PL1732129T3 - Wysokotemperaturowa komórka parownika i sposób odparowywania materiałów wysokotopliwych - Google Patents

Wysokotemperaturowa komórka parownika i sposób odparowywania materiałów wysokotopliwych

Info

Publication number
PL1732129T3
PL1732129T3 PL06011125T PL06011125T PL1732129T3 PL 1732129 T3 PL1732129 T3 PL 1732129T3 PL 06011125 T PL06011125 T PL 06011125T PL 06011125 T PL06011125 T PL 06011125T PL 1732129 T3 PL1732129 T3 PL 1732129T3
Authority
PL
Poland
Prior art keywords
temperature evaporator
evaporating
high temperature
melting materials
evaporator cell
Prior art date
Application number
PL06011125T
Other languages
English (en)
Inventor
Wolfgang Braun
Albrecht Fischer
Original Assignee
Createc Fischer & Co Gmbh
Forschungsverbund Berlin Ev
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Createc Fischer & Co Gmbh, Forschungsverbund Berlin Ev filed Critical Createc Fischer & Co Gmbh
Publication of PL1732129T3 publication Critical patent/PL1732129T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C30B23/06—Heating of the deposition chamber, the substrate or the materials to be evaporated
    • C30B23/066—Heating of the material to be evaporated

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physical Vapour Deposition (AREA)
PL06011125T 2005-06-06 2006-05-30 Wysokotemperaturowa komórka parownika i sposób odparowywania materiałów wysokotopliwych PL1732129T3 (pl)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102005025935A DE102005025935B4 (de) 2005-06-06 2005-06-06 Hochtemperatur-Verdampferzelle und Verfahren zur Verdampfung hochschmelzender Materialien
EP06011125.9A EP1732129B8 (de) 2005-06-06 2006-05-30 Hochtemperatur-Verdampferzelle und Verfahren zur Verdampfung hochschmelzender Materialien

Publications (1)

Publication Number Publication Date
PL1732129T3 true PL1732129T3 (pl) 2014-07-31

Family

ID=36699030

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06011125T PL1732129T3 (pl) 2005-06-06 2006-05-30 Wysokotemperaturowa komórka parownika i sposób odparowywania materiałów wysokotopliwych

Country Status (3)

Country Link
EP (1) EP1732129B8 (pl)
DE (1) DE102005025935B4 (pl)
PL (1) PL1732129T3 (pl)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007035166B4 (de) 2007-07-27 2010-07-29 Createc Fischer & Co. Gmbh Hochtemperatur-Verdampferzelle mit parallel geschalteten Heizbereichen, Verfahren zu deren Betrieb und deren Verwendung in Beschichtungsanlagen
WO2010019213A2 (en) 2008-08-11 2010-02-18 Veeco Instruments Inc. Vacuum deposition sources having heated effusion orifices
DE102009046986A1 (de) * 2009-11-23 2011-06-09 44Solar S.A.R.L. Tiegel für einen Elektronenstrahlverdampfer und Betriebsverfahren für den Elektronenstrahlverdampfer
DE102011016814B4 (de) * 2011-04-12 2017-03-23 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. Verdampferzellen-Verschlusseinrichtung für eine Beschichtungsanlage
CN111663105A (zh) * 2020-05-26 2020-09-15 南方科技大学 超高真空电子束蒸发器、电子束镀膜装置

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1219547A (en) * 1983-04-04 1987-03-24 Prem Nath Apparatus for and method of continuously depositing a highly conductive, highly transmissive film
US5122389A (en) * 1990-03-02 1992-06-16 Fuji Photo Film Co., Ltd. Vacuum evaporation method and apparatus
US5522955A (en) * 1994-07-07 1996-06-04 Brodd; Ralph J. Process and apparatus for producing thin lithium coatings on electrically conductive foil for use in solid state rechargeable electrochemical cells
JP2836518B2 (ja) * 1995-02-28 1998-12-14 日本電気株式会社 蒸着装置
JP3779373B2 (ja) * 1996-04-22 2006-05-24 株式会社ムサシノエンジニアリング 真空蒸着装置
JP2003188115A (ja) * 2001-12-17 2003-07-04 Shin Meiwa Ind Co Ltd 半導体配線形成方法及び装置、半導体デバイス製造方法及び装置、並びにウエハ
JP4086786B2 (ja) * 2004-01-05 2008-05-14 株式会社エイコー・エンジニアリング ハイブリッドｅｂセルとそれを使用した成膜材料蒸発方法

Also Published As

Publication number Publication date
DE102005025935B4 (de) 2007-06-28
EP1732129A3 (de) 2007-08-01
EP1732129B1 (de) 2014-02-12
EP1732129A2 (de) 2006-12-13
EP1732129B8 (de) 2014-04-09
DE102005025935A1 (de) 2006-12-21

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