PL127059B1 - High power amplifying and switching system - Google Patents

High power amplifying and switching system Download PDF

Info

Publication number
PL127059B1
PL127059B1 PL1979220495A PL22049579A PL127059B1 PL 127059 B1 PL127059 B1 PL 127059B1 PL 1979220495 A PL1979220495 A PL 1979220495A PL 22049579 A PL22049579 A PL 22049579A PL 127059 B1 PL127059 B1 PL 127059B1
Authority
PL
Poland
Prior art keywords
circuit
switch
transistor
terminal
amplifier
Prior art date
Application number
PL1979220495A
Other languages
English (en)
Polish (pl)
Other versions
PL220495A1 (de
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of PL220495A1 publication Critical patent/PL220495A1/xx
Publication of PL127059B1 publication Critical patent/PL127059B1/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/10—Modifications for increasing the maximum permissible switched voltage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/785—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling field-effect transistor switches
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/211—Gated diodes
    • H10D12/212—Gated diodes having PN junction gates, e.g. field controlled diodes

Landscapes

  • Amplifiers (AREA)
  • Electronic Switches (AREA)
PL1979220495A 1978-12-20 1979-12-18 High power amplifying and switching system PL127059B1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US97202578A 1978-12-20 1978-12-20

Publications (2)

Publication Number Publication Date
PL220495A1 PL220495A1 (de) 1980-09-08
PL127059B1 true PL127059B1 (en) 1983-09-30

Family

ID=25519064

Family Applications (1)

Application Number Title Priority Date Filing Date
PL1979220495A PL127059B1 (en) 1978-12-20 1979-12-18 High power amplifying and switching system

Country Status (24)

Country Link
JP (1) JPS55501042A (de)
KR (1) KR830000498B1 (de)
AT (1) ATA906079A (de)
AU (1) AU524717B2 (de)
BE (1) BE880730A (de)
CA (1) CA1122331A (de)
DD (1) DD152664A5 (de)
DE (1) DE2953403C2 (de)
DK (1) DK347680A (de)
ES (1) ES487068A1 (de)
FR (1) FR2445075A1 (de)
GB (1) GB2050716B (de)
HK (1) HK69484A (de)
HU (1) HU181029B (de)
IE (1) IE48720B1 (de)
IL (1) IL58972A (de)
IN (1) IN153145B (de)
IT (1) IT1126605B (de)
NL (1) NL7920187A (de)
PL (1) PL127059B1 (de)
SE (1) SE424685B (de)
SG (1) SG34984G (de)
TR (1) TR20826A (de)
WO (1) WO1980001346A1 (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4303831A (en) * 1979-07-30 1981-12-01 Bell Telephone Laboratories, Incorporated Optically triggered linear bilateral switch
US4275308A (en) * 1980-05-30 1981-06-23 Bell Telephone Laboratories, Incorporated Optically toggled device
FR2497423A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes, comportant un circuit d'alimentation en courant alternatif redresse et de commande d'une charge a l'aide de thyristors de commutation
FR2497424A1 (fr) * 1980-12-31 1982-07-02 Telemecanique Electrique Appareil detecteur du type a deux bornes alimente en courant alternatif redresse sous une tension pouvant varier dans une large gamme avec commande de la charge a l'aide de thyristors de commutation

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3365588A (en) * 1968-01-23 Us Navy Multi-channel calibration circuit for generating a step-wave output voltage
DE1762842A1 (de) * 1968-09-07 1970-10-22 Richard Helleis Elektronischer Schalter,gesteuert durch zwei Lichtschranken
US3708672A (en) * 1971-03-29 1973-01-02 Honeywell Inf Systems Solid state relay using photo-coupled isolators
US4021683A (en) * 1975-01-03 1977-05-03 National Research Development Corporation Electronic switching circuits
US4060821A (en) * 1976-06-21 1977-11-29 General Electric Co. Field controlled thyristor with buried grid

Also Published As

Publication number Publication date
DK347680A (da) 1980-08-12
ATA906079A (de) 1984-08-15
IL58972A (en) 1982-05-31
AU524717B2 (en) 1982-09-30
IE792475L (en) 1980-06-20
IN153145B (de) 1984-06-09
JPS55501042A (de) 1980-11-27
IL58972A0 (en) 1980-03-31
DE2953403C2 (de) 1983-01-20
DE2953403T1 (de) 1980-12-18
HU181029B (en) 1983-05-30
GB2050716B (en) 1983-03-09
IT1126605B (it) 1986-05-21
BE880730A (fr) 1980-04-16
SG34984G (en) 1985-02-08
GB2050716A (en) 1981-01-07
IT7928208A0 (it) 1979-12-19
FR2445075A1 (fr) 1980-07-18
HK69484A (en) 1984-09-14
TR20826A (tr) 1982-09-01
IE48720B1 (en) 1985-05-01
CA1122331A (en) 1982-04-20
WO1980001346A1 (en) 1980-06-26
SE424685B (sv) 1982-08-02
NL7920187A (nl) 1980-10-31
ES487068A1 (es) 1980-09-16
DD152664A5 (de) 1981-12-02
AU5386779A (en) 1980-06-26
KR830000498B1 (ko) 1983-03-10
PL220495A1 (de) 1980-09-08
SE8005705L (sv) 1980-08-13

Similar Documents

Publication Publication Date Title
CN110739950B (zh) 功率晶体管控制信号门控
EP0166390B1 (de) Halbleiterschalter
JP6413104B2 (ja) サージ保護素子
US4816892A (en) Semiconductor device having turn-on and turn-off capabilities
GB2261990A (en) IGBT With integrated free-wheel diode
JPH0587153B2 (de)
KR100286842B1 (ko) 역전압 보호 회로를 구비한 파워 디바이스
US11948937B2 (en) Semiconductor integrated circuit with edge structure to decrease leakage current
CN116053293A (zh) 用于抗单粒子烧毁的P-GaN增强型氮化镓高电子迁移率晶体管
EP0177665A1 (de) Ausschaltbare Halbleiterschaltvorrichtung
PL127059B1 (en) High power amplifying and switching system
Sugino et al. Latchup-free Schottky-barrier CMOS
US20250220938A1 (en) Semiconductor device and power conversion device
KR900000179B1 (ko) Mos형 집적회로
US6751077B2 (en) ESD protection configuration for signal inputs and outputs with overvoltage tolerance
CN105070752B (zh) 一种具有集成二极管的异质结器件
EP0141926B1 (de) Lichtgesteuerter monolitischer Nulldurchgangstreiber für einer Triac
US6559515B1 (en) Insulating wall between power components
US12334922B2 (en) Ternary logic element and ternary logic system including same
CN121285017B (zh) 一种常关型的栅控结型场效应晶体管
US10466732B2 (en) Switching regulator and control circuit and control method thereof
JP2025093287A (ja) ワイドバンドギャップフォトリレー
CN121035088A (zh) 一种功率mosfet半导体的封装结构
JP2026040392A (ja) 半導体素子のための双方向スイッチ
JPH0611105B2 (ja) 高耐圧半導体スイッチ