NO995343L - Fotodetektor for flere bõnd i strõlingsomrõdet for infrarødt lys - Google Patents

Fotodetektor for flere bõnd i strõlingsomrõdet for infrarødt lys

Info

Publication number
NO995343L
NO995343L NO995343A NO995343A NO995343L NO 995343 L NO995343 L NO 995343L NO 995343 A NO995343 A NO 995343A NO 995343 A NO995343 A NO 995343A NO 995343 L NO995343 L NO 995343L
Authority
NO
Norway
Prior art keywords
photodetector
infrared radiation
radiation area
multiple boundary
boundary
Prior art date
Application number
NO995343A
Other languages
English (en)
Norwegian (no)
Other versions
NO995343D0 (no
Inventor
Mark A Dodd
Original Assignee
Lockheed Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lockheed Corp filed Critical Lockheed Corp
Publication of NO995343D0 publication Critical patent/NO995343D0/no
Publication of NO995343L publication Critical patent/NO995343L/no

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B82NANOTECHNOLOGY
    • B82YSPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00Nanooptics, e.g. quantum optics or photonic crystals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10Integrated devices
    • H10F39/12Image sensors
    • H10F39/18Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184Infrared image sensors
    • H10F39/1847Multispectral infrared image sensors having a stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10FINORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80Constructional details of image sensors
    • H10F39/805Coatings

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
NO995343A 1998-11-03 1999-11-02 Fotodetektor for flere bõnd i strõlingsomrõdet for infrarødt lys NO995343L (no)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/185,262 US6355939B1 (en) 1998-11-03 1998-11-03 Multi-band infrared photodetector

Publications (2)

Publication Number Publication Date
NO995343D0 NO995343D0 (no) 1999-11-02
NO995343L true NO995343L (no) 2000-05-04

Family

ID=22680277

Family Applications (1)

Application Number Title Priority Date Filing Date
NO995343A NO995343L (no) 1998-11-03 1999-11-02 Fotodetektor for flere bõnd i strõlingsomrõdet for infrarødt lys

Country Status (4)

Country Link
US (1) US6355939B1 (de)
EP (1) EP0999600A3 (de)
JP (1) JP2000150927A (de)
NO (1) NO995343L (de)

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US7046719B2 (en) 2001-03-08 2006-05-16 Motorola, Inc. Soft handoff between cellular systems employing different encoding rates
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US6992321B2 (en) 2001-07-13 2006-01-31 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices utilizing piezoelectric materials
US6646293B2 (en) 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
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US6667196B2 (en) 2001-07-25 2003-12-23 Motorola, Inc. Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the method
US6594414B2 (en) 2001-07-25 2003-07-15 Motorola, Inc. Structure and method of fabrication for an optical switch
US6585424B2 (en) 2001-07-25 2003-07-01 Motorola, Inc. Structure and method for fabricating an electro-rheological lens
US6639249B2 (en) 2001-08-06 2003-10-28 Motorola, Inc. Structure and method for fabrication for a solid-state lighting device
US6462360B1 (en) 2001-08-06 2002-10-08 Motorola, Inc. Integrated gallium arsenide communications systems
US6589856B2 (en) 2001-08-06 2003-07-08 Motorola, Inc. Method and apparatus for controlling anti-phase domains in semiconductor structures and devices
US20030034491A1 (en) 2001-08-14 2003-02-20 Motorola, Inc. Structure and method for fabricating semiconductor structures and devices for detecting an object
US6673667B2 (en) 2001-08-15 2004-01-06 Motorola, Inc. Method for manufacturing a substantially integral monolithic apparatus including a plurality of semiconductor materials
KR100536665B1 (ko) * 2001-08-21 2005-12-14 주식회사 대우일렉트로닉스 적외선 흡수 볼로메터 제조 방법
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US6897447B2 (en) * 2002-12-05 2005-05-24 Lockheed Martin Corporation Bias controlled multi-spectral infrared photodetector and imager
US7135698B2 (en) * 2002-12-05 2006-11-14 Lockheed Martin Corporation Multi-spectral infrared super-pixel photodetector and imager
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US6965128B2 (en) 2003-02-03 2005-11-15 Freescale Semiconductor, Inc. Structure and method for fabricating semiconductor microresonator devices
US6906800B2 (en) 2003-03-14 2005-06-14 The United States Of America As Represented By The Secretary Of The Air Force Polarimeter using quantum well stacks separated by gratings
US6979825B1 (en) 2003-04-11 2005-12-27 The United States Of America As Represented By The Secretary Of The Army Quantum-grid infrared photodetector (QGIP) spectrometers and related methods
US6888179B2 (en) * 2003-04-17 2005-05-03 Bae Systems Information And Electronic Systems Integration Inc GaAs substrate with Sb buffering for high in devices
US7427758B2 (en) 2003-05-28 2008-09-23 Opto-Knowledge Systems, Inc. Cryogenically cooled adjustable apertures for infra-red cameras
US7214195B2 (en) * 2003-07-23 2007-05-08 Lockheed Martin Corporation Method of and apparatus for detecting diseased tissue by sensing two bands of infrared radiation
US20050069227A1 (en) * 2003-09-29 2005-03-31 Mark Steele Flexible package having integrated slit member
US7170049B2 (en) * 2003-12-30 2007-01-30 Dxray, Inc. Pixelated cadmium zinc telluride based photon counting mode detector
US7659536B2 (en) * 2004-09-14 2010-02-09 Stc.Unm High performance hyperspectral detectors using photon controlling cavities
US8659664B2 (en) * 2007-03-23 2014-02-25 Flir Systems, Inc. Thermography camera configured for leak detection
US8653461B1 (en) 2007-03-23 2014-02-18 Flir Systems, Inc. Thermography camera tuned to detect absorption of infrared radiation in a selected spectral bandwidth
US8466964B2 (en) * 2007-04-02 2013-06-18 Opto-Knowledge Systems, Inc. Multispectral uncooled thermal infrared camera system
US8164813B1 (en) 2007-06-16 2012-04-24 Opto-Knowledge Systems, Inc. Non-circular continuous variable aperture or shutter for infrared cameras
CN103152582B (zh) * 2007-12-07 2015-02-25 松下电器产业株式会社 图像处理装置、图像处理方法
FR2937791B1 (fr) * 2008-10-24 2010-11-26 Thales Sa Dispositif d'imagerie polarimetrique optimise par rapport au contraste de polarisation
US20110068423A1 (en) * 2009-09-18 2011-03-24 International Business Machines Corporation Photodetector with wavelength discrimination, and method for forming the same and design structure
US8836793B1 (en) 2010-08-13 2014-09-16 Opto-Knowledge Systems, Inc. True color night vision (TCNV) fusion
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US9252182B2 (en) 2012-09-05 2016-02-02 Northrop Grumman Systems Corporation Infrared multiplier for photo-conducting sensors
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Also Published As

Publication number Publication date
EP0999600A2 (de) 2000-05-10
US6355939B1 (en) 2002-03-12
JP2000150927A (ja) 2000-05-30
EP0999600A3 (de) 2003-08-13
NO995343D0 (no) 1999-11-02

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