NL8400010A - Schakelaar voor radio frequente signalen. - Google Patents

Schakelaar voor radio frequente signalen. Download PDF

Info

Publication number
NL8400010A
NL8400010A NL8400010A NL8400010A NL8400010A NL 8400010 A NL8400010 A NL 8400010A NL 8400010 A NL8400010 A NL 8400010A NL 8400010 A NL8400010 A NL 8400010A NL 8400010 A NL8400010 A NL 8400010A
Authority
NL
Netherlands
Prior art keywords
switch
switching
diode
capacitor
transistor
Prior art date
Application number
NL8400010A
Other languages
English (en)
Dutch (nl)
Original Assignee
Tadiran Israel Elect Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadiran Israel Elect Ind Ltd filed Critical Tadiran Israel Elect Ind Ltd
Publication of NL8400010A publication Critical patent/NL8400010A/nl

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/74Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/60Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors
    • H03K17/68Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being bipolar transistors specially adapted for switching AC currents or voltages
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/72Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region
    • H03K17/725Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices having more than two PN junctions; having more than three electrodes; having more than one electrode connected to the same conductivity region for AC voltages or currents

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electronic Switches (AREA)
  • Ac-Ac Conversion (AREA)
  • Rectifiers (AREA)
NL8400010A 1983-05-11 1984-01-03 Schakelaar voor radio frequente signalen. NL8400010A (nl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
IL6865983 1983-05-11
IL68659A IL68659A0 (en) 1983-05-11 1983-05-11 Rf power switches

Publications (1)

Publication Number Publication Date
NL8400010A true NL8400010A (nl) 1984-12-03

Family

ID=11054252

Family Applications (1)

Application Number Title Priority Date Filing Date
NL8400010A NL8400010A (nl) 1983-05-11 1984-01-03 Schakelaar voor radio frequente signalen.

Country Status (8)

Country Link
US (1) US4673831A (it)
BE (1) BE899586A (it)
DE (1) DE3401091A1 (it)
FR (1) FR2546007B1 (it)
GB (1) GB2139835B (it)
IL (1) IL68659A0 (it)
IT (1) IT1173869B (it)
NL (1) NL8400010A (it)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3612732A1 (de) * 1986-04-16 1987-10-29 Blaupunkt Werke Gmbh Anordnung zum schalten von hochfrequenten signalen
EP0300261A1 (de) * 1987-07-17 1989-01-25 Siemens Aktiengesellschaft PIN-Dioden-Schalter
DE4016640C2 (de) * 1990-05-23 1996-02-22 Siemens Ag Sende-Empfangs-Weiche mit PIN-Diode
DE4016641C1 (it) * 1990-05-23 1991-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
US5206639A (en) * 1990-10-25 1993-04-27 Timex Corporation Single antenna dual frequency transponder
US5231273A (en) * 1991-04-09 1993-07-27 Comtec Industries Inventory management system
US5212408A (en) * 1992-02-06 1993-05-18 Ael Defense Corp. Ultra fast pin diode switch
ES2056733B1 (es) * 1993-01-28 1997-07-01 Consejo Superior Investigacion Sistema de conmutacion analogica bidireccional rapida para pulsos af de alta potencia instantanea.
US5592031A (en) * 1993-01-28 1997-01-07 Consejo Superior Investigaciones Cientificas Fast bidirectional analog switching system for HF pulses of high instantaneous power
US6900711B2 (en) 2002-09-30 2005-05-31 Agilent Technologies, Inc. Switching system
DE10305361B4 (de) * 2003-02-10 2008-07-31 Rohde & Schwarz Gmbh & Co. Kg Elektronischer Hochfrequenz-Schalter
EP1626493A1 (fr) * 2004-08-11 2006-02-15 Stmicroelectronics Sa Circuit d'alimentation capacitive
JP2007049309A (ja) * 2005-08-08 2007-02-22 Nec Electronics Corp スイッチ回路
US8461964B2 (en) * 2007-10-12 2013-06-11 Commscope, Inc. Of North Carolina Communications patching systems with radio frequency identification antenna switching circuits
US8125007B2 (en) * 2009-11-20 2012-02-28 International Business Machines Corporation Integrated circuit including FinFET RF switch angled relative to planar MOSFET and related design structure
US8816857B2 (en) 2010-10-20 2014-08-26 Panduit Corp. RFID system
US9418256B2 (en) 2010-10-20 2016-08-16 Panduit Corp. RFID system
JP6292447B2 (ja) * 2013-06-07 2018-03-14 パナソニックIpマネジメント株式会社 送受信切替装置
US20160241231A1 (en) * 2015-02-17 2016-08-18 Infineon Technologies Ag RF Switch

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2816238A (en) * 1955-08-18 1957-12-10 Gen Dynamics Corp Electronic switches
US3027524A (en) * 1959-08-21 1962-03-27 Bell Telephone Labor Inc Signal transmission gate
US3146357A (en) * 1962-02-23 1964-08-25 Sanders Associates Inc High frequency solid state switch employing diodes with shiftable bias to control signal transmission
GB1004754A (en) * 1962-12-27 1965-09-15 Adage Inc Control circuits for electronic switches
US3227954A (en) * 1963-05-07 1966-01-04 Jr Walter C Fichter Transmit-receive switching circuit utilizing diodes
FR1402939A (fr) * 1964-04-13 1965-06-18 Ibm France Dispositif de commutation à diodes
US3327215A (en) * 1964-09-18 1967-06-20 Motorola Inc Electronic circuit for selectively connecting a transmitter and a receiver to a single antenna
US3454791A (en) * 1966-01-11 1969-07-08 Us Navy Radio frequency switch circuit with high decibel isolation
US3504199A (en) * 1966-08-16 1970-03-31 Rca Corp Square wave generator comprising back-to-back series-connected charge storage diodes
NL6616834A (it) * 1966-11-30 1968-05-31
US3593205A (en) * 1969-05-05 1971-07-13 Alpha Ind Inc Single pole n-throw microwave switch
DE2212564C3 (de) * 1971-04-06 1981-07-23 Società Italiana Telecomunicazioni Siemens S.p.A., 20149 Milano Elektronische Schalteranordnung für Videosignale
US4056792A (en) * 1975-11-11 1977-11-01 Westinghouse Electric Corporation Wideband diode switched microwave phase shifter network
DE3032290A1 (de) * 1979-09-11 1981-03-26 Borg-Warner Corp., Chicago, Ill. Halbleiterschalteinrichtung zur steuerung der abgabe einer gleichspannung an eine last
JPS5928295B2 (ja) * 1979-12-24 1984-07-12 株式会社 日立メディコ 超音波振動子励振用スイツチ回路
US4492937A (en) * 1982-10-29 1985-01-08 Rca Corporation Terminated switch

Also Published As

Publication number Publication date
DE3401091A1 (de) 1984-11-15
US4673831A (en) 1987-06-16
FR2546007A1 (fr) 1984-11-16
IL68659A0 (en) 1983-09-30
IT8420102A0 (it) 1984-03-16
FR2546007B1 (fr) 1992-08-21
IT1173869B (it) 1987-06-24
BE899586A (fr) 1984-08-31
GB2139835A (en) 1984-11-14
GB2139835B (en) 1987-03-04
GB8400303D0 (en) 1984-02-08

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Legal Events

Date Code Title Description
A85 Still pending on 85-01-01
BT A notification was added to the application dossier and made available to the public
BA A request for search or an international-type search has been filed
BB A search report has been drawn up
BC A request for examination has been filed
BV The patent application has lapsed