NL251064A - - Google Patents
Info
- Publication number
- NL251064A NL251064A NL251064DA NL251064A NL 251064 A NL251064 A NL 251064A NL 251064D A NL251064D A NL 251064DA NL 251064 A NL251064 A NL 251064A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D10/00—Bipolar junction transistors [BJT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/40—Resistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/38—Devices controlled only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/645—Combinations of only lateral BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
- H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
- H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
- H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/043—Dual dielectric
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/167—Two diffusions in one hole
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US544897A US2858489A (en) | 1955-11-04 | 1955-11-04 | Power transistor |
| US810388A US3025589A (en) | 1955-11-04 | 1959-05-01 | Method of manufacturing semiconductor devices |
| US30256A US3064167A (en) | 1955-11-04 | 1960-05-19 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL251064A true NL251064A (mo) |
Family
ID=27363619
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL121810D NL121810C (mo) | 1955-11-04 | ||
| NL251064D NL251064A (mo) | 1955-11-04 | ||
| NL6605653A NL6605653A (mo) | 1955-11-04 | 1966-04-27 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL121810D NL121810C (mo) | 1955-11-04 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6605653A NL6605653A (mo) | 1955-11-04 | 1966-04-27 |
Country Status (5)
| Country | Link |
|---|---|
| US (3) | US2858489A (mo) |
| CH (3) | CH399603A (mo) |
| DE (1) | DE1197548C2 (mo) |
| GB (2) | GB843409A (mo) |
| NL (3) | NL6605653A (mo) |
Families Citing this family (105)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2980830A (en) * | 1956-08-22 | 1961-04-18 | Shockley William | Junction transistor |
| BE560551A (mo) * | 1956-09-05 | |||
| US2967985A (en) * | 1957-04-11 | 1961-01-10 | Shockley | Transistor structure |
| BE531769A (mo) * | 1957-08-07 | 1900-01-01 | ||
| GB945747A (mo) * | 1959-02-06 | Texas Instruments Inc | ||
| GB958249A (en) * | 1959-05-06 | 1964-05-21 | Texas Instruments Inc | Semiconductor circuits |
| NL252131A (mo) * | 1959-06-30 | |||
| US3117260A (en) * | 1959-09-11 | 1964-01-07 | Fairchild Camera Instr Co | Semiconductor circuit complexes |
| NL257516A (mo) * | 1959-11-25 | |||
| US3234440A (en) * | 1959-12-30 | 1966-02-08 | Ibm | Semiconductor device fabrication |
| NL265382A (mo) * | 1960-03-08 | |||
| NL269092A (mo) * | 1960-09-09 | 1900-01-01 | ||
| US3278811A (en) * | 1960-10-04 | 1966-10-11 | Hayakawa Denki Kogyo Kabushiki | Radiation energy transducing device |
| US3193418A (en) * | 1960-10-27 | 1965-07-06 | Fairchild Camera Instr Co | Semiconductor device fabrication |
| US3189798A (en) * | 1960-11-29 | 1965-06-15 | Westinghouse Electric Corp | Monolithic semiconductor device and method of preparing same |
| US3151004A (en) * | 1961-03-30 | 1964-09-29 | Rca Corp | Semiconductor devices |
| US3166448A (en) * | 1961-04-07 | 1965-01-19 | Clevite Corp | Method for producing rib transistor |
| NL274830A (mo) * | 1961-04-12 | |||
| GB967002A (en) * | 1961-05-05 | 1964-08-19 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3227933A (en) * | 1961-05-17 | 1966-01-04 | Fairchild Camera Instr Co | Diode and contact structure |
| US3177414A (en) * | 1961-07-26 | 1965-04-06 | Nippon Electric Co | Device comprising a plurality of transistors |
| US3233305A (en) * | 1961-09-26 | 1966-02-08 | Ibm | Switching transistors with controlled emitter-base breakdown |
| US3330030A (en) * | 1961-09-29 | 1967-07-11 | Texas Instruments Inc | Method of making semiconductor devices |
| US3197681A (en) * | 1961-09-29 | 1965-07-27 | Texas Instruments Inc | Semiconductor devices with heavily doped region to prevent surface inversion |
| US3189973A (en) * | 1961-11-27 | 1965-06-22 | Bell Telephone Labor Inc | Method of fabricating a semiconductor device |
| DE1639051C2 (de) * | 1961-12-01 | 1981-07-02 | Western Electric Co., Inc., 10038 New York, N.Y. | Verfahren zum Herstellen eines ohmschen Kontakts an einem Silicium-Halbleiterkörper |
| NL286507A (mo) * | 1961-12-11 | |||
| US3184657A (en) * | 1962-01-05 | 1965-05-18 | Fairchild Camera Instr Co | Nested region transistor configuration |
| US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
| DE1444521B2 (de) * | 1962-02-01 | 1971-02-25 | Siemens AG, 1000 Berlin u 8000 München | Verfahren zur herstellung einer halbleiteranordnung |
| US3265542A (en) * | 1962-03-15 | 1966-08-09 | Philco Corp | Semiconductor device and method for the fabrication thereof |
| BE631066A (mo) * | 1962-04-16 | |||
| US3260115A (en) * | 1962-05-18 | 1966-07-12 | Bell Telephone Labor Inc | Temperature sensitive element |
| US3212160A (en) * | 1962-05-18 | 1965-10-19 | Transitron Electronic Corp | Method of manufacturing semiconductive devices |
| US3266137A (en) * | 1962-06-07 | 1966-08-16 | Hughes Aircraft Co | Metal ball connection to crystals |
| US3183576A (en) * | 1962-06-26 | 1965-05-18 | Ibm | Method of making transistor structures |
| NL294675A (mo) * | 1962-06-29 | |||
| US3255005A (en) * | 1962-06-29 | 1966-06-07 | Tung Sol Electric Inc | Masking process for semiconductor elements |
| US3206827A (en) * | 1962-07-06 | 1965-09-21 | Gen Instrument Corp | Method of producing a semiconductor device |
| US3296040A (en) * | 1962-08-17 | 1967-01-03 | Fairchild Camera Instr Co | Epitaxially growing layers of semiconductor through openings in oxide mask |
| BE636317A (mo) * | 1962-08-23 | 1900-01-01 | ||
| US3204321A (en) * | 1962-09-24 | 1965-09-07 | Philco Corp | Method of fabricating passivated mesa transistor without contamination of junctions |
| US3271640A (en) * | 1962-10-11 | 1966-09-06 | Fairchild Camera Instr Co | Semiconductor tetrode |
| US3245794A (en) * | 1962-10-29 | 1966-04-12 | Ihilco Corp | Sequential registration scheme |
| US3271201A (en) * | 1962-10-30 | 1966-09-06 | Itt | Planar semiconductor devices |
| BE639365A (mo) * | 1962-10-30 | |||
| US3373324A (en) * | 1962-12-05 | 1968-03-12 | Motorola Inc | Semiconductor device with automatic gain control |
| US3362858A (en) * | 1963-01-04 | 1968-01-09 | Westinghouse Electric Corp | Fabrication of semiconductor controlled rectifiers |
| US3275910A (en) * | 1963-01-18 | 1966-09-27 | Motorola Inc | Planar transistor with a relative higher-resistivity base region |
| NL303035A (mo) * | 1963-02-06 | 1900-01-01 | ||
| US3205798A (en) * | 1963-03-29 | 1965-09-14 | Polaroid Corp | Shutter timing apparatus and method |
| US3328214A (en) * | 1963-04-22 | 1967-06-27 | Siliconix Inc | Process for manufacturing horizontal transistor structure |
| US3246214A (en) * | 1963-04-22 | 1966-04-12 | Siliconix Inc | Horizontally aligned junction transistor structure |
| GB1054331A (mo) * | 1963-05-16 | |||
| US3291658A (en) * | 1963-06-28 | 1966-12-13 | Ibm | Process of making tunnel diodes that results in a peak current that is maintained over a long period of time |
| US3279963A (en) * | 1963-07-23 | 1966-10-18 | Ibm | Fabrication of semiconductor devices |
| US3354364A (en) * | 1963-08-22 | 1967-11-21 | Nippon Electric Co | Discontinuous resistance semiconductor device |
| DE1229650B (de) * | 1963-09-30 | 1966-12-01 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelementes mit pn-UEbergang nach der Planar-Diffusionstechnik |
| US3206339A (en) * | 1963-09-30 | 1965-09-14 | Philco Corp | Method of growing geometricallydefined epitaxial layer without formation of undesirable crystallites |
| DE1228343B (de) * | 1963-10-22 | 1966-11-10 | Siemens Ag | Steuerbare Halbleiterdiode mit stellenweise negativer Strom-Spannungs-Kennlinie |
| US3312881A (en) * | 1963-11-08 | 1967-04-04 | Ibm | Transistor with limited area basecollector junction |
| DE1250790B (de) * | 1963-12-13 | 1967-09-28 | N.V. Philips' Gloeilampenfabrieken, Eindhoven (Niederlande) | Verfahren zur Herstellung diffundierter Zonen von Verunreinigungen in einem Halbleiterkörper |
| NL134170C (mo) * | 1963-12-17 | 1900-01-01 | ||
| US3504239A (en) * | 1964-01-31 | 1970-03-31 | Rca Corp | Transistor with distributed resistor between emitter lead and emitter region |
| GB993388A (en) * | 1964-02-05 | 1965-05-26 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3298879A (en) * | 1964-03-23 | 1967-01-17 | Rca Corp | Method of fabricating a semiconductor by masking |
| DE1514807B2 (de) * | 1964-04-15 | 1971-09-02 | Texas Instruments Inc., Dallas. Tex. (V.St.A.) | Verfahren zum herstellen einer planaren halbleiteranordnung |
| US3290570A (en) * | 1964-04-28 | 1966-12-06 | Texas Instruments Inc | Multilevel expanded metallic contacts for semiconductor devices |
| US3409483A (en) * | 1964-05-01 | 1968-11-05 | Texas Instruments Inc | Selective deposition of semiconductor materials |
| US3363151A (en) * | 1964-07-09 | 1968-01-09 | Transitron Electronic Corp | Means for forming planar junctions and devices |
| US3364399A (en) * | 1964-07-15 | 1968-01-16 | Irc Inc | Array of transistors having a layer of soft metal film for dividing |
| US3492546A (en) * | 1964-07-27 | 1970-01-27 | Raytheon Co | Contact for semiconductor device |
| DE1261480B (de) * | 1964-09-17 | 1968-02-22 | Telefunken Patent | Verfahren zur Erzeugung einer elektrisch isolierenden Schicht auf einem Halbleiterkoerper |
| US3310442A (en) * | 1964-10-16 | 1967-03-21 | Siemens Ag | Method of producing semiconductors by diffusion |
| US3341380A (en) * | 1964-12-28 | 1967-09-12 | Gen Electric | Method of producing semiconductor devices |
| US3409482A (en) * | 1964-12-30 | 1968-11-05 | Sprague Electric Co | Method of making a transistor with a very thin diffused base and an epitaxially grown emitter |
| USB422695I5 (mo) * | 1964-12-31 | 1900-01-01 | ||
| GB1124762A (en) * | 1965-01-08 | 1968-08-21 | Lucas Industries Ltd | Semi-conductor devices |
| US3391023A (en) * | 1965-03-29 | 1968-07-02 | Fairchild Camera Instr Co | Dielecteric isolation process |
| US3313661A (en) * | 1965-05-14 | 1967-04-11 | Dickson Electronics Corp | Treating of surfaces of semiconductor elements |
| DE1264619C2 (de) * | 1965-06-18 | 1968-10-10 | Siemens Ag | Verfahren zum Herstellen einer Halbleiteranordnung, insbesondere aus Silizium, einer Silizium-Germanium-Legierung oder aus Siliziumkarbid |
| US3667115A (en) * | 1965-06-30 | 1972-06-06 | Ibm | Fabrication of semiconductor devices with cup-shaped regions |
| US3922706A (en) * | 1965-07-31 | 1975-11-25 | Telefunken Patent | Transistor having emitter with high circumference-surface area ratio |
| GB1161782A (en) * | 1965-08-26 | 1969-08-20 | Associated Semiconductor Mft | Improvements in Semiconductor Devices. |
| US3461550A (en) * | 1965-09-22 | 1969-08-19 | Monti E Aklufi | Method of fabricating semiconductor devices |
| US3360851A (en) * | 1965-10-01 | 1968-01-02 | Bell Telephone Labor Inc | Small area semiconductor device |
| US3457631A (en) * | 1965-11-09 | 1969-07-29 | Gen Electric | Method of making a high frequency transistor structure |
| DE1283400B (de) * | 1965-11-23 | 1968-11-21 | Siemens Ag | Verfahren zum Herstellen einer Vielzahl von Siliciumplanartransistoren |
| DE1293308B (de) * | 1966-01-21 | 1969-04-24 | Siemens Ag | Transistoranordnung zur Strombegrenzung |
| US3490962A (en) * | 1966-04-25 | 1970-01-20 | Ibm | Diffusion process |
| US3504430A (en) * | 1966-06-27 | 1970-04-07 | Hitachi Ltd | Method of making semiconductor devices having insulating films |
| DE1300164B (de) * | 1967-01-26 | 1969-07-31 | Itt Ind Gmbh Deutsche | Verfahren zum Herstellen von Zenerdioden |
| US3503124A (en) * | 1967-02-08 | 1970-03-31 | Frank M Wanlass | Method of making a semiconductor device |
| US3577042A (en) * | 1967-06-19 | 1971-05-04 | Int Rectifier Corp | Gate connection for controlled rectifiers |
| DE1764759C3 (de) * | 1968-07-31 | 1983-11-10 | Telefunken Patentverwertungsgesellschaft Mbh, 6000 Frankfurt | Verfahren zum Kontaktieren einer Halbleiterzone einer Diode |
| US3639186A (en) * | 1969-02-24 | 1972-02-01 | Ibm | Process for the production of finely etched patterns |
| BE758160A (fr) * | 1969-10-31 | 1971-04-01 | Fairchild Camera Instr Co | Structure metallique a couches multiples et procede de fabrication d'une telle structure |
| US3648125A (en) * | 1971-02-02 | 1972-03-07 | Fairchild Camera Instr Co | Method of fabricating integrated circuits with oxidized isolation and the resulting structure |
| US3808475A (en) * | 1972-07-10 | 1974-04-30 | Amdahl Corp | Lsi chip construction and method |
| US3935587A (en) * | 1974-08-14 | 1976-01-27 | Westinghouse Electric Corporation | High power, high frequency bipolar transistor with alloyed gold electrodes |
| JPS5193874A (en) * | 1975-02-15 | 1976-08-17 | Handotaisochino seizohoho | |
| DE2726667A1 (de) | 1977-06-14 | 1978-12-21 | Licentia Gmbh | Oberflaechenpassiviertes halbleiterbauelement und verfahren zum herstellen desselben |
| JPS5834945B2 (ja) * | 1980-06-02 | 1983-07-29 | 株式会社東芝 | ヒユ−ズ形prom半導体装置 |
| US4633092A (en) * | 1984-11-13 | 1986-12-30 | Eastman Kodak Company | Light sensing device |
| DE19600780B4 (de) * | 1996-01-11 | 2006-04-13 | Micronas Gmbh | Verfahren zum Kontaktieren von Bereichen mit verschiedener Dotierung in einem Halbleiterbauelement und Halbleiterbauelement |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2345122A (en) * | 1939-10-17 | 1944-03-28 | Herrmann Heinrich | Dry rectifier |
| NL89623C (mo) * | 1949-04-01 | |||
| BE503668A (mo) * | 1950-06-09 | |||
| US2680220A (en) * | 1950-06-09 | 1954-06-01 | Int Standard Electric Corp | Crystal diode and triode |
| US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| US2796562A (en) * | 1952-06-02 | 1957-06-18 | Rca Corp | Semiconductive device and method of fabricating same |
| US2713132A (en) * | 1952-10-14 | 1955-07-12 | Int Standard Electric Corp | Electric rectifying devices employing semiconductors |
| BE523682A (mo) * | 1952-10-22 | |||
| BE524233A (mo) * | 1952-11-14 | |||
| NL104654C (mo) * | 1952-12-31 | 1900-01-01 | ||
| US2798189A (en) * | 1953-04-16 | 1957-07-02 | Sylvania Electric Prod | Stabilized semiconductor devices |
| US2748325A (en) * | 1953-04-16 | 1956-05-29 | Rca Corp | Semi-conductor devices and methods for treating same |
| US2976426A (en) * | 1953-08-03 | 1961-03-21 | Rca Corp | Self-powered semiconductive device |
| BE532590A (mo) * | 1953-10-16 | 1900-01-01 | ||
| US2886748A (en) * | 1954-03-15 | 1959-05-12 | Rca Corp | Semiconductor devices |
| US2862160A (en) * | 1955-10-18 | 1958-11-25 | Hoffmann Electronics Corp | Light sensitive device and method of making the same |
| US2866140A (en) * | 1957-01-11 | 1958-12-23 | Texas Instruments Inc | Grown junction transistors |
| BE565907A (mo) * | 1957-03-22 | |||
| NL230243A (mo) * | 1957-08-07 | |||
| NL125999C (mo) * | 1958-07-17 |
-
0
- NL NL121810D patent/NL121810C/xx active
- NL NL251064D patent/NL251064A/xx unknown
-
1955
- 1955-11-04 US US544897A patent/US2858489A/en not_active Expired - Lifetime
-
1957
- 1957-12-13 GB GB38777/57A patent/GB843409A/en not_active Expired
-
1959
- 1959-05-01 US US810388A patent/US3025589A/en not_active Expired - Lifetime
-
1960
- 1960-04-26 DE DE196031082 patent/DE1197548C2/de not_active Expired
- 1960-04-26 GB GB14517/60A patent/GB947520A/en not_active Expired
- 1960-04-29 CH CH1088864A patent/CH399603A/de unknown
- 1960-04-29 CH CH492460A patent/CH384082A/de unknown
- 1960-04-29 CH CH1088964A patent/CH399604A/de unknown
- 1960-05-19 US US30256A patent/US3064167A/en not_active Expired - Lifetime
-
1966
- 1966-04-27 NL NL6605653A patent/NL6605653A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US3025589A (en) | 1962-03-20 |
| DE1197548B (mo) | 1975-02-13 |
| GB843409A (en) | 1960-08-04 |
| US3064167A (en) | 1962-11-13 |
| CH384082A (de) | 1964-11-15 |
| GB947520A (en) | 1964-01-22 |
| US2858489A (en) | 1958-10-28 |
| NL6605653A (mo) | 1966-07-25 |
| DE1197548C2 (de) | 1975-02-13 |
| CH399604A (de) | 1965-09-30 |
| CH399603A (de) | 1965-09-30 |
| NL121810C (mo) |