NO813770L - Hoeytrykks plasmaavsetning av silisium. - Google Patents

Hoeytrykks plasmaavsetning av silisium.

Info

Publication number
NO813770L
NO813770L NO813770A NO813770A NO813770L NO 813770 L NO813770 L NO 813770L NO 813770 A NO813770 A NO 813770A NO 813770 A NO813770 A NO 813770A NO 813770 L NO813770 L NO 813770L
Authority
NO
Norway
Prior art keywords
silicon
carrier
plasma
accordance
gas
Prior art date
Application number
NO813770A
Other languages
English (en)
Norwegian (no)
Inventor
Israel Arnold Lesk
Murray John Rice Jr
Kalluri Ramulingeswara
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of NO813770L publication Critical patent/NO813770L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Silicon Compounds (AREA)
  • Materials For Medical Uses (AREA)
  • Medicines Containing Material From Animals Or Micro-Organisms (AREA)
NO813770A 1980-05-09 1981-11-09 Hoeytrykks plasmaavsetning av silisium. NO813770L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/148,095 US4292342A (en) 1980-05-09 1980-05-09 High pressure plasma deposition of silicon

Publications (1)

Publication Number Publication Date
NO813770L true NO813770L (no) 1981-11-12

Family

ID=22524251

Family Applications (1)

Application Number Title Priority Date Filing Date
NO813770A NO813770L (no) 1980-05-09 1981-11-09 Hoeytrykks plasmaavsetning av silisium.

Country Status (7)

Country Link
US (1) US4292342A (da)
EP (1) EP0051628A4 (da)
JP (1) JPS57500647A (da)
DK (1) DK4182A (da)
IT (1) IT1170904B (da)
NO (1) NO813770L (da)
WO (1) WO1981003133A1 (da)

Families Citing this family (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4839312A (en) * 1978-03-16 1989-06-13 Energy Conversion Devices, Inc. Fluorinated precursors from which to fabricate amorphous semiconductor material
DE2941908C2 (de) * 1979-10-17 1986-07-03 Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt Verfahren zum Herstellen einer eine Silizium-Schicht aufweisenden Solarzelle
FR2514033B1 (fr) 1981-10-02 1985-09-27 Henaff Louis Installation pour le depot de couches minces en grande surface en phase vapeur reactive par plasma
EP0081599B1 (en) * 1981-12-10 1988-02-24 Revlon, Inc. Process for making metallic leafing pigments
US4505947A (en) * 1982-07-14 1985-03-19 The Standard Oil Company (Ohio) Method for the deposition of coatings upon substrates utilizing a high pressure, non-local thermal equilibrium arc plasma
JPS60200523A (ja) * 1984-03-26 1985-10-11 Agency Of Ind Science & Technol シリコン薄膜の製造法
DE3516078A1 (de) * 1985-05-04 1986-11-06 Philips Patentverwaltung Gmbh, 2000 Hamburg Verfahren zur glimmentladungsaktivierten reaktiven abscheidung von elektrisch leitendem material aus einer gasphase
US5171491A (en) * 1986-02-04 1992-12-15 The Carborundum Company Method of producing near net shape fused cast refractories
US5017317A (en) * 1989-12-04 1991-05-21 Board Of Regents, The Uni. Of Texas System Gas phase selective beam deposition
US5135695A (en) * 1989-12-04 1992-08-04 Board Of Regents The University Of Texas System Positioning, focusing and monitoring of gas phase selective beam deposition
EP0969120B1 (en) * 1991-05-10 2003-07-30 Celestech, Inc. Method for plasma deposition
US5204144A (en) * 1991-05-10 1993-04-20 Celestech, Inc. Method for plasma deposition on apertured substrates
US5175929A (en) * 1992-03-04 1993-01-05 General Electric Company Method for producing articles by chemical vapor deposition
US5830540A (en) * 1994-09-15 1998-11-03 Eltron Research, Inc. Method and apparatus for reactive plasma surfacing
US5611883A (en) * 1995-01-09 1997-03-18 Board Of Regents, The University Of Texas System Joining ceramics and attaching fasteners to ceramics by gas phase selective beam deposition
AU5257696A (en) * 1995-04-13 1996-11-07 Xmx Corporation Gas-impermeable, chemically inert container structure for fo od and volatile substances and the method and apparatus prod ucing the same
JP3357675B2 (ja) * 1996-05-21 2002-12-16 株式会社 トクヤマ 多結晶シリコンロッドおよびその製造方法
US6406760B1 (en) 1996-06-10 2002-06-18 Celestech, Inc. Diamond film deposition on substrate arrays
US6173672B1 (en) 1997-06-06 2001-01-16 Celestech, Inc. Diamond film deposition on substrate arrays
US6112695A (en) 1996-10-08 2000-09-05 Nano Scale Surface Systems, Inc. Apparatus for plasma deposition of a thin film onto the interior surface of a container
US6689453B2 (en) 1998-11-24 2004-02-10 Research Foundation Of State University Of New York Articles with nanocomposite coatings
US6258417B1 (en) 1998-11-24 2001-07-10 Research Foundation Of State University Of New York Method of producing nanocomposite coatings
US6926876B2 (en) * 2002-01-17 2005-08-09 Paul V. Kelsey Plasma production of polycrystalline silicon
WO2007120776A2 (en) * 2006-04-14 2007-10-25 Silica Tech, Llc Plasma deposition apparatus and method for making solar cells
US20080023070A1 (en) * 2006-07-28 2008-01-31 Sanjai Sinha Methods and systems for manufacturing polycrystalline silicon and silicon-germanium solar cells
DE102008033939A1 (de) 2008-07-18 2010-01-21 Innovent E.V. Verfahren zur Beschichtung
DE102008033941A1 (de) * 2008-07-18 2010-01-28 Innovent E.V. Verfahren zum Beschichten
DE102009056437B4 (de) 2009-12-02 2013-06-27 Spawnt Private S.À.R.L. Verfahren und Vorrichtung zur Herstellung von kurzkettigen halogenierten Polysilanen

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH525705A (de) * 1968-12-24 1972-07-31 Lonza Ag Verwendung von vortex-stabilisierten Plasmabrennern zur Durchführung von chemischen Reaktionen
US3865647A (en) * 1970-09-30 1975-02-11 Siemens Ag Method for precipitation of semiconductor material
JPS5650161B2 (da) * 1972-08-07 1981-11-27
US4003770A (en) * 1975-03-24 1977-01-18 Monsanto Research Corporation Plasma spraying process for preparing polycrystalline solar cells
US4102764A (en) * 1976-12-29 1978-07-25 Westinghouse Electric Corp. High purity silicon production by arc heater reduction of silicon intermediates
US4123989A (en) * 1977-09-12 1978-11-07 Mobil Tyco Solar Energy Corp. Manufacture of silicon on the inside of a tube

Also Published As

Publication number Publication date
EP0051628A4 (en) 1982-09-15
JPS57500647A (da) 1982-04-15
WO1981003133A1 (en) 1981-11-12
IT8148316A0 (it) 1981-04-21
IT8148316A1 (it) 1982-10-21
IT1170904B (it) 1987-06-03
US4292342A (en) 1981-09-29
DK4182A (da) 1982-01-08
EP0051628A1 (en) 1982-05-19

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