PL202674A1 - Sposob selektywnej dyfuzji domieszki - Google Patents

Sposob selektywnej dyfuzji domieszki

Info

Publication number
PL202674A1
PL202674A1 PL20267477A PL20267477A PL202674A1 PL 202674 A1 PL202674 A1 PL 202674A1 PL 20267477 A PL20267477 A PL 20267477A PL 20267477 A PL20267477 A PL 20267477A PL 202674 A1 PL202674 A1 PL 202674A1
Authority
PL
Poland
Prior art keywords
adam
selective diffusion
diffusion
selective
Prior art date
Application number
PL20267477A
Other languages
English (en)
Inventor
Wojciech Rosnowski
Samuel Ponczak
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of PL202674A1 publication Critical patent/PL202674A1/pl

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P76/00—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography
    • H10P76/40—Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography of masks comprising inorganic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/12—Diffusion of dopants within, into or out of semiconductor bodies or layers between a solid phase and a gaseous phase
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P32/00—Diffusion of dopants within, into or out of wafers, substrates or parts of devices
    • H10P32/10—Diffusion of dopants within, into or out of semiconductor bodies or layers
    • H10P32/17—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material
    • H10P32/171—Diffusion of dopants within, into or out of semiconductor bodies or layers characterised by the semiconductor material being group IV material
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/033—Diffusion of aluminum
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/122—Polycrystalline
PL20267477A 1976-12-09 1977-12-06 Sposob selektywnej dyfuzji domieszki PL202674A1 (pl)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/749,179 US4050967A (en) 1976-12-09 1976-12-09 Method of selective aluminum diffusion

Publications (1)

Publication Number Publication Date
PL202674A1 true PL202674A1 (pl) 1978-06-19

Family

ID=25012611

Family Applications (1)

Application Number Title Priority Date Filing Date
PL20267477A PL202674A1 (pl) 1976-12-09 1977-12-06 Sposob selektywnej dyfuzji domieszki

Country Status (8)

Country Link
US (1) US4050967A (pl)
JP (1) JPS5383576A (pl)
BE (1) BE861642A (pl)
DE (1) DE2753533A1 (pl)
FR (1) FR2373877A1 (pl)
IT (1) IT1087981B (pl)
PL (1) PL202674A1 (pl)
SE (1) SE7713183L (pl)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118367A (en) * 1977-03-25 1978-10-16 Hitachi Ltd Manufacture of semiconductor
US4148133A (en) * 1978-05-08 1979-04-10 Sperry Rand Corporation Polysilicon mask for etching thick insulator
US4199386A (en) * 1978-11-28 1980-04-22 Rca Corporation Method of diffusing aluminum into monocrystalline silicon
JPS5824007B2 (ja) * 1979-07-16 1983-05-18 株式会社日立製作所 半導体装置の製造方法
DE3267491D1 (en) * 1981-03-02 1986-01-02 Bbc Brown Boveri & Cie Process for doping semiconductor bodies for the production of semiconductor devices
US4804634A (en) * 1981-04-24 1989-02-14 National Semiconductor Corporation Integrated circuit lateral transistor structure
US4470190A (en) * 1982-11-29 1984-09-11 At&T Bell Laboratories Josephson device fabrication method
CN104934305B (zh) * 2014-03-18 2017-11-03 西安永电电气有限责任公司 高压晶闸管及设计工艺方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1544273A1 (de) * 1965-12-13 1969-09-04 Siemens Ag Verfahren zum Eindiffundieren von aus der Gasphase dargebotenem Dotierungsmaterial in einen Halbleitergrundkristall
DE1644028A1 (de) * 1967-06-01 1971-03-25 Telefunken Patent Verfahren zum Eindiffundieren von Stoerstellen in einen begrenzten Bereich eines Halbleiterkoerpers
DE1806980A1 (de) * 1967-11-15 1969-06-19 Fairchild Camera Instr Co Halbleiter-Bauelement
US3764413A (en) * 1970-11-25 1973-10-09 Nippon Electric Co Method of producing insulated gate field effect transistors
US3928095A (en) * 1972-11-08 1975-12-23 Suwa Seikosha Kk Semiconductor device and process for manufacturing same
US3909926A (en) * 1973-11-07 1975-10-07 Jearld L Hutson Method of fabricating a semiconductor diode having high voltage characteristics
FR2270677B1 (pl) * 1974-02-20 1978-12-01 Silec Semi Conducteurs
GB1501114A (en) * 1974-04-25 1978-02-15 Rca Corp Method of making a semiconductor device
FR2280974A1 (fr) * 1974-08-01 1976-02-27 Silec Semi Conducteurs Procede de fabrication de semi-conducteurs comprenant au moins une couche dopee a l'aluminium et nouveaux produits ainsi obtenus
US3997379A (en) * 1975-06-20 1976-12-14 Rca Corporation Diffusion of conductivity modifiers into a semiconductor body

Also Published As

Publication number Publication date
DE2753533A1 (de) 1978-06-15
IT1087981B (it) 1985-06-04
BE861642A (fr) 1978-03-31
FR2373877A1 (fr) 1978-07-07
JPS5383576A (en) 1978-07-24
SE7713183L (sv) 1978-06-10
US4050967A (en) 1977-09-27

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Legal Events

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RECP Rectifications of patent specification