NO20011230L - Dannelse av opphengte partier ved bruk av SOI-substrater, og anvendelse derav for fremstilling av et vibrasjonsgyrometer - Google Patents

Dannelse av opphengte partier ved bruk av SOI-substrater, og anvendelse derav for fremstilling av et vibrasjonsgyrometer

Info

Publication number
NO20011230L
NO20011230L NO20011230A NO20011230A NO20011230L NO 20011230 L NO20011230 L NO 20011230L NO 20011230 A NO20011230 A NO 20011230A NO 20011230 A NO20011230 A NO 20011230A NO 20011230 L NO20011230 L NO 20011230L
Authority
NO
Norway
Prior art keywords
wafer
insulating layer
formation
preparation
silicon
Prior art date
Application number
NO20011230A
Other languages
English (en)
Norwegian (no)
Other versions
NO20011230D0 (no
Inventor
Mark Edward Mcnie
Vishal Nayar
Original Assignee
Secr Defence
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Secr Defence filed Critical Secr Defence
Publication of NO20011230D0 publication Critical patent/NO20011230D0/no
Publication of NO20011230L publication Critical patent/NO20011230L/no

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01C—MEASURING DISTANCES, LEVELS OR BEARINGS; SURVEYING; NAVIGATION; GYROSCOPIC INSTRUMENTS; PHOTOGRAMMETRY OR VIDEOGRAMMETRY
    • G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
    • G01C19/02—Rotary gyroscopes
    • G01C19/04—Details
    • G01C19/16—Suspensions; Bearings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Remote Sensing (AREA)
  • Pressure Sensors (AREA)
  • Gyroscopes (AREA)
  • Micromachines (AREA)
  • Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
  • Producing Shaped Articles From Materials (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
  • Press Drives And Press Lines (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrical Discharge Machining, Electrochemical Machining, And Combined Machining (AREA)
NO20011230A 1998-09-12 2001-03-09 Dannelse av opphengte partier ved bruk av SOI-substrater, og anvendelse derav for fremstilling av et vibrasjonsgyrometer NO20011230L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB9819821.1A GB9819821D0 (en) 1998-09-12 1998-09-12 Improvements relating to micro-machining
PCT/GB1999/003028 WO2000016041A2 (en) 1998-09-12 1999-09-13 Formation of suspended beams using soi substrates, and application to the fabrication of a vibrating gyrometer

Publications (2)

Publication Number Publication Date
NO20011230D0 NO20011230D0 (no) 2001-03-09
NO20011230L true NO20011230L (no) 2001-05-11

Family

ID=10838709

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20011230A NO20011230L (no) 1998-09-12 2001-03-09 Dannelse av opphengte partier ved bruk av SOI-substrater, og anvendelse derav for fremstilling av et vibrasjonsgyrometer

Country Status (11)

Country Link
US (2) US6276205B1 (de)
EP (2) EP1808672A3 (de)
JP (1) JP4999227B2 (de)
KR (1) KR100651769B1 (de)
AT (1) ATE367570T1 (de)
AU (1) AU5874099A (de)
CA (1) CA2343446A1 (de)
DE (1) DE69936590T2 (de)
GB (1) GB9819821D0 (de)
NO (1) NO20011230L (de)
WO (1) WO2000016041A2 (de)

Families Citing this family (68)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE514042C2 (sv) * 1998-05-08 2000-12-18 Nordic Sensor Technologies Ab Sensoranordning
AT409429B (de) * 1999-07-15 2002-08-26 Sez Semiconduct Equip Zubehoer Verfahren zum ätzbehandeln von halbleitersubstraten zwecks freilegen einer metallschicht
US6798312B1 (en) 1999-09-21 2004-09-28 Rockwell Automation Technologies, Inc. Microelectromechanical system (MEMS) analog electrical isolator
US6803755B2 (en) 1999-09-21 2004-10-12 Rockwell Automation Technologies, Inc. Microelectromechanical system (MEMS) with improved beam suspension
AU7859000A (en) * 1999-10-05 2001-05-10 L-3 Communications Corporation A method for improving the performance of micromachined devices
US6456939B1 (en) * 2000-01-04 2002-09-24 Mccall Hiram Micro inertial measurement unit
US6525352B1 (en) * 2000-11-22 2003-02-25 Network Photonics, Inc. Method to reduce release time of micromachined devices
US6815243B2 (en) * 2001-04-26 2004-11-09 Rockwell Automation Technologies, Inc. Method of fabricating a microelectromechanical system (MEMS) device using a pre-patterned substrate
US6756310B2 (en) * 2001-09-26 2004-06-29 Rockwell Automation Technologies, Inc. Method for constructing an isolate microelectromechanical system (MEMS) device using surface fabrication techniques
US6794271B2 (en) * 2001-09-28 2004-09-21 Rockwell Automation Technologies, Inc. Method for fabricating a microelectromechanical system (MEMS) device using a pre-patterned bridge
US6761829B2 (en) 2001-04-26 2004-07-13 Rockwell Automation Technologies, Inc. Method for fabricating an isolated microelectromechanical system (MEMS) device using an internal void
KR100421217B1 (ko) * 2001-05-30 2004-03-02 삼성전자주식회사 점착 방지 미세 구조물 제조 방법
US6664786B2 (en) 2001-07-30 2003-12-16 Rockwell Automation Technologies, Inc. Magnetic field sensor using microelectromechanical system
US6690178B2 (en) 2001-10-26 2004-02-10 Rockwell Automation Technologies, Inc. On-board microelectromechanical system (MEMS) sensing device for power semiconductors
US6562642B1 (en) * 2002-02-07 2003-05-13 International Business Machines Corporation Micro-structures and methods for their manufacture
GB0206510D0 (en) * 2002-03-20 2002-05-01 Qinetiq Ltd Micro-Electromechanical systems
GB0206509D0 (en) 2002-03-20 2002-05-01 Qinetiq Ltd Micro-Electromechanical systems
US6865945B2 (en) * 2002-06-10 2005-03-15 Matsushita Electric Industrial Co., Ltd. Angular velocity sensor
FR2845200A1 (fr) * 2002-09-26 2004-04-02 Memscap Procede de fabrication d'un composant electronique incluant une structure micro-electromecanique
KR100512988B1 (ko) * 2002-09-26 2005-09-07 삼성전자주식회사 플렉서블 mems 트랜스듀서 제조방법
US6979408B2 (en) * 2002-12-30 2005-12-27 Intel Corporation Method and apparatus for photomask fabrication
US6975193B2 (en) * 2003-03-25 2005-12-13 Rockwell Automation Technologies, Inc. Microelectromechanical isolating circuit
DE10331714B4 (de) * 2003-07-11 2006-05-24 Micronas Gmbh Verfahren zur Strukturierung der Oberfläche eines Substrats
US20050062362A1 (en) * 2003-08-28 2005-03-24 Hongyuan Yang Oscillatory gyroscope
US20050076866A1 (en) * 2003-10-14 2005-04-14 Hopper Mark L. Electromechanical valve actuator
KR100605497B1 (ko) * 2003-11-27 2006-07-28 삼성전자주식회사 에스오아이 기판들을 제조하는 방법들, 이를 사용하여반도체 소자들을 제조하는 방법들 및 그에 의해 제조된반도체 소자들
TWI245902B (en) * 2004-05-14 2005-12-21 Chung Shan Inst Of Science Microstructure angular velocity sensor device
JP4571943B2 (ja) 2004-07-12 2010-10-27 住友精密工業株式会社 角速度センサ
KR100555569B1 (ko) 2004-08-06 2006-03-03 삼성전자주식회사 절연막에 의해 제한된 채널영역을 갖는 반도체 소자 및 그제조방법
KR100843717B1 (ko) * 2007-06-28 2008-07-04 삼성전자주식회사 플로팅 바디 소자 및 벌크 바디 소자를 갖는 반도체소자 및그 제조방법
US20100117152A1 (en) * 2007-06-28 2010-05-13 Chang-Woo Oh Semiconductor devices
KR100658202B1 (ko) 2005-09-12 2006-12-15 (주)마이크로인피니티 마이크로 구조물의 부양체 및 그 제조방법
US7462509B2 (en) * 2006-05-16 2008-12-09 International Business Machines Corporation Dual-sided chip attached modules
TWI305930B (en) * 2006-06-19 2009-02-01 Touch Micro System Tech Method of fabricating suspended structure
US20080108224A1 (en) * 2006-10-12 2008-05-08 Zhaoning Yu Patterning methods
US20100038825A1 (en) * 2006-12-21 2010-02-18 Mcdonald Joel P Methods of forming microchannels by ultrafast pulsed laser direct-write processing
IL181367A (en) * 2007-02-15 2013-03-24 Elbit Systems Electro Optics Elop Ltd Vibrating gyroscopic device for measuring angular velocity
US8056413B2 (en) * 2007-09-11 2011-11-15 Evigia Systems, Inc. Sensor and sensing method utilizing symmetrical differential readout
EP2040032A1 (de) * 2007-09-19 2009-03-25 Atlantic Inertial Systems Limited Verbesserungen bei oder im Zusammenhang mit Winkelgeschwindigkeitssensoren
EP2191232B8 (de) 2007-09-18 2012-02-08 Atlantic Inertial Systems Limited Verbesserungen in bezug auf winkelgeschwindigkeitssensoren
US7992438B2 (en) * 2007-11-28 2011-08-09 Chung Shan Institute Of Science And Technology, Armaments Bureau, M.N.D. Multiaxial gyroscope
US7908922B2 (en) * 2008-01-24 2011-03-22 Delphi Technologies, Inc. Silicon integrated angular rate sensor
WO2009109969A2 (en) * 2008-03-03 2009-09-11 Ramot At Tel-Aviv University Ltd. Micro scale mechanical rate sensors
US8451077B2 (en) 2008-04-22 2013-05-28 International Business Machines Corporation MEMS switches with reduced switching voltage and methods of manufacture
GB0812788D0 (en) * 2008-07-12 2008-08-20 Atlantic Inertial Systems Ltd Improvements in or relating to vibrating structure gyroscopes
US8263426B2 (en) 2008-12-03 2012-09-11 Electronics And Telecommunications Research Institute High-sensitivity z-axis vibration sensor and method of fabricating the same
WO2010138717A1 (en) * 2009-05-27 2010-12-02 King Abdullah University Of Science And Technology Mems mass spring damper systems using an out-of-plane suspension scheme
US9072464B2 (en) * 2009-07-22 2015-07-07 Koninklijke Philips N.V. Thermal flow sensor integrated circuit with low response time and high sensitivity
US20120244969A1 (en) 2011-03-25 2012-09-27 May Patents Ltd. System and Method for a Motion Sensing Device
JP5708222B2 (ja) * 2011-05-12 2015-04-30 大日本印刷株式会社 力学量センサー
TWI456201B (zh) * 2011-11-29 2014-10-11 Univ Chung Hua 無線式熱氣泡式加速儀及其製備方法
US20130201316A1 (en) 2012-01-09 2013-08-08 May Patents Ltd. System and method for server based control
US9006077B2 (en) * 2013-08-21 2015-04-14 GlobalFoundries, Inc. Gate length independent silicon-on-nothing (SON) scheme for bulk FinFETs
JP6173851B2 (ja) * 2013-09-20 2017-08-02 株式会社日立ハイテクノロジーズ 分析方法およびプラズマエッチング装置
EP4250738B1 (de) 2014-04-22 2025-12-31 Snap-Aid Patents Ltd. Verfahren zur steuerung einer kamera auf der basis der verarbeitung eines von einer anderen kamera aufgenommenen bildes
EP2952979B1 (de) 2014-06-03 2017-03-01 Nivarox-FAR S.A. Uhrkomponente aus fotostrukturierbarem glas
US10419655B2 (en) 2015-04-27 2019-09-17 Snap-Aid Patents Ltd. Estimating and using relative head pose and camera field-of-view
DE102015118346A1 (de) * 2015-10-27 2017-04-27 Endress+Hauser Flowtec Ag MEMS Sensor zu Messung mindestens einer Messgröße
LT3761613T (lt) 2017-08-28 2023-03-10 Bright Data Ltd. Būdas pagerinti turinio parsisiuntimą, pasirenkant tunelinius įrenginius
US11190374B2 (en) 2017-08-28 2021-11-30 Bright Data Ltd. System and method for improving content fetching by selecting tunnel devices
EP3652721A1 (de) 2017-09-04 2020-05-20 NNG Software Developing and Commercial LLC Verfahren und vorrichtung zum sammeln und verwenden von sensordaten von einem fahrzeug
KR102086230B1 (ko) * 2018-06-26 2020-03-06 한국과학기술원 굴절률 및 스트레인의 주기적 동시변화를 이용한 공진기와 전하구속 구조 일체형 주기성 다리 구조 및 그 제조 방법
IL296197B2 (en) 2019-02-19 2024-05-01 Edgy Bees Ltd Real-time video data stream latency estimation
WO2020174460A2 (en) 2019-02-25 2020-09-03 Luminati Networks Ltd. System and method for url fetching retry mechanism
EP4030318B1 (de) 2019-04-02 2025-06-04 Bright Data Ltd. System und verfahren zur verwaltung eines nichtdirekten url-abrufdienstes
CN109974681B (zh) * 2019-04-09 2021-01-26 东南大学 一种基于光波导的盘式谐振陀螺仪及其加工封装方法
IL309988A (en) 2021-07-26 2024-03-01 Bright Data Ltd Emulation of a web browser in a dedicated relay unit
WO2024042819A1 (ja) * 2022-08-25 2024-02-29 住友精密工業株式会社 振動型角速度検出器

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63202035A (ja) * 1987-02-17 1988-08-22 Mitsubishi Electric Corp 半導体装置の製造方法
US4968628A (en) 1988-12-09 1990-11-06 Harris Corporation Method of fabricating back diffused bonded oxide substrates
US5238223A (en) * 1989-08-11 1993-08-24 Robert Bosch Gmbh Method of making a microvalve
EP0606220B1 (de) 1991-06-12 1997-03-26 Harris Corporation Verfahren zur herstellung eines halbleiter-beschleunigungsmessers
EP0543361B1 (de) 1991-11-20 2002-02-27 Canon Kabushiki Kaisha Verfahren zur Herstellung einer Halbleiteranordnung
DE4309917A1 (de) 1992-03-30 1993-10-07 Awa Microelectronics Verfahren zur Herstellung von Siliziummikrostrukturen sowie Siliziummikrostruktur
JP3367113B2 (ja) 1992-04-27 2003-01-14 株式会社デンソー 加速度センサ
EP0683921B1 (de) 1993-02-04 2004-06-16 Cornell Research Foundation, Inc. Mikrostrukturen und einzelmask, einkristall-herstellungsverfahren
GB2276976B (en) 1993-04-07 1996-10-23 British Aerospace Method of manufacturing a motion sensor
DE4315012B4 (de) 1993-05-06 2007-01-11 Robert Bosch Gmbh Verfahren zur Herstellung von Sensoren und Sensor
US5324683A (en) 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
DE4332057A1 (de) 1993-09-21 1995-03-30 Siemens Ag Integrierte mikromechanische Sensorvorrichtung und Verfahren zu deren Herstellung
US5415726A (en) 1993-12-21 1995-05-16 Delco Electronics Corporation Method of making a bridge-supported accelerometer structure
US5511428A (en) 1994-06-10 1996-04-30 Massachusetts Institute Of Technology Backside contact of sensor microstructures
US5495760A (en) * 1994-07-05 1996-03-05 Rockwell International Corporation Beermug gyroscope
GB2292609B (en) 1994-08-24 1998-04-15 British Aerospace Method for matching vibration mode frequencies on a vibrating structure
WO1996008036A1 (en) 1994-09-02 1996-03-14 Stichting Voor De Technische Wetenschappen Process for producing micromechanical structures by means of reactive ion etching
GB2299669B (en) * 1995-04-07 1998-12-16 British Aerospace Method for actively balancing a vibrating structure gyroscope sensing element structure
JPH0914570A (ja) 1995-06-27 1997-01-17 Tokyo Gas Co Ltd ライフライン管路の耐震強化装置
JPH09145740A (ja) 1995-09-22 1997-06-06 Denso Corp 加速度センサ
DE19537814B4 (de) 1995-10-11 2009-11-19 Robert Bosch Gmbh Sensor und Verfahren zur Herstellung eines Sensors
US5721162A (en) 1995-11-03 1998-02-24 Delco Electronics Corporation All-silicon monolithic motion sensor with integrated conditioning circuit
AU1120697A (en) 1995-11-29 1997-07-03 Litton Systems, Incorporated Method for purging a multi-layer sacrificial etched silicon substrate
US6048774A (en) * 1997-06-26 2000-04-11 Denso Corporation Method of manufacturing dynamic amount semiconductor sensor
US6075639A (en) * 1997-10-22 2000-06-13 The Board Of Trustees Of The Leland Stanford Junior University Micromachined scanning torsion mirror and method
US6159385A (en) * 1998-05-08 2000-12-12 Rockwell Technologies, Llc Process for manufacture of micro electromechanical devices having high electrical isolation

Also Published As

Publication number Publication date
AU5874099A (en) 2000-04-03
ATE367570T1 (de) 2007-08-15
WO2000016041A3 (en) 2000-09-28
CA2343446A1 (en) 2000-03-23
NO20011230D0 (no) 2001-03-09
GB9819821D0 (en) 1998-11-04
EP1808672A3 (de) 2009-06-17
EP1116008A2 (de) 2001-07-18
KR20010075052A (ko) 2001-08-09
EP1808672A2 (de) 2007-07-18
KR100651769B1 (ko) 2006-11-30
DE69936590D1 (de) 2007-08-30
DE69936590T2 (de) 2007-11-22
US6276205B1 (en) 2001-08-21
US20020017132A1 (en) 2002-02-14
EP1116008B1 (de) 2007-07-18
JP4999227B2 (ja) 2012-08-15
JP2002525843A (ja) 2002-08-13
US6670212B2 (en) 2003-12-30
WO2000016041A2 (en) 2000-03-23

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