NL2004505C2 - Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad. - Google Patents

Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad. Download PDF

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Publication number
NL2004505C2
NL2004505C2 NL2004505A NL2004505A NL2004505C2 NL 2004505 C2 NL2004505 C2 NL 2004505C2 NL 2004505 A NL2004505 A NL 2004505A NL 2004505 A NL2004505 A NL 2004505A NL 2004505 C2 NL2004505 C2 NL 2004505C2
Authority
NL
Netherlands
Prior art keywords
lithography system
immersion lithography
sealed wafer
wafer bath
bath
Prior art date
Application number
NL2004505A
Other languages
English (en)
Other versions
NL2004505A (nl
Inventor
Burn-Jeng Lin
Ching-Yu Chang
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Priority to NL2004505A priority Critical patent/NL2004505C2/nl
Publication of NL2004505A publication Critical patent/NL2004505A/nl
Application granted granted Critical
Publication of NL2004505C2 publication Critical patent/NL2004505C2/nl

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
NL2004505A 2006-11-03 2010-04-02 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad. NL2004505C2 (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL2004505A NL2004505C2 (nl) 2006-11-03 2010-04-02 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad.

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US86424106P 2006-11-03 2006-11-03
US86424106 2006-11-03
US67104607 2007-02-05
US11/671,046 US8253922B2 (en) 2006-11-03 2007-02-05 Immersion lithography system using a sealed wafer bath
NL1034412A NL1034412C (nl) 2006-11-03 2007-09-20 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad.
NL1034412 2007-09-20
NL2004505A NL2004505C2 (nl) 2006-11-03 2010-04-02 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad.
NL2004505 2010-04-02

Publications (2)

Publication Number Publication Date
NL2004505A NL2004505A (nl) 2010-06-09
NL2004505C2 true NL2004505C2 (nl) 2011-07-19

Family

ID=39359442

Family Applications (2)

Application Number Title Priority Date Filing Date
NL1034412A NL1034412C (nl) 2006-11-03 2007-09-20 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad.
NL2004505A NL2004505C2 (nl) 2006-11-03 2010-04-02 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad.

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL1034412A NL1034412C (nl) 2006-11-03 2007-09-20 Immersie-lithografiesysteem met gebruikmaking van een afgedicht waferbad.

Country Status (5)

Country Link
US (6) US8253922B2 (nl)
JP (1) JP4795319B2 (nl)
CN (1) CN101174101A (nl)
NL (2) NL1034412C (nl)
TW (1) TWI403857B (nl)

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CN105988294B (zh) * 2015-01-28 2018-05-04 上海微电子装备（集团）股份有限公司 一种浸没式光刻机浸液流场维持防碰撞系统
JP6472693B2 (ja) 2015-03-24 2019-02-20 株式会社荏原製作所 基板処理装置
US9793183B1 (en) 2016-07-29 2017-10-17 Taiwan Semiconductor Manufacturing Co., Ltd. System and method for measuring and improving overlay using electronic microscopic imaging and digital processing
US10043650B2 (en) 2016-09-22 2018-08-07 Taiwan Semiconductor Manufacturing Co., Ltd. Method and system for wet chemical bath process
US10274818B2 (en) 2016-12-15 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Lithography patterning with sub-resolution assistant patterns and off-axis illumination
US11054742B2 (en) 2018-06-15 2021-07-06 Taiwan Semiconductor Manufacturing Co., Ltd. EUV metallic resist performance enhancement via additives
US11069526B2 (en) 2018-06-27 2021-07-20 Taiwan Semiconductor Manufacturing Co., Ltd. Using a self-assembly layer to facilitate selective formation of an etching stop layer
US10867805B2 (en) 2018-06-29 2020-12-15 Taiwan Semiconductor Manufacturing Co., Ltd. Selective removal of an etching stop layer for improving overlay shift tolerance
CN111830788B (zh) * 2019-04-17 2021-11-12 上海微电子装备（集团）股份有限公司 抽排间隙调整装置、光刻设备及抽排间隙调整方法
US11289376B2 (en) 2019-07-31 2022-03-29 Taiwan Semiconductor Manufacturing Co., Ltd Methods for forming self-aligned interconnect structures
US12009400B2 (en) 2021-02-14 2024-06-11 Taiwan Semiconductor Manufacturing Company, Ltd. Device providing multiple threshold voltages and methods of making the same
US12495579B2 (en) 2021-06-24 2025-12-09 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device with leakage current suppression and method of forming the same
US12550678B2 (en) 2021-08-30 2026-02-10 Taiwan Semiconductor Manufacturing Company Ltd. Method and device for placing semiconductor wafer

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US7986395B2 (en) * 2005-10-24 2011-07-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography apparatus and methods
US8253922B2 (en) 2006-11-03 2012-08-28 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
US8208116B2 (en) 2006-11-03 2012-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Immersion lithography system using a sealed wafer bath
KR100864928B1 (ko) * 2006-12-29 2008-10-22 동부일렉트로닉스 주식회사 모스펫 소자의 형성 방법
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Also Published As

Publication number Publication date
US20150261103A1 (en) 2015-09-17
US20200124992A1 (en) 2020-04-23
US20080106715A1 (en) 2008-05-08
US11003097B2 (en) 2021-05-11
JP2008118114A (ja) 2008-05-22
TW200821766A (en) 2008-05-16
NL1034412C (nl) 2010-04-09
NL1034412A1 (nl) 2008-05-08
JP4795319B2 (ja) 2011-10-19
US20120320351A1 (en) 2012-12-20
US9696634B2 (en) 2017-07-04
US20190113855A1 (en) 2019-04-18
NL2004505A (nl) 2010-06-09
US10168625B2 (en) 2019-01-01
US8253922B2 (en) 2012-08-28
TWI403857B (zh) 2013-08-01
CN101174101A (zh) 2008-05-07
US20170299968A1 (en) 2017-10-19
US10520836B2 (en) 2019-12-31
US9046789B2 (en) 2015-06-02

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