PL2024992T3 - Sposób wygładzania podłoży III-N - Google Patents
Sposób wygładzania podłoży III-NInfo
- Publication number
- PL2024992T3 PL2024992T3 PL06762845T PL06762845T PL2024992T3 PL 2024992 T3 PL2024992 T3 PL 2024992T3 PL 06762845 T PL06762845 T PL 06762845T PL 06762845 T PL06762845 T PL 06762845T PL 2024992 T3 PL2024992 T3 PL 2024992T3
- Authority
- PL
- Poland
- Prior art keywords
- smoothing
- substrates
- iii
- smoothing iii
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P52/40—Chemomechanical polishing [CMP]
- H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
- H10P90/12—Preparing bulk and homogeneous wafers
- H10P90/129—Preparing bulk and homogeneous wafers by polishing
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2006/007413 WO2008011897A1 (de) | 2006-07-26 | 2006-07-26 | Verfahren zum glätten von iii-n-substraten |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| PL2024992T3 true PL2024992T3 (pl) | 2017-09-29 |
Family
ID=37650008
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL16201978T PL3157045T3 (pl) | 2006-07-26 | 2006-07-26 | Wygładzone powierzchnie III-N |
| PL06762845T PL2024992T3 (pl) | 2006-07-26 | 2006-07-26 | Sposób wygładzania podłoży III-N |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PL16201978T PL3157045T3 (pl) | 2006-07-26 | 2006-07-26 | Wygładzone powierzchnie III-N |
Country Status (6)
| Country | Link |
|---|---|
| EP (2) | EP2024992B1 (pl) |
| JP (1) | JP5433414B2 (pl) |
| KR (2) | KR101363316B1 (pl) |
| CN (1) | CN101484981B (pl) |
| PL (2) | PL3157045T3 (pl) |
| WO (1) | WO2008011897A1 (pl) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5988480B2 (ja) * | 2012-06-05 | 2016-09-07 | 株式会社フジクラ | 研磨方法 |
| US9312129B2 (en) | 2012-09-05 | 2016-04-12 | Saint-Gobain Cristaux Et Detecteurs | Group III-V substrate material with particular crystallographic features and methods of making |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| PL184902B1 (pl) | 1997-04-04 | 2003-01-31 | Centrum Badan Wysokocisnieniowych Pan | Sposób usuwania nierówności i obszarów silnie zdefektowanych z powierzchni kryształów i warstw epitaksjalnych GaN i Ga AL In N |
| JPH11135617A (ja) * | 1997-10-31 | 1999-05-21 | Nippon Steel Corp | 素子分離領域の形成方法 |
| KR100277968B1 (ko) | 1998-09-23 | 2001-03-02 | 구자홍 | 질화갈륨 기판 제조방법 |
| JP3525824B2 (ja) | 1999-09-17 | 2004-05-10 | 日立化成工業株式会社 | Cmp研磨液 |
| US6596079B1 (en) * | 2000-03-13 | 2003-07-22 | Advanced Technology Materials, Inc. | III-V nitride substrate boule and method of making and using the same |
| JP2002087414A (ja) | 2000-09-18 | 2002-03-27 | Mitsuru Shioda | テープクロスパッド |
| JP3840056B2 (ja) * | 2001-02-14 | 2006-11-01 | 株式会社ノリタケカンパニーリミテド | 研磨加工用スラリー |
| US6488767B1 (en) * | 2001-06-08 | 2002-12-03 | Advanced Technology Materials, Inc. | High surface quality GaN wafer and method of fabricating same |
| JP2003100373A (ja) | 2001-09-21 | 2003-04-04 | Sumitomo Wiring Syst Ltd | 端子金具 |
| JP2004027042A (ja) * | 2002-06-26 | 2004-01-29 | Yuka Sangyo Kk | 微粒子分散ゲル化体及びそれから得られた微粒子分散液 |
| JP4823466B2 (ja) * | 2002-12-18 | 2011-11-24 | 日本碍子株式会社 | エピタキシャル成長用基板および半導体素子 |
| JP4752214B2 (ja) * | 2004-08-20 | 2011-08-17 | 住友電気工業株式会社 | エピタキシャル層形成用AlN結晶の表面処理方法 |
| JP5065574B2 (ja) * | 2005-01-12 | 2012-11-07 | 住友電気工業株式会社 | GaN基板の研磨方法 |
-
2006
- 2006-07-26 PL PL16201978T patent/PL3157045T3/pl unknown
- 2006-07-26 CN CN2006800553450A patent/CN101484981B/zh active Active
- 2006-07-26 PL PL06762845T patent/PL2024992T3/pl unknown
- 2006-07-26 EP EP06762845.3A patent/EP2024992B1/de active Active
- 2006-07-26 KR KR1020097000705A patent/KR101363316B1/ko active Active
- 2006-07-26 EP EP16201978.0A patent/EP3157045B1/de active Active
- 2006-07-26 WO PCT/EP2006/007413 patent/WO2008011897A1/de not_active Ceased
- 2006-07-26 KR KR1020137001513A patent/KR101408742B1/ko active Active
- 2006-07-26 JP JP2009521111A patent/JP5433414B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP3157045A1 (de) | 2017-04-19 |
| CN101484981B (zh) | 2013-03-27 |
| KR20130022426A (ko) | 2013-03-06 |
| KR20090033359A (ko) | 2009-04-02 |
| KR101363316B1 (ko) | 2014-02-14 |
| CN101484981A (zh) | 2009-07-15 |
| JP2009545144A (ja) | 2009-12-17 |
| PL3157045T3 (pl) | 2021-12-20 |
| KR101408742B1 (ko) | 2014-06-18 |
| EP3157045B1 (de) | 2021-09-08 |
| EP2024992A1 (de) | 2009-02-18 |
| EP2024992B1 (de) | 2017-03-01 |
| JP5433414B2 (ja) | 2014-03-05 |
| WO2008011897A1 (de) | 2008-01-31 |
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