NL7801082A - Halfgeleiderinrichting. - Google Patents

Halfgeleiderinrichting.

Info

Publication number
NL7801082A
NL7801082A NL7801082A NL7801082A NL7801082A NL 7801082 A NL7801082 A NL 7801082A NL 7801082 A NL7801082 A NL 7801082A NL 7801082 A NL7801082 A NL 7801082A NL 7801082 A NL7801082 A NL 7801082A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7801082A
Other languages
English (en)
Other versions
NL191525B (nl
NL191525C (nl
Original Assignee
Zaidan Hojin Handotai Kenkyu
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1046077A external-priority patent/JPS5396681A/ja
Priority claimed from JP52015880A external-priority patent/JPS5853517B2/ja
Priority claimed from JP1732777A external-priority patent/JPS53102661A/ja
Priority claimed from JP52019466A external-priority patent/JPS5924549B2/ja
Application filed by Zaidan Hojin Handotai Kenkyu filed Critical Zaidan Hojin Handotai Kenkyu
Publication of NL7801082A publication Critical patent/NL7801082A/nl
Priority to NL9402176A priority Critical patent/NL9402176A/nl
Publication of NL191525B publication Critical patent/NL191525B/nl
Application granted granted Critical
Publication of NL191525C publication Critical patent/NL191525C/nl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/406—Combinations of FETs or IGBTs with vertical BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs
    • H10D84/403—Combinations of FETs or IGBTs with BJTs and with one or more of diodes, resistors or capacitors
    • H10D84/409—Combinations of FETs or IGBTs with lateral BJTs and with one or more of diodes, resistors or capacitors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/211—Design considerations for internal polarisation
    • H10D89/213—Design considerations for internal polarisation in field-effect devices
    • H10D89/217—Design considerations for internal polarisation in field-effect devices comprising arrangements for charge injection in static induction transistor logic [SITL] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/011—Manufacture or treatment of isolation regions comprising dielectric materials
    • H10W10/014—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H10W10/0145—Manufacture or treatment of isolation regions comprising dielectric materials using trench refilling with dielectric materials, e.g. shallow trench isolations of trenches having shapes other than rectangular or V-shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/01—Manufacture or treatment
    • H10W10/041—Manufacture or treatment of isolation regions comprising polycrystalline semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/10—Isolation regions comprising dielectric materials
    • H10W10/17—Isolation regions comprising dielectric materials formed using trench refilling with dielectric materials, e.g. shallow trench isolations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W10/00—Isolation regions in semiconductor bodies between components of integrated devices
    • H10W10/40—Isolation regions comprising polycrystalline semiconductor materials
NL7801082A 1977-02-02 1978-01-31 Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype. NL191525C (nl)

Priority Applications (1)

Application Number Priority Date Filing Date Title
NL9402176A NL9402176A (nl) 1977-02-02 1994-12-21 Halfgeleiderinrichting.

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1046077A JPS5396681A (en) 1977-02-02 1977-02-02 Semiconductor ic
JP52015880A JPS5853517B2 (ja) 1977-02-15 1977-02-15 半導体集積回路
JP1732777A JPS53102661A (en) 1977-02-18 1977-02-18 Semiconductor ic
JP52019466A JPS5924549B2 (ja) 1977-02-24 1977-02-24 半導体論理集積回路

Publications (3)

Publication Number Publication Date
NL7801082A true NL7801082A (nl) 1978-08-04
NL191525B NL191525B (nl) 1995-04-18
NL191525C NL191525C (nl) 1995-08-21

Family

ID=27455395

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7801082A NL191525C (nl) 1977-02-02 1978-01-31 Halfgeleiderinrichting omvattende een stroomkanaalgebied van een eerste geleidingstype dat wordt omsloten door een van een stuurelektrode voorzien stuurgebied van het tweede geleidingstype.

Country Status (5)

Country Link
US (1) US4608582A (nl)
DE (1) DE2804500C2 (nl)
FR (1) FR2379913A1 (nl)
GB (1) GB1600825A (nl)
NL (1) NL191525C (nl)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1602984A (en) * 1977-05-15 1981-11-18 Zaidan Hojin Handotai Kenkyu Integrated semiconductor circuit
FR2480505A1 (fr) * 1980-04-14 1981-10-16 Thomson Csf Transistor a effet de champ a jonction de puissance a fonctionnement vertical et procede de fabrication
JPS59119848A (ja) * 1982-12-27 1984-07-11 Fujitsu Ltd 半導体装置の製造方法
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
JP2578600B2 (ja) * 1987-04-28 1997-02-05 オリンパス光学工業株式会社 半導体装置
US5066603A (en) * 1989-09-06 1991-11-19 Gte Laboratories Incorporated Method of manufacturing static induction transistors
US5126830A (en) * 1989-10-31 1992-06-30 General Electric Company Cryogenic semiconductor power devices
CA2056087C (en) * 1990-11-27 1998-01-27 Masakazu Morishita Photoelectric converting device and information processing apparatus employing the same
JP2689057B2 (ja) * 1992-09-16 1997-12-10 本田技研工業株式会社 静電誘導型半導体装置
DE4423619A1 (de) 1994-07-06 1996-01-11 Bosch Gmbh Robert Laterale Halbleiterstruktur zur Bildung einer temperaturkompensierten Spannungsbegrenzung
FR2969815B1 (fr) * 2010-12-27 2013-11-22 Soitec Silicon On Insulator Tech Procédé de fabrication d'un dispositif semi-conducteur
WO2016100521A1 (en) * 2014-12-18 2016-06-23 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale fet arrays

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US29971A (en) * 1860-09-11 Cotton-cleaner
US3409812A (en) * 1965-11-12 1968-11-05 Hughes Aircraft Co Space-charge-limited current triode device
JPS526076B1 (nl) * 1971-04-28 1977-02-18
JPS5217720B1 (nl) * 1971-07-31 1977-05-17
USRE29971E (en) 1971-07-31 1979-04-17 Zaidan Hojin Hondotai Kenkyn Shinkokai Field effect semiconductor device having an unsaturated triode vacuum tube characteristic
US3808515A (en) * 1972-11-03 1974-04-30 Bell Telephone Labor Inc Chopper devices and circuits
JPS5811102B2 (ja) 1975-12-09 1983-03-01 ザイダンホウジン ハンドウタイケンキユウシンコウカイ 半導体集積回路
JPS608628B2 (ja) 1976-07-05 1985-03-04 ヤマハ株式会社 半導体集積回路装置
US4115797A (en) * 1976-10-04 1978-09-19 Fairchild Camera And Instrument Corporation Integrated injection logic with heavily doped injector base self-aligned with injector emitter and collector

Also Published As

Publication number Publication date
FR2379913B1 (nl) 1985-02-01
GB1600825A (en) 1981-10-21
NL191525B (nl) 1995-04-18
NL191525C (nl) 1995-08-21
FR2379913A1 (fr) 1978-09-01
DE2804500A1 (de) 1978-08-03
US4608582A (en) 1986-08-26
DE2804500C2 (de) 1994-02-10

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Legal Events

Date Code Title Description
BB A search report has been drawn up
BC A request for examination has been filed
A85 Still pending on 85-01-01
V4 Discontinued because of reaching the maximum lifetime of a patent

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