NO20062634L - Data storage device - Google Patents
Data storage deviceInfo
- Publication number
- NO20062634L NO20062634L NO20062634A NO20062634A NO20062634L NO 20062634 L NO20062634 L NO 20062634L NO 20062634 A NO20062634 A NO 20062634A NO 20062634 A NO20062634 A NO 20062634A NO 20062634 L NO20062634 L NO 20062634L
- Authority
- NO
- Norway
- Prior art keywords
- memory
- unit
- read
- write
- memory unit
- Prior art date
Links
- 238000013500 data storage Methods 0.000 title abstract 2
- 230000005684 electric field Effects 0.000 abstract 2
- 230000010287 polarization Effects 0.000 abstract 1
Landscapes
- Semiconductor Memories (AREA)
Abstract
I en ikke-flyktig elektrisk datalagringsinnretning er en minneenhet (10) og en lese/skriveenhet (11) anordnet som fysisk separate enheter. Minneenheten (10) er basert på et minnemateriale (4) som kan innstilles på minst to distinkte fysiske tilstander ved å påtrykke et elektrisk felt over minnematerialet. Lese/skriveenheten (10) omfatter kontaktanordninger (9) anordnet i et bestemt geometrisk mønster som muliggjør en definisjon av minneceller i minneenheten (10) i en initial skriveoperasjon, idet minnecellene er plassert i et geometrisk mønster som svarer til det til kontaktanordningene (9). Etablering av en fysisk kontakt mellom minneenheten (10) og lese/skriveenheten (11) slutter en elektrisk krets og en adressert minnecelle slik at lese/skrive- eller sletteoperasjoner kan bevirkes. Minnematerialet (4) til minneenheten (10) kan være et ferroelektrisk eller elektret materiale som kan polariseres til to svitsjbare polarisasjonstilstander, eller det kan være et materiale med en resistiv impedanskarakteristikk slik at en minnecelle av materialet kan innstilles på en spesifikk stabil resistansverdi ved påtrykking av et elektrisk felt.In a non-volatile electrical data storage device, a memory unit (10) and a read / write unit (11) are arranged as physically separate units. The memory unit (10) is based on a memory material (4) which can be set to at least two distinct physical states by applying an electric field across the memory material. The read / write unit (10) comprises contact devices (9) arranged in a particular geometric pattern which allows a definition of memory cells in the memory unit (10) in an initial write operation, the memory cells being placed in a geometric pattern corresponding to that of the contact devices (9). . Establishing a physical contact between the memory unit (10) and the read / write unit (11) terminates an electrical circuit and an addressed memory cell so that read / write or delete operations can be effected. The memory material (4) of the memory unit (10) may be a ferroelectric or electret material which can be polarized to two switchable polarization states, or it may be a material having a resistive impedance characteristic such that a memory cell of the material can be set to a specific stable resistance value by applying an electric field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20062634A NO20062634L (en) | 2005-06-14 | 2006-06-08 | Data storage device |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NO20052904A NO20052904L (en) | 2005-06-14 | 2005-06-14 | A non-volatile electrical memory system |
| NO20062634A NO20062634L (en) | 2005-06-14 | 2006-06-08 | Data storage device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NO20062634L true NO20062634L (en) | 2006-12-15 |
Family
ID=37781933
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO20062634A NO20062634L (en) | 2005-06-14 | 2006-06-08 | Data storage device |
Country Status (1)
| Country | Link |
|---|---|
| NO (1) | NO20062634L (en) |
-
2006
- 2006-06-08 NO NO20062634A patent/NO20062634L/en not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FC2A | Withdrawal, rejection or dismissal of laid open patent application |