NL2000563A1 - Extraheren van gewone en buitengewone optische karakteristieken voor de meting van kritische afmetingen van anisotrope materialen. - Google Patents

Extraheren van gewone en buitengewone optische karakteristieken voor de meting van kritische afmetingen van anisotrope materialen.

Info

Publication number
NL2000563A1
NL2000563A1 NL2000563A NL2000563A NL2000563A1 NL 2000563 A1 NL2000563 A1 NL 2000563A1 NL 2000563 A NL2000563 A NL 2000563A NL 2000563 A NL2000563 A NL 2000563A NL 2000563 A1 NL2000563 A1 NL 2000563A1
Authority
NL
Netherlands
Prior art keywords
measurement
optical characteristics
critical dimensions
anisotropic materials
extraordinary optical
Prior art date
Application number
NL2000563A
Other languages
English (en)
Other versions
NL2000563C2 (nl
Inventor
Jacky Huang
Chih-Ming Ke
Tsai-Sheng Gau
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of NL2000563A1 publication Critical patent/NL2000563A1/nl
Application granted granted Critical
Publication of NL2000563C2 publication Critical patent/NL2000563C2/nl

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0641—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of polarization
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/21—Polarisation-affecting properties
    • G01N21/211—Ellipsometry
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
    • G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
    • G03F1/84—Inspecting
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N2021/8411—Application to online plant, process monitoring
    • G01N2021/8416—Application to online plant, process monitoring and process controlling, not otherwise provided for
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G01N2021/95676—Masks, reticles, shadow masks

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
NL2000563A 2006-04-17 2007-03-29 Extraheren van gewone en buitengewone optische karakteristieken voor de meting van kritische afmetingen van anisotrope materialen. NL2000563C2 (nl)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US79256006P 2006-04-17 2006-04-17
US79256006 2006-04-17
US46702306 2006-08-24
US11/467,023 US7787685B2 (en) 2006-04-17 2006-08-24 Extracting ordinary and extraordinary optical characteristics for critical dimension measurement of anisotropic materials

Publications (2)

Publication Number Publication Date
NL2000563A1 true NL2000563A1 (nl) 2007-10-19
NL2000563C2 NL2000563C2 (nl) 2009-05-26

Family

ID=38604531

Family Applications (1)

Application Number Title Priority Date Filing Date
NL2000563A NL2000563C2 (nl) 2006-04-17 2007-03-29 Extraheren van gewone en buitengewone optische karakteristieken voor de meting van kritische afmetingen van anisotrope materialen.

Country Status (2)

Country Link
US (1) US7787685B2 (nl)
NL (1) NL2000563C2 (nl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20100052908A (ko) * 2008-11-11 2010-05-20 삼성전자주식회사 공정 제어 시스템 및 공정 제어 방법
US20140079312A9 (en) 2010-06-17 2014-03-20 Nova Measuring Instruments Ltd. Method and system for optimizing optical inspection of patterned structures
KR102072966B1 (ko) 2012-11-30 2020-02-05 삼성디스플레이 주식회사 표시기판 및 표시기판의 패턴 치수의 측정방법
US20140216498A1 (en) * 2013-02-06 2014-08-07 Kwangduk Douglas Lee Methods of dry stripping boron-carbon films
US20150371851A1 (en) * 2013-03-15 2015-12-24 Applied Materials, Inc. Amorphous carbon deposition process using dual rf bias frequency applications
US9305840B2 (en) * 2013-12-21 2016-04-05 Macronix International Co., Ltd. Cluster system for eliminating barrier overhang
KR102757324B1 (ko) * 2018-05-24 2025-01-20 어플라이드 머티어리얼스, 인코포레이티드 공간적으로 분해된 웨이퍼 온도 제어를 위한 가상 센서
CN112729108B (zh) * 2020-12-18 2022-12-06 长江存储科技有限责任公司 一种光学关键尺寸ocd测量设备的校准方法
KR20240057861A (ko) * 2022-10-25 2024-05-03 삼성전자주식회사 반도체 계측 장치

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6441902B1 (en) 1999-03-26 2002-08-27 J. A. Woollam Co. Inc. Method for evaluating sample system anisotropic refractive indices and orientations thereof in multiple dimensions
US20020018217A1 (en) 2000-08-11 2002-02-14 Michael Weber-Grabau Optical critical dimension metrology system integrated into semiconductor wafer process tool
US20040038537A1 (en) * 2002-08-20 2004-02-26 Wei Liu Method of preventing or suppressing sidewall buckling of mask structures used to etch feature sizes smaller than 50nm
DE10339988B4 (de) * 2003-08-29 2008-06-12 Advanced Micro Devices, Inc., Sunnyvale Verfahren zur Herstellung einer antireflektierenden Schicht
JP2005194451A (ja) * 2004-01-09 2005-07-21 Fuji Photo Film Co Ltd 組成物、光学補償フィルム及び液晶表示装置
US7250309B2 (en) * 2004-01-09 2007-07-31 Applied Materials, Inc. Integrated phase angle and optical critical dimension measurement metrology for feed forward and feedback process control
US7349086B2 (en) 2005-12-30 2008-03-25 Taiwan Semiconductor Manufacturing Co., Ltd. Systems and methods for optical measurement

Also Published As

Publication number Publication date
NL2000563C2 (nl) 2009-05-26
US20070242263A1 (en) 2007-10-18
US7787685B2 (en) 2010-08-31

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AD1A A request for search or an international type search has been filed
RD2N Patents in respect of which a decision has been taken or a report has been made (novelty report)

Effective date: 20090325

PD2B A search report has been drawn up