NO20053532L - O-ring med svaert lav fuktighet og fremgangsmate for a fremsstille den samme - Google Patents

O-ring med svaert lav fuktighet og fremgangsmate for a fremsstille den samme

Info

Publication number
NO20053532L
NO20053532L NO20053532A NO20053532A NO20053532L NO 20053532 L NO20053532 L NO 20053532L NO 20053532 A NO20053532 A NO 20053532A NO 20053532 A NO20053532 A NO 20053532A NO 20053532 L NO20053532 L NO 20053532L
Authority
NO
Norway
Prior art keywords
rings
ring
making
same
low humidity
Prior art date
Application number
NO20053532A
Other languages
English (en)
Inventor
Darwin G Enicks
Original Assignee
Atmel Corp A Delaware Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp A Delaware Corp filed Critical Atmel Corp A Delaware Corp
Publication of NO20053532L publication Critical patent/NO20053532L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S277/00—Seal for a joint or juncture
    • Y10S277/91—O-ring seal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S277/00—Seal for a joint or juncture
    • Y10S277/913—Seal for fluid pressure below atmospheric, e.g. vacuum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49229—Prime mover or fluid pump making
    • Y10T29/49297—Seal or packing making
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49826—Assembling or joining
    • Y10T29/49863—Assembling or joining with prestressing of part
    • Y10T29/4987—Elastic joining of parts

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

0-ringer med svært lav fijktighet preparert ved å plassere standard o-ringer (16) under vakuum i en inert atmosfære for en tidsperiode (18) tilsfrekkelig lenge til å oppnå ønsket gassutstrømningsrate. Varme er ikke tilført. Mens o-ringene er under vakuum, blir fiikt fjernet fiia o-ringene (20) via dififiisjonstransport.
NO20053532A 2002-12-20 2005-07-19 O-ring med svaert lav fuktighet og fremgangsmate for a fremsstille den samme NO20053532L (no)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/327,321 US7080440B2 (en) 2002-12-20 2002-12-20 Very low moisture o-ring and method for preparing the same
PCT/US2003/036992 WO2004061897A2 (en) 2002-12-20 2003-11-20 Very low moisture o-ring and method for preparing the same

Publications (1)

Publication Number Publication Date
NO20053532L true NO20053532L (no) 2005-07-19

Family

ID=32594221

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20053532A NO20053532L (no) 2002-12-20 2005-07-19 O-ring med svaert lav fuktighet og fremgangsmate for a fremsstille den samme

Country Status (10)

Country Link
US (2) US7080440B2 (no)
EP (1) EP1576330A2 (no)
JP (1) JP2006511713A (no)
KR (1) KR20050088461A (no)
CN (1) CN1729379A (no)
AU (1) AU2003291102A1 (no)
CA (1) CA2507961A1 (no)
NO (1) NO20053532L (no)
TW (1) TW200425227A (no)
WO (1) WO2004061897A2 (no)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7080440B2 (en) * 2002-12-20 2006-07-25 Atmel Corporation Very low moisture o-ring and method for preparing the same
US20090151623A1 (en) * 2007-12-12 2009-06-18 Atmel Corporation Formation and applications of high-quality epitaxial films
US20090189159A1 (en) * 2008-01-28 2009-07-30 Atmel Corporation Gettering layer on substrate
US8042566B2 (en) 2008-07-23 2011-10-25 Atmel Corporation Ex-situ component recovery

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3121915B2 (ja) * 1992-06-01 2001-01-09 東京エレクトロン株式会社 封止装置
US5316171A (en) 1992-10-01 1994-05-31 Danner Harold J Jun Vacuum insulated container
US6114216A (en) 1996-11-13 2000-09-05 Applied Materials, Inc. Methods for shallow trench isolation
DE69735938T2 (de) 1997-01-10 2007-01-25 Nippon Valqua Industries, Ltd. Oberflächenmodifiziertes fluorokautschukdichtungsmaterial
US6791692B2 (en) 2000-11-29 2004-09-14 Lightwind Corporation Method and device utilizing plasma source for real-time gas sampling
US7080440B2 (en) * 2002-12-20 2006-07-25 Atmel Corporation Very low moisture o-ring and method for preparing the same

Also Published As

Publication number Publication date
KR20050088461A (ko) 2005-09-06
WO2004061897A3 (en) 2004-11-18
CN1729379A (zh) 2006-02-01
TW200425227A (en) 2004-11-16
WO2004061897A2 (en) 2004-07-22
CA2507961A1 (en) 2004-07-22
US20060143913A1 (en) 2006-07-06
AU2003291102A1 (en) 2004-07-29
AU2003291102A8 (en) 2004-07-29
EP1576330A2 (en) 2005-09-21
JP2006511713A (ja) 2006-04-06
US20040117968A1 (en) 2004-06-24
US7080440B2 (en) 2006-07-25

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