NL8501501A - Foto-elektrische omzetter. - Google Patents

Foto-elektrische omzetter. Download PDF

Info

Publication number: NL8501501A
Authority: NL; Netherlands
Prior art keywords: electrodes; radiation; region; incident; electrode
Prior art date: 1985-05-24

Application number

NL8501501A

Other languages

English (en)

Dutch (nl)

Original Assignee

Tno

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1985-05-24

Filing date

1985-05-24

Publication date

1986-12-16

1985-05-24 Application filed by Tno filed Critical Tno

1985-05-24 Priority to NL8501501A priority Critical patent/NL8501501A/nl

1986-05-21 Priority to US06/865,531 priority patent/US4760436A/en

1986-05-22 Priority to EP86200895A priority patent/EP0203667A1/fr

1986-05-26 Priority to CA000509955A priority patent/CA1264367A/fr

1986-12-16 Publication of NL8501501A publication Critical patent/NL8501501A/nl

Links

230000005855 radiation Effects 0.000 claims description 54
238000005259 measurement Methods 0.000 claims description 14
231100000289 photo-effect Toxicity 0.000 claims description 5
239000004065 semiconductor Substances 0.000 claims description 3
238000013459 approach Methods 0.000 claims description 2
230000005484 gravity Effects 0.000 description 4
230000007704 transition Effects 0.000 description 4
238000010586 diagram Methods 0.000 description 3
238000006243 chemical reaction Methods 0.000 description 2
230000000694 effects Effects 0.000 description 2
239000000835 fiber Substances 0.000 description 2
230000009286 beneficial effect Effects 0.000 description 1
239000002800 charge carrier Substances 0.000 description 1
239000011248 coating agent Substances 0.000 description 1
238000000576 coating method Methods 0.000 description 1
239000004020 conductor Substances 0.000 description 1
230000005611 electricity Effects 0.000 description 1
230000008030 elimination Effects 0.000 description 1
238000003379 elimination reaction Methods 0.000 description 1
230000014509 gene expression Effects 0.000 description 1
230000002452 interceptive effect Effects 0.000 description 1
239000000463 material Substances 0.000 description 1
239000002184 metal Substances 0.000 description 1
230000003287 optical effect Effects 0.000 description 1
229910052710 silicon Inorganic materials 0.000 description 1
239000010703 silicon Substances 0.000 description 1

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/95—Circuit arrangements
- H10F77/953—Circuit arrangements for devices having potential barriers
- H10F77/957—Circuit arrangements for devices having potential barriers for position-sensitive photodetectors, e.g. lateral-effect photodiodes or quadrant photodiodes

Landscapes

Measurement Of Radiation (AREA)

NL8501501A 1985-05-24 1985-05-24 Foto-elektrische omzetter. NL8501501A (nl)

Priority Applications (4)

Application Number	Priority Date	Filing Date	Title
NL8501501A NL8501501A (nl)	1985-05-24	1985-05-24	Foto-elektrische omzetter.
US06/865,531 US4760436A (en)	1985-05-24	1986-05-21	Photo-electric transducer
EP86200895A EP0203667A1 (fr)	1985-05-24	1986-05-22	Transducteur photoélectrique
CA000509955A CA1264367A (fr)	1985-05-24	1986-05-26	Transducteur photo-electrique

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
NL8501501		1985-05-24
NL8501501A NL8501501A (nl)	1985-05-24	1985-05-24	Foto-elektrische omzetter.

Publications (1)

Publication Number	Publication Date
NL8501501A true NL8501501A (nl)	1986-12-16

Family

ID=19846041

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
NL8501501A NL8501501A (nl)	1985-05-24	1985-05-24	Foto-elektrische omzetter.

Country Status (4)

Country	Link
US (1)	US4760436A (fr)
EP (1)	EP0203667A1 (fr)
CA (1)	CA1264367A (fr)
NL (1)	NL8501501A (fr)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE8705296U1 (de) *	1987-04-09	1988-08-04	Heimann Gmbh, 6200 Wiesbaden	Infrarotdetektor
NL8901156A (nl) *	1989-05-08	1990-12-03	Imec Inter Uni Micro Electr	Stralingsgevoelig orgaan of sensor in retina-achtige configuratie.
JP3098358B2 (ja) *	1992-11-27	2000-10-16	三菱電機株式会社	位置検出素子、その位置検出素子を用いた位置検出方法、および光学式ロータリーエンコーダ
US5777333A (en) *	1997-03-26	1998-07-07	Eg&G Instruments, Inc.	Asymmetric radiation detector system
US6100533A (en) *	1997-03-26	2000-08-08	Eg&G Instruments, Inc.	Three-axis asymmetric radiation detector system
US5757007A (en) *	1997-04-04	1998-05-26	Eg&G Instruments, Inc.	Segmented electrode radiation detector
JP4724282B2 (ja) *	1999-10-12	2011-07-13	キヤノン株式会社	回転角検出装置
JP2006500579A (ja) *	2002-09-27	2006-01-05	コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ	光素子、そのような素子を製作する方法、及び光線とそのような素子の位置を揃える方法
EP2232209A1 (fr) *	2008-01-02	2010-09-29	Nxp B.V.	Capteur de lumière avec détection d'intensité et de direction
EP2662895B1 (fr)	2012-05-11	2014-06-25	Nxp B.V.	Circuit intégré comprenant un capteur de lumière directionnelle
WO2013167466A2 (fr)	2012-05-11	2013-11-14	Nxp B.V.	Circuit intégré comprenant un capteur de lumière directionnelle, dispositif comprenant un tel ci et procédé de fabrication d'un tel ci

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US3351493A (en) *	1960-08-22	1967-11-07	Electro Optical Systems Inc	Diffused radiation tracking transducer having a lateral photo voltage junction
US3222531A (en) *	1962-06-26	1965-12-07	Honeywell Inc	Solid state junction photopotentiometer
US3354313A (en) *	1963-05-15	1967-11-21	Mcdonnell Aircraft Corp	Photosensitive device for indicating position and intensity with centrally located electrode
US3207902A (en) *	1963-06-20	1965-09-21	Nuclear Diodes Inc	Radiation position detector
US3435232A (en) *	1966-03-03	1969-03-25	Hewlett Packard Co	Beam position detector
US3742223A (en) *	1970-05-25	1973-06-26	Mc Donnell Douglas Corp	Wide angle lateral photo-detector means
FR2184535B1 (fr) *	1972-05-19	1980-03-21	Commissariat Energie Atomique
US3971057A (en) *	1973-08-21	1976-07-20	The United States Of America As Represented By The Secretary Of The Navy	Lateral photodetector of improved sensitivity
US3904871A (en) *	1974-07-05	1975-09-09	Us Navy	Target locating circuit using a lateral photoelectric diode
US4131793A (en) *	1976-08-10	1978-12-26	The United States Of America As Represented By The Secretary Of The Navy	Lateral photodetectors
US4312114A (en) *	1977-02-24	1982-01-26	The United States Of America As Represented By The Secretary Of The Navy	Method of preparing a thin-film, single-crystal photovoltaic detector
NL8003906A (nl) *	1980-07-07	1982-02-01	Philips Nv	Stralingsgevoelige halfgeleiderinrichting.

1985
- 1985-05-24 NL NL8501501A patent/NL8501501A/nl not_active Application Discontinuation
1986
- 1986-05-21 US US06/865,531 patent/US4760436A/en not_active Expired - Fee Related
- 1986-05-22 EP EP86200895A patent/EP0203667A1/fr not_active Ceased
- 1986-05-26 CA CA000509955A patent/CA1264367A/fr not_active Expired - Fee Related

Also Published As

Publication number	Publication date
US4760436A (en)	1988-07-26
CA1264367A (fr)	1990-01-09
EP0203667A1 (fr)	1986-12-03

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Legal Events

Date	Code	Title	Description
1986-12-16	A1B	A search report has been drawn up
1991-01-02	BV	The patent application has lapsed