PL1926839T3 - Target napylający z warstwą wiążącą o zmiennej grubości pod materiałem targetu - Google Patents

Target napylający z warstwą wiążącą o zmiennej grubości pod materiałem targetu

Info

Publication number
PL1926839T3
PL1926839T3 PL06802694T PL06802694T PL1926839T3 PL 1926839 T3 PL1926839 T3 PL 1926839T3 PL 06802694 T PL06802694 T PL 06802694T PL 06802694 T PL06802694 T PL 06802694T PL 1926839 T3 PL1926839 T3 PL 1926839T3
Authority
PL
Poland
Prior art keywords
bonding layer
varying thickness
thickness under
target material
sputtering target
Prior art date
Application number
PL06802694T
Other languages
English (en)
Inventor
Raymond M Mayer
Yiwei Lu
Original Assignee
Guardian Industries
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guardian Industries filed Critical Guardian Industries
Publication of PL1926839T3 publication Critical patent/PL1926839T3/pl

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Coating By Spraying Or Casting (AREA)
PL06802694T 2005-09-20 2006-08-31 Target napylający z warstwą wiążącą o zmiennej grubości pod materiałem targetu PL1926839T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/229,840 US8123919B2 (en) 2005-09-20 2005-09-20 Sputtering target with bonding layer of varying thickness under target material
PCT/US2006/034008 WO2007035227A2 (en) 2005-09-20 2006-08-31 Sputtering target with bonding layer of varying thickness under target material
EP06802694.7A EP1926839B1 (en) 2005-09-20 2006-08-31 Sputtering target with bonding layer of varying thickness under target material

Publications (1)

Publication Number Publication Date
PL1926839T3 true PL1926839T3 (pl) 2014-10-31

Family

ID=37882958

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06802694T PL1926839T3 (pl) 2005-09-20 2006-08-31 Target napylający z warstwą wiążącą o zmiennej grubości pod materiałem targetu

Country Status (6)

Country Link
US (1) US8123919B2 (pl)
EP (1) EP1926839B1 (pl)
CA (1) CA2620721C (pl)
ES (1) ES2488410T3 (pl)
PL (1) PL1926839T3 (pl)
WO (1) WO2007035227A2 (pl)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070062804A1 (en) * 2005-09-20 2007-03-22 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20070074970A1 (en) * 2005-09-20 2007-04-05 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20070062803A1 (en) * 2005-09-20 2007-03-22 Cp Technologies, Inc. Device and method of manufacturing sputtering targets
US20080105542A1 (en) * 2006-11-08 2008-05-08 Purdy Clifford C System and method of manufacturing sputtering targets
US20100025229A1 (en) * 2008-07-30 2010-02-04 Guardian Industries Corp. Apparatus and method for sputtering target debris reduction
US20100044222A1 (en) * 2008-08-21 2010-02-25 Guardian Industries Corp., Sputtering target including magnetic field uniformity enhancing sputtering target backing tube
US8134069B2 (en) 2009-04-13 2012-03-13 Miasole Method and apparatus for controllable sodium delivery for thin film photovoltaic materials
US7785921B1 (en) * 2009-04-13 2010-08-31 Miasole Barrier for doped molybdenum targets
US20110067998A1 (en) * 2009-09-20 2011-03-24 Miasole Method of making an electrically conductive cadmium sulfide sputtering target for photovoltaic manufacturing
JP5730888B2 (ja) 2009-10-26 2015-06-10 ジェネラル・プラズマ・インコーポレーテッド ロータリーマグネトロンマグネットバー、およびこれを含む高いターゲット利用のための装置
WO2012012136A1 (en) * 2010-06-30 2012-01-26 First Solar, Inc Cadmium stannate sputter target
US10043921B1 (en) 2011-12-21 2018-08-07 Beijing Apollo Ding Rong Solar Technology Co., Ltd. Photovoltaic cell with high efficiency cigs absorber layer with low minority carrier lifetime and method of making thereof
CN110484886B (zh) * 2019-09-12 2021-09-17 南京达迈科技实业有限公司 一种含微量稀土元素的镍铼合金旋转管状靶材及制备方法
CN113151791A (zh) * 2021-03-15 2021-07-23 宁波赉晟新材料科技有限责任公司 一种电触头材料表面快速沉积银镀膜方法
CN115491646A (zh) * 2022-09-20 2022-12-20 中核四0四有限公司 一种管材内壁镀膜的溅射靶及其溅射结构、镀膜方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ATE13561T1 (de) * 1980-08-08 1985-06-15 Battelle Development Corp Zylindrische magnetron-zerstaeuberkathode.
US5354446A (en) * 1988-03-03 1994-10-11 Asahi Glass Company Ltd. Ceramic rotatable magnetron sputtering cathode target and process for its production
US5427665A (en) * 1990-07-11 1995-06-27 Leybold Aktiengesellschaft Process and apparatus for reactive coating of a substrate
EP0543931A4 (en) * 1990-08-10 1993-09-08 Viratec Thin Films, Inc. Shielding for arc suppression in rotating magnetron sputtering systems
BE1007067A3 (nl) 1992-07-15 1995-03-07 Emiel Vanderstraeten Besloten Sputterkathode en werkwijze voor het vervaardigen van deze kathode.
JPH07173622A (ja) 1993-12-17 1995-07-11 Kobe Steel Ltd Ｐｖｄ法用円筒状ターゲット
US5593082A (en) * 1994-11-15 1997-01-14 Tosoh Smd, Inc. Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby
US6193856B1 (en) * 1995-08-23 2001-02-27 Asahi Glass Company Ltd. Target and process for its production, and method for forming a film having a highly refractive index
US6774339B1 (en) * 1999-11-09 2004-08-10 Tosoh Smd, Inc. Hermetic sealing of target/backing plate assemblies using electron beam melted indium or tin
ATE306571T1 (de) * 1999-12-03 2005-10-15 Bekaert Sa Nv Sputtertarget und verfahren zur herstellung eines solchen targets
CA2418807A1 (en) * 2000-09-08 2003-02-05 Asahi Glass Company, Limited Cylindrical target and its production method
WO2002042518A1 (de) * 2000-11-27 2002-05-30 Unaxis Trading Ag Target mit dickenprofilierung für rf manetron
US20040115362A1 (en) * 2002-01-14 2004-06-17 Klause Hartig Photocatalytic sputtering targets and methods for the production and use thereof
US7014741B2 (en) * 2003-02-21 2006-03-21 Von Ardenne Anlagentechnik Gmbh Cylindrical magnetron with self cleaning target

Also Published As

Publication number Publication date
EP1926839A2 (en) 2008-06-04
EP1926839B1 (en) 2014-05-14
CA2620721C (en) 2011-04-05
EP1926839A4 (en) 2010-11-03
ES2488410T3 (es) 2014-08-27
WO2007035227A2 (en) 2007-03-29
CA2620721A1 (en) 2007-03-29
US8123919B2 (en) 2012-02-28
US20070062805A1 (en) 2007-03-22
WO2007035227A3 (en) 2009-05-07

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