PL1883975T3 - Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne - Google Patents

Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne

Info

Publication number: PL1883975T3
Authority: PL; Poland
Prior art keywords: selenisation; sulphurisation; thermal annealing; electrolytically deposited; cigs layers
Prior art date: 2005-05-25

Application number

PL06755519T

Other languages

English (en)

Inventor

Stèphane TAUNIER

Daniel Lincot

Jean-François Guillemoles

Negar Naghavi

Denis Guimard

Original Assignee

Centre Nat Rech Scient

Electricite De France

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2005-05-25

Filing date

2006-05-19

Publication date

2013-05-31

2006-05-19 Application filed by Centre Nat Rech Scient, Electricite De France filed Critical Centre Nat Rech Scient

2013-05-31 Publication of PL1883975T3 publication Critical patent/PL1883975T3/pl

Links

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/128—Annealing
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/131—Recrystallisation; Crystallization of amorphous or microcrystalline semiconductors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

PL06755519T 2005-05-25 2006-05-19 Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne PL1883975T3 (pl)

Applications Claiming Priority (3)

Application Number	Priority Date	Filing Date	Title
FR0505277A FR2886460B1 (fr)	2005-05-25	2005-05-25	Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
PCT/FR2006/001149 WO2006125898A1 (fr)	2005-05-25	2006-05-19	Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
EP06755519A EP1883975B1 (fr)	2005-05-25	2006-05-19	Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique

Publications (1)

Publication Number	Publication Date
PL1883975T3 true PL1883975T3 (pl)	2013-05-31

Family

ID=35711841

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PL06755519T PL1883975T3 (pl)	2005-05-25	2006-05-19	Siarkowanie i selenizacja warstw CIGS elektrolitycznie osadzonych poprzez wyżarzanie termiczne

Country Status (12)

Country	Link
US (1)	US8741685B2 (pl)
EP (1)	EP1883975B1 (pl)
JP (1)	JP5253154B2 (pl)
AU (1)	AU2006251092B2 (pl)
CA (1)	CA2610332C (pl)
CY (1)	CY1113790T1 (pl)
DK (1)	DK1883975T3 (pl)
ES (1)	ES2401650T3 (pl)
FR (1)	FR2886460B1 (pl)
PL (1)	PL1883975T3 (pl)
PT (1)	PT1883975E (pl)
WO (1)	WO2006125898A1 (pl)

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FR2886460B1 (fr) *	2005-05-25	2007-08-24	Electricite De France	Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique
JP4384237B2 (ja) *	2008-05-19	2009-12-16	昭和シェル石油株式会社	Ｃｉｓ系薄膜太陽電池の製造方法
DE102008024230A1 (de) *	2008-05-19	2009-11-26	Avancis Gmbh & Co. Kg	Schichtsystem für Solarzellen
TWI373851B (en) *	2008-11-25	2012-10-01	Nexpower Technology Corp	Stacked-layered thin film solar cell and manufacturing method thereof
US20110023750A1 (en) *	2009-07-28	2011-02-03	Kuan-Che Wang	Ink composition for forming absorbers of thin film cells and producing method thereof
KR101130067B1 (ko) *	2009-09-04	2012-03-28	재단법인대구경북과학기술원	화합물 반도체 태양전지 및 광흡수층 제조방법
US7923628B2 (en) *	2009-09-09	2011-04-12	International Business Machines Corporation	Method of controlling the composition of a photovoltaic thin film
US20110108115A1 (en) *	2009-11-11	2011-05-12	International Business Machines Corporation	Forming a Photovoltaic Device
DE102009053532B4 (de) *	2009-11-18	2017-01-05	Centrotherm Photovoltaics Ag	Verfahren und Vorrichtung zur Herstellung einer Verbindungshalbleiterschicht
TW201124544A (en) *	2009-11-24	2011-07-16	Applied Quantum Technology Llc	Chalcogenide absorber layers for photovoltaic applications and methods of manufacturing the same
US8153469B2 (en) *	2009-12-07	2012-04-10	Solopower, Inc.	Reaction methods to form group IBIIIAVIA thin film solar cell absorbers
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US7998789B1 (en) *	2010-04-16	2011-08-16	Jenn Feng New Energy Co., Ltd.	Method and system for forming copper indium gallium sulfur selenide absorption layer and cadmium sulfide buffer layer under non-vacuum condition
FR2966282B1 (fr) *	2010-10-18	2013-02-15	Nexcis	Controle de la stoechiometrie de couches i-iii-vi pour des applications photovoltaiques a partir de conditions d'electrolyse perfectionnees.
JP5552042B2 (ja)	2010-12-27	2014-07-16	インターナショナル・ビジネス・マシーンズ・コーポレーション	プログラム解析の方法、システムおよびプログラム
KR20120080045A (ko) *	2011-01-06	2012-07-16	한국전자통신연구원	태양전지의 제조방법
US20120222730A1 (en) *	2011-03-01	2012-09-06	International Business Machines Corporation	Tandem solar cell with improved absorption material
KR101317834B1 (ko) *	2011-04-07	2013-10-15	전북대학교산학협력단	고체 확산법을 이용한 ｃｉｇ 박막의 셀렌화 및 황산화 방법
KR101223415B1 (ko) *	2011-04-11	2013-01-17	칼릭스전자화학(주)	전해도금을 이용한 ｃｉｇｓ 박막 제조방법 및 이에 의한 태양전지
JP5764016B2 (ja) *	2011-09-07	2015-08-12	日東電工株式会社	Ｃｉｇｓ膜の製法およびそれを用いるｃｉｇｓ太陽電池の製法
TWI456779B (zh) *	2011-12-28	2014-10-11	財團法人工業技術研究院	光吸收層之改質方法
US8728855B2 (en)	2012-09-28	2014-05-20	First Solar, Inc.	Method of processing a semiconductor assembly
US10546964B2 (en) *	2012-11-15	2020-01-28	Taiwan Semiconductor Manufacturing Co., Ltd.	Molybdenum selenide sublayers with controlled thickness in solar cells and methods for forming the same
US20140193941A1 (en) *	2013-01-10	2014-07-10	Samsung Sdi Co., Ltd.	Method for manufacturing solar cell
KR101467462B1 (ko) *	2013-05-03	2014-12-02	(주) 다쓰테크	박막 화합물 태양전지 제조 방법
FR3006109B1 (fr) *	2013-05-24	2016-09-16	Commissariat Energie Atomique	Procede de realisation de la jonction p-n d'une cellule photovoltaique en couches minces et procede d'obtention correspondant d'une cellule photovoltaique.
KR101542343B1 (ko) *	2013-09-27	2015-08-06	재단법인대구경북과학기술원	박막 태양전지 및 이의 제조방법
KR101582121B1 (ko) *	2014-04-03	2016-01-05	한국과학기술연구원	이종 적층형 cis계 광활성층 박막의 제조방법, 이로부터 제조된 cis계 광활성층 박막 및 상기 박막을 포함하는 박막 태양전지
KR101686478B1 (ko) *	2015-04-22	2016-12-28	한국과학기술연구원	태양전지용 CIGSSe 박막 및 이의 제조방법, 이를 이용한 태양전지
TWI617684B (zh) *	2016-10-07	2018-03-11	國家中山科學研究院	Integrated fast selenium vulcanization process equipment
CN110957393B (zh) *	2019-12-13	2022-07-19	深圳先进技术研究院	薄膜太阳能电池的光吸收层的制备方法
JP7457310B1 (ja)	2023-06-12	2024-03-28	株式会社Pxp	薄膜太陽電池及び薄膜太陽電池の製造方法

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US5730852A (en) *	1995-09-25	1998-03-24	Davis, Joseph & Negley	Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
JP3249407B2 (ja) *	1996-10-25	2002-01-21	昭和シェル石油株式会社	カルコパイライト系多元化合物半導体薄膜光吸収層からなる薄膜太陽電池
US6274805B1 (en) *	1997-05-07	2001-08-14	Asahi Kasei Kabushiki Kaisha	Solar cell and manufacturing method thereof
US6323417B1 (en) *	1998-09-29	2001-11-27	Lockheed Martin Corporation	Method of making I-III-VI semiconductor materials for use in photovoltaic cells
WO2001037324A1 (en) *	1999-11-16	2001-05-25	Midwest Research Institute	A NOVEL PROCESSING APPROACH TOWARDS THE FORMATION OF THIN-FILM Cu(In,Ga)Se¿2?
US7019208B2 (en) *	2001-11-20	2006-03-28	Energy Photovoltaics	Method of junction formation for CIGS photovoltaic devices
FR2839201B1 (fr) *	2002-04-29	2005-04-01	Electricite De France	Procede de fabrication de semi-conducteurs en couches minces a base de composes i-iii-vi2, pour applications photovoltaiques
FR2849532B1 (fr) *	2002-12-26	2005-08-19	Electricite De France	Procede de fabrication d'un compose i-iii-vi2 en couches minces, favorisant l'incorporation d'elements iii
FR2849450B1 (fr) *	2002-12-26	2005-03-11	Electricite De France	Procede de regeneration d'un bain d'electrolyse pour la fabrication d'un compose i-iii-vi2 en couches minces
FR2886460B1 (fr) *	2005-05-25	2007-08-24	Electricite De France	Sulfurisation et selenisation de couches de cigs electrodepose par recuit thermique

2005
- 2005-05-25 FR FR0505277A patent/FR2886460B1/fr not_active Expired - Lifetime
2006
- 2006-05-19 WO PCT/FR2006/001149 patent/WO2006125898A1/fr not_active Ceased
- 2006-05-19 JP JP2008512868A patent/JP5253154B2/ja not_active Expired - Fee Related
- 2006-05-19 AU AU2006251092A patent/AU2006251092B2/en not_active Ceased
- 2006-05-19 DK DK06755519.3T patent/DK1883975T3/da active
- 2006-05-19 ES ES06755519T patent/ES2401650T3/es not_active Expired - Lifetime
- 2006-05-19 PL PL06755519T patent/PL1883975T3/pl unknown
- 2006-05-19 CA CA2610332A patent/CA2610332C/fr not_active Expired - Fee Related
- 2006-05-19 PT PT67555193T patent/PT1883975E/pt unknown
- 2006-05-19 EP EP06755519A patent/EP1883975B1/fr not_active Expired - Lifetime
- 2006-05-19 US US11/915,576 patent/US8741685B2/en not_active Expired - Fee Related
2013
- 2013-03-12 CY CY20131100216T patent/CY1113790T1/el unknown

Also Published As

Publication number	Publication date
ES2401650T3 (es)	2013-04-23
AU2006251092B2 (en)	2011-03-10
FR2886460A1 (fr)	2006-12-01
PT1883975E (pt)	2013-03-11
FR2886460B1 (fr)	2007-08-24
EP1883975A1 (fr)	2008-02-06
US20090130796A1 (en)	2009-05-21
EP1883975B1 (fr)	2012-12-19
CY1113790T1 (el)	2016-07-27
AU2006251092A1 (en)	2006-11-30
CA2610332C (fr)	2016-01-26
JP5253154B2 (ja)	2013-07-31
JP2008543038A (ja)	2008-11-27
AU2006251092A8 (en)	2006-11-30
US8741685B2 (en)	2014-06-03
WO2006125898A1 (fr)	2006-11-30
CA2610332A1 (fr)	2006-11-30
DK1883975T3 (da)	2013-03-25

Publication	Publication Date	Title
AU2006251092A8 (en)	2006-11-30	Sulphurisation and selenisation of CIGS layers electrolytically deposited by thermal annealing
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