NL8304008A - Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling. - Google Patents

Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling. Download PDF

Info

Publication number: NL8304008A
Authority: NL; Netherlands
Prior art keywords: semiconductor; active; semiconductor material; active region; semiconductor device
Prior art date: 1983-11-22

Application number

NL8304008A

Other languages

English (en)

Dutch (nl)

Original Assignee

Philips Nv

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1983-11-22

Filing date

1983-11-22

Publication date

1985-06-17

1983-11-22 Application filed by Philips Nv filed Critical Philips Nv

1983-11-22 Priority to NL8304008A priority Critical patent/NL8304008A/nl

1984-11-10 Priority to DE19843441201 priority patent/DE3441201A1/de

1984-11-13 Priority to AU35374/84A priority patent/AU3537484A/en

1984-11-14 Priority to US06/671,390 priority patent/US4644553A/en

1984-11-19 Priority to GB08429171A priority patent/GB2150350B/en

1984-11-19 Priority to IT23650/84A priority patent/IT1177256B/it

1984-11-19 Priority to ES537758A priority patent/ES537758A0/es

1984-11-20 Priority to FR8417668A priority patent/FR2555370A1/fr

1984-11-21 Priority to JP59244684A priority patent/JPS60192381A/ja

1984-11-22 Priority to CA000468451A priority patent/CA1241421A/en

1985-06-17 Publication of NL8304008A publication Critical patent/NL8304008A/nl

Links

239000004065 semiconductor Substances 0.000 title claims description 80
230000005670 electromagnetic radiation Effects 0.000 title claims description 8
239000000463 material Substances 0.000 claims description 45
230000005855 radiation Effects 0.000 claims description 20
230000004888 barrier function Effects 0.000 claims description 16
229910005540 GaP Inorganic materials 0.000 claims description 13
HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 claims description 13
IHGSAQHSAGRWNI-UHFFFAOYSA-N 1-(4-bromophenyl)-2,2,2-trifluoroethanone Chemical compound FC(F)(F)C(=O)C1=CC=C(Br)C=C1 IHGSAQHSAGRWNI-UHFFFAOYSA-N 0.000 claims description 12
230000007850 degeneration Effects 0.000 claims description 5
238000005215 recombination Methods 0.000 claims description 5
230000006798 recombination Effects 0.000 claims description 5
239000010410 layer Substances 0.000 description 69
239000002800 charge carrier Substances 0.000 description 18
230000000694 effects Effects 0.000 description 9
230000007704 transition Effects 0.000 description 7
238000000034 method Methods 0.000 description 6
239000000758 substrate Substances 0.000 description 5
239000011149 active material Substances 0.000 description 4
125000005842 heteroatom Chemical group 0.000 description 4
238000002347 injection Methods 0.000 description 4
239000007924 injection Substances 0.000 description 4
230000008569 process Effects 0.000 description 4
238000005530 etching Methods 0.000 description 3
238000001451 molecular beam epitaxy Methods 0.000 description 3
239000011241 protective layer Substances 0.000 description 3
JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
229910052782 aluminium Inorganic materials 0.000 description 2
XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
MDPILPRLPQYEEN-UHFFFAOYSA-N aluminium arsenide Chemical compound [As]#[Al] MDPILPRLPQYEEN-UHFFFAOYSA-N 0.000 description 2
230000008901 benefit Effects 0.000 description 2
239000000969 carrier Substances 0.000 description 2
238000000576 coating method Methods 0.000 description 2
239000004020 conductor Substances 0.000 description 2
229910052733 gallium Inorganic materials 0.000 description 2
238000013139 quantization Methods 0.000 description 2
229910000951 Aluminide Inorganic materials 0.000 description 1
229910052582 BN Inorganic materials 0.000 description 1
PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
241000735495 Erica <angiosperm> Species 0.000 description 1
229910002601 GaN Inorganic materials 0.000 description 1
229910001218 Gallium arsenide Inorganic materials 0.000 description 1
JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
229910052581 Si3N4 Inorganic materials 0.000 description 1
VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
230000009471 action Effects 0.000 description 1
238000006243 chemical reaction Methods 0.000 description 1
238000005229 chemical vapour deposition Methods 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
230000001427 coherent effect Effects 0.000 description 1
150000001875 compounds Chemical class 0.000 description 1
239000000356 contaminant Substances 0.000 description 1
238000010586 diagram Methods 0.000 description 1
238000009792 diffusion process Methods 0.000 description 1
238000000407 epitaxy Methods 0.000 description 1
230000004907 flux Effects 0.000 description 1
239000012535 impurity Substances 0.000 description 1
230000003993 interaction Effects 0.000 description 1
235000015110 jellies Nutrition 0.000 description 1
239000008274 jelly Substances 0.000 description 1
238000004519 manufacturing process Methods 0.000 description 1
230000007246 mechanism Effects 0.000 description 1
239000000203 mixture Substances 0.000 description 1
150000004767 nitrides Chemical class 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
239000012074 organic phase Substances 0.000 description 1
239000002245 particle Substances 0.000 description 1
238000002360 preparation method Methods 0.000 description 1
238000004064 recycling Methods 0.000 description 1
238000006748 scratching Methods 0.000 description 1
230000002393 scratching effect Effects 0.000 description 1
HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
229910052814 silicon oxide Inorganic materials 0.000 description 1
239000000243 solution Substances 0.000 description 1
238000001228 spectrum Methods 0.000 description 1

Classifications

- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
- H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
- H01S5/0424—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer lateral current injection
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/227—Buried mesa structure ; Striped active layer
- H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3428—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers layer orientation perpendicular to the substrate

Landscapes

Physics & Mathematics (AREA)
Optics & Photonics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Electromagnetism (AREA)
Engineering & Computer Science (AREA)
Chemical & Material Sciences (AREA)
Nanotechnology (AREA)
Life Sciences & Earth Sciences (AREA)
Biophysics (AREA)
Geometry (AREA)
Crystallography & Structural Chemistry (AREA)
Semiconductor Lasers (AREA)

NL8304008A 1983-11-22 1983-11-22 Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling. NL8304008A (nl)

Priority Applications (10)

Application Number	Priority Date	Filing Date	Title
NL8304008A NL8304008A (nl)	1983-11-22	1983-11-22	Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling.
DE19843441201 DE3441201A1 (de)	1983-11-22	1984-11-10	Halbleiteranordnung zum erzeugen elektromagnetischer strahlung
AU35374/84A AU3537484A (en)	1983-11-22	1984-11-13	Semiconductor device for producing electromagnetic radiation
US06/671,390 US4644553A (en)	1983-11-22	1984-11-14	Semiconductor laser with lateral injection
GB08429171A GB2150350B (en)	1983-11-22	1984-11-19	Semiconductor device for producing electromagnetic radiation
IT23650/84A IT1177256B (it)	1983-11-22	1984-11-19	Dispositivo semiconduttore per la produzione di radiazioni elettromagnetiche
ES537758A ES537758A0 (es)	1983-11-22	1984-11-19	Un dispositivo semiconductor para producir radiacion electromagnetica en la zona activa semiconductora en forma de capa
FR8417668A FR2555370A1 (fr)	1983-11-22	1984-11-20	Dispositif semi-conducteur servant a engendrer du rayonnement electromagnetique
JP59244684A JPS60192381A (ja)	1983-11-22	1984-11-21	電磁放射発生用半導体装置
CA000468451A CA1241421A (en)	1983-11-22	1984-11-22	Semiconductor laser with lateral injection

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8304008A NL8304008A (nl)	1983-11-22	1983-11-22	Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling.
NL8304008		1983-11-22

Publications (1)

Publication Number	Publication Date
NL8304008A true NL8304008A (nl)	1985-06-17

Family

ID=19842752

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8304008A NL8304008A (nl)	1983-11-22	1983-11-22	Halfgeleiderinrichting voor het opwekken van elektro-magnetische straling.

Country Status (10)

Country	Link
US (1)	US4644553A (de)
JP (1)	JPS60192381A (de)
AU (1)	AU3537484A (de)
CA (1)	CA1241421A (de)
DE (1)	DE3441201A1 (de)
ES (1)	ES537758A0 (de)
FR (1)	FR2555370A1 (de)
GB (1)	GB2150350B (de)
IT (1)	IT1177256B (de)
NL (1)	NL8304008A (de)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPS61190980A (ja) *	1985-02-19	1986-08-25	Canon Inc	半導体装置
JPS61244086A (ja) *	1985-04-22	1986-10-30	Sharp Corp	半導体レ−ザ素子
US4881235A (en) *	1985-07-26	1989-11-14	Hitachi, Ltd.	Semiconductor laser having a multiple quantum well structure doped with impurities
JPS6267890A (ja) *	1985-09-20	1987-03-27	Hitachi Ltd	半導体レ−ザ
JPS62188295A (ja) *	1986-02-13	1987-08-17	Sharp Corp	半導体レ−ザ素子
US4941025A (en) *	1987-12-30	1990-07-10	Bell Communications Research, Inc.	Quantum well semiconductor structures for infrared and submillimeter light sources
JPH0775265B2 (ja) *	1988-02-02	1995-08-09	三菱電機株式会社	半導体レーザおよびその製造方法
US5045894A (en) *	1988-06-29	1991-09-03	Hitachi, Ltd.	Compound semiconductor light emitting device
US5003548A (en) *	1988-09-21	1991-03-26	Cornell Research Foundation, Inc.	High power (1,4 W)AlGaInP graded-index separate confinement heterostructure visible (λ-658 nm) laser
EP0360011B1 (de) *	1988-09-22	1994-02-16	Siemens Aktiengesellschaft	Abstimmbarer DFB-Laser
US4943970A (en) *	1988-10-24	1990-07-24	General Dynamics Corporation, Electronics Division	Surface emitting laser
US4901327A (en) *	1988-10-24	1990-02-13	General Dynamics Corporation, Electronics Division	Transverse injection surface emitting laser
US4873696A (en) *	1988-10-31	1989-10-10	The Regents Of The University Of California	Surface-emitting lasers with periodic gain and a parallel driven nipi structure
US4933302A (en) *	1989-04-19	1990-06-12	International Business Machines Corporation	Formation of laser mirror facets and integration of optoelectronics
US5075743A (en) *	1989-06-06	1991-12-24	Cornell Research Foundation, Inc.	Quantum well optical device on silicon
US4965806A (en) *	1989-06-15	1990-10-23	The United States Of America As Represented By The United States Department Of Energy	Semiconductor laser devices having lateral refractive index tailoring
JPH03151684A (ja) *	1989-11-08	1991-06-27	Mitsubishi Electric Corp	多波長集積化半導体レーザの製造方法
JPH03208388A (ja) *	1990-01-09	1991-09-11	Nec Corp	半導体レーザ及びその製造方法と不純物拡散方法
US5079774A (en) *	1990-12-27	1992-01-07	International Business Machines Corporation	Polarization-tunable optoelectronic devices
US6528829B1 (en) *	1999-03-25	2003-03-04	Trw Inc.	Integrated circuit structure having a charge injection barrier
US7535031B2 (en) *	2005-09-13	2009-05-19	Philips Lumiled Lighting, Co. Llc	Semiconductor light emitting device with lateral current injection in the light emitting region
TW200737626A (en) *	2005-11-14	2007-10-01	Applied Materials Inc	Semiconductor device having a laterally injected active region
US8421057B2 (en) *	2010-06-25	2013-04-16	Invenlux Corporation	Light-emitting devices with improved active-region
JP6244668B2 (ja) *	2013-05-31	2017-12-13	住友電気工業株式会社	量子カスケードレーザ
JP6244667B2 (ja) *	2013-05-31	2017-12-13	住友電気工業株式会社	量子カスケードレーザ
DE102015104665B4 (de)	2015-03-26	2025-10-30	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Optoelektronischer Halbleiterkörper und Verfahren zur Herstellung eines optoelektronischen Halbleiterkörpers
DE102016208717B4 (de)	2016-05-20	2022-03-24	OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung	Bauelement mit erhöhter Effizienz und Verfahren zur Herstellung eines Bauelements
CN106253055B (zh) *	2016-08-26	2019-08-20	武汉光迅科技股份有限公司	一种基于侧向p-i-n结构的电吸收激光器及其制造方法
US10355453B2 (en)	2017-11-08	2019-07-16	International Business Machines Corporation	Electro-optical device with lateral electron blocking layer
JP6947113B2 (ja) *	2018-04-23	2021-10-13	日本電信電話株式会社	半導体光素子
TWI907926B (zh)	2020-05-19	2025-12-11	美商谷歌有限責任公司	以側壁孔注入增強之基於量子井之led結構

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3983509A (en) *	1975-04-25	1976-09-28	Xerox Corporation	Distributed feedback diode laser
US4365260A (en) *	1978-10-13	1982-12-21	University Of Illinois Foundation	Semiconductor light emitting device with quantum well active region of indirect bandgap semiconductor material
JPS57176785A (en) *	1981-04-22	1982-10-30	Hitachi Ltd	Semiconductor laser device
DE3279014D1 (en) *	1981-06-11	1988-10-13	Honeywell Inc	Electro-optic element and method of making the same
JPS58225680A (ja) *	1982-06-23	1983-12-27	Nec Corp	半導体レ−ザ
JPS5923584A (ja) *	1982-07-29	1984-02-07	Nec Corp	半導体レ−ザ
JPS5929484A (ja) *	1982-08-12	1984-02-16	Fujitsu Ltd	半導体発光装置

1983
- 1983-11-22 NL NL8304008A patent/NL8304008A/nl not_active Application Discontinuation
1984
- 1984-11-10 DE DE19843441201 patent/DE3441201A1/de not_active Withdrawn
- 1984-11-13 AU AU35374/84A patent/AU3537484A/en not_active Abandoned
- 1984-11-14 US US06/671,390 patent/US4644553A/en not_active Expired - Fee Related
- 1984-11-19 IT IT23650/84A patent/IT1177256B/it active
- 1984-11-19 ES ES537758A patent/ES537758A0/es active Granted
- 1984-11-19 GB GB08429171A patent/GB2150350B/en not_active Expired
- 1984-11-20 FR FR8417668A patent/FR2555370A1/fr active Pending
- 1984-11-21 JP JP59244684A patent/JPS60192381A/ja active Pending
- 1984-11-22 CA CA000468451A patent/CA1241421A/en not_active Expired

Also Published As

Publication number	Publication date
GB2150350A (en)	1985-06-26
IT1177256B (it)	1987-08-26
JPS60192381A (ja)	1985-09-30
FR2555370A1 (fr)	1985-05-24
IT8423650A0 (it)	1984-11-19
DE3441201A1 (de)	1985-05-30
CA1241421A (en)	1988-08-30
US4644553A (en)	1987-02-17
IT8423650A1 (it)	1986-05-19
GB8429171D0 (en)	1984-12-27
AU3537484A (en)	1986-09-11
GB2150350B (en)	1987-07-08
ES8601580A1 (es)	1985-10-16
ES537758A0 (es)	1985-10-16

Legal Events

Date	Code	Title	Description
1985-06-17	A1B	A search report has been drawn up
1990-07-02	BV	The patent application has lapsed

Publication	Publication Date	Title
US4644553A (en)	1987-02-17	Semiconductor laser with lateral injection
US5457709A (en)	1995-10-10	Unipolar semiconductor laser
US5509025A (en)	1996-04-16	Unipolar semiconductor laser
DE69104342T2 (de)	1995-02-16	Oberflächenemittierende Laser mit vertikalem Resonator und transparenter Elektrode.
US5570386A (en)	1996-10-29	Semiconductor laser
KR960008181B1 (ko)	1996-06-20	적외선 방사 검출 장치 및 그 방법
USRE36802E (en)	2000-08-01	Transverse electric (TE) polarization mode AlGaInP/GaAs red laser diodes, especially with self-pulsating operation
EP2220733B1 (de)	2018-10-10	Laserlichtquelle
US6751244B2 (en)	2004-06-15	Quantum cascade laser with optical phonon excitation
CA2331929C (en)	2009-12-22	Quantum dot tunable external cavity lasers (qd-tec lasers)
CA2348005C (en)	2005-01-11	Flat minibands with spatially symmetric wavefunctions in intersubband superlattice light emitters
US4791648A (en)	1988-12-13	Laser having a substantially planar waveguide
US20040013145A1 (en)	2004-01-22	Quantum cascade laser
JP3159946B2 (ja)	2001-04-23	量子カスケードレーザを有する物品
US4861976A (en)	1989-08-29	Optical or opto-electronic device having a trapping layer in contact with a semiconductive layer
Wegscheider et al.	1995	GaAs/AlGaAs quantum wire lasers fabricated by cleaved edge overgrowth
JPH11340586A (ja)	1999-12-10	改良型超格子量子カスケ―ドレ―ザから成る物品
JP3223047B2 (ja)	2001-10-29	量子細線レーザ
JPH09179080A (ja)	1997-07-11	光デバイス
Hvam	2019	Optoelectronic properties and applications of quantum dots
RU2047935C1 (ru)	1995-11-10	Полупроводниковый лазер с оптической накачкой
JP3648357B2 (ja)	2005-05-18	半導体レーザ素子の製造方法
DE102021104343A1 (de)	2022-08-25	Halbleiteremitter
NL9301981A (nl)	1994-06-16	Zichtbaar licht vormende halfgeleider laser.
Deppe et al.	1998	Extended wavelength (1.0 to 1.3 μm) InGaAs/GaAs quantum dot GaAs-based vertical-cavity surface-emitting and lateral-cavity edge-emitting lasers