊｓｗアフティ株式会社 | 薄膜形成装置 |
| EP4379091A3 (de) | 2012-11-23 | 2024-08-21 | Picosun Oy | Substratladung |
| RU2650381C1 (ru) * | 2016-12-12 | 2018-04-11 | федеральное государственное бюджетное образовательное учреждение высшего образования "Омский государственный университет им. Ф.М. Достоевского" | Способ формирования тонких пленок аморфного кремния |
| RU2733941C2 (ru) * | 2019-04-01 | 2020-10-08 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Кабардино-Балкарский государственный университет им. Х.М. Бербекова" (КБГУ) | Способ изготовления полупроводниковой структуры |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60194065A (ja) * | 1984-11-09 | 1985-10-02 | Hitachi Ltd | 分子線堆積方法 |
| JPS60257130A (ja) * | 1984-06-01 | 1985-12-18 | Res Dev Corp Of Japan | ラジカルビ−ムを用いた薄膜形成方法 |
| EP0297637A1 (de) * | 1987-06-30 | 1989-01-04 | Technische Universiteit Eindhoven | Methode zur Behandlung der Substratoberflächen mit Hilfe von Plasma und Reaktor für die Durchführung dieser Methode |
| US5591492A (en) * | 1986-04-11 | 1997-01-07 | Canon Kabushiki Kaisha | Process for forming and etching a film to effect specific crystal growth from activated species |
| WO2000074932A1 (en) * | 1999-06-03 | 2000-12-14 | The Penn State Research Foundation | Deposited thin film void-column network materials |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2555206B1 (fr) * | 1983-11-22 | 1986-05-09 | Thomson Csf | Procede de depot de silicium amorphe par decomposition thermique a basse temperature et dispositif de mise en oeuvre du procede |
| SU1738872A1 (ru) * | 1986-09-03 | 1992-06-07 | Научно-Исследовательский Институт Приборостроения | Способ получени пленок двуокиси кремни |
| KR100327086B1 (ko) * | 1994-06-15 | 2002-03-06 | 구사마 사부로 | 박막 반도체 장치의 제조방법, 박막 반도체 장치,액정표시장치 및 전자기기 |
| RU2100477C1 (ru) * | 1994-10-18 | 1997-12-27 | Равель Газизович Шарафутдинов | Способ осаждения пленок гидрогенизированного кремния |
| US6152071A (en) * | 1996-12-11 | 2000-11-28 | Canon Kabushiki Kaisha | High-frequency introducing means, plasma treatment apparatus, and plasma treatment method |
-
2001
- 2001-04-16 NL NL1017849A patent/NL1017849C2/nl not_active IP Right Cessation
-
2002
- 2002-04-12 AT AT02722981T patent/ATE420221T1/de active
- 2002-04-12 ES ES02722981T patent/ES2321165T3/es not_active Expired - Lifetime
- 2002-04-12 DE DE60230732T patent/DE60230732D1/de not_active Expired - Lifetime
- 2002-04-12 KR KR1020037013272A patent/KR100758921B1/ko not_active Expired - Fee Related
- 2002-04-12 RU RU2003133288/02A patent/RU2258764C1/ru not_active IP Right Cessation
- 2002-04-12 MX MXPA03008426A patent/MXPA03008426A/es active IP Right Grant
- 2002-04-12 AU AU2002253725A patent/AU2002253725B2/en not_active Ceased
- 2002-04-12 CN CNB028082583A patent/CN1279211C/zh not_active Expired - Fee Related
- 2002-04-12 CA CA2442575A patent/CA2442575C/en not_active Expired - Fee Related
- 2002-04-12 WO PCT/NL2002/000244 patent/WO2002083979A2/en not_active Ceased
- 2002-04-12 EP EP02722981A patent/EP1381710B1/de not_active Expired - Lifetime
- 2002-04-12 BR BR0208601-8A patent/BR0208601A/pt not_active IP Right Cessation
- 2002-04-12 PT PT02722981T patent/PT1381710E/pt unknown
- 2002-04-12 US US10/473,222 patent/US7160809B2/en not_active Expired - Fee Related
-
2003
- 2003-09-18 ZA ZA200307301A patent/ZA200307301B/en unknown
-
2009
- 2009-04-02 CY CY20091100385T patent/CY1108949T1/el unknown
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60257130A (ja) * | 1984-06-01 | 1985-12-18 | Res Dev Corp Of Japan | ラジカルビ−ムを用いた薄膜形成方法 |
| JPS60194065A (ja) * | 1984-11-09 | 1985-10-02 | Hitachi Ltd | 分子線堆積方法 |
| US5591492A (en) * | 1986-04-11 | 1997-01-07 | Canon Kabushiki Kaisha | Process for forming and etching a film to effect specific crystal growth from activated species |
| EP0297637A1 (de) * | 1987-06-30 | 1989-01-04 | Technische Universiteit Eindhoven | Methode zur Behandlung der Substratoberflächen mit Hilfe von Plasma und Reaktor für die Durchführung dieser Methode |
| WO2000074932A1 (en) * | 1999-06-03 | 2000-12-14 | The Penn State Research Foundation | Deposited thin film void-column network materials |
Non-Patent Citations (4)
| Title |
|---|
| PATENT ABSTRACTS OF JAPAN vol. 010, no. 049 (C - 330) 26 February 1986 (1986-02-26) * |
| PATENT ABSTRACTS OF JAPAN vol. 010, no. 125 (E - 402) 10 May 1986 (1986-05-10) * |
| SEVERENS R J ET AL: "AN EXPANDING THERMAL PLASMA FOR DEPOSITION OF A-SI:H", AMORPHOUS SILICON TECHNOLOGY 1995. SAN FRANCISCO, APRIL 18 - 21, 1995, MRS SYMPOSIUM PROCEEDINGS, PITTSBURGH, MRS, US, vol. 377, 18 April 1995 (1995-04-18), pages 33 - 38, XP000656314, ISBN: 1-55899-280-4 * |
| WILBERS A T M ET AL: "AMORPHOUS HYDROGENATED SILICON FILMS PRODUCED BY AN EXPANDING ARGON-SILANE PLASMA INVESTIGATED WITH SPECTROSCOPIC IR ELLIPSOMETRY", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 204, no. 1, 20 September 1991 (1991-09-20), pages 59 - 75, XP000275034, ISSN: 0040-6090 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CA2442575A1 (en) | 2002-10-24 |
| CA2442575C (en) | 2011-07-19 |
| US20040097056A1 (en) | 2004-05-20 |
| KR100758921B1 (ko) | 2007-09-14 |
| WO2002083979A2 (en) | 2002-10-24 |
| BR0208601A (pt) | 2004-03-23 |
| ES2321165T3 (es) | 2009-06-03 |
| RU2258764C1 (ru) | 2005-08-20 |
| WO2002083979A3 (en) | 2003-04-24 |
| DE60230732D1 (de) | 2009-02-26 |
| ATE420221T1 (de) | 2009-01-15 |
| KR20030092060A (ko) | 2003-12-03 |
| MXPA03008426A (es) | 2004-11-12 |
| AU2002253725B2 (en) | 2006-10-05 |
| PT1381710E (pt) | 2009-04-15 |
| CY1108949T1 (el) | 2014-07-02 |
| CN1279211C (zh) | 2006-10-11 |
| EP1381710A2 (de) | 2004-01-21 |
| CN1503857A (zh) | 2004-06-09 |
| EP1381710B1 (de) | 2009-01-07 |
| RU2003133288A (ru) | 2005-05-10 |
| ZA200307301B (en) | 2004-05-21 |
| US7160809B2 (en) | 2007-01-09 |
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