NO943838L - System for måling av filmtykkelse - Google Patents
System for måling av filmtykkelseInfo
- Publication number
- NO943838L NO943838L NO943838A NO943838A NO943838L NO 943838 L NO943838 L NO 943838L NO 943838 A NO943838 A NO 943838A NO 943838 A NO943838 A NO 943838A NO 943838 L NO943838 L NO 943838L
- Authority
- NO
- Norway
- Prior art keywords
- thin
- thickness
- film structure
- measure
- film
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
- G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
- G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
- G01B11/0625—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating with measurement of absorption or reflection
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Length Measuring Devices By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
System (20) for å utføre tykkelsesmålInger l en tynnfllmstruktur (11) ved å anvende en Inkoherent eller koherent koblet strukturert overflate (16). Et system (20) anvendes for å måle tykkelsen på tynnfllmsjiktet (14) til en fllmstruktur (11) ved hvilket polerte og strukturerte overflater er koherent koblet sammen. Synlig lys anvendes for å måle tykkelsen på tynne, bundne skiver som har en slipt øvre overflate (16), eller infrarødt lys anvendes for å måle tykkelsen på tykke sllisiumskiver (10) hvor en overflate er slipt og den andre er polert. Andre systemer bruker en struk- turert overflate som er inkoherent koblet til en tynnfllmstruktur (11) for å belyse tynnfllmstrukturen (11) ved mange vinkler. Systemene frembringer inter- ferenskanter som detekteres (25a) og opptegnes (28), og multlspektral mønstersammenllgnlng anvendes ved en datamaskin (29) for å beregne filmtykkelsen basert på spredningskarakterlstlkken i en katalog (30) med lagrede interferensmønstre.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/134,728 US5452953A (en) | 1993-10-12 | 1993-10-12 | Film thickness measurement of structures containing a scattering surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| NO943838D0 NO943838D0 (no) | 1994-10-11 |
| NO943838L true NO943838L (no) | 1995-04-18 |
Family
ID=22464713
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NO943838A NO943838L (no) | 1993-10-12 | 1994-10-11 | System for måling av filmtykkelse |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US5452953A (no) |
| EP (1) | EP0647827B1 (no) |
| JP (1) | JP2730864B2 (no) |
| DE (1) | DE69423839T2 (no) |
| IL (1) | IL111217A (no) |
| NO (1) | NO943838L (no) |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5473433A (en) * | 1993-12-07 | 1995-12-05 | At&T Corp. | Method of high yield manufacture of VLSI type integrated circuit devices by determining critical surface characteristics of mounting films |
| US5555474A (en) * | 1994-12-21 | 1996-09-10 | Integrated Process Equipment Corp. | Automatic rejection of diffraction effects in thin film metrology |
| US5640242A (en) * | 1996-01-31 | 1997-06-17 | International Business Machines Corporation | Assembly and method for making in process thin film thickness measurments |
| JPH10329015A (ja) * | 1997-03-24 | 1998-12-15 | Canon Inc | 研磨装置および研磨方法 |
| US6366861B1 (en) * | 1997-04-25 | 2002-04-02 | Applied Materials, Inc. | Method of determining a wafer characteristic using a film thickness monitor |
| US6275297B1 (en) | 1998-08-19 | 2001-08-14 | Sc Technology | Method of measuring depths of structures on a semiconductor substrate |
| US8531678B2 (en) * | 1999-07-09 | 2013-09-10 | Nova Measuring Instruments, Ltd. | Method and system for measuring patterned structures |
| IL130874A (en) * | 1999-07-09 | 2002-12-01 | Nova Measuring Instr Ltd | System and method for measuring pattern structures |
| US6650426B1 (en) | 1999-07-12 | 2003-11-18 | Sc Technology, Inc. | Endpoint determination for recess etching to a precise depth |
| US6891626B2 (en) * | 2000-01-26 | 2005-05-10 | Timbre Technologies, Inc. | Caching of intra-layer calculations for rapid rigorous coupled-wave analyses |
| US7365860B2 (en) * | 2000-12-21 | 2008-04-29 | Sensory Analytics | System capable of determining applied and anodized coating thickness of a coated-anodized product |
| US6674533B2 (en) * | 2000-12-21 | 2004-01-06 | Joseph K. Price | Anodizing system with a coating thickness monitor and an anodized product |
| US7274463B2 (en) * | 2003-12-30 | 2007-09-25 | Sensory Analytics | Anodizing system with a coating thickness monitor and an anodized product |
| US7196800B1 (en) * | 2001-07-26 | 2007-03-27 | Advanced Micro Devices, Inc. | Semiconductor die analysis as a function of optical reflections from the die |
| US6903340B1 (en) * | 2001-10-23 | 2005-06-07 | Juan Cesar Scaiano | Thin film analyzer |
| US7136168B2 (en) * | 2002-08-09 | 2006-11-14 | Angstrovision, Inc. | Interferometric topological metrology with pre-established reference scale |
| US20040027582A1 (en) * | 2002-08-09 | 2004-02-12 | Lev Dulman | Method and apparatus for determining sample composition with an interferometer |
| US20040027583A1 (en) * | 2002-08-09 | 2004-02-12 | Lev Dulman | Pre-established reference scale for interferometric topological metrology |
| US6999181B2 (en) * | 2002-08-09 | 2006-02-14 | Angstrovision, Inc. | Advanced signal processing technique for translating fringe line disturbances into sample height at a particular position above an interferometer's sample stage |
| CN101530983B (zh) * | 2002-10-17 | 2011-03-16 | 株式会社荏原制作所 | 抛光状态监测装置和抛光装置以及方法 |
| DE10324474B4 (de) | 2003-05-30 | 2006-05-04 | Leica Microsystems Semiconductor Gmbh | Vorrichtung zur Wafer-Inspektion |
| WO2007103304A2 (en) * | 2006-03-07 | 2007-09-13 | Sensory Analytics | A mobile apparatus capable of surface measurements of a coating thickness |
| TWI320485B (en) * | 2007-03-08 | 2010-02-11 | Test Research Inc | Open-circuit testing system and method |
| CN113624457B (zh) * | 2021-08-19 | 2024-04-30 | 中国科学院合肥物质科学研究院 | 基于光学衍射的薄膜均匀性检测系统 |
| CN120778013B (zh) * | 2025-08-06 | 2026-02-17 | 佛山市博顿光电科技有限公司 | 一种智能宽光谱膜厚实时监控系统及方法 |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3631526A (en) * | 1969-11-05 | 1971-12-28 | Brun Sensor Systems Inc | Apparatus and methods for eliminating interference effect errors in dual-beam infrared measurements |
| US3693025A (en) * | 1969-11-28 | 1972-09-19 | Brun Sensor Systems Inc | Apparatus and method for eliminating interference errors in dual-beam infrared reflection measurements on a diffusely reflecting surface by geometrical elimination of interference-producing specularly-reflected radiation components |
| US3870884A (en) * | 1973-08-24 | 1975-03-11 | Infra Systems Inc | Apparatus for negating effect of scattered signals upon accuracy of dual-beam infrared measurements |
| JPS5535214A (en) * | 1978-09-04 | 1980-03-12 | Asahi Chem Ind Co Ltd | Method and device for film-thickness measurement making use of infrared-ray interference |
| JPH0224502A (ja) * | 1988-07-12 | 1990-01-26 | Dainippon Screen Mfg Co Ltd | 膜厚測定方法 |
| JPH02115704A (ja) * | 1988-10-25 | 1990-04-27 | Omron Tateisi Electron Co | 粗面の液膜厚測定方法及びその測定装置 |
| JPH06244261A (ja) * | 1990-12-31 | 1994-09-02 | Texas Instr Inc <Ti> | 半導体装置製造プロセス制御用センサ |
| JPH05113319A (ja) * | 1991-08-30 | 1993-05-07 | Toshiba Corp | ウエハ層厚さ測定方法 |
| US5333049A (en) * | 1991-12-06 | 1994-07-26 | Hughes Aircraft Company | Apparatus and method for interferometrically measuring the thickness of thin films using full aperture irradiation |
| US5293214A (en) * | 1991-12-06 | 1994-03-08 | Hughes Aircraft Company | Apparatus and method for performing thin film layer thickness metrology by deforming a thin film layer into a reflective condenser |
-
1993
- 1993-10-12 US US08/134,728 patent/US5452953A/en not_active Expired - Lifetime
-
1994
- 1994-10-10 EP EP94307400A patent/EP0647827B1/en not_active Expired - Lifetime
- 1994-10-10 IL IL11121794A patent/IL111217A/en not_active IP Right Cessation
- 1994-10-10 DE DE69423839T patent/DE69423839T2/de not_active Expired - Lifetime
- 1994-10-11 NO NO943838A patent/NO943838L/no unknown
- 1994-10-12 JP JP6245981A patent/JP2730864B2/ja not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2730864B2 (ja) | 1998-03-25 |
| JPH07198339A (ja) | 1995-08-01 |
| DE69423839D1 (de) | 2000-05-11 |
| DE69423839T2 (de) | 2000-12-14 |
| US5452953A (en) | 1995-09-26 |
| NO943838D0 (no) | 1994-10-11 |
| IL111217A (en) | 1996-11-14 |
| IL111217A0 (en) | 1994-12-29 |
| EP0647827A3 (en) | 1997-01-29 |
| EP0647827A2 (en) | 1995-04-12 |
| EP0647827B1 (en) | 2000-04-05 |
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