NL8220133A - Gepoorte diodeschakelaar. - Google Patents

Gepoorte diodeschakelaar. Download PDF

Info

Publication number: NL8220133A
Authority: NL; Netherlands
Prior art keywords: region; terminal; regions; semiconductor body; anode
Prior art date: 1981-03-27

Application number

NL8220133A

Other languages

English (en)

Dutch (nl)

Original Assignee

Western Electric Co

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1981-03-27

Filing date

1982-03-25

Publication date

1983-02-01

1982-03-25 Application filed by Western Electric Co filed Critical Western Electric Co

1983-02-01 Publication of NL8220133A publication Critical patent/NL8220133A/nl

Links

239000004065 semiconductor Substances 0.000 claims description 37
239000012535 impurity Substances 0.000 claims description 27
238000005468 ion implantation Methods 0.000 claims description 4
101100336452 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) GDS1 gene Proteins 0.000 description 16
239000000758 substrate Substances 0.000 description 10
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
229910052782 aluminium Inorganic materials 0.000 description 5
230000003071 parasitic effect Effects 0.000 description 4
229910052581 Si3N4 Inorganic materials 0.000 description 3
230000007423 decrease Effects 0.000 description 3
230000005684 electric field Effects 0.000 description 3
235000012239 silicon dioxide Nutrition 0.000 description 3
239000000377 silicon dioxide Substances 0.000 description 3
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
230000008901 benefit Effects 0.000 description 2
230000002457 bidirectional effect Effects 0.000 description 2
239000000969 carrier Substances 0.000 description 2
230000015556 catabolic process Effects 0.000 description 2
238000000605 extraction Methods 0.000 description 2
DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
230000004888 barrier function Effects 0.000 description 1
230000005540 biological transmission Effects 0.000 description 1
230000015572 biosynthetic process Effects 0.000 description 1
230000000903 blocking effect Effects 0.000 description 1
239000003990 capacitor Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000008021 deposition Effects 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
239000000835 fiber Substances 0.000 description 1
238000002347 injection Methods 0.000 description 1
239000007924 injection Substances 0.000 description 1
238000009413 insulation Methods 0.000 description 1
230000004048 modification Effects 0.000 description 1
238000012986 modification Methods 0.000 description 1
229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
238000007747 plating Methods 0.000 description 1
238000005036 potential barrier Methods 0.000 description 1
230000004044 response Effects 0.000 description 1
230000035945 sensitivity Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1
229910052708 sodium Inorganic materials 0.000 description 1
239000011734 sodium Substances 0.000 description 1
230000001052 transient effect Effects 0.000 description 1
230000007704 transition Effects 0.000 description 1
239000012808 vapor phase Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/94—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated
- H03K17/941—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the way in which the control signals are generated using an optical detector
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/211—Gated diodes
- H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

Thyristors (AREA)
Element Separation (AREA)
Electronic Switches (AREA)

NL8220133A 1981-03-27 1982-03-25 Gepoorte diodeschakelaar. NL8220133A (nl)

Applications Claiming Priority (6)

Application Number	Priority Date	Filing Date	Title
US24819281A	1981-03-27	1981-03-27
US24820681A	1981-03-27	1981-03-27
US24820681		1981-03-27
US24819281		1981-03-27
PCT/US1982/000364 WO1982003497A1 (en)	1981-03-27	1982-03-25	Gated diode switch
US8200364		1982-03-25

Publications (1)

Publication Number	Publication Date
NL8220133A true NL8220133A (nl)	1983-02-01

Family

ID=26939179

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8220133A NL8220133A (nl)	1981-03-27	1982-03-25	Gepoorte diodeschakelaar.

Country Status (7)

Country	Link
EP (1)	EP0075589B1 (it)
JP (1)	JPS58500427A (it)
CA (1)	CA1166359A (it)
GB (1)	GB2113005B (it)
IT (1)	IT1151525B (it)
NL (1)	NL8220133A (it)
WO (1)	WO1982003497A1 (it)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5017999A (en) *	1989-06-30	1991-05-21	Honeywell Inc.	Method for forming variable width isolation structures

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS4933432B1 (it) *	1968-12-20	1974-09-06
US3870904A (en) *	1973-05-21	1975-03-11	Mayfran Inc	Circuit for controlling a thyristor by direct current logic
US3911463A (en) *	1974-01-07	1975-10-07	Gen Electric	Planar unijunction transistor
US4146905A (en) *	1974-06-18	1979-03-27	U.S. Philips Corporation	Semiconductor device having complementary transistor structures and method of manufacturing same
US4016433A (en) *	1976-01-23	1977-04-05	Rca Corporation	GTO circuits
US4060821A (en) *	1976-06-21	1977-11-29	General Electric Co.	Field controlled thyristor with buried grid
WO1980001337A1 (en) *	1978-12-20	1980-06-26	Western Electric Co	High voltage dielectrically isolated solid-state switch

1982
- 1982-03-25 JP JP57501404A patent/JPS58500427A/ja active Pending
- 1982-03-25 NL NL8220133A patent/NL8220133A/nl unknown
- 1982-03-25 EP EP82901270A patent/EP0075589B1/en not_active Expired
- 1982-03-25 WO PCT/US1982/000364 patent/WO1982003497A1/en not_active Ceased
- 1982-03-25 GB GB08233292A patent/GB2113005B/en not_active Expired
- 1982-03-25 IT IT20400/82A patent/IT1151525B/it active
- 1982-03-26 CA CA000399478A patent/CA1166359A/en not_active Expired

Also Published As

Publication number	Publication date
IT1151525B (it)	1986-12-24
EP0075589A1 (en)	1983-04-06
IT8220400A0 (it)	1982-03-25
GB2113005A (en)	1983-07-27
CA1166359A (en)	1984-04-24
EP0075589B1 (en)	1987-01-14
JPS58500427A (ja)	1983-03-17
GB2113005B (en)	1985-05-09
WO1982003497A1 (en)	1982-10-14
EP0075589A4 (en)	1984-02-15

Publication	Publication Date	Title
US4742380A (en)	1988-05-03	Switch utilizing solid-state relay
EP0226395B1 (en)	1994-07-27	Solid state relay having a thyristor discharge circuit
US4743952A (en)	1988-05-10	Insulated-gate semiconductor device with low on-resistance
US5319222A (en)	1994-06-07	MOS gated thyristor having on-state current saturation capability
US4356503A (en)	1982-10-26	Latching transistor
JPH0117268B2 (it)	1989-03-29
US3408511A (en)	1968-10-29	Chopper circuit capable of handling large bipolarity signals
CA1191969A (en)	1985-08-13	Solid-state relay
US5241194A (en)	1993-08-31	Base resistance controlled thyristor with integrated single-polarity gate control
NL8220133A (nl)	1983-02-01	Gepoorte diodeschakelaar.
US4250409A (en)	1981-02-10	Control circuitry using a pull-down transistor for high voltage field terminated diode solid-state switches
CA1190327A (en)	1985-07-09	Gated diode switching devices
US4587545A (en)	1986-05-06	High voltage dielectrically isolated remote gate solid-state switch
GB2054955A (en)	1981-02-18	Monolithic integrated CMOS circuit
US4214255A (en)	1980-07-22	Gate turn-off triac with dual low conductivity regions contacting central gate region
JPH0126190B2 (it)	1989-05-22
JPS6412106B2 (it)	1989-02-28
EP0638204A1 (en)	1995-02-15	Base resistance controlled mos gated thyristor with improved turn-off characteristics
US4275308A (en)	1981-06-23	Optically toggled device
JPH0261181B2 (it)	1990-12-19
KR850002833Y1 (ko)	1985-11-25	고전압 고체 스위치용 제어회로
US4340827A (en)	1982-07-20	Semiconductor integrated circuit
JP3115716B2 (ja)	2000-12-11	半導体装置
NL7920198A (nl)	1980-10-31	Regelschakeling voor een van een poort voorziene diodeschakelaars.
IE48719B1 (en)	1985-05-01	Solid-state switching device