NL7713457A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL7713457A
NL7713457A NL7713457A NL7713457A NL7713457A NL 7713457 A NL7713457 A NL 7713457A NL 7713457 A NL7713457 A NL 7713457A NL 7713457 A NL7713457 A NL 7713457A NL 7713457 A NL7713457 A NL 7713457A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7713457A
Other languages
English (en)
Original Assignee
Nippon Musical Instruments Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Musical Instruments Mfg filed Critical Nippon Musical Instruments Mfg
Publication of NL7713457A publication Critical patent/NL7713457A/nl

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401Combinations of FETs or IGBTs with BJTs
    • H10D84/403Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211Design considerations for internal polarisation
    • H10D89/213Design considerations for internal polarisation in field-effect devices
    • H10D89/217Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
NL7713457A 1976-12-08 1977-12-06 Halfgeleiderinrichting. NL7713457A (nl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51147253A JPS588147B2 (ja) 1976-12-08 1976-12-08 半導体集積回路装置

Publications (1)

Publication Number Publication Date
NL7713457A true NL7713457A (nl) 1978-06-12

Family

ID=15426038

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7713457A NL7713457A (nl) 1976-12-08 1977-12-06 Halfgeleiderinrichting.

Country Status (3)

Country Link
JP (1) JPS588147B2 (nl)
DE (1) DE2754734A1 (nl)
NL (1) NL7713457A (nl)

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7107040A (nl) * 1971-05-22 1972-11-24

Also Published As

Publication number Publication date
DE2754734A1 (de) 1978-06-15
JPS588147B2 (ja) 1983-02-14
JPS5371574A (en) 1978-06-26

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Legal Events

Date Code Title Description
BV The patent application has lapsed