PL1880042T3 - Niskotemperaturowa termoelektroliza kwarcu - Google Patents

Niskotemperaturowa termoelektroliza kwarcu

Info

Publication number: PL1880042T3
Authority: PL; Poland
Prior art keywords: salt electrolysis; quartz; low temperature; molten salt; temperature molten
Prior art date: 2005-05-13

Application number

PL06755173T

Other languages

English (en)

Inventor

Wulf Nägel

Original Assignee

Naegel Wulf

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-05-13

Filing date

2006-05-12

Publication date

2011-04-29

2006-05-12 Application filed by Naegel Wulf filed Critical Naegel Wulf

2011-04-29 Publication of PL1880042T3 publication Critical patent/PL1880042T3/pl

Links

VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 3
238000005868 electrolysis reaction Methods 0.000 title abstract 2
150000003839 salts Chemical class 0.000 title abstract 2
239000010453 quartz Substances 0.000 title 1
XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 2
QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 abstract 2
229910052753 mercury Inorganic materials 0.000 abstract 2
229910052710 silicon Inorganic materials 0.000 abstract 2
239000010703 silicon Substances 0.000 abstract 2
238000010306 acid treatment Methods 0.000 abstract 1
150000001462 antimony Chemical class 0.000 abstract 1
229910052787 antimony Inorganic materials 0.000 abstract 1
WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
229910052681 coesite Inorganic materials 0.000 abstract 1
229910052906 cristobalite Inorganic materials 0.000 abstract 1
150000002500 ions Chemical class 0.000 abstract 1
238000004519 manufacturing process Methods 0.000 abstract 1
239000000463 material Substances 0.000 abstract 1
238000000926 separation method Methods 0.000 abstract 1
239000000377 silicon dioxide Substances 0.000 abstract 1
235000012239 silicon dioxide Nutrition 0.000 abstract 1
239000007858 starting material Substances 0.000 abstract 1
229910052682 stishovite Inorganic materials 0.000 abstract 1
229910052717 sulfur Inorganic materials 0.000 abstract 1
239000011593 sulfur Substances 0.000 abstract 1
229910052905 tridymite Inorganic materials 0.000 abstract 1
238000005406 washing Methods 0.000 abstract 1

Classifications

- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/33—Silicon
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/023—Preparation by reduction of silica or free silica-containing material
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/36—Alloys obtained by cathodic reduction of all their ions

Landscapes

Chemical & Material Sciences (AREA)
Organic Chemistry (AREA)
Engineering & Computer Science (AREA)
Chemical Kinetics & Catalysis (AREA)
Electrochemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Inorganic Chemistry (AREA)
Silicon Compounds (AREA)
Glass Compositions (AREA)
Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Electrolytic Production Of Metals (AREA)

PL06755173T 2005-05-13 2006-05-12 Niskotemperaturowa termoelektroliza kwarcu PL1880042T3 (pl)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
EP05104028		2005-05-13
EP06755173A EP1880042B1 (de)	2005-05-13	2006-05-12	Niedrig-temperatur-schmelzfluss-elektrolyse von quarz
PCT/EP2006/062262 WO2006120240A2 (de)	2005-05-13	2006-05-12	Niedrig-temperatur-schmelzfluss-elektrolyse von quartz

Publications (1)

Publication Number	Publication Date
PL1880042T3 true PL1880042T3 (pl)	2011-04-29

Family

ID=34939834

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PL06755173T PL1880042T3 (pl)	2005-05-13	2006-05-12	Niskotemperaturowa termoelektroliza kwarcu

Country Status (14)

Country	Link
US (1)	US20100000875A1 (pl)
EP (1)	EP1880042B1 (pl)
JP (1)	JP2008545880A (pl)
KR (1)	KR20080007589A (pl)
CN (1)	CN101175870B (pl)
AT (1)	ATE485404T1 (pl)
AU (1)	AU2006245664B2 (pl)
CA (1)	CA2607849A1 (pl)
DE (1)	DE502006008132D1 (pl)
ES (1)	ES2353815T3 (pl)
PL (1)	PL1880042T3 (pl)
RU (1)	RU2408533C2 (pl)
WO (1)	WO2006120240A2 (pl)
ZA (1)	ZA200709712B (pl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
CN101545111B (zh) *	2008-03-26	2011-01-26	比亚迪股份有限公司	一种单质硅的制备方法
US9562296B2 (en) *	2010-11-02	2017-02-07	I'msep Co., Ltd.	Production method for silicon nanoparticles
CN103261095A (zh) *	2010-12-20	2013-08-21	盈保发展有限公司	用于制造硅的方法和装置
WO2012083480A1 (en) *	2010-12-20	2012-06-28	Epro Development Limited	Method and apparatus for producing pure silicon
CN103408108B (zh) *	2013-07-26	2014-09-10	中国科学院生态环境研究中心	亚硫酸钠与电化学组合快速去除水中五价锑污染物的方法
KR101642026B1 (ko) *	2013-08-19	2016-07-22	한국원자력연구원	전기화학적 실리콘 막 제조방법
CN104593828A (zh) *	2014-12-18	2015-05-06	东北大学	一种低硼磷冶金级硅的制备方法
CN108026467A (zh) *	2015-08-14	2018-05-11	范德比尔特化学品有限责任公司	改善的抗氧化剂组合物和含有所述抗氧化剂组合物的润滑组合物

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US2892763A (en) *	1957-04-12	1959-06-30	American Potash & Chem Corp	Production of pure elemental silicon
CH426279A (fr) *	1965-06-15	1966-12-15	Fiduciaire Generale S A	Cellule électrolytique pour la fabrication de silicium
US4292145A (en) *	1980-05-14	1981-09-29	The Board Of Trustees Of Leland Stanford Junior University	Electrodeposition of molten silicon
US4298587A (en) *	1980-10-28	1981-11-03	Atlantic Richfield Company	Silicon purification
US4448651A (en) *	1982-06-10	1984-05-15	The United States Of America As Represented By The United States Department Of Energy	Process for producing silicon
SU1546515A1 (ru) *	1987-12-11	1990-02-28	Сумской Государственный Педагогический Институт Им.А.С.Макаренко	Расплав дл электролитического получени металлического кремни
NO942121L (no) *	1994-06-07	1995-12-08	Jan Stubergh	Fremstilling og anordning for fremstilling av silisium-"metall", silumin og aluminium-metall
NO20010962D0 (no) *	2001-02-26	2001-02-26	Norwegian Silicon Refinery As	FremgangsmÕte for fremstilling av silisium med høy renhet ved elektrolyse
NO20010963D0 (no) *	2001-02-26	2001-02-26	Norwegian Silicon Refinery As	FremgangsmÕte for fremstilling av silisium og/eller aluminium og silumin (aluminium-silisium-legering)
CN1261353C (zh) *	2002-12-25	2006-06-28	刘寄声	一种多晶硅和石英玻璃的联合制备法
RU2272785C1 (ru) *	2004-08-12	2006-03-27	Общество с Ограниченной Ответственностью "Гелиос"	Способ получения высокочистого порошка кремния из тетрафторида кремния с одновременным получением элементного фтора, способ отделения кремния от расплава солей, полученные вышеуказанным способом порошок кремния и элементный фтор и способ получения тетрафторида кремния

2006
- 2006-05-12 WO PCT/EP2006/062262 patent/WO2006120240A2/de not_active Ceased
- 2006-05-12 AT AT06755173T patent/ATE485404T1/de active
- 2006-05-12 CN CN200680016465XA patent/CN101175870B/zh not_active Expired - Fee Related
- 2006-05-12 DE DE502006008132T patent/DE502006008132D1/de not_active Expired - Lifetime
- 2006-05-12 JP JP2008510586A patent/JP2008545880A/ja not_active Abandoned
- 2006-05-12 KR KR1020077026290A patent/KR20080007589A/ko not_active Ceased
- 2006-05-12 CA CA002607849A patent/CA2607849A1/en not_active Abandoned
- 2006-05-12 PL PL06755173T patent/PL1880042T3/pl unknown
- 2006-05-12 RU RU2007146452/05A patent/RU2408533C2/ru not_active IP Right Cessation
- 2006-05-12 ES ES06755173T patent/ES2353815T3/es not_active Expired - Lifetime
- 2006-05-12 EP EP06755173A patent/EP1880042B1/de not_active Expired - Lifetime
- 2006-05-12 AU AU2006245664A patent/AU2006245664B2/en not_active Ceased
- 2006-05-13 US US11/920,211 patent/US20100000875A1/en not_active Abandoned
2007
- 2007-11-12 ZA ZA200709712A patent/ZA200709712B/xx unknown

Also Published As

Publication number	Publication date
EP1880042A2 (de)	2008-01-23
AU2006245664B2 (en)	2010-10-07
ES2353815T3 (es)	2011-03-07
AU2006245664A1 (en)	2006-11-16
ATE485404T1 (de)	2010-11-15
US20100000875A1 (en)	2010-01-07
RU2408533C2 (ru)	2011-01-10
CA2607849A1 (en)	2006-11-16
WO2006120240A2 (de)	2006-11-16
ZA200709712B (en)	2008-10-29
CN101175870A (zh)	2008-05-07
DE502006008132D1 (de)	2010-12-02
KR20080007589A (ko)	2008-01-22
EP1880042B1 (de)	2010-10-20
CN101175870B (zh)	2011-01-12
JP2008545880A (ja)	2008-12-18
WO2006120240A3 (de)	2007-05-18
RU2007146452A (ru)	2009-06-20

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