NO315728B1 - Multidimensjonal adresseringsarkitektur for elektroniske innretninger - Google Patents

Multidimensjonal adresseringsarkitektur for elektroniske innretninger Download PDF

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Publication number
NO315728B1
NO315728B1 NO20001469A NO20001469A NO315728B1 NO 315728 B1 NO315728 B1 NO 315728B1 NO 20001469 A NO20001469 A NO 20001469A NO 20001469 A NO20001469 A NO 20001469A NO 315728 B1 NO315728 B1 NO 315728B1
Authority
NO
Norway
Prior art keywords
electrodes
electrode
volume element
matrix
strip
Prior art date
Application number
NO20001469A
Other languages
English (en)
Norwegian (no)
Other versions
NO20001469D0 (no
NO20001469L (no
Inventor
Magnus Berggren
Per-Erik Nordal
Original Assignee
Thin Film Electronics Asa
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thin Film Electronics Asa filed Critical Thin Film Electronics Asa
Priority to NO20001469A priority Critical patent/NO315728B1/no
Publication of NO20001469D0 publication Critical patent/NO20001469D0/no
Priority to PCT/NO2001/000124 priority patent/WO2001071722A1/en
Priority to DE60129540T priority patent/DE60129540T2/de
Priority to AU42898/01A priority patent/AU776671B2/en
Priority to EP01915951A priority patent/EP1269475B1/de
Priority to AT01915951T priority patent/ATE368286T1/de
Priority to KR10-2002-7010491A priority patent/KR100524427B1/ko
Priority to RU2002128022/09A priority patent/RU2248626C2/ru
Priority to CN01806944A priority patent/CN1419696A/zh
Priority to CA002403859A priority patent/CA2403859C/en
Priority to US09/817,359 priority patent/US6424553B2/en
Priority to JP2001569819A priority patent/JP2003528354A/ja
Publication of NO20001469L publication Critical patent/NO20001469L/no
Publication of NO315728B1 publication Critical patent/NO315728B1/no

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/71—Three dimensional array
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/77—Array wherein the memory element being directly connected to the bit lines and word lines without any access device being used
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Executing Machine-Instructions (AREA)
  • Amplifiers (AREA)
  • Control Of Indicators Other Than Cathode Ray Tubes (AREA)
  • Static Random-Access Memory (AREA)
  • Electroluminescent Light Sources (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
  • Oscillators With Electromechanical Resonators (AREA)
NO20001469A 2000-03-22 2000-03-22 Multidimensjonal adresseringsarkitektur for elektroniske innretninger NO315728B1 (no)

Priority Applications (12)

Application Number Priority Date Filing Date Title
NO20001469A NO315728B1 (no) 2000-03-22 2000-03-22 Multidimensjonal adresseringsarkitektur for elektroniske innretninger
JP2001569819A JP2003528354A (ja) 2000-03-22 2001-03-22 電子装置の多次元アドレス動作アーキテクチュア
KR10-2002-7010491A KR100524427B1 (ko) 2000-03-22 2001-03-22 전자적 장치를 위한 다차원 어드레싱 아키텍쳐
DE60129540T DE60129540T2 (de) 2000-03-22 2001-03-22 Multidimensionale adressierungsarchitektur für elektronische anordnungen
AU42898/01A AU776671B2 (en) 2000-03-22 2001-03-22 Multidimensional addressing architecture for electronic devices
EP01915951A EP1269475B1 (de) 2000-03-22 2001-03-22 Multidimensionale adressierungsarchitektur für elektronische anordnungen
AT01915951T ATE368286T1 (de) 2000-03-22 2001-03-22 Multidimensionale adressierungsarchitektur für elektronische anordnungen
PCT/NO2001/000124 WO2001071722A1 (en) 2000-03-22 2001-03-22 Multidimensional addressing architecture for electronic devices
RU2002128022/09A RU2248626C2 (ru) 2000-03-22 2001-03-22 Многомерная структура адресации для электронных устройств
CN01806944A CN1419696A (zh) 2000-03-22 2001-03-22 电子器件的多维寻址结构
CA002403859A CA2403859C (en) 2000-03-22 2001-03-22 Multidimensional addressing architecture for electronic devices
US09/817,359 US6424553B2 (en) 2000-03-22 2001-03-22 Multidimensional addressing architecture for electronic devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NO20001469A NO315728B1 (no) 2000-03-22 2000-03-22 Multidimensjonal adresseringsarkitektur for elektroniske innretninger

Publications (3)

Publication Number Publication Date
NO20001469D0 NO20001469D0 (no) 2000-03-22
NO20001469L NO20001469L (no) 2001-09-24
NO315728B1 true NO315728B1 (no) 2003-10-13

Family

ID=19910912

Family Applications (1)

Application Number Title Priority Date Filing Date
NO20001469A NO315728B1 (no) 2000-03-22 2000-03-22 Multidimensjonal adresseringsarkitektur for elektroniske innretninger

Country Status (12)

Country Link
US (1) US6424553B2 (de)
EP (1) EP1269475B1 (de)
JP (1) JP2003528354A (de)
KR (1) KR100524427B1 (de)
CN (1) CN1419696A (de)
AT (1) ATE368286T1 (de)
AU (1) AU776671B2 (de)
CA (1) CA2403859C (de)
DE (1) DE60129540T2 (de)
NO (1) NO315728B1 (de)
RU (1) RU2248626C2 (de)
WO (1) WO2001071722A1 (de)

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WO2002091476A1 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Floating gate memory device using composite molecular material
AU2002340793A1 (en) * 2001-05-07 2002-11-18 Coatue Corporation Molecular memory device
WO2002091496A2 (en) 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Reversible field-programmable electric interconnects
WO2002091385A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. Molecular memory cell
US6809955B2 (en) * 2001-05-07 2004-10-26 Advanced Micro Devices, Inc. Addressable and electrically reversible memory switch
WO2002091384A1 (en) * 2001-05-07 2002-11-14 Advanced Micro Devices, Inc. A memory device with a self-assembled polymer film and method of making the same
US20020167599A1 (en) * 2001-05-08 2002-11-14 Carau Frank P. Reusable camera
US6756620B2 (en) * 2001-06-29 2004-06-29 Intel Corporation Low-voltage and interface damage-free polymer memory device
US6624457B2 (en) 2001-07-20 2003-09-23 Intel Corporation Stepped structure for a multi-rank, stacked polymer memory device and method of making same
DE60130586T2 (de) 2001-08-13 2008-06-19 Advanced Micro Devices, Inc., Sunnyvale Speicherzelle
US6838720B2 (en) * 2001-08-13 2005-01-04 Advanced Micro Devices, Inc. Memory device with active passive layers
US6806526B2 (en) 2001-08-13 2004-10-19 Advanced Micro Devices, Inc. Memory device
US6768157B2 (en) 2001-08-13 2004-07-27 Advanced Micro Devices, Inc. Memory device
US6858481B2 (en) 2001-08-13 2005-02-22 Advanced Micro Devices, Inc. Memory device with active and passive layers
GB2382706B (en) * 2001-10-31 2005-08-10 Alphamosaic Ltd Memory structure
US6762950B2 (en) * 2001-11-30 2004-07-13 Thin Film Electronics Asa Folded memory layers
KR100433407B1 (ko) * 2002-02-06 2004-05-31 삼성광주전자 주식회사 업라이트형 진공청소기
US6687147B2 (en) * 2002-04-02 2004-02-03 Hewlett-Packard Development Company, L.P. Cubic memory array with diagonal select lines
US7012276B2 (en) * 2002-09-17 2006-03-14 Advanced Micro Devices, Inc. Organic thin film Zener diodes
US7084446B2 (en) * 2003-08-25 2006-08-01 Intel Corporation Polymer memory having a ferroelectric polymer memory material with cell sizes that are asymmetric
JP2005136071A (ja) * 2003-10-29 2005-05-26 Seiko Epson Corp クロスポイント型強誘電体メモリ
NO320176B1 (no) * 2004-02-03 2005-11-07 Kim Oyhus Stablede lag av gitter-minne koblet til integrert krets.
US20060220529A1 (en) * 2005-03-31 2006-10-05 Ivan Pawlenko Large scale transportable illuminated display
GB2436893A (en) * 2006-03-31 2007-10-10 Seiko Epson Corp Inkjet printing of cross point passive matrix devices
UA81208C2 (en) * 2007-06-01 2007-12-10 Yurii Bogdanovych Zarvanytskyi Three-dimensional device for processing information and a method for processing information
BRPI0915409A2 (pt) * 2008-07-11 2015-11-03 Sharp Kk dispositivo de exibição e método para acionar o dispositivo de exibição
KR102044476B1 (ko) 2013-05-02 2019-11-13 삼성전자주식회사 터치 스크린 패널, 터치 센싱 컨트롤러 및 터치 센싱 시스템
JP2020017335A (ja) * 2016-11-25 2020-01-30 コニカミノルタ株式会社 有機ｅｌディスプレイ
CN108056634A (zh) * 2017-11-22 2018-05-22 上海未石影视文化有限公司 一种三面翻多维展台
KR102706417B1 (ko) * 2019-05-03 2024-09-13 에스케이하이닉스 주식회사 전자 장치

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US4287571A (en) * 1979-09-11 1981-09-01 International Business Machines Corporation High density transistor arrays
SU1378682A1 (ru) * 1986-05-18 1994-12-30 В.И. Овчаренко Матричный накопитель для постоянного запоминающего устройства
FR2639461A1 (fr) 1988-11-18 1990-05-25 Labo Electronique Physique Arrangement bidimensionnel de points memoire et structure de reseaux de neurones utilisant un tel arrangement
US5742086A (en) 1994-11-02 1998-04-21 Lsi Logic Corporation Hexagonal DRAM array
US5802607A (en) 1995-10-20 1998-09-08 Triplette; Walter W. Fencing jackets made from electrically conductive threads
NO972803D0 (no) 1997-06-17 1997-06-17 Opticom As Elektrisk adresserbar logisk innretning, fremgangsmåte til elektrisk adressering av samme og anvendelse av innretning og fremgangsmåte
NO304956B1 (no) 1997-07-22 1999-03-08 Opticom As Elektrodeanordning uten og med et funksjonselement, samt en elektrodeinnretning dannet av elektrodeanordninger med funksjonselement og anvendelser derav
NO309500B1 (no) 1997-08-15 2001-02-05 Thin Film Electronics Asa Ferroelektrisk databehandlingsinnretning, fremgangsmåter til dens fremstilling og utlesing, samt bruk av samme
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Also Published As

Publication number Publication date
KR20020084133A (ko) 2002-11-04
EP1269475A1 (de) 2003-01-02
AU4289801A (en) 2001-10-03
NO20001469D0 (no) 2000-03-22
US20010040828A1 (en) 2001-11-15
CA2403859A1 (en) 2001-09-27
JP2003528354A (ja) 2003-09-24
DE60129540D1 (de) 2007-09-06
WO2001071722A1 (en) 2001-09-27
US6424553B2 (en) 2002-07-23
AU776671B2 (en) 2004-09-16
KR100524427B1 (ko) 2005-11-01
CA2403859C (en) 2005-06-28
EP1269475B1 (de) 2007-07-25
RU2002128022A (ru) 2004-02-20
RU2248626C2 (ru) 2005-03-20
ATE368286T1 (de) 2007-08-15
CN1419696A (zh) 2003-05-21
DE60129540T2 (de) 2008-04-03
NO20001469L (no) 2001-09-24

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