PL1798781T3 - Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania - Google Patents

Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania

Info

Publication number
PL1798781T3
PL1798781T3 PL06291935T PL06291935T PL1798781T3 PL 1798781 T3 PL1798781 T3 PL 1798781T3 PL 06291935 T PL06291935 T PL 06291935T PL 06291935 T PL06291935 T PL 06291935T PL 1798781 T3 PL1798781 T3 PL 1798781T3
Authority
PL
Poland
Prior art keywords
production
vertical structure
led diode
diode
led
Prior art date
Application number
PL06291935T
Other languages
English (en)
Inventor
Jong Wook Kim
Jae Wan Choi
Hyun Kyong Cho
Jong Ho Na
Jun Ho Jang
Original Assignee
Lg Electronics Inc
Lg Innotek Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020050123857A external-priority patent/KR100705225B1/ko
Priority claimed from KR20060063586A external-priority patent/KR100808197B1/ko
Application filed by Lg Electronics Inc, Lg Innotek Co Ltd filed Critical Lg Electronics Inc
Publication of PL1798781T3 publication Critical patent/PL1798781T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/27—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials
    • H10P14/271—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials characterised by the preparation of substrate for selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
PL06291935T 2005-12-15 2006-12-14 Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania PL1798781T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
KR1020050123857A KR100705225B1 (ko) 2005-12-15 2005-12-15 수직형 발광소자의 제조방법
KR20060063586A KR100808197B1 (ko) 2006-07-06 2006-07-06 수직형 발광 소자 및 그 제조방법
EP06291935A EP1798781B1 (en) 2005-12-15 2006-12-14 LED having vertical structure and method for fabricating the same

Publications (1)

Publication Number Publication Date
PL1798781T3 true PL1798781T3 (pl) 2010-03-31

Family

ID=37814322

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06291935T PL1798781T3 (pl) 2005-12-15 2006-12-14 Dioda LED posiadająca pionową strukturę i sposób jej wytwarzania

Country Status (6)

Country Link
US (2) US7812357B2 (pl)
EP (1) EP1798781B1 (pl)
JP (1) JP5270088B2 (pl)
CN (2) CN103151437A (pl)
DE (1) DE602006008256D1 (pl)
PL (1) PL1798781T3 (pl)

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CN109860022B (zh) * 2013-12-20 2022-09-23 华为技术有限公司 半导体器件和制备半导体器件的方法
JP6328497B2 (ja) * 2014-06-17 2018-05-23 ソニーセミコンダクタソリューションズ株式会社 半導体発光素子、パッケージ素子、および発光パネル装置
US10707377B2 (en) * 2018-04-19 2020-07-07 Lg Electronics Inc. Display device using semiconductor light emitting device and method for manufacturing the same
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CN116368622A (zh) * 2020-11-11 2023-06-30 苏州晶湛半导体有限公司 一种发光结构及其制备方法

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Also Published As

Publication number Publication date
US7812357B2 (en) 2010-10-12
US20070164298A1 (en) 2007-07-19
CN102157644A (zh) 2011-08-17
CN102157644B (zh) 2012-12-26
JP2007165908A (ja) 2007-06-28
JP5270088B2 (ja) 2013-08-21
US8202753B2 (en) 2012-06-19
US20110059564A1 (en) 2011-03-10
EP1798781A3 (en) 2007-10-10
EP1798781A2 (en) 2007-06-20
EP1798781B1 (en) 2009-08-05
DE602006008256D1 (de) 2009-09-17
CN103151437A (zh) 2013-06-12

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