NL7710002A - Kleurafbeeldingsinrichting. - Google Patents
Kleurafbeeldingsinrichting.Info
- Publication number
- NL7710002A NL7710002A NL7710002A NL7710002A NL7710002A NL 7710002 A NL7710002 A NL 7710002A NL 7710002 A NL7710002 A NL 7710002A NL 7710002 A NL7710002 A NL 7710002A NL 7710002 A NL7710002 A NL 7710002A
- Authority
- NL
- Netherlands
- Prior art keywords
- color image
- image device
- color
- image
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
- H10F39/1534—Interline transfer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP51108785A JPS5941351B2 (ja) | 1976-09-13 | 1976-09-13 | カラ−用固体撮像素子 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL7710002A true NL7710002A (nl) | 1978-03-15 |
Family
ID=14493409
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL7710002A NL7710002A (nl) | 1976-09-13 | 1977-09-12 | Kleurafbeeldingsinrichting. |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4242694A (nl) |
| JP (1) | JPS5941351B2 (nl) |
| DE (1) | DE2741226C3 (nl) |
| FR (1) | FR2364578A1 (nl) |
| GB (1) | GB1573185A (nl) |
| NL (1) | NL7710002A (nl) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5419327A (en) * | 1977-07-14 | 1979-02-14 | Matsushita Electric Ind Co Ltd | Solid state pick up unit |
| US4219834A (en) * | 1977-11-11 | 1980-08-26 | International Business Machines Corporation | One-device monolithic random access memory and method of fabricating same |
| FR2433871A1 (fr) * | 1978-08-18 | 1980-03-14 | Hitachi Ltd | Dispositif de formation d'image a semi-conducteur |
| DE2939518A1 (de) * | 1979-09-28 | 1981-04-16 | Siemens AG, 1000 Berlin und 8000 München | Monolithisch integrierte schaltung zur zeilenweisen bildabtastung |
| JPS56165362A (en) * | 1980-05-26 | 1981-12-18 | Hitachi Ltd | Manufacture of solid state color image pickup element |
| JPS611964U (ja) * | 1980-10-18 | 1986-01-08 | アグフアーゲーヴエルト・アクチエンゲゼルシヤフト | 電子画像変換装置 |
| US4394675A (en) * | 1981-03-16 | 1983-07-19 | Eastman Kodak Company | Transparent asymmetric electrode structure for charge coupled device image sensor |
| US4481522A (en) * | 1982-03-24 | 1984-11-06 | Rca Corporation | CCD Imagers with substrates having drift field |
| NL8201630A (nl) * | 1982-04-20 | 1983-11-16 | Philips Nv | Inrichting ten behoeve van signaalverwerking en trefplaat voor een dergelijke inrichting. |
| US4473836A (en) * | 1982-05-03 | 1984-09-25 | Dalsa Inc. | Integrable large dynamic range photodetector element for linear and area integrated circuit imaging arrays |
| JPH0666446B2 (ja) * | 1984-03-29 | 1994-08-24 | オリンパス光学工業株式会社 | 固体撮像素子 |
| JPS6152061A (ja) * | 1984-08-22 | 1986-03-14 | Toshiba Corp | 密着型カラ−イメ−ジセンサ |
| US4807004A (en) * | 1986-11-26 | 1989-02-21 | Texas Instruments Incorporated | Tin oxide CCD imager |
| US4901129A (en) * | 1987-04-10 | 1990-02-13 | Texas Instruments Incorporated | Bulk charge modulated transistor threshold image sensor elements and method of making |
| JP2768453B2 (ja) * | 1992-03-03 | 1998-06-25 | キヤノン株式会社 | 固体撮像装置及びそれを用いた装置 |
| US5210049A (en) * | 1992-04-28 | 1993-05-11 | Eastman Kodak Company | Method of making a solid state image sensor |
| JPH0785502B2 (ja) * | 1993-01-22 | 1995-09-13 | 日本電気株式会社 | カラーリニアイメージセンサ |
| US5574659A (en) * | 1994-10-12 | 1996-11-12 | Chromax, Inc. | Dye transfer prints utilizing digital technology |
| JP3019797B2 (ja) * | 1997-02-07 | 2000-03-13 | 日本電気株式会社 | 固体撮像素子とその製造方法 |
| FR2781929B1 (fr) * | 1998-07-28 | 2002-08-30 | St Microelectronics Sa | Capteur d'image a reseau de photodiodes |
| US6252220B1 (en) | 1999-04-26 | 2001-06-26 | Xerox Corporation | Sensor cover glass with infrared filter |
| US6414342B1 (en) * | 1999-06-18 | 2002-07-02 | Micron Technology Inc. | Photogate with improved short wavelength response for a CMOS imager |
| US6768565B1 (en) | 2000-09-07 | 2004-07-27 | Xerox Corporation | Infrared correction in color scanners |
| US6316284B1 (en) | 2000-09-07 | 2001-11-13 | Xerox Corporation | Infrared correction in color scanners |
| FR2820882B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodetecteur a trois transistors |
| FR2820883B1 (fr) | 2001-02-12 | 2003-06-13 | St Microelectronics Sa | Photodiode a grande capacite |
| FR2824665B1 (fr) * | 2001-05-09 | 2004-07-23 | St Microelectronics Sa | Photodetecteur de type cmos |
| KR20040036087A (ko) * | 2002-10-23 | 2004-04-30 | 주식회사 하이닉스반도체 | 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법 |
| US6878918B2 (en) * | 2003-01-09 | 2005-04-12 | Dialdg Semiconductor Gmbh | APS pixel with reset noise suppression and programmable binning capability |
| KR100538150B1 (ko) * | 2003-12-31 | 2005-12-21 | 동부아남반도체 주식회사 | 이미지 센서 및 그 제조방법 |
| WO2006028128A1 (ja) * | 2004-09-09 | 2006-03-16 | Matsushita Electric Industrial Co., Ltd. | 固体撮像素子 |
| JP4764243B2 (ja) * | 2006-04-20 | 2011-08-31 | 株式会社東芝 | 固体撮像装置 |
| JP2008153594A (ja) * | 2006-12-20 | 2008-07-03 | Seiko Instruments Inc | イメージセンサic |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1437328A (en) * | 1972-09-25 | 1976-05-26 | Rca Corp | Sensors having recycling means |
| US4064532A (en) * | 1974-09-18 | 1977-12-20 | Sony Corporation | Solid state color camera |
| US4001878A (en) * | 1975-11-19 | 1977-01-04 | Rca Corporation | Charge transfer color imagers |
| JPS5323224A (en) * | 1976-08-16 | 1978-03-03 | Hitachi Ltd | Solid pickup unit |
-
1976
- 1976-09-13 JP JP51108785A patent/JPS5941351B2/ja not_active Expired
-
1977
- 1977-09-09 GB GB37790/77A patent/GB1573185A/en not_active Expired
- 1977-09-12 US US05/832,676 patent/US4242694A/en not_active Expired - Lifetime
- 1977-09-12 NL NL7710002A patent/NL7710002A/nl active Search and Examination
- 1977-09-13 FR FR7727564A patent/FR2364578A1/fr active Granted
- 1977-09-13 DE DE2741226A patent/DE2741226C3/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2741226C3 (de) | 1980-07-17 |
| DE2741226B2 (de) | 1979-11-08 |
| FR2364578B1 (nl) | 1982-02-26 |
| FR2364578A1 (fr) | 1978-04-07 |
| JPS5941351B2 (ja) | 1984-10-06 |
| US4242694A (en) | 1980-12-30 |
| GB1573185A (en) | 1980-08-20 |
| JPS5335322A (en) | 1978-04-01 |
| DE2741226A1 (de) | 1978-03-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| BC | A request for examination has been filed | ||
| A85 | Still pending on 85-01-01 | ||
| BN | A decision not to publish the application has become irrevocable |