NL184552C - Halfgeleiderinrichting voor hoge spanningen. - Google Patents

Halfgeleiderinrichting voor hoge spanningen.

Info

Publication number
NL184552C
NL184552C NLAANVRAGE7807835,A NL7807835A NL184552C NL 184552 C NL184552 C NL 184552C NL 7807835 A NL7807835 A NL 7807835A NL 184552 C NL184552 C NL 184552C
Authority
NL
Netherlands
Prior art keywords
semiconductor
high voltages
voltages
Prior art date
Application number
NLAANVRAGE7807835,A
Other languages
English (en)
Dutch (nl)
Other versions
NL184552B (nl
NL7807835A (nl
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Priority to NLAANVRAGE7807835,A priority Critical patent/NL184552C/xx
Priority to CA319,526A priority patent/CA1131801A/en
Priority to DE2901193A priority patent/DE2901193C2/de
Priority to IT19305/79A priority patent/IT1110026B/it
Priority to BR7900229A priority patent/BR7900229A/pt
Priority to GB791412A priority patent/GB2013029B/en
Priority to SE7900337A priority patent/SE432497B/sv
Priority to AU43405/79A priority patent/AU518446B2/en
Priority to CH41779A priority patent/CH638928A5/de
Priority to PL1979212822A priority patent/PL116562B1/pl
Priority to AT0031179A priority patent/AT380975B/de
Priority to ES476907A priority patent/ES476907A1/es
Priority to US06/004,004 priority patent/US4292642A/en
Priority to FR7901086A priority patent/FR2415370A1/fr
Priority to JP346579A priority patent/JPS54109780A/ja
Priority to BE0/192972A priority patent/BE873570A/xx
Priority to DE2927662A priority patent/DE2927662C2/de
Priority to DE2954286A priority patent/DE2954286C2/de
Priority to AU49061/79A priority patent/AU521670B2/en
Priority to CA332,190A priority patent/CA1134055A/en
Priority to CH6783/79A priority patent/CH648693A5/de
Priority to PL1979217279D priority patent/PL119597B1/pl
Priority to ES482691A priority patent/ES482691A1/es
Priority to PL21727979A priority patent/PL217279A1/xx
Priority to IT24514/79A priority patent/IT1122226B/it
Priority to GB7925316A priority patent/GB2026240B/en
Priority to JP54092147A priority patent/JPS5924550B2/ja
Priority to BR7904692A priority patent/BR7904692A/pt
Priority to SE7906289A priority patent/SE437094B/sv
Priority to BE0/196422A priority patent/BE877850A/fr
Priority to FR7918941A priority patent/FR2434487A1/fr
Priority to AT0509379A priority patent/AT382042B/de
Publication of NL7807835A publication Critical patent/NL7807835A/nl
Publication of NL184552B publication Critical patent/NL184552B/xx
Application granted granted Critical
Publication of NL184552C publication Critical patent/NL184552C/xx

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
    • H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
    • H10D62/378—Contact regions to the substrate regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/80—Bidirectional devices, e.g. triacs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/801—FETs having heterojunction gate electrodes
    • H10D30/803—Programmable transistors, e.g. having charge-trapping quantum well
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/83—FETs having PN junction gate electrodes
    • H10D30/831—Vertical FETs having PN junction gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/109—Reduced surface field [RESURF] PN junction structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/213—Channel regions of field-effect devices
    • H10D62/221—Channel regions of field-effect devices of FETs
    • H10D62/328—Channel regions of field-effect devices of FETs having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/60—Impurity distributions or concentrations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/529—Electrodes for IGFETs contacting substrate regions, e.g. for grounding or preventing parasitic effects
NLAANVRAGE7807835,A 1978-01-18 1978-07-24 Halfgeleiderinrichting voor hoge spanningen. NL184552C (nl)

Priority Applications (32)

Application Number Priority Date Filing Date Title
NLAANVRAGE7807835,A NL184552C (nl) 1978-07-24 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.
CA319,526A CA1131801A (en) 1978-01-18 1979-01-11 Semiconductor device
DE2901193A DE2901193C2 (de) 1978-01-18 1979-01-13 Halbleiteranordnung
BR7900229A BR7900229A (pt) 1978-01-18 1979-01-15 Dispositivo semicondutor
GB791412A GB2013029B (en) 1978-01-18 1979-01-15 Semiconductor device
SE7900337A SE432497B (sv) 1978-01-18 1979-01-15 Halvledaranordning med ett bipolert halvledarkopplingselement
IT19305/79A IT1110026B (it) 1978-01-18 1979-01-15 Dispositivo semiconduttore
AU43405/79A AU518446B2 (en) 1978-01-18 1979-01-16 Planar bipolar semiconductor device
CH41779A CH638928A5 (de) 1978-01-18 1979-01-16 Halbleiteranordnung.
PL1979212822A PL116562B1 (en) 1978-01-18 1979-01-16 Semiconductor instrument
AT0031179A AT380975B (de) 1978-01-18 1979-01-16 Halbleiteranordnung mit mindestens einem bipolaren hochspannungshalbleiterschaltungselement
ES476907A ES476907A1 (es) 1978-01-18 1979-01-16 Un dispositivo semiconductor perfeccionado.
US06/004,004 US4292642A (en) 1978-01-18 1979-01-16 Semiconductor device
FR7901086A FR2415370A1 (fr) 1978-01-18 1979-01-17 Dispositif semiconducteur muni d'un composant semiconducteur bipolaire planaire haute tension
BE0/192972A BE873570A (fr) 1978-01-18 1979-01-18 Dispositif semiconducteur muni d'un composant semiconducteur bipolaire planaire haute tension
JP346579A JPS54109780A (en) 1978-01-18 1979-01-18 Semiconductor
DE2927662A DE2927662C2 (de) 1978-07-24 1979-07-09 Halbleiteranordnung
DE2954286A DE2954286C2 (de) 1978-07-24 1979-07-09 Halbleiterbauelement
CA332,190A CA1134055A (en) 1978-07-24 1979-07-19 Semiconductor device
AU49061/79A AU521670B2 (en) 1978-07-24 1979-07-19 Field effect transistor
GB7925316A GB2026240B (en) 1978-07-24 1979-07-20 Semiconductor devices
ES482691A ES482691A1 (es) 1978-07-24 1979-07-20 Un dispositivo semiconductor.
PL21727979A PL217279A1 (de) 1978-07-24 1979-07-20
IT24514/79A IT1122226B (it) 1978-07-24 1979-07-20 Dispositivo semiconduttore
CH6783/79A CH648693A5 (de) 1978-07-24 1979-07-20 Halbleiteranordnung mit mindestens einem feldeffekttransistor.
PL1979217279D PL119597B1 (en) 1978-07-24 1979-07-20 Semiconductor device
JP54092147A JPS5924550B2 (ja) 1978-07-24 1979-07-21 半導体装置
BR7904692A BR7904692A (pt) 1978-07-24 1979-07-23 Dispositivo semicondutor
SE7906289A SE437094B (sv) 1978-07-24 1979-07-23 Halvledaranordning bland annat innefattande en felteffekttransistor
BE0/196422A BE877850A (fr) 1978-07-24 1979-07-23 Dispositif semiconducteur
FR7918941A FR2434487A1 (fr) 1978-07-24 1979-07-23 Dispositif semi-conducteur, a surface plane, comportant un transistor a effet de champ d'une nouvelle structure
AT0509379A AT382042B (de) 1978-07-24 1979-07-24 Halbleiteranordnung mit mindestens einem feldeffekttransistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NLAANVRAGE7807835,A NL184552C (nl) 1978-07-24 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.
NL7807835 1978-07-24

Publications (3)

Publication Number Publication Date
NL7807835A NL7807835A (nl) 1980-01-28
NL184552B NL184552B (nl) 1989-03-16
NL184552C true NL184552C (nl) 1989-08-16

Family

ID=19831291

Family Applications (1)

Application Number Title Priority Date Filing Date
NLAANVRAGE7807835,A NL184552C (nl) 1978-01-18 1978-07-24 Halfgeleiderinrichting voor hoge spanningen.

Country Status (15)

Country Link
JP (1) JPS5924550B2 (de)
AT (1) AT382042B (de)
AU (1) AU521670B2 (de)
BE (1) BE877850A (de)
BR (1) BR7904692A (de)
CA (1) CA1134055A (de)
CH (1) CH648693A5 (de)
DE (2) DE2954286C2 (de)
ES (1) ES482691A1 (de)
FR (1) FR2434487A1 (de)
GB (1) GB2026240B (de)
IT (1) IT1122226B (de)
NL (1) NL184552C (de)
PL (2) PL119597B1 (de)
SE (1) SE437094B (de)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2070858B (en) * 1980-03-03 1985-02-06 Raytheon Co Shallow channel field effect transistor
US4523368A (en) * 1980-03-03 1985-06-18 Raytheon Company Semiconductor devices and manufacturing methods
US4300150A (en) * 1980-06-16 1981-11-10 North American Philips Corporation Lateral double-diffused MOS transistor device
NL187415C (nl) * 1980-09-08 1991-09-16 Philips Nv Halfgeleiderinrichting met gereduceerde oppervlakteveldsterkte.
US4485392A (en) * 1981-12-28 1984-11-27 North American Philips Corporation Lateral junction field effect transistor device
GB2133621B (en) * 1983-01-11 1987-02-04 Emi Ltd Junction field effect transistor
NL8304256A (nl) * 1983-12-09 1985-07-01 Philips Nv Halfgeleiderinrichting.

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL161621C (nl) * 1968-10-16 1980-02-15 Philips Nv Halfgeleiderinrichting met veldeffecttransistor.
JPS4932028B1 (de) * 1969-06-24 1974-08-27
US3814992A (en) * 1972-06-22 1974-06-04 Ibm High performance fet
US4037245A (en) 1975-11-28 1977-07-19 General Electric Company Electric field controlled diode with a current controlling surface grid

Also Published As

Publication number Publication date
FR2434487B1 (de) 1984-06-29
FR2434487A1 (fr) 1980-03-21
ES482691A1 (es) 1980-03-01
PL119597B1 (en) 1982-01-30
AT382042B (de) 1986-12-29
DE2927662C2 (de) 1984-01-12
NL184552B (nl) 1989-03-16
JPS5924550B2 (ja) 1984-06-09
GB2026240B (en) 1982-12-01
AU521670B2 (en) 1982-04-22
BE877850A (fr) 1980-01-23
CA1134055A (en) 1982-10-19
IT1122226B (it) 1986-04-23
DE2927662A1 (de) 1980-02-07
DE2954286C2 (de) 1986-04-17
IT7924514A0 (it) 1979-07-20
NL7807835A (nl) 1980-01-28
PL217279A1 (de) 1980-08-11
SE437094B (sv) 1985-02-04
BR7904692A (pt) 1980-04-15
ATA509379A (de) 1986-05-15
CH648693A5 (de) 1985-03-29
SE7906289L (sv) 1980-01-25
JPS5518098A (en) 1980-02-07
AU4906179A (en) 1980-01-31
GB2026240A (en) 1980-01-30

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Legal Events

Date Code Title Description
A1B A search report has been drawn up
BT A notification was added to the application dossier and made available to the public
BC A request for examination has been filed
A85 Still pending on 85-01-01
V1 Lapsed because of non-payment of the annual fee