PL1952536T3 - Układ połączeń i sposób do wysterowywania elementu układu elektronicznego sygnałem wyjściowym z mikroprocesora - Google Patents

Układ połączeń i sposób do wysterowywania elementu układu elektronicznego sygnałem wyjściowym z mikroprocesora

Info

Publication number
PL1952536T3
PL1952536T3 PL06830069T PL06830069T PL1952536T3 PL 1952536 T3 PL1952536 T3 PL 1952536T3 PL 06830069 T PL06830069 T PL 06830069T PL 06830069 T PL06830069 T PL 06830069T PL 1952536 T3 PL1952536 T3 PL 1952536T3
Authority
PL
Poland
Prior art keywords
microprocessor
driving
output signal
electronic component
circuit arrangement
Prior art date
Application number
PL06830069T
Other languages
English (en)
Inventor
Bernd Rudolph
Original Assignee
Osram Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Gmbh filed Critical Osram Gmbh
Publication of PL1952536T3 publication Critical patent/PL1952536T3/pl

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/567—Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/04—Modifications for accelerating switching
    • H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
    • H03K17/0412—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit
    • H03K17/04123—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
    • H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
    • H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • H03K17/6877—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors the control circuit comprising active elements different from those used in the output circuit
PL06830069T 2005-11-23 2006-11-21 Układ połączeń i sposób do wysterowywania elementu układu elektronicznego sygnałem wyjściowym z mikroprocesora PL1952536T3 (pl)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102005055832A DE102005055832A1 (de) 2005-11-23 2005-11-23 Schaltungsanordnung und Verfahren zum Ansteuern eines elektronischen Bauelements mit einem Ausgangssignal eines Mikroprozessors
EP06830069A EP1952536B1 (de) 2005-11-23 2006-11-21 Schaltungsanordnung und verfahren zum ansteuern eines elektronischen bauelements mit einem ausgangssignal eines mikroprozessors
PCT/EP2006/068722 WO2007060165A1 (de) 2005-11-23 2006-11-21 Schaltungsanordnung und verfahren zum ansteuern eines elektronischen bauelements mit einem ausgangssignal eines mikroprozessors

Publications (1)

Publication Number Publication Date
PL1952536T3 true PL1952536T3 (pl) 2013-07-31

Family

ID=37773034

Family Applications (1)

Application Number Title Priority Date Filing Date
PL06830069T PL1952536T3 (pl) 2005-11-23 2006-11-21 Układ połączeń i sposób do wysterowywania elementu układu elektronicznego sygnałem wyjściowym z mikroprocesora

Country Status (10)

Country Link
US (1) US20090251198A1 (pl)
EP (1) EP1952536B1 (pl)
JP (1) JP4705683B2 (pl)
KR (1) KR101389481B1 (pl)
CN (1) CN101346881B (pl)
CA (1) CA2630768A1 (pl)
DE (1) DE102005055832A1 (pl)
PL (1) PL1952536T3 (pl)
TW (1) TW200731665A (pl)
WO (1) WO2007060165A1 (pl)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102119150B (zh) 2008-08-01 2015-06-03 拜尔农科股份公司 杀真菌剂n-(2-苯氧基乙基)羧酰胺衍生物及其氮杂、硫杂和硅杂类似物
BRPI1011903A2 (pt) 2009-04-28 2017-07-11 Intel Corp Modos operacionais de múltiplos transportadores em protocolo de comunicações sem fio, método de inicializar uma estação móvel a fim de preparar operação de múltiplos transportadores na mesma, e método de gerenciamento de transportadores na mesma
EP2665187B1 (en) * 2012-05-14 2016-07-20 Ampleon Netherlands B.V. Electronic device comprising RF-LDMOS transistor having improved ruggedness
ES2469315B1 (es) * 2012-12-14 2015-04-06 Bsh Electrodomésticos España, S.A. Componente de conexión, en particular, componente de conexión de aparato doméstico
US9933842B2 (en) 2016-04-15 2018-04-03 Emerson Climate Technologies, Inc. Microcontroller architecture for power factor correction converter
US10284132B2 (en) * 2016-04-15 2019-05-07 Emerson Climate Technologies, Inc. Driver for high-frequency switching voltage converters
US10763740B2 (en) 2016-04-15 2020-09-01 Emerson Climate Technologies, Inc. Switch off time control systems and methods
US10312798B2 (en) 2016-04-15 2019-06-04 Emerson Electric Co. Power factor correction circuits and methods including partial power factor correction operation for boost and buck power converters
DE102022211425A1 (de) * 2022-10-27 2024-05-02 Inventronics Gmbh Schaltungsanordnung zum Ansteuern einer Last

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4432016A (en) * 1981-11-20 1984-02-14 Rca Corporation Translating circuit for television receiver on-screen graphics display signals
US4471245A (en) * 1982-06-21 1984-09-11 Eaton Corporation FET Gating circuit with fast turn-on capacitor
FR2632070B1 (fr) * 1988-05-26 1990-11-23 Bendix Electronics Sa Circuit de commande de l'alimentation d'une charge electrique, a dispositif de detection d'un court-circuit de la charge
GB2238437A (en) * 1989-11-22 1991-05-29 Plessey Co Plc Transistor driver circuits
JPH03187260A (ja) * 1989-12-15 1991-08-15 Nippondenso Co Ltd Ｆｅｔ駆動回路
US5546043A (en) * 1992-05-07 1996-08-13 Siemens Nixdorf Informationssysteme Aktiengesellschaft Circuit arrangement for driving an MOS field-effect transistor
JP3043250B2 (ja) * 1993-12-27 2000-05-22 ヒュンダイ エレクトロニクス アメリカ ゲートアレイ用アナログ出力駆動回路
US5510950A (en) * 1994-10-05 1996-04-23 Ford Motor Company Method and circuit for controlling and monitoring a load
JP3459492B2 (ja) * 1995-04-24 2003-10-20 日本インター株式会社 電力増幅器
US5828261A (en) * 1996-11-13 1998-10-27 Caterpillar Inc. Gate drive circuit that controls a power transistor in three states
JP3755066B2 (ja) * 2002-11-06 2006-03-15 大和冷機工業株式会社 スイッチング回路及びその回路を用いたｄｃブラシレスモータの駆動回路
US7132877B2 (en) * 2004-10-12 2006-11-07 Summer Steven E Radiation tolerant solid-state relay
JP4093423B2 (ja) * 2004-12-14 2008-06-04 日本インター株式会社 ゲートドライブ回路
JP2006319711A (ja) * 2005-05-13 2006-11-24 Kyosan Electric Mfg Co Ltd ゲートドライブ回路

Also Published As

Publication number Publication date
TW200731665A (en) 2007-08-16
KR20080077217A (ko) 2008-08-21
CN101346881B (zh) 2011-12-07
JP2009516493A (ja) 2009-04-16
WO2007060165A1 (de) 2007-05-31
US20090251198A1 (en) 2009-10-08
DE102005055832A1 (de) 2007-05-24
CN101346881A (zh) 2009-01-14
CA2630768A1 (en) 2007-05-31
JP4705683B2 (ja) 2011-06-22
EP1952536A1 (de) 2008-08-06
KR101389481B1 (ko) 2014-04-28
EP1952536B1 (de) 2013-02-13

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