NO20051668L - Fremgangsmate for a berge slettede bit i en minneanordning - Google Patents

Fremgangsmate for a berge slettede bit i en minneanordning

Info

Publication number
NO20051668L
NO20051668L NO20051668A NO20051668A NO20051668L NO 20051668 L NO20051668 L NO 20051668L NO 20051668 A NO20051668 A NO 20051668A NO 20051668 A NO20051668 A NO 20051668A NO 20051668 L NO20051668 L NO 20051668L
Authority
NO
Norway
Prior art keywords
current
cells
memory device
reference stream
state
Prior art date
Application number
NO20051668A
Other languages
English (en)
Inventor
Danut I Manea
Original Assignee
Atmel Corp A Delaware Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp A Delaware Corp filed Critical Atmel Corp A Delaware Corp
Publication of NO20051668L publication Critical patent/NO20051668L/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)

Abstract

Sammendrag Fremgangsmåte (fig. 1) for å gjenvinne overslettede bit i en minnecelle. I fremgangsmåten er et par av referansestrømmer (IHH, IHL) internt generert (301) for å definere et strømvindu korresponderende til den slettede tilstand ("11") for minnecellen. Den første referansestrøm definerer den høyeste strøm for strømvinduet (12) og den andre referansestrøm definerer den laveste strøm for strømvinduet. Så blir det bestemt (302) hvilke av minnecellene i en minnematrise som er i en overslettet tilstand (13) ved å la en mengde ladning på dens flytende port som korresponderer til en ledningsstrøm under en ledningsoperasjon som er større enn den første referansestrøm. Så blir de overslettede celler programmert (303: fig. 8) inntil cellene er i en slettet tilstand.
NO20051668A 2002-09-04 2005-04-04 Fremgangsmate for a berge slettede bit i en minneanordning NO20051668L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/235,265 US6724662B2 (en) 2002-09-04 2002-09-04 Method of recovering overerased bits in a memory device
PCT/US2003/023881 WO2004023239A2 (en) 2002-09-04 2003-07-30 Method of recovering overerased bits in a memory device

Publications (1)

Publication Number Publication Date
NO20051668L true NO20051668L (no) 2005-06-06

Family

ID=31977540

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20051668A NO20051668L (no) 2002-09-04 2005-04-04 Fremgangsmate for a berge slettede bit i en minneanordning

Country Status (11)

Country Link
US (1) US6724662B2 (no)
EP (1) EP1543526B1 (no)
JP (1) JP2005538484A (no)
KR (1) KR20050032124A (no)
CN (1) CN100435242C (no)
AU (1) AU2003257048A1 (no)
CA (1) CA2497528A1 (no)
DE (1) DE60323999D1 (no)
NO (1) NO20051668L (no)
TW (1) TWI229348B (no)
WO (1) WO2004023239A2 (no)

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JP2004171625A (ja) * 2002-11-18 2004-06-17 Renesas Technology Corp 不揮発性記憶装置
JP4424952B2 (ja) * 2003-09-16 2010-03-03 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US7307878B1 (en) * 2005-08-29 2007-12-11 Spansion Llc Flash memory device having improved program rate
US8358543B1 (en) 2005-09-20 2013-01-22 Spansion Llc Flash memory programming with data dependent control of source lines
US7957204B1 (en) 2005-09-20 2011-06-07 Spansion Llc Flash memory programming power reduction
US7433228B2 (en) * 2005-09-20 2008-10-07 Spansion Llc Multi-bit flash memory device having improved program rate
US7362610B1 (en) 2005-12-27 2008-04-22 Actel Corporation Programming method for non-volatile memory and non-volatile memory-based programmable logic device
US7342830B1 (en) 2006-01-17 2008-03-11 Spansion Llc Program and program verify operations for flash memory
US7403425B2 (en) * 2006-03-07 2008-07-22 Micron Technology, Inc. Programming a flash memory device
KR100744013B1 (ko) 2006-07-31 2007-07-30 삼성전자주식회사 플래시 메모리 장치 및 그것의 소거 방법
CN101630532B (zh) * 2008-07-17 2012-07-11 上海华虹Nec电子有限公司 用于电可擦除可编程只读存储器的灵敏放大器及实现方法
US8027187B2 (en) * 2008-09-12 2011-09-27 Micron Technology, Inc. Memory sensing devices, methods, and systems
US8289773B2 (en) * 2010-11-09 2012-10-16 Freescale Semiconductor, Inc. Non-volatile memory (NVM) erase operation with brownout recovery technique
US9280168B2 (en) * 2013-03-29 2016-03-08 Intel Corporation Low-power, high-accuracy current reference for highly distributed current references for cross point memory
KR101832384B1 (ko) 2015-09-14 2018-02-26 김형석 떠 먹는 두부의 제조방법
KR101698834B1 (ko) 2016-08-24 2017-01-23 화이버트론 주식회사 침입 감지 장치용 절곡 기구 및 이를 포함하는 침입 감지 장치
CN109308388B (zh) * 2018-09-12 2022-11-08 成都师范学院 电流分数阶积分控制式忆感器
CN117316245A (zh) * 2022-06-22 2023-12-29 世界先进积体电路股份有限公司 非挥发性存储器装置及其控制方法

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US5268870A (en) 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5043940A (en) 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5293560A (en) 1988-06-08 1994-03-08 Eliyahou Harari Multi-state flash EEPROM system using incremental programing and erasing methods
US5218569A (en) 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5272669A (en) 1991-02-20 1993-12-21 Sundisk Corporation Method and structure for programming floating gate memory cells
US5237535A (en) * 1991-10-09 1993-08-17 Intel Corporation Method of repairing overerased cells in a flash memory
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US5335198A (en) * 1993-05-06 1994-08-02 Advanced Micro Devices, Inc. Flash EEPROM array with high endurance
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JP2692635B2 (ja) * 1995-03-17 1997-12-17 日本電気株式会社 不揮発性半導体記憶装置及びそのデータ消去方法
JPH08263992A (ja) * 1995-03-24 1996-10-11 Sharp Corp 不揮発性半導体記憶装置の書き込み方法
US5642311A (en) * 1995-10-24 1997-06-24 Advanced Micro Devices Overerase correction for flash memory which limits overerase and prevents erase verify errors
US5901090A (en) * 1998-05-27 1999-05-04 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
US6011721A (en) * 1998-08-12 2000-01-04 Advanced Micro Devices Method for sensing state of erasure of a flash electrically erasable programmable read-only memory (EEPROM)
US6205059B1 (en) * 1998-10-05 2001-03-20 Advanced Micro Devices Method for erasing flash electrically erasable programmable read-only memory (EEPROM)
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JP3569185B2 (ja) * 1999-12-24 2004-09-22 Ｎｅｃエレクトロニクス株式会社 不揮発性半導体記憶装置
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Also Published As

Publication number Publication date
EP1543526A2 (en) 2005-06-22
KR20050032124A (ko) 2005-04-06
CN1692448A (zh) 2005-11-02
AU2003257048A8 (en) 2004-03-29
TWI229348B (en) 2005-03-11
TW200406783A (en) 2004-05-01
US6724662B2 (en) 2004-04-20
AU2003257048A1 (en) 2004-03-29
WO2004023239A2 (en) 2004-03-18
EP1543526B1 (en) 2008-10-08
JP2005538484A (ja) 2005-12-15
WO2004023239A3 (en) 2004-05-06
CN100435242C (zh) 2008-11-19
CA2497528A1 (en) 2004-03-18
EP1543526A4 (en) 2006-01-11
DE60323999D1 (de) 2008-11-20
US20040052143A1 (en) 2004-03-18

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