NO20092111L - Reaktor for fremstilling av silisium ved kjemisk dampavsetning - Google Patents

Reaktor for fremstilling av silisium ved kjemisk dampavsetning

Info

Publication number
NO20092111L
NO20092111L NO20092111A NO20092111A NO20092111L NO 20092111 L NO20092111 L NO 20092111L NO 20092111 A NO20092111 A NO 20092111A NO 20092111 A NO20092111 A NO 20092111A NO 20092111 L NO20092111 L NO 20092111L
Authority
NO
Norway
Prior art keywords
reactor
silicon
vapor deposition
chemical vapor
production
Prior art date
Application number
NO20092111A
Other languages
English (en)
Other versions
NO334785B1 (no
Inventor
Josef Filtvedt
Werner O Filtvedt
Original Assignee
Dynatec Engineering As
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dynatec Engineering As filed Critical Dynatec Engineering As
Priority to NO20092111A priority Critical patent/NO334785B1/no
Priority to US13/266,850 priority patent/US9156704B2/en
Priority to CN2010800212880A priority patent/CN102428027A/zh
Priority to PCT/EP2010/057329 priority patent/WO2010136529A1/en
Priority to EP10725406A priority patent/EP2435365A1/en
Publication of NO20092111L publication Critical patent/NO20092111L/no
Publication of NO334785B1 publication Critical patent/NO334785B1/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/03—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent
    • C01B33/031—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of silicon halides or halosilanes or reduction thereof with hydrogen as the only reducing agent by decomposition of silicon tetraiodide
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Reaktor for fremstilling av silisium ved kjemisk dampavsetning, omfattende et reaktorlegeme som danner en beholder, minst ett innløp for en silisiumholdig gass,. minst ett utløp, og minst en varmeinnretning som en del av eller operativt anordnet til reaktoren, særpreget ved at i det minste en hoveddel av reaktorlegemet er fremstilt av silisium. Fremgangsmåte for drift av reaktoren.
NO20092111A 2009-05-29 2009-05-29 Reaktor og fremgangsmåte for fremstilling av silisium NO334785B1 (no)

Priority Applications (5)

Application Number Priority Date Filing Date Title
NO20092111A NO334785B1 (no) 2009-05-29 2009-05-29 Reaktor og fremgangsmåte for fremstilling av silisium
US13/266,850 US9156704B2 (en) 2009-05-29 2010-05-27 Reactor and method for production of silicon
CN2010800212880A CN102428027A (zh) 2009-05-29 2010-05-27 生产硅的反应器和方法
PCT/EP2010/057329 WO2010136529A1 (en) 2009-05-29 2010-05-27 Reactor and method for production of silicon
EP10725406A EP2435365A1 (en) 2009-05-29 2010-05-27 Reactor and method for production of silicon

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20092111A NO334785B1 (no) 2009-05-29 2009-05-29 Reaktor og fremgangsmåte for fremstilling av silisium

Publications (2)

Publication Number Publication Date
NO20092111L true NO20092111L (no) 2010-11-30
NO334785B1 NO334785B1 (no) 2014-05-26

Family

ID=42732551

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20092111A NO334785B1 (no) 2009-05-29 2009-05-29 Reaktor og fremgangsmåte for fremstilling av silisium

Country Status (5)

Country Link
US (1) US9156704B2 (no)
EP (1) EP2435365A1 (no)
CN (1) CN102428027A (no)
NO (1) NO334785B1 (no)
WO (1) WO2010136529A1 (no)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793116B2 (en) 2011-09-26 2017-10-17 Dynatec Engineering As Reactor and method for production of silicon by chemical vapor deposition

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102639438B (zh) * 2009-11-25 2016-04-13 戴纳泰克工程有限公司 用于生产硅的反应器和方法
US9206508B1 (en) * 2010-10-16 2015-12-08 Alleppey V. Hariharan Laser assisted chemical vapor deposition of silicon
US8388914B2 (en) * 2010-12-23 2013-03-05 Memc Electronic Materials, Inc. Systems for producing silane
US8821825B2 (en) 2010-12-23 2014-09-02 Sunedison, Inc. Methods for producing silane
DE102011077455B4 (de) * 2011-06-14 2014-02-06 Wacker Chemie Ag Verfahren zur Bestimmung von Verunreinigungen in Silicium und Reaktor zur Abscheidung von polykristallinem Silicium

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3979490A (en) 1970-12-09 1976-09-07 Siemens Aktiengesellschaft Method for the manufacture of tubular bodies of semiconductor material
DE2518853C3 (de) * 1975-04-28 1979-03-22 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum Abscheiden von elementarem Silicium aus einem Reaktionsgas
US4818495A (en) 1982-11-05 1989-04-04 Union Carbide Corporation Reactor for fluidized bed silane decomposition
KR880000618B1 (ko) * 1985-12-28 1988-04-18 재단법인 한국화학연구소 초단파 가열 유동상 반응에 의한 고순도 다결정 실리콘의 제조 방법
DE4127819A1 (de) 1991-08-22 1993-02-25 Wacker Chemitronic Verfahren und vorrichtung zum periodischen abscheiden und aufschmelzen von silicium
US5810934A (en) 1995-06-07 1998-09-22 Advanced Silicon Materials, Inc. Silicon deposition reactor apparatus
WO2000049199A1 (en) 1999-02-19 2000-08-24 Gt Equipment Technologies Inc. Method and apparatus for chemical vapor deposition of polysilicon
US6365225B1 (en) 1999-02-19 2002-04-02 G.T. Equipment Technologies, Inc. Cold wall reactor and method for chemical vapor deposition of bulk polysilicon
WO2005019106A1 (ja) 2003-08-22 2005-03-03 Tokuyama Corporation シリコン製造装置
KR100783667B1 (ko) * 2006-08-10 2007-12-07 한국화학연구원 입자형 다결정 실리콘의 제조방법 및 제조장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9793116B2 (en) 2011-09-26 2017-10-17 Dynatec Engineering As Reactor and method for production of silicon by chemical vapor deposition

Also Published As

Publication number Publication date
US9156704B2 (en) 2015-10-13
CN102428027A (zh) 2012-04-25
EP2435365A1 (en) 2012-04-04
NO334785B1 (no) 2014-05-26
WO2010136529A1 (en) 2010-12-02
US20120100060A1 (en) 2012-04-26

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