NO974454L - FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller - Google Patents

FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller

Info

Publication number
NO974454L
NO974454L NO974454A NO974454A NO974454L NO 974454 L NO974454 L NO 974454L NO 974454 A NO974454 A NO 974454A NO 974454 A NO974454 A NO 974454A NO 974454 L NO974454 L NO 974454L
Authority
NO
Norway
Prior art keywords
producing
silicon
solar cells
polycrystalline silicon
plates
Prior art date
Application number
NO974454A
Other languages
English (en)
Norwegian (no)
Other versions
NO974454D0 (no
Inventor
Fukuo Aratani
Yoshiei Kato
Yasuhiko Sakaguchi
Noriyoshi Yuge
Hiroyuki Baba
Naomichi Nakamura
Kazuhiro Hanazawa
Original Assignee
Kawasaki Steel Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to EP96933633A priority Critical patent/EP0869102B1/fr
Priority to CA002211028A priority patent/CA2211028C/fr
Priority to PCT/JP1996/002965 priority patent/WO1998016466A1/fr
Priority claimed from PCT/JP1996/002965 external-priority patent/WO1998016466A1/fr
Application filed by Kawasaki Steel Co filed Critical Kawasaki Steel Co
Priority to NO974454A priority patent/NO974454L/no
Publication of NO974454D0 publication Critical patent/NO974454D0/no
Publication of NO974454L publication Critical patent/NO974454L/no

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
NO974454A 1996-10-14 1997-09-26 FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller NO974454L (no)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP96933633A EP0869102B1 (fr) 1996-10-14 1996-10-14 Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
CA002211028A CA2211028C (fr) 1996-10-14 1996-10-14 Procede et appareil de production de silicium polycristallin et procede de fabrication de plaquettes de silicium destinees a des piles solaires
PCT/JP1996/002965 WO1998016466A1 (fr) 1996-10-14 1996-10-14 Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
NO974454A NO974454L (no) 1996-10-14 1997-09-26 FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
CA002211028A CA2211028C (fr) 1996-10-14 1996-10-14 Procede et appareil de production de silicium polycristallin et procede de fabrication de plaquettes de silicium destinees a des piles solaires
PCT/JP1996/002965 WO1998016466A1 (fr) 1996-10-14 1996-10-14 Procede et appareil de preparation de silicium polycristallin et procede de preparation d'un substrat en silicium pour cellule solaire
NO974454A NO974454L (no) 1996-10-14 1997-09-26 FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller

Publications (2)

Publication Number Publication Date
NO974454D0 NO974454D0 (no) 1997-09-26
NO974454L true NO974454L (no) 1998-04-23

Family

ID=25679496

Family Applications (1)

Application Number Title Priority Date Filing Date
NO974454A NO974454L (no) 1996-10-14 1997-09-26 FremgangsmÕte og anordning for fremstilling av polykrystallinsk silisium og fremgangsmÕte ved fremstilling av silisiumplater for solceller

Country Status (2)

Country Link
CA (1) CA2211028C (fr)
NO (1) NO974454L (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100444410C (zh) * 2006-05-08 2008-12-17 高文秀 P型太阳能电池等级多晶硅制备工艺
WO2017062571A2 (fr) 2015-10-09 2017-04-13 Milwaukee Silicon, Llc Silicium purifié, dispositifs et systèmes permattant sa production

Also Published As

Publication number Publication date
CA2211028C (fr) 2002-04-16
CA2211028A1 (fr) 1998-04-14
NO974454D0 (no) 1997-09-26

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Legal Events

Date Code Title Description
FC2A Withdrawal, rejection or dismissal of laid open patent application