NL8702800A - Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. - Google Patents
Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. Download PDFInfo
- Publication number
- NL8702800A NL8702800A NL8702800A NL8702800A NL8702800A NL 8702800 A NL8702800 A NL 8702800A NL 8702800 A NL8702800 A NL 8702800A NL 8702800 A NL8702800 A NL 8702800A NL 8702800 A NL8702800 A NL 8702800A
- Authority
- NL
- Netherlands
- Prior art keywords
- voltage
- transistor
- bit line
- supply voltage
- memory circuit
- Prior art date
Links
- 239000011159 matrix material Substances 0.000 claims description 5
- 230000003071 parasitic effect Effects 0.000 claims 1
- 102100023882 Endoribonuclease ZC3H12A Human genes 0.000 description 9
- 101710112715 Endoribonuclease ZC3H12A Proteins 0.000 description 9
- QGVYYLZOAMMKAH-UHFFFAOYSA-N pegnivacogin Chemical compound COCCOC(=O)NCCCCC(NC(=O)OCCOC)C(=O)NCCCCCCOP(=O)(O)O QGVYYLZOAMMKAH-UHFFFAOYSA-N 0.000 description 9
- 108700012361 REG2 Proteins 0.000 description 7
- 101150108637 REG2 gene Proteins 0.000 description 7
- 101100120298 Rattus norvegicus Flot1 gene Proteins 0.000 description 7
- 101100412403 Rattus norvegicus Reg3b gene Proteins 0.000 description 7
- 230000000694 effects Effects 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- TVSPGDFLYLHCGW-MWBNKCOKSA-N n-[(e,2z)-4-ethyl-2-hydroxyimino-6-methyl-5-nitrohept-3-enyl]pyridine-3-carboxamide Chemical compound CC(C)C([N+]([O-])=O)C(/CC)=C/C(=N/O)/CNC(=O)C1=CC=CN=C1 TVSPGDFLYLHCGW-MWBNKCOKSA-N 0.000 description 1
- VIKNJXKGJWUCNN-XGXHKTLJSA-N norethisterone Chemical compound O=C1CC[C@@H]2[C@H]3CC[C@](C)([C@](CC4)(O)C#C)[C@@H]4[C@@H]3CCC2=C1 VIKNJXKGJWUCNN-XGXHKTLJSA-N 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000004513 sizing Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
- G11C11/419—Read-write [R-W] circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Static Random-Access Memory (AREA)
- Read Only Memory (AREA)
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8702800A NL8702800A (nl) | 1987-11-23 | 1987-11-23 | Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. |
| DE88202609T DE3884148T2 (de) | 1987-11-23 | 1988-11-21 | Integrierte Speicherschaltung mit innerer Speisespannungsregelung. |
| KR1019880015297A KR970006194B1 (ko) | 1987-11-23 | 1988-11-21 | 집접 메모리 회로 |
| EP88202609A EP0318094B1 (fr) | 1987-11-23 | 1988-11-21 | Circuit de mémorisation intégré à réglage interne de la tension d'alimentation |
| JP63294786A JP2726456B2 (ja) | 1987-11-23 | 1988-11-24 | 集積メモリ回路 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL8702800 | 1987-11-23 | ||
| NL8702800A NL8702800A (nl) | 1987-11-23 | 1987-11-23 | Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL8702800A true NL8702800A (nl) | 1989-06-16 |
Family
ID=19850959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL8702800A NL8702800A (nl) | 1987-11-23 | 1987-11-23 | Geintegreerde geheugenschakeling met interne voedingsspanningsregeling. |
Country Status (5)
| Country | Link |
|---|---|
| EP (1) | EP0318094B1 (fr) |
| JP (1) | JP2726456B2 (fr) |
| KR (1) | KR970006194B1 (fr) |
| DE (1) | DE3884148T2 (fr) |
| NL (1) | NL8702800A (fr) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5321658A (en) * | 1990-05-31 | 1994-06-14 | Oki Electric Industry Co., Ltd. | Semiconductor memory device being coupled by auxiliary power lines to a main power line |
| JPH04123388A (ja) * | 1990-09-13 | 1992-04-23 | Nec Corp | 半導体メモリ装置 |
| JP2003016785A (ja) * | 2001-06-28 | 2003-01-17 | Sharp Corp | 半導体記憶装置およびそれを用いた情報機器 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS57172761A (en) * | 1981-04-17 | 1982-10-23 | Hitachi Ltd | Semiconductor integrated circuit |
| US4482985A (en) * | 1981-04-17 | 1984-11-13 | Hitachi, Ltd. | Semiconductor integrated circuit |
| JPS60253090A (ja) * | 1984-05-30 | 1985-12-13 | Hitachi Ltd | 半導体装置 |
-
1987
- 1987-11-23 NL NL8702800A patent/NL8702800A/nl not_active Application Discontinuation
-
1988
- 1988-11-21 DE DE88202609T patent/DE3884148T2/de not_active Expired - Fee Related
- 1988-11-21 KR KR1019880015297A patent/KR970006194B1/ko not_active Expired - Fee Related
- 1988-11-21 EP EP88202609A patent/EP0318094B1/fr not_active Expired - Lifetime
- 1988-11-24 JP JP63294786A patent/JP2726456B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE3884148T2 (de) | 1994-03-31 |
| KR970006194B1 (ko) | 1997-04-24 |
| DE3884148D1 (de) | 1993-10-21 |
| EP0318094B1 (fr) | 1993-09-15 |
| KR890008839A (ko) | 1989-07-12 |
| JPH01162295A (ja) | 1989-06-26 |
| EP0318094A1 (fr) | 1989-05-31 |
| JP2726456B2 (ja) | 1998-03-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A1B | A search report has been drawn up | ||
| BV | The patent application has lapsed |