NO20061668L - Solcelle og fremgangsmate for fremstilling av samme - Google Patents

Solcelle og fremgangsmate for fremstilling av samme

Info

Publication number
NO20061668L
NO20061668L NO20061668A NO20061668A NO20061668L NO 20061668 L NO20061668 L NO 20061668L NO 20061668 A NO20061668 A NO 20061668A NO 20061668 A NO20061668 A NO 20061668A NO 20061668 L NO20061668 L NO 20061668L
Authority
NO
Norway
Prior art keywords
contacting
passivation
layers
making
same
Prior art date
Application number
NO20061668A
Other languages
English (en)
Inventor
Erik Sauar
Andreas Bentzen
Original Assignee
Renewable Energy Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renewable Energy Corp filed Critical Renewable Energy Corp
Priority to NO20061668A priority Critical patent/NO20061668L/no
Priority to JP2009505312A priority patent/JP2009533864A/ja
Priority to CNA2007800132155A priority patent/CN101421851A/zh
Priority to EP07747591A priority patent/EP2013912A2/en
Priority to US12/226,133 priority patent/US20090283141A1/en
Priority to PCT/NO2007/000130 priority patent/WO2007117153A2/en
Publication of NO20061668L publication Critical patent/NO20061668L/no

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Weting (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

Oppfinnelsen vedrører en fremgangsmåte for kontaktering av solcelleskiver som inneholder ett eller flere lag av temperatursensitive passiveringslag, ved at det først tilveiebringes lokale åpninger i passiveringslaget/-lagene og åpningene deretter fylles med et elektrisk ledende materiale. På den måten blir det mulig å kunne unngå de relativt høye temperaturer som er nødvendig i de konvensjonelle fremgangsmåter for kontaktering av solcelleskiver som inneholder ett eller flere passiveringslag. Derved kan man bibeholde de utmerkede passiveringsegenskapene til de nyutviklede temperaturfølsomme passiveringslagene under og etter kontakteringen.
NO20061668A 2006-04-12 2006-04-12 Solcelle og fremgangsmate for fremstilling av samme NO20061668L (no)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NO20061668A NO20061668L (no) 2006-04-12 2006-04-12 Solcelle og fremgangsmate for fremstilling av samme
JP2009505312A JP2009533864A (ja) 2006-04-12 2007-04-12 太陽電池およびそれを製造するための方法
CNA2007800132155A CN101421851A (zh) 2006-04-12 2007-04-12 太阳电池及其制造方法
EP07747591A EP2013912A2 (en) 2006-04-12 2007-04-12 Solar cells and methods for manufacturing same
US12/226,133 US20090283141A1 (en) 2006-04-12 2007-04-12 Solar Cells and Methods for Manufacturing Same
PCT/NO2007/000130 WO2007117153A2 (en) 2006-04-12 2007-04-12 Solar cells and methods for manufacturing same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20061668A NO20061668L (no) 2006-04-12 2006-04-12 Solcelle og fremgangsmate for fremstilling av samme

Publications (1)

Publication Number Publication Date
NO20061668L true NO20061668L (no) 2007-10-15

Family

ID=38476961

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20061668A NO20061668L (no) 2006-04-12 2006-04-12 Solcelle og fremgangsmate for fremstilling av samme

Country Status (6)

Country Link
US (1) US20090283141A1 (no)
EP (1) EP2013912A2 (no)
JP (1) JP2009533864A (no)
CN (1) CN101421851A (no)
NO (1) NO20061668L (no)
WO (1) WO2007117153A2 (no)

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JP5868661B2 (ja) * 2011-11-09 2016-02-24 シャープ株式会社 バイパスダイオードおよびその製造方法
CN104011882A (zh) * 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
US9281260B2 (en) * 2012-03-08 2016-03-08 Infineon Technologies Ag Semiconductor packages and methods of forming the same
WO2014000826A1 (en) * 2012-06-29 2014-01-03 Ecole Polytechnique Federale De Lausanne (Epfl) Solar cell
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US9293624B2 (en) * 2012-12-10 2016-03-22 Sunpower Corporation Methods for electroless plating of a solar cell metallization layer
CA2925436C (en) 2013-03-07 2021-10-26 Alliance For Sustainable Energy, Llc Methods for producing thin film charge selective transport layers
DE102013210092A1 (de) * 2013-05-29 2014-12-04 Robert Bosch Gmbh Verfahren zur Herstellung einer Solarzelle
CN104966761B (zh) * 2015-07-08 2017-04-05 四川银河星源科技有限公司 一种晶体硅太阳能电池的制造方法
WO2017069257A1 (ja) * 2015-10-21 2017-04-27 京セラ株式会社 太陽電池素子、太陽電池モジュールおよび太陽電池素子の製造方法
US9634178B1 (en) 2015-12-16 2017-04-25 Sunpower Corporation Method of using laser welding to ohmic contact of metallic thermal and diffusion barrier layer for foil-based metallization of solar cells
CN105702806A (zh) * 2016-03-28 2016-06-22 泰州中来光电科技有限公司 晶体硅太阳能电池的金属化方法和电池及其组件、系统
CN105702758A (zh) * 2016-04-14 2016-06-22 泰州中来光电科技有限公司 背结n型太阳能电池的制备方法及其电池和组件、系统
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Also Published As

Publication number Publication date
WO2007117153A3 (en) 2008-08-07
US20090283141A1 (en) 2009-11-19
JP2009533864A (ja) 2009-09-17
WO2007117153A2 (en) 2007-10-18
CN101421851A (zh) 2009-04-29
EP2013912A2 (en) 2009-01-14

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