NL6507672A - - Google Patents
Info
- Publication number
- NL6507672A NL6507672A NL6507672A NL6507672A NL6507672A NL 6507672 A NL6507672 A NL 6507672A NL 6507672 A NL6507672 A NL 6507672A NL 6507672 A NL6507672 A NL 6507672A NL 6507672 A NL6507672 A NL 6507672A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
- H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
- H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
- H10W74/40—Encapsulations, e.g. protective coatings characterised by their materials
- H10W74/43—Encapsulations, e.g. protective coatings characterised by their materials comprising oxides, nitrides or carbides, e.g. ceramics or glasses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49082—Resistor making
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US378850A US3333326A (en) | 1964-06-29 | 1964-06-29 | Method of modifying electrical characteristic of semiconductor member |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL6507672A true NL6507672A (de) | 1965-12-30 |
Family
ID=23494800
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL6507672A NL6507672A (de) | 1964-06-29 | 1965-06-16 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US3333326A (de) |
| CH (1) | CH423022A (de) |
| DE (1) | DE1515884C3 (de) |
| NL (1) | NL6507672A (de) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508209A (en) * | 1966-03-31 | 1970-04-21 | Ibm | Monolithic integrated memory array structure including fabrication and package therefor |
| US3731375A (en) * | 1966-03-31 | 1973-05-08 | Ibm | Monolithic integrated structure including fabrication and packaging therefor |
| US3520051A (en) * | 1967-05-01 | 1970-07-14 | Rca Corp | Stabilization of thin film transistors |
| US3835530A (en) * | 1967-06-05 | 1974-09-17 | Texas Instruments Inc | Method of making semiconductor devices |
| US3653119A (en) * | 1967-12-28 | 1972-04-04 | Sprague Electric Co | Method of producing electrical capacitors |
| US3460010A (en) * | 1968-05-15 | 1969-08-05 | Ibm | Thin film decoupling capacitor incorporated in an integrated circuit chip,and process for making same |
| US3525911A (en) * | 1968-06-06 | 1970-08-25 | Westinghouse Electric Corp | Semiconductor integrated circuit including improved diode structure |
| US3574932A (en) * | 1968-08-12 | 1971-04-13 | Motorola Inc | Thin-film beam-lead resistors |
| US3534237A (en) * | 1969-01-21 | 1970-10-13 | Burroughs Corp | Power isolation of integrated circuits |
| US3629667A (en) * | 1969-03-14 | 1971-12-21 | Ibm | Semiconductor resistor with uniforms current distribution at its contact surface |
| US3674995A (en) * | 1970-08-31 | 1972-07-04 | Texas Instruments Inc | Computer controlled device testing and subsequent arbitrary adjustment of device characteristics |
| US4395293A (en) * | 1981-03-23 | 1983-07-26 | Hughes Aircraft Company | Accelerated annealing of gallium arsenide solar cells |
| US4606781A (en) * | 1984-10-18 | 1986-08-19 | Motorola, Inc. | Method for resistor trimming by metal migration |
| US4740477A (en) * | 1985-10-04 | 1988-04-26 | General Instrument Corporation | Method for fabricating a rectifying P-N junction having improved breakdown voltage characteristics |
| US4782202A (en) * | 1986-12-29 | 1988-11-01 | Mitsubishi Denki Kabushiki Kaisha | Method and apparatus for resistance adjustment of thick film thermal print heads |
| US4820657A (en) * | 1987-02-06 | 1989-04-11 | Georgia Tech Research Corporation | Method for altering characteristics of junction semiconductor devices |
| US4980315A (en) * | 1988-07-18 | 1990-12-25 | General Instrument Corporation | Method of making a passivated P-N junction in mesa semiconductor structure |
| US5166769A (en) * | 1988-07-18 | 1992-11-24 | General Instrument Corporation | Passitvated mesa semiconductor and method for making same |
| US9202964B2 (en) | 2010-03-01 | 2015-12-01 | First Solar, Inc. | System and method for photovoltaic device temperature control while conditioning a photovoltaic device |
| US8772058B2 (en) * | 2012-02-02 | 2014-07-08 | Harris Corporation | Method for making a redistributed wafer using transferrable redistribution layers |
| EP2973748B1 (de) * | 2013-03-15 | 2019-07-31 | First Solar | System und verfahren zur temperatursteuerung einer photovoltaikvorrichtung während des einrichtens der photovoltaikvorrichtung |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL91981C (de) * | 1951-08-24 | |||
| US2639246A (en) * | 1951-11-29 | 1953-05-19 | Gen Electric | Method for stabilizing semiconductor material |
| US2725317A (en) * | 1952-04-24 | 1955-11-29 | Bell Telephone Labor Inc | Method of fabricating and heat treating semiconductors |
| US2900531A (en) * | 1957-02-28 | 1959-08-18 | Rca Corp | Field-effect transistor |
| US3148129A (en) * | 1959-10-12 | 1964-09-08 | Bell Telephone Labor Inc | Metal film resistors |
| US3246173A (en) * | 1964-01-29 | 1966-04-12 | Rca Corp | Signal translating circuit employing insulated-gate field effect transistors coupledthrough a common semiconductor substrate |
-
1964
- 1964-06-29 US US378850A patent/US3333326A/en not_active Expired - Lifetime
-
1965
- 1965-06-16 NL NL6507672A patent/NL6507672A/xx unknown
- 1965-06-24 DE DE1515884A patent/DE1515884C3/de not_active Expired
- 1965-06-29 CH CH909065A patent/CH423022A/de unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE1515884A1 (de) | 1969-12-18 |
| DE1515884B2 (de) | 1973-04-12 |
| DE1515884C3 (de) | 1973-10-31 |
| US3333326A (en) | 1967-08-01 |
| CH423022A (de) | 1966-10-31 |