PL199294A1 - Sposob prowadzenia procesu epitaksji krzemu - Google Patents

Sposob prowadzenia procesu epitaksji krzemu

Info

Publication number: PL199294A1
Authority: PL; Poland
Prior art keywords: epitaxation; silicon; manner; silicon epitaxation; epitaxation process
Prior art date: 1977-07-01

Application number

PL19929477A

Other languages

English (en)

Other versions

PL116691B1 (en

Inventor

Jacek Korec

Jerzy Borkowicz

Original Assignee

Osrodek Naukowo Prod Materialo

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1977-07-01

Filing date

1977-07-01

Publication date

1979-07-16

1977-07-01 Application filed by Osrodek Naukowo Prod Materialo filed Critical Osrodek Naukowo Prod Materialo

1977-07-01 Priority to PL19929477A priority Critical patent/PL116691B1/pl

1979-07-16 Publication of PL199294A1 publication Critical patent/PL199294A1/pl

1981-06-30 Publication of PL116691B1 publication Critical patent/PL116691B1/pl

Links

XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title 1
229910052710 silicon Inorganic materials 0.000 title 1
239000010703 silicon Substances 0.000 title 1

PL19929477A 1977-07-01 1977-07-01 Method for conducting process of silicon epitaxy from gas phase on,particularly on silicon substrate PL116691B1 (en)

Priority Applications (1)

Application Number	Priority Date	Filing Date	Title
PL19929477A PL116691B1 (en)	1977-07-01	1977-07-01	Method for conducting process of silicon epitaxy from gas phase on,particularly on silicon substrate

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
PL19929477A PL116691B1 (en)	1977-07-01	1977-07-01	Method for conducting process of silicon epitaxy from gas phase on,particularly on silicon substrate

Publications (2)

Publication Number	Publication Date
PL199294A1 true PL199294A1 (pl)	1979-07-16
PL116691B1 PL116691B1 (en)	1981-06-30

Family

ID=19983427

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
PL19929477A PL116691B1 (en)	1977-07-01	1977-07-01	Method for conducting process of silicon epitaxy from gas phase on,particularly on silicon substrate

Country Status (1)

Country	Link
PL (1)	PL116691B1 (pl)

1977
- 1977-07-01 PL PL19929477A patent/PL116691B1/pl unknown

Also Published As

Publication number	Publication date
PL116691B1 (en)	1981-06-30

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