NL2000410A1 - Werkwijzen voor het bepalen van de kwaliteit van een lichtbron. - Google Patents
Werkwijzen voor het bepalen van de kwaliteit van een lichtbron.Info
- Publication number
- NL2000410A1 NL2000410A1 NL2000410A NL2000410A NL2000410A1 NL 2000410 A1 NL2000410 A1 NL 2000410A1 NL 2000410 A NL2000410 A NL 2000410A NL 2000410 A NL2000410 A NL 2000410A NL 2000410 A1 NL2000410 A1 NL 2000410A1
- Authority
- NL
- Netherlands
- Prior art keywords
- quality
- determining
- methods
- light source
- source
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70133—Measurement of illumination distribution, in pupil plane or field plane
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/4257—Photometry, e.g. photographic exposure meter using electric radiation detectors applied to monitoring the characteristics of a beam, e.g. laser beam, headlamp beam
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70058—Mask illumination systems
- G03F7/70125—Use of illumination settings tailored to particular mask patterns
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US45891506 | 2006-07-20 | ||
| US11/458,915 US7738692B2 (en) | 2006-07-20 | 2006-07-20 | Methods of determining quality of a light source |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NL2000410A1 true NL2000410A1 (nl) | 2008-01-22 |
| NL2000410C2 NL2000410C2 (nl) | 2008-05-06 |
Family
ID=38626284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL2000410A NL2000410C2 (nl) | 2006-07-20 | 2006-12-28 | Werkwijzen voor het bepalen van de kwaliteit van een lichtbron. |
Country Status (7)
| Country | Link |
|---|---|
| US (4) | US7738692B2 (nl) |
| JP (1) | JP2008028356A (nl) |
| KR (1) | KR100859186B1 (nl) |
| CN (1) | CN101109906B (nl) |
| DE (1) | DE102007020033B4 (nl) |
| NL (1) | NL2000410C2 (nl) |
| TW (1) | TWI327024B (nl) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7738692B2 (en) * | 2006-07-20 | 2010-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of determining quality of a light source |
| DE102008002753B4 (de) * | 2007-12-19 | 2010-03-25 | Vistec Semiconductor Systems Gmbh | Verfahren zur optischen Inspektion, Detektion und Visualisierung von Defekten auf scheibenförmigen Objekten |
| DE102012205181B4 (de) | 2012-03-30 | 2015-09-24 | Carl Zeiss Smt Gmbh | Messvorrichtung zum Vermessen einer Beleuchtungseigenschaft |
| WO2022202420A1 (ja) * | 2021-03-24 | 2022-09-29 | 株式会社Screenホールディングス | 基板処理方法、プラズマ発生装置およびプラズマ発生装置の設計方法 |
Family Cites Families (51)
| Publication number | Priority date | Publication date | Assignee | Title |
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| FR2523351B1 (fr) | 1982-03-09 | 1989-07-13 | Thomson Csf | Tete optique dans un dispositif d'enregistrement-lecture d'un support d'information |
| US4545683A (en) | 1983-02-28 | 1985-10-08 | The Perkin-Elmer Corporation | Wafer alignment device |
| US4701050A (en) | 1984-08-10 | 1987-10-20 | Hitachi, Ltd. | Semiconductor exposure apparatus and alignment method therefor |
| JP2571054B2 (ja) * | 1987-04-28 | 1997-01-16 | キヤノン株式会社 | 露光装置及び素子製造方法 |
| JP2691406B2 (ja) * | 1988-01-14 | 1997-12-17 | 浜松ホトニクス株式会社 | 画像再構成装置 |
| US5263099A (en) * | 1989-11-17 | 1993-11-16 | Picker International, Inc. | High speed window and level function modification for real time video processing |
| US5541026A (en) | 1991-06-13 | 1996-07-30 | Nikon Corporation | Exposure apparatus and photo mask |
| EP0540833B1 (de) * | 1991-08-12 | 1997-04-23 | KOENIG & BAUER-ALBERT AKTIENGESELLSCHAFT | Qualitätskontrolle einer Bildvorlage z. B. eines gedruckten Musters |
| JP3194155B2 (ja) * | 1992-01-31 | 2001-07-30 | キヤノン株式会社 | 半導体デバイスの製造方法及びそれを用いた投影露光装置 |
| US5537260A (en) | 1993-01-26 | 1996-07-16 | Svg Lithography Systems, Inc. | Catadioptric optical reduction system with high numerical aperture |
| US5432588A (en) | 1993-02-08 | 1995-07-11 | Mitsubishi Denk Kabushiki Kaisha | Semiconductor device and method of making the semiconductor device |
| US5406543A (en) | 1993-04-07 | 1995-04-11 | Olympus Optical Co., Ltd. | Optical head with semiconductor laser |
| JPH07120326A (ja) * | 1993-10-22 | 1995-05-12 | Komatsu Ltd | 波長検出装置 |
| KR0166612B1 (ko) | 1993-10-29 | 1999-02-01 | 가나이 쓰토무 | 패턴노광방법 및 그 장치와 그것에 이용되는 마스크와 그것을 이용하여 만들어진 반도체 집적회로 |
| US5477057A (en) | 1994-08-17 | 1995-12-19 | Svg Lithography Systems, Inc. | Off axis alignment system for scanning photolithography |
| US5774222A (en) | 1994-10-07 | 1998-06-30 | Hitachi, Ltd. | Manufacturing method of semiconductor substrative and method and apparatus for inspecting defects of patterns on an object to be inspected |
| US5706091A (en) * | 1995-04-28 | 1998-01-06 | Nikon Corporation | Apparatus for detecting a mark pattern on a substrate |
| JP3303595B2 (ja) | 1995-03-24 | 2002-07-22 | キヤノン株式会社 | 照明装置及びそれを用いた観察装置 |
| JPH09199390A (ja) | 1996-01-16 | 1997-07-31 | Hitachi Ltd | パターン形成方法、投影露光装置および半導体装置の製造方法 |
| US5818571A (en) * | 1996-05-06 | 1998-10-06 | Photometrics, Ltd. | Apparatus with off-axis light path for characterizing the luminous intensity of lamp |
| JPH10105707A (ja) * | 1996-09-25 | 1998-04-24 | Sony Corp | 画像照合装置 |
| JP3588212B2 (ja) | 1996-12-20 | 2004-11-10 | 株式会社ルネサステクノロジ | 露光用マスク及びその作製方法並びに半導体装置の製造方法 |
| US5859891A (en) * | 1997-03-07 | 1999-01-12 | Hibbard; Lyn | Autosegmentation/autocontouring system and method for use with three-dimensional radiation therapy treatment planning |
| EP0955641B1 (de) | 1998-05-05 | 2004-04-28 | Carl Zeiss | Beleuchtungssystem insbesondere für die EUV-Lithographie |
| US6466304B1 (en) | 1998-10-22 | 2002-10-15 | Asm Lithography B.V. | Illumination device for projection system and method for fabricating |
| JP2000205966A (ja) * | 1999-01-20 | 2000-07-28 | Komatsu Ltd | 真空紫外レ―ザの波長測定装置 |
| US6281967B1 (en) | 2000-03-15 | 2001-08-28 | Nikon Corporation | Illumination apparatus, exposure apparatus and exposure method |
| JP2001189359A (ja) * | 2000-01-04 | 2001-07-10 | Toshiba Corp | パターン検査装置 |
| US6549272B1 (en) | 2000-03-16 | 2003-04-15 | Intel Corporation | Method for improved resolution of patterning using binary masks with pupil filters |
| US6567155B1 (en) | 2000-03-16 | 2003-05-20 | Intel Corporation | Method for improved resolution of patterning using binary masks with pupil filters |
| US6398368B2 (en) | 2000-06-09 | 2002-06-04 | Acer Communications And Multimedia Inc. | Light pipe for a projector system |
| JP4640688B2 (ja) | 2000-07-10 | 2011-03-02 | 株式会社ニコン | 照明光学装置および該照明光学装置を備えた露光装置 |
| CA2352639A1 (en) * | 2000-07-14 | 2002-01-14 | John Joseph Cullen | A method and apparatus for monitoring a condition in chlorophyll containing matter |
| JP4266082B2 (ja) | 2001-04-26 | 2009-05-20 | 株式会社東芝 | 露光用マスクパターンの検査方法 |
| US6744505B1 (en) | 2001-09-06 | 2004-06-01 | Therma-Wave, Inc. | Compact imaging spectrometer |
| US6846617B2 (en) | 2002-05-15 | 2005-01-25 | Numerical Technologies | Facilitating optical proximity effect correction through pupil filtering |
| JP4169573B2 (ja) * | 2002-10-23 | 2008-10-22 | 株式会社東京精密 | パターン検査方法及び検査装置 |
| EP1420297A3 (en) | 2002-11-13 | 2006-08-09 | ASML Netherlands B.V. | Lithographic apparatus and method to determine beam size and divergence |
| WO2004066371A1 (ja) * | 2003-01-23 | 2004-08-05 | Nikon Corporation | 露光装置 |
| US7030966B2 (en) | 2003-02-11 | 2006-04-18 | Asml Netherlands B.V. | Lithographic apparatus and method for optimizing an illumination source using photolithographic simulations |
| US6839125B2 (en) * | 2003-02-11 | 2005-01-04 | Asml Netherlands B.V. | Method for optimizing an illumination source using full resist simulation and process window response metric |
| JP4749332B2 (ja) | 2003-05-30 | 2011-08-17 | オムニビジョン テクノロジーズ, インコーポレイテッド | 拡大された焦点深度を有するリソグラフィックシステムおよび方法 |
| KR20050025927A (ko) * | 2003-09-08 | 2005-03-14 | 유웅덕 | 홍채인식을 위한 동공 검출 방법 및 형상기술자 추출방법과 그를 이용한 홍채 특징 추출 장치 및 그 방법과홍채인식 시스템 및 그 방법 |
| JP2005353869A (ja) | 2004-06-11 | 2005-12-22 | Nikon Corp | 光強度分布の評価方法、調整方法、照明光学装置、露光装置、および露光方法 |
| JP2006098217A (ja) * | 2004-09-29 | 2006-04-13 | Fujitsu Ltd | 画像検査装置、画像検査方法及び画像検査プログラム |
| US20060072097A1 (en) * | 2004-10-06 | 2006-04-06 | Zach Franz X | Method for characterization of the illuminator in a lithographic system |
| JP4942301B2 (ja) * | 2004-11-30 | 2012-05-30 | 新光電気工業株式会社 | 直接露光装置および直接露光方法 |
| US20060131505A1 (en) * | 2004-12-17 | 2006-06-22 | Eastman Kodak Company | Imaging element |
| US7420146B1 (en) * | 2005-03-08 | 2008-09-02 | Spawr Walter J | Laser beam monitor and control method |
| US7224437B2 (en) * | 2005-05-31 | 2007-05-29 | Invarium, Inc | Method for measuring and verifying stepper illumination |
| US7738692B2 (en) * | 2006-07-20 | 2010-06-15 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods of determining quality of a light source |
-
2006
- 2006-07-20 US US11/458,915 patent/US7738692B2/en not_active Expired - Fee Related
- 2006-11-29 TW TW095144201A patent/TWI327024B/zh not_active IP Right Cessation
- 2006-12-26 JP JP2006348790A patent/JP2008028356A/ja active Pending
- 2006-12-28 NL NL2000410A patent/NL2000410C2/nl active Search and Examination
-
2007
- 2007-01-05 CN CN200710000117XA patent/CN101109906B/zh active Active
- 2007-01-22 KR KR1020070006747A patent/KR100859186B1/ko active Active
- 2007-04-27 DE DE102007020033.3A patent/DE102007020033B4/de active Active
-
2010
- 2010-05-04 US US12/773,143 patent/US8184896B2/en not_active Ceased
-
2014
- 2014-05-21 US US14/284,117 patent/USRE47197E1/en not_active Expired - Fee Related
-
2016
- 2016-05-24 US US15/162,702 patent/USRE47272E1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| USRE47197E1 (en) | 2019-01-08 |
| TW200808033A (en) | 2008-02-01 |
| USRE47272E1 (en) | 2019-03-05 |
| US8184896B2 (en) | 2012-05-22 |
| DE102007020033A1 (de) | 2008-01-31 |
| CN101109906A (zh) | 2008-01-23 |
| KR20080008936A (ko) | 2008-01-24 |
| TWI327024B (en) | 2010-07-01 |
| US20080019586A1 (en) | 2008-01-24 |
| US7738692B2 (en) | 2010-06-15 |
| CN101109906B (zh) | 2010-12-08 |
| NL2000410C2 (nl) | 2008-05-06 |
| DE102007020033B4 (de) | 2014-03-13 |
| US20100214547A1 (en) | 2010-08-26 |
| JP2008028356A (ja) | 2008-02-07 |
| KR100859186B1 (ko) | 2008-09-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| AD1A | A request for search or an international type search has been filed | ||
| RD2N | Patents in respect of which a decision has been taken or a report has been made (novelty report) |
Effective date: 20080220 |
|
| PD2B | A search report has been drawn up |