NL194568C - Werkwijze voor het vervaardigen van een halfgeleiderlaser. - Google Patents
Werkwijze voor het vervaardigen van een halfgeleiderlaser. Download PDFInfo
- Publication number
- NL194568C NL194568C NL9401649A NL9401649A NL194568C NL 194568 C NL194568 C NL 194568C NL 9401649 A NL9401649 A NL 9401649A NL 9401649 A NL9401649 A NL 9401649A NL 194568 C NL194568 C NL 194568C
- Authority
- NL
- Netherlands
- Prior art keywords
- layer
- type
- evaporation
- etching
- conductivity type
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 75
- 239000004065 semiconductor Substances 0.000 title claims description 58
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 239000010410 layer Substances 0.000 claims description 292
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 41
- 238000005530 etching Methods 0.000 claims description 39
- 238000002347 injection Methods 0.000 claims description 31
- 239000007924 injection Substances 0.000 claims description 31
- 239000011247 coating layer Substances 0.000 claims description 30
- 238000004401 flow injection analysis Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 14
- 229920002120 photoresistant polymer Polymers 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 10
- 239000002131 composite material Substances 0.000 claims description 8
- 229910021478 group 5 element Inorganic materials 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 230000007547 defect Effects 0.000 claims description 5
- 230000007704 transition Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 claims description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 6
- 238000005234 chemical deposition Methods 0.000 claims 2
- 238000005253 cladding Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 230000002265 prevention Effects 0.000 claims 1
- 230000003449 preventive effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 21
- 238000000407 epitaxy Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000003014 reinforcing effect Effects 0.000 description 3
- 125000005842 heteroatom Chemical group 0.000 description 2
- 238000004943 liquid phase epitaxy Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32325—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm red laser based on InGaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2218—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties
- H01S5/2219—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special optical properties absorbing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/223—Buried stripe structure
- H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/321—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures having intermediate bandgap layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/01—Manufacture or treatment
- H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
- H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR930020627 | 1993-10-06 | ||
| KR1019930020627A KR970011146B1 (ko) | 1993-10-06 | 1993-10-06 | 반도체 레이저 다이오드 제조방법 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NL9401649A NL9401649A (nl) | 1995-05-01 |
| NL194568B NL194568B (nl) | 2002-03-01 |
| NL194568C true NL194568C (nl) | 2002-07-02 |
Family
ID=19365322
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL9401649A NL194568C (nl) | 1993-10-06 | 1994-10-06 | Werkwijze voor het vervaardigen van een halfgeleiderlaser. |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US5518954A (ja) |
| JP (1) | JP2911751B2 (ja) |
| KR (1) | KR970011146B1 (ja) |
| NL (1) | NL194568C (ja) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5663976A (en) * | 1995-10-16 | 1997-09-02 | Northwestern University | Buried-ridge laser device |
| KR970054972A (ko) * | 1995-12-29 | 1997-07-31 | 김주용 | 레이저 다이오드 제조방법 |
| JP3787195B2 (ja) * | 1996-09-06 | 2006-06-21 | シャープ株式会社 | 窒化ガリウム系化合物半導体発光素子の製造方法 |
| JP3423203B2 (ja) * | 1997-03-11 | 2003-07-07 | シャープ株式会社 | 半導体レーザ素子の製造方法 |
| JPH11354880A (ja) * | 1998-06-03 | 1999-12-24 | Rohm Co Ltd | 半導体レーザ素子およびその製造方法 |
| JP4040192B2 (ja) * | 1998-11-26 | 2008-01-30 | ソニー株式会社 | 半導体発光素子の製造方法 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01286479A (ja) * | 1988-05-13 | 1989-11-17 | Toshiba Corp | 半導体レーザ装置 |
| JPH0394490A (ja) * | 1989-01-10 | 1991-04-19 | Hitachi Ltd | 半導体レーザ素子 |
| JPH0353578A (ja) * | 1989-07-21 | 1991-03-07 | Nec Corp | 半導体レーザ |
| JPH04116993A (ja) * | 1990-09-07 | 1992-04-17 | Matsushita Electric Ind Co Ltd | 半導体レーザ及びその製造方法 |
| JP2997573B2 (ja) * | 1991-02-19 | 2000-01-11 | 株式会社東芝 | 半導体レーザ装置 |
-
1993
- 1993-10-06 KR KR1019930020627A patent/KR970011146B1/ko not_active Expired - Lifetime
-
1994
- 1994-05-27 US US08/250,554 patent/US5518954A/en not_active Expired - Fee Related
- 1994-06-23 JP JP6141352A patent/JP2911751B2/ja not_active Expired - Lifetime
- 1994-10-06 NL NL9401649A patent/NL194568C/nl not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| NL194568B (nl) | 2002-03-01 |
| JP2911751B2 (ja) | 1999-06-23 |
| KR970011146B1 (ko) | 1997-07-07 |
| JPH07162094A (ja) | 1995-06-23 |
| US5518954A (en) | 1996-05-21 |
| KR950012833A (ko) | 1995-05-17 |
| NL9401649A (nl) | 1995-05-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4901327A (en) | Transverse injection surface emitting laser | |
| US4943970A (en) | Surface emitting laser | |
| US5045500A (en) | Method of making a semiconductor laser | |
| JPH0381317B2 (ja) | ||
| JP2002246686A (ja) | 半導体発光装置およびその製造方法 | |
| US5126804A (en) | Light interactive heterojunction semiconductor device | |
| US5577063A (en) | Semiconductor laser with improved window structure | |
| US6928096B2 (en) | Nitride-based semiconductor laser device and method of fabricating the same | |
| EP0558856B1 (en) | A method for producing a semiconductor laser device | |
| NL194568C (nl) | Werkwijze voor het vervaardigen van een halfgeleiderlaser. | |
| JPH08250807A (ja) | 半導体レーザ装置 | |
| JPH09181389A (ja) | 自励発振型半導体レーザ装置 | |
| US5095489A (en) | Semiconductor laser device | |
| US5770471A (en) | Method of making semiconductor laser with aluminum-free etch stopping layer | |
| US6525344B2 (en) | Light emitting device, semiconductor device, and method of manufacturing the devices | |
| KR20000005704A (ko) | 반도체레이저장치 | |
| JPH06252448A (ja) | 半導体発光素子およびその製造方法 | |
| JP2001094206A (ja) | 半導体レーザ及びその製造方法 | |
| KR100330591B1 (ko) | 반도체레이저다이오드의제조방법 | |
| KR0175441B1 (ko) | 애벌랜치 포토다이오드의 제조방법 | |
| KR100261243B1 (ko) | 레이저 다이오드 및 그의 제조방법 | |
| KR100278632B1 (ko) | 레이저 다이오드 및 그 제조방법 | |
| EP0955709A2 (en) | Blue edge emitting laser | |
| KR100287206B1 (ko) | 반도체레이저소자및그제조방법 | |
| KR100571842B1 (ko) | 레이저 다이오드 및 그 제조방법 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1A | A request for search or an international-type search has been filed | ||
| BB | A search report has been drawn up | ||
| BC | A request for examination has been filed | ||
| V1 | Lapsed because of non-payment of the annual fee |
Effective date: 20080501 |
|
| V4 | Discontinued because of reaching the maximum lifetime of a patent |
Effective date: 20141006 |