NL8303602A - Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen. - Google Patents

Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen. Download PDF

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Publication number
NL8303602A
NL8303602A NL8303602A NL8303602A NL8303602A NL 8303602 A NL8303602 A NL 8303602A NL 8303602 A NL8303602 A NL 8303602A NL 8303602 A NL8303602 A NL 8303602A NL 8303602 A NL8303602 A NL 8303602A
Authority
NL
Netherlands
Prior art keywords
electrode
housing
plates
electrode plates
substrate support
Prior art date
Application number
NL8303602A
Other languages
English (en)
Dutch (nl)
Original Assignee
Johannes Hendrikus Leonardus H
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Johannes Hendrikus Leonardus H filed Critical Johannes Hendrikus Leonardus H
Priority to NL8303602A priority Critical patent/NL8303602A/nl
Priority to EP84201441A priority patent/EP0143479A1/de
Publication of NL8303602A publication Critical patent/NL8303602A/nl

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/10—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof using carriers specially adapted therefor, e.g. front opening unified pods [FOUP]
    • H10P72/12—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
    • H10P72/127—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements characterised by the substrate support
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
NL8303602A 1983-10-19 1983-10-19 Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen. NL8303602A (nl)

Priority Applications (2)

Application Number Priority Date Filing Date Title
NL8303602A NL8303602A (nl) 1983-10-19 1983-10-19 Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen.
EP84201441A EP0143479A1 (de) 1983-10-19 1984-10-09 Vorrichtung zur Plasma aktivierten chemischen Dampfphasenabscheidung insbesondere Einrichtung als Substratträger und Elektrode und ähnliche Bestandteile

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL8303602A NL8303602A (nl) 1983-10-19 1983-10-19 Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen.
NL8303602 1983-10-19

Publications (1)

Publication Number Publication Date
NL8303602A true NL8303602A (nl) 1985-05-17

Family

ID=19842585

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8303602A NL8303602A (nl) 1983-10-19 1983-10-19 Plasma-gestimuleerde chemische opdampinrichting en in het bijzonder een substratenondersteunings- en elektrodeopstelling daarvoor en de betreffende onderdelen.

Country Status (2)

Country Link
EP (1) EP0143479A1 (de)
NL (1) NL8303602A (de)

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* Cited by examiner, † Cited by third party
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KR910003742B1 (ko) * 1986-09-09 1991-06-10 세미콘덕터 에너지 라보라터리 캄파니 리미티드 Cvd장치
US4799451A (en) * 1987-02-20 1989-01-24 Asm America, Inc. Electrode boat apparatus for processing semiconductor wafers or the like
US4781874A (en) * 1987-10-23 1988-11-01 Eaton Corporation Process for making silicon nitride articles
JPH05209279A (ja) * 1991-10-29 1993-08-20 Canon Inc 金属膜形成装置および金属膜形成法
DE19808206A1 (de) * 1998-02-27 1999-09-02 Gesche Waferbehandlung
WO2002020871A1 (de) * 2000-09-08 2002-03-14 Centrotherm Elektrische Anlagen Gmbh + Co. Plasmaboot
DE102008019023B4 (de) * 2007-10-22 2009-09-24 Centrotherm Photovoltaics Ag Vakuum-Durchlaufanlage zur Prozessierung von Substraten
WO2015117991A1 (de) * 2014-02-06 2015-08-13 Kgt Graphit Technologie Gmbh Schutzschicht für pecvd-boote aus graphit
EP2915901B1 (de) 2014-03-07 2019-02-27 Meyer Burger (Germany) AG Vorrichtung zur Plasmaprozessierung mit Prozessgaszirkulation in multiplen Plasmen
TWI481737B (zh) * 2014-08-20 2015-04-21 Powerchip Technology Corp 承載治具
DE102015111144A1 (de) * 2015-07-09 2017-01-12 Hanwha Q.CELLS GmbH Vorrichtung zur paarweisen Aufnahme von Substraten
HUE047152T2 (hu) 2017-02-28 2020-04-28 Meyer Burger Germany Gmbh Elektródegység belsõ villamos hálózattal nagyfrekvenciás feszültség hozzávezetésére és tartószerkezet plazmakezelõ berendezéshez
CN109082649A (zh) * 2018-09-06 2018-12-25 深圳市捷佳伟创新能源装备股份有限公司 一种稳定镀膜的载片装置
DE102019002647A1 (de) * 2019-04-10 2020-10-15 Plasmetrex Gmbh Waferboot und Behandlungsvorrichtung für Wafer
KR102552458B1 (ko) 2019-07-31 2023-07-06 가부시키가이샤 코쿠사이 엘렉트릭 기판 처리 장치, 기판 지지구 및 반도체 장치의 제조 방법
JP7016920B2 (ja) * 2019-07-31 2022-02-07 株式会社Kokusai Electric 基板処理装置、基板支持具、半導体装置の製造方法および基板処理方法
US20230018842A1 (en) * 2020-01-09 2023-01-19 Nordson Corporation Workpiece support system for plasma treatment and method of using the same
CN113130359B (zh) * 2021-04-09 2025-01-10 深圳市捷佳伟创新能源装备股份有限公司 托盘以及载片装置
CN118407025A (zh) * 2024-05-17 2024-07-30 重庆欣晖材料技术有限公司 一种用于化学气相沉积的组件、装备及承载装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1522059A (en) * 1976-10-19 1978-08-23 Standard Telephones Cables Ltd Plasma etching
JPS53112066A (en) * 1977-03-11 1978-09-30 Fujitsu Ltd Plasma treatment apparatus
US4264393A (en) * 1977-10-31 1981-04-28 Motorola, Inc. Reactor apparatus for plasma etching or deposition
US4223048A (en) * 1978-08-07 1980-09-16 Pacific Western Systems Plasma enhanced chemical vapor processing of semiconductive wafers
JPS5846057B2 (ja) * 1979-03-19 1983-10-14 富士通株式会社 プラズマ処理方法
US4287851A (en) * 1980-01-16 1981-09-08 Dozier Alfred R Mounting and excitation system for reaction in the plasma state

Also Published As

Publication number Publication date
EP0143479A1 (de) 1985-06-05

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