NO310347B1 - Fremgangsmåte for rensing av silisium - Google Patents
Fremgangsmåte for rensing av silisium Download PDFInfo
- Publication number
- NO310347B1 NO310347B1 NO19912074A NO912074A NO310347B1 NO 310347 B1 NO310347 B1 NO 310347B1 NO 19912074 A NO19912074 A NO 19912074A NO 912074 A NO912074 A NO 912074A NO 310347 B1 NO310347 B1 NO 310347B1
- Authority
- NO
- Norway
- Prior art keywords
- silicon
- plasma
- molten silicon
- silica
- gas
- Prior art date
Links
- 229910052710 silicon Inorganic materials 0.000 title claims description 112
- 239000010703 silicon Substances 0.000 title claims description 112
- 238000000034 method Methods 0.000 title claims description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 86
- 239000000377 silicon dioxide Substances 0.000 claims description 39
- 239000007789 gas Substances 0.000 claims description 33
- 239000011261 inert gas Substances 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 107
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 20
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 19
- 229910052796 boron Inorganic materials 0.000 description 19
- 239000001301 oxygen Substances 0.000 description 19
- 229910052760 oxygen Inorganic materials 0.000 description 19
- 239000000843 powder Substances 0.000 description 15
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 14
- 238000010438 heat treatment Methods 0.000 description 14
- 238000000746 purification Methods 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 10
- 230000006698 induction Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 8
- 238000003756 stirring Methods 0.000 description 8
- 238000010894 electron beam technology Methods 0.000 description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 6
- 239000001257 hydrogen Substances 0.000 description 6
- 229910052739 hydrogen Inorganic materials 0.000 description 6
- 239000010453 quartz Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000001307 helium Substances 0.000 description 4
- 229910052734 helium Inorganic materials 0.000 description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 4
- 239000000155 melt Substances 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 239000007800 oxidant agent Substances 0.000 description 4
- 238000002474 experimental method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 229910001634 calcium fluoride Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000011172 small scale experimental method Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/037—Purification
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Silicon Compounds (AREA)
- Photovoltaic Devices (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13826690 | 1990-05-30 | ||
| JP13826890 | 1990-05-30 | ||
| JP10434291A JP3205352B2 (ja) | 1990-05-30 | 1991-05-09 | シリコン精製方法及び装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| NO912074D0 NO912074D0 (no) | 1991-05-29 |
| NO912074L NO912074L (no) | 1991-12-02 |
| NO310347B1 true NO310347B1 (no) | 2001-06-25 |
Family
ID=27310203
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO19912074A NO310347B1 (no) | 1990-05-30 | 1991-05-29 | Fremgangsmåte for rensing av silisium |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5182091A (fr) |
| EP (1) | EP0459421B1 (fr) |
| JP (1) | JP3205352B2 (fr) |
| CA (1) | CA2043492C (fr) |
| DE (1) | DE69124287T2 (fr) |
| NO (1) | NO310347B1 (fr) |
Families Citing this family (53)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5346724A (en) * | 1991-04-12 | 1994-09-13 | Nippon Oil Company, Ltd. | Oil and fat composition for lubricating food processing machines and use thereof |
| NO180532C (no) * | 1994-09-01 | 1997-05-07 | Elkem Materials | Fremgangsmåte for fjerning av forurensninger fra smeltet silisium |
| US5753567A (en) * | 1995-08-28 | 1998-05-19 | Memc Electronic Materials, Inc. | Cleaning of metallic contaminants from the surface of polycrystalline silicon with a halogen gas or plasma |
| FR2746785B1 (fr) * | 1996-04-02 | 1998-05-22 | Pechiney Electrometallurgie | Silicium metallurgique a structure controlee destine a la synthese des halogenosilanes |
| DE69621348T2 (de) * | 1996-10-14 | 2002-09-05 | Kawasaki Steel Corp., Kobe | Verfahren und vorrichtung zur herstellung von polykristallinem silizium und verfahren zur herstellung eines siliziumsubstrats für eine solarzelle |
| NO980278L (no) * | 1997-01-22 | 1998-07-23 | Kawasaki Steel Co | FremgangsmÕte og apparatur for fjerning av bor fra silisium av metallurgisk kvalitet |
| US5972107A (en) * | 1997-08-28 | 1999-10-26 | Crystal Systems, Inc. | Method for purifying silicon |
| US6368403B1 (en) * | 1997-08-28 | 2002-04-09 | Crystal Systems, Inc. | Method and apparatus for purifying silicon |
| FR2772741B1 (fr) * | 1997-12-19 | 2000-03-10 | Centre Nat Rech Scient | Procede et installation d'affinage du silicium |
| US6632413B2 (en) | 2000-08-21 | 2003-10-14 | Astropower, Inc. | Method for purifying silicon |
| WO2002053496A1 (fr) * | 2000-12-28 | 2002-07-11 | Sumitomo Mitsubishi Silicon Corporation | Procede de moulage en continu de silicium |
| FR2827592B1 (fr) * | 2001-07-23 | 2003-08-22 | Invensil | Silicium metallurgique de haute purete et procede d'elaboration |
| JP2007513048A (ja) * | 2003-12-04 | 2007-05-24 | ダウ・コーニング・コーポレイション | 太陽電池グレードのケイ素を生産するための、冶金グレードのケイ素から不純物を除去する方法 |
| JP4766837B2 (ja) | 2004-03-03 | 2011-09-07 | 新日鉄マテリアルズ株式会社 | シリコンからのホウ素除去方法 |
| FR2871151B1 (fr) * | 2004-06-07 | 2006-08-11 | Centre Nat Rech Scient Cnrse | Installation d'affinage de silicium |
| JP4665479B2 (ja) * | 2004-09-27 | 2011-04-06 | 株式会社 アイアイエスマテリアル | 電子ビームを用いたボロン含有シリコンの精錬方法及び装置 |
| JP4632769B2 (ja) | 2004-12-09 | 2011-02-16 | シャープ株式会社 | シリコンの精製方法 |
| JP5140835B2 (ja) * | 2005-03-07 | 2013-02-13 | 新日鉄住金マテリアルズ株式会社 | 高純度シリコンの製造方法 |
| JP4741860B2 (ja) * | 2005-03-07 | 2011-08-10 | 新日鉄マテリアルズ株式会社 | 高純度のシリコンの製造方法 |
| JP4966560B2 (ja) | 2005-03-07 | 2012-07-04 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
| US7572334B2 (en) * | 2006-01-03 | 2009-08-11 | Applied Materials, Inc. | Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application |
| JP5084144B2 (ja) * | 2006-01-18 | 2012-11-28 | 新日鉄マテリアルズ株式会社 | 高純度シリコンの製造方法 |
| KR101061530B1 (ko) * | 2006-04-04 | 2011-09-01 | 6엔 실리콘 아이엔씨. | 실리콘의 정제 방법 |
| US7682585B2 (en) | 2006-04-25 | 2010-03-23 | The Arizona Board Of Regents On Behalf Of The University Of Arizona | Silicon refining process |
| FR2912397B1 (fr) * | 2007-02-14 | 2009-05-08 | Commissariat Energie Atomique | Installation d'affinage de silicium. |
| JP2008241197A (ja) * | 2007-03-28 | 2008-10-09 | Fuji Electric Systems Co Ltd | 通電加熱装置 |
| KR101247666B1 (ko) | 2007-10-03 | 2013-04-01 | 실리코르 머티리얼즈 인코포레이티드 | 실리콘 결정을 얻기 위한 실리콘 분말의 가공 방법 |
| FR2928641B1 (fr) | 2008-03-14 | 2010-03-26 | Centre Nat Rech Scient | Procede de purification de silicium pour applications photovoltaiques |
| ITMI20081085A1 (it) * | 2008-06-16 | 2009-12-17 | N E D Silicon S P A | Metodo per la preparazione di silicio di grado metallurgico di elevata purezza. |
| DE112009001990B4 (de) * | 2008-08-15 | 2018-01-25 | Ulvac, Inc. | Verfahren zum Reinigen von Silizium |
| JP5512941B2 (ja) * | 2008-08-27 | 2014-06-04 | 株式会社アルバック | シリコンの精製装置および精製方法 |
| JP2011251853A (ja) * | 2008-08-29 | 2011-12-15 | Shin-Etsu Chemical Co Ltd | 珪素の精製方法 |
| RU2381990C1 (ru) * | 2008-09-15 | 2010-02-20 | Анатолий Александрович Кравцов | Способ вакуумной очистки кремния |
| RU2403299C1 (ru) * | 2009-03-20 | 2010-11-10 | Анатолий Александрович Кравцов | Способ вакуумной очистки кремния и устройство для его осуществления (варианты) |
| IT1394029B1 (it) | 2009-05-12 | 2012-05-25 | Raysolar S R L | Metodo per la purificazione di silicio ed apparato con cui realizzarlo |
| KR100966755B1 (ko) * | 2009-05-25 | 2010-06-29 | (주)원익머트리얼즈 | 금속실리콘의 정제방법 및 그 정제장치 |
| RU2403300C1 (ru) * | 2009-06-18 | 2010-11-10 | Анатолий Александрович Кравцов | Способ вакуумной очистки кремния и устройство для его осуществления |
| KR20120031159A (ko) | 2009-07-03 | 2012-03-30 | 미쓰비시 가가꾸 가부시키가이샤 | 실리콘의 제조 방법, 실리콘 및 태양 전지용 패널 |
| US8562932B2 (en) | 2009-08-21 | 2013-10-22 | Silicor Materials Inc. | Method of purifying silicon utilizing cascading process |
| FR2950046B1 (fr) * | 2009-09-15 | 2011-11-25 | Apollon Solar | Dispositif a basse pression de fusion et purification de silicium et procede de fusion/purification/solidification |
| TWI393805B (zh) * | 2009-11-16 | 2013-04-21 | Masahiro Hoshino | Purification method of metallurgical silicon |
| CN101708850B (zh) * | 2009-11-19 | 2011-09-14 | 大连理工大学 | 连续熔炼去除多晶硅中磷和硼的方法及装置 |
| TWI397617B (zh) * | 2010-02-12 | 2013-06-01 | Masahiro Hoshino | Metal silicon purification device |
| TWI403461B (zh) | 2010-07-21 | 2013-08-01 | Masahiro Hoshino | Method and apparatus for improving yield and yield of metallurgical silicon |
| CN102834935B (zh) * | 2010-08-16 | 2015-06-03 | 星野政宏 | 用于太阳能电池的冶金硅的提纯设备和方法 |
| CN102742034B (zh) * | 2010-08-16 | 2015-10-14 | 星野政宏 | 冶金硅的提纯方法 |
| CN101948113B (zh) * | 2010-09-19 | 2014-01-01 | 江西盛丰新能源科技有限公司 | 一种物理除磷制备多晶硅的方法及设备 |
| WO2017062571A2 (fr) | 2015-10-09 | 2017-04-13 | Milwaukee Silicon, Llc | Silicium purifié, dispositifs et systèmes permattant sa production |
| CN105671474B (zh) * | 2016-03-18 | 2018-11-30 | 李光武 | 制造半导体基片的方法和装置 |
| RU2693172C1 (ru) * | 2018-10-09 | 2019-07-01 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" ФГБОУ ВО "РГРТУ" | Способ очистки металлургического кремния от примесей |
| CN109161963A (zh) * | 2018-10-29 | 2019-01-08 | 大连颐和顺新材料科技有限公司 | 一种高效回收金刚线切割硅粉制备太阳能级多晶硅的方法 |
| RU2707053C1 (ru) * | 2018-12-25 | 2019-11-21 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Рязанский государственный радиотехнический университет" | Способ очистки металлургического кремния от углерода |
| CN115872408B (zh) * | 2022-10-19 | 2023-08-11 | 北京理工大学 | 一种基于热等离子体射流的石英砂纯化方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2623413C2 (de) * | 1976-05-25 | 1985-01-10 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum Herstellen von für Halbleiterbauelemente verwendbarem Silicium |
| FR2438499A1 (fr) * | 1978-10-13 | 1980-05-09 | Anvar | Procede de purification et d'elaboration de cristaux par fusion de zone utilisant un jet de plasma et installation correspondante |
| JPS6031761B2 (ja) * | 1979-12-28 | 1985-07-24 | 富士写真フイルム株式会社 | 非晶質シリコン微粉末の製造方法 |
| DE3016807A1 (de) * | 1980-05-02 | 1981-11-05 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zur herstellung von silizium |
| CA1147698A (fr) * | 1980-10-15 | 1983-06-07 | Universite De Sherbrooke | Epuration du silicium de qualite metallurgique |
| JPS57149815A (en) * | 1981-03-05 | 1982-09-16 | Shin Etsu Chem Co Ltd | Manufacture of granular silicon |
| JPH075288B2 (ja) * | 1985-07-31 | 1995-01-25 | フォトワット・インタナショナル・ソシエテ・アノニム | 分割されたけい素をプラズマの下で精製する方法 |
| EP0274283B1 (fr) * | 1987-01-08 | 1989-05-24 | Rhone-Poulenc Chimie | Procédé de purification sous plasma de silicium divisé |
| US4680096A (en) * | 1985-12-26 | 1987-07-14 | Dow Corning Corporation | Plasma smelting process for silicon |
| JPS62292613A (ja) * | 1986-06-10 | 1987-12-19 | Kawasaki Steel Corp | 高純度けい素の精製方法 |
-
1991
- 1991-05-09 JP JP10434291A patent/JP3205352B2/ja not_active Expired - Lifetime
- 1991-05-28 DE DE69124287T patent/DE69124287T2/de not_active Expired - Lifetime
- 1991-05-28 EP EP91108736A patent/EP0459421B1/fr not_active Expired - Lifetime
- 1991-05-29 CA CA002043492A patent/CA2043492C/fr not_active Expired - Lifetime
- 1991-05-29 NO NO19912074A patent/NO310347B1/no not_active IP Right Cessation
- 1991-05-29 US US07/706,990 patent/US5182091A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| CA2043492A1 (fr) | 1991-12-01 |
| EP0459421B1 (fr) | 1997-01-22 |
| JP3205352B2 (ja) | 2001-09-04 |
| DE69124287D1 (de) | 1997-03-06 |
| JPH04228414A (ja) | 1992-08-18 |
| NO912074D0 (no) | 1991-05-29 |
| US5182091A (en) | 1993-01-26 |
| EP0459421A1 (fr) | 1991-12-04 |
| DE69124287T2 (de) | 1997-05-07 |
| NO912074L (no) | 1991-12-02 |
| CA2043492C (fr) | 2000-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK1K | Patent expired |