NO20041276L - Organisk elektronisk innretning og fremgangsmate til fremstilling av en innretning - Google Patents
Organisk elektronisk innretning og fremgangsmate til fremstilling av en innretningInfo
- Publication number
- NO20041276L NO20041276L NO20041276A NO20041276A NO20041276L NO 20041276 L NO20041276 L NO 20041276L NO 20041276 A NO20041276 A NO 20041276A NO 20041276 A NO20041276 A NO 20041276A NO 20041276 L NO20041276 L NO 20041276L
- Authority
- NO
- Norway
- Prior art keywords
- manufacturing
- organic electronic
- electronic device
- organic
- electronic
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
- G11C13/0016—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material comprising polymers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/50—Resistive cell structure aspects
- G11C2213/55—Structure including two electrodes, a memory active layer and at least two other layers which can be a passive or source or reservoir layer or a less doped memory active layer
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/311—Purifying organic semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/151—Copolymers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Formation Of Insulating Films (AREA)
- Electroluminescent Light Sources (AREA)
- Photovoltaic Devices (AREA)
- Bipolar Transistors (AREA)
Priority Applications (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20041276A NO321555B1 (no) | 2004-03-26 | 2004-03-26 | Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning |
| PCT/NO2005/000101 WO2005093870A1 (en) | 2004-03-26 | 2005-03-21 | An organic electronic device and methods for manufacturing a device of this kind |
| CNA2005800097345A CN1938876A (zh) | 2004-03-26 | 2005-03-21 | 有机电子设备和制造这种设备的方法 |
| CA002559462A CA2559462A1 (en) | 2004-03-26 | 2005-03-21 | An organic electronic device and methods for manufacturing a device of this kind |
| RU2006137039/28A RU2006137039A (ru) | 2004-03-26 | 2005-03-21 | Органическое электронное устройство и способ его изготовления (варианты) |
| EP05730696A EP1728286A1 (en) | 2004-03-26 | 2005-03-21 | An organic electronic device and methods for manufacturing a device of this kind |
| AU2005226489A AU2005226489A1 (en) | 2004-03-26 | 2005-03-21 | An organic electronic device and methods for manufacturing a device of this kind |
| JP2007504905A JP2007531265A (ja) | 2004-03-26 | 2005-03-21 | 有機電子デバイスとこの種のデバイスの製造方法 |
| US11/088,194 US7265379B2 (en) | 2004-03-26 | 2005-03-24 | Organic electronic device and methods for manufacturing a device of this kind |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20041276A NO321555B1 (no) | 2004-03-26 | 2004-03-26 | Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO20041276D0 NO20041276D0 (no) | 2004-03-26 |
| NO20041276L true NO20041276L (no) | 2005-09-27 |
| NO321555B1 NO321555B1 (no) | 2006-05-29 |
Family
ID=34859229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20041276A NO321555B1 (no) | 2004-03-26 | 2004-03-26 | Organisk elektronisk innretning og fremgangsmate til fremstilling av en slik innretning |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US7265379B2 (no) |
| EP (1) | EP1728286A1 (no) |
| JP (1) | JP2007531265A (no) |
| CN (1) | CN1938876A (no) |
| AU (1) | AU2005226489A1 (no) |
| CA (1) | CA2559462A1 (no) |
| NO (1) | NO321555B1 (no) |
| RU (1) | RU2006137039A (no) |
| WO (1) | WO2005093870A1 (no) |
Families Citing this family (45)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7205595B2 (en) * | 2004-03-31 | 2007-04-17 | Intel Corporation | Polymer memory device with electron traps |
| NO321280B1 (no) * | 2004-07-22 | 2006-04-18 | Thin Film Electronics Asa | Organisk, elektronisk krets og fremgangsmate til dens fremstilling |
| US8314417B2 (en) | 2004-12-07 | 2012-11-20 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
| JP2006191005A (ja) * | 2004-12-07 | 2006-07-20 | Semiconductor Energy Lab Co Ltd | 記憶装置及びその作製方法並びに半導体装置及びその作製方法 |
| US7926726B2 (en) * | 2005-03-28 | 2011-04-19 | Semiconductor Energy Laboratory Co., Ltd. | Survey method and survey system |
| WO2006118229A1 (en) * | 2005-04-28 | 2006-11-09 | Semiconductor Energy Laboratory Co., Ltd. | Memory element and semiconductor device |
| EP1786049A1 (en) * | 2005-11-09 | 2007-05-16 | Acreo AB | Transistor |
| TWI304213B (en) * | 2006-01-11 | 2008-12-11 | Ind Tech Res Inst | Organic memory device and method of fabricating the same |
| US7405462B2 (en) | 2006-01-31 | 2008-07-29 | Hewlett-Packard Development Company, L.P. | FPGA architecture at conventional and submicron scales |
| KR101224768B1 (ko) * | 2006-02-02 | 2013-01-21 | 삼성전자주식회사 | 유기 메모리 소자 및 그의 제조방법 |
| KR101316558B1 (ko) * | 2006-03-10 | 2013-10-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 메모리 소자 및 반도체 장치 |
| US7910386B2 (en) * | 2006-07-28 | 2011-03-22 | General Electric Company | Method of making organic light emitting devices |
| TW200809739A (en) * | 2006-08-08 | 2008-02-16 | Ritdisplay Corp | Method for fabricating active matrix organic electro-luminescence display panel |
| US7858550B2 (en) * | 2006-08-25 | 2010-12-28 | Dressick Walter J | Method of making a nanostructured electrode |
| KR100836759B1 (ko) * | 2006-10-04 | 2008-06-10 | 삼성전자주식회사 | 유기 메모리 소자 및 그 형성 방법 |
| US8003980B2 (en) * | 2007-01-30 | 2011-08-23 | Hewlett-Packard Development Company, L.P. | Layered electro-organic devices with crosslinked polymer and methods of preparing the same |
| US9044715B2 (en) * | 2007-08-22 | 2015-06-02 | Colorado School Of Mines | Unsupported palladium alloy membranes and methods of making same |
| DE102007046679B4 (de) | 2007-09-27 | 2012-10-31 | Polyic Gmbh & Co. Kg | RFID-Transponder |
| DE102007055137A1 (de) * | 2007-11-19 | 2009-05-20 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Organische Leuchtdiode und Verfahren zu deren Herstellung |
| JP2010021401A (ja) * | 2008-07-11 | 2010-01-28 | Fujitsu Microelectronics Ltd | 半導体装置及びその製造方法 |
| EP2286988A1 (de) * | 2008-12-13 | 2011-02-23 | Bayer MaterialScience AG | Ferroelektret-Zwei- und Mehrschichtverbund und Verfahren zu dessen Herstellung |
| DE102008061928A1 (de) * | 2008-12-15 | 2010-06-17 | Polylc Gmbh & Co. Kg | Organisch elektronische Schaltung |
| GB0909721D0 (en) * | 2009-06-05 | 2009-07-22 | Plastic Logic Ltd | Dielectric seed layer |
| DE102009032696A1 (de) * | 2009-07-09 | 2011-01-13 | Polyic Gmbh & Co. Kg | Organisch elektronische Schaltung |
| US8906270B2 (en) * | 2010-03-19 | 2014-12-09 | Colorado School Of Mines | Acidic ion exchange membrane and method for making and using the same |
| CN103210515B (zh) * | 2010-09-15 | 2015-06-03 | 株式会社理光 | 机电转换器件及其制造方法及液滴排出头和液滴排出设备 |
| JP5517065B2 (ja) * | 2010-10-29 | 2014-06-11 | 独立行政法人物質・材料研究機構 | スイッチング素子及びスイッチアレイ |
| WO2012112893A1 (en) * | 2011-02-19 | 2012-08-23 | United Arab Emirates University | Semiconducting polymer |
| JP5674520B2 (ja) | 2011-03-24 | 2015-02-25 | 株式会社東芝 | 有機分子メモリの製造方法 |
| US8859098B2 (en) * | 2012-05-18 | 2014-10-14 | Lord Corporation | Acrylic adhesion promoters |
| JP6296701B2 (ja) | 2012-10-15 | 2018-03-20 | 住友化学株式会社 | 電子デバイスの製造方法 |
| US20150373858A1 (en) * | 2013-02-08 | 2015-12-24 | Kuraray Co., Ltd. | Electronic device |
| JP6306522B2 (ja) * | 2013-02-08 | 2018-04-04 | 株式会社クラレ | 多層構造体およびその製造方法 |
| EP2779261B1 (en) | 2013-03-15 | 2016-11-30 | Acreo Swedish ICT AB | Ferroelectric field-effect transistor |
| CN103762217B (zh) * | 2014-01-26 | 2016-05-04 | 江苏巨邦环境工程集团股份有限公司 | 一种铁电存储器的制造方法 |
| CN105321886B (zh) * | 2014-05-29 | 2019-07-05 | 联华电子股份有限公司 | 电容器结构及其制造方法 |
| EP3223684B1 (en) * | 2014-11-24 | 2022-10-26 | Tarkett GDL | Monitoring system with pressure sensor in floor covering |
| EP3353844B1 (en) | 2015-03-27 | 2022-05-11 | Mason K. Harrup | All-inorganic solvents for electrolytes |
| US10653798B2 (en) | 2015-06-04 | 2020-05-19 | University Of Florida Research Foundation, Inc. | Electroactive supramolecular polymeric assemblies, methods of making electroactive supramolecular polymeric assemblies, and method of using electroactive supramolecular polymeric assemblies |
| US20170092533A1 (en) * | 2015-09-29 | 2017-03-30 | Applied Materials, Inc. | Selective silicon dioxide deposition using phosphonic acid self assembled monolayers as nucleation inhibitor |
| US10707531B1 (en) | 2016-09-27 | 2020-07-07 | New Dominion Enterprises Inc. | All-inorganic solvents for electrolytes |
| US10074559B1 (en) | 2017-03-07 | 2018-09-11 | Applied Materials, Inc. | Selective poreseal deposition prevention and residue removal using SAM |
| EP3619323A4 (en) | 2017-05-05 | 2021-01-27 | Quantum-si Incorporated | SUBSTRATES WITH MODIFIED SURFACE REACTIVITY AND AGING-INHIBITIVE PROPERTIES IN BIOLOGICAL REACTIONS |
| BR112022006682A2 (pt) | 2019-10-11 | 2022-07-12 | Quantum Si Inc | Modificação de superfície na fase de vapor |
| DE102021125407A1 (de) * | 2021-09-30 | 2023-03-30 | Polymer Competence Center Leoben Gmbh | Verfahren zur Herstellung eines Dielektrikums für einen Kondensator und Verfahren zur Herstellung eines Kondensators und Kondensator |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2675803B2 (ja) * | 1988-02-22 | 1997-11-12 | キヤノン株式会社 | スイッチング素子 |
| DE69217881T2 (de) * | 1991-12-24 | 1997-07-31 | Mitsui Toatsu Chemicals | Organisches elektrolumineszentes Dünnfilmelement |
| US7166241B1 (en) * | 1993-03-03 | 2007-01-23 | International Business Machines Corporation | Water-soluble electrically conducting polymers, their synthesis and use |
| JP2001506393A (ja) * | 1994-09-06 | 2001-05-15 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 導電性ポリマー製の透明な構造を付与した電極層を有するエレクトロルミネセント装置 |
| NO972803D0 (no) * | 1997-06-17 | 1997-06-17 | Opticom As | Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte |
| NO309500B1 (no) * | 1997-08-15 | 2001-02-05 | Thin Film Electronics Asa | Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme |
| US6284654B1 (en) * | 1998-04-16 | 2001-09-04 | Advanced Technology Materials, Inc. | Chemical vapor deposition process for fabrication of hybrid electrodes |
| US6548843B2 (en) * | 1998-11-12 | 2003-04-15 | International Business Machines Corporation | Ferroelectric storage read-write memory |
| US6611096B1 (en) * | 1999-09-03 | 2003-08-26 | 3M Innovative Properties Company | Organic electronic devices having conducting self-doped polymer buffer layers |
| NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
| EP1271561B1 (en) * | 2001-06-27 | 2011-06-22 | FUJIFILM Corporation | Conductive film |
| US6433359B1 (en) * | 2001-09-06 | 2002-08-13 | 3M Innovative Properties Company | Surface modifying layers for organic thin film transistors |
| US6946676B2 (en) | 2001-11-05 | 2005-09-20 | 3M Innovative Properties Company | Organic thin film transistor with polymeric interface |
| NO317912B1 (no) | 2001-11-23 | 2004-12-27 | Thin Film Electronics Asa | Ferroelektrisk eller elektret minnekrets |
| NO20015735D0 (no) * | 2001-11-23 | 2001-11-23 | Thin Film Electronics Asa | Barrierelag |
| DE10200475A1 (de) * | 2002-01-09 | 2003-07-24 | Samsung Sdi Co | Nichtflüchtiges Speicherelement und Anzeigematrizen daraus |
| DE10209419A1 (de) * | 2002-03-05 | 2003-09-25 | Celanese Ventures Gmbh | Verfahren zur Herstellung einer Polymerelektrolytmembran und deren Anwendung in Brennstoffzellen |
| DE10213540A1 (de) | 2002-03-06 | 2004-02-19 | Celanese Ventures Gmbh | Lösung aus Vinylphosphonsäure, Verfahren zur Herstellung einer Polymerelektrolytmembran aus Polyvinylphosphaonsäure und deren Anwendung in Brennstoffzellen |
| US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
| US7075105B2 (en) * | 2003-03-19 | 2006-07-11 | Masataka Kano | Organic bistable element, organic bistable memory device using the same, and method for driving said organic bistable element and organic bistable memory device |
| US6825060B1 (en) * | 2003-04-02 | 2004-11-30 | Advanced Micro Devices, Inc. | Photosensitive polymeric memory elements |
-
2004
- 2004-03-26 NO NO20041276A patent/NO321555B1/no unknown
-
2005
- 2005-03-21 EP EP05730696A patent/EP1728286A1/en not_active Withdrawn
- 2005-03-21 WO PCT/NO2005/000101 patent/WO2005093870A1/en not_active Ceased
- 2005-03-21 CA CA002559462A patent/CA2559462A1/en not_active Abandoned
- 2005-03-21 CN CNA2005800097345A patent/CN1938876A/zh active Pending
- 2005-03-21 RU RU2006137039/28A patent/RU2006137039A/ru not_active Application Discontinuation
- 2005-03-21 AU AU2005226489A patent/AU2005226489A1/en not_active Abandoned
- 2005-03-21 JP JP2007504905A patent/JP2007531265A/ja not_active Abandoned
- 2005-03-24 US US11/088,194 patent/US7265379B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| NO321555B1 (no) | 2006-05-29 |
| CA2559462A1 (en) | 2005-10-06 |
| WO2005093870A1 (en) | 2005-10-06 |
| AU2005226489A1 (en) | 2005-10-06 |
| CN1938876A (zh) | 2007-03-28 |
| US20050249975A1 (en) | 2005-11-10 |
| US7265379B2 (en) | 2007-09-04 |
| RU2006137039A (ru) | 2008-05-10 |
| JP2007531265A (ja) | 2007-11-01 |
| EP1728286A1 (en) | 2006-12-06 |
| NO20041276D0 (no) | 2004-03-26 |
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